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AU2000228229A1 - Method for operating a parallel arrangement of power semiconductor switches - Google Patents

Method for operating a parallel arrangement of power semiconductor switches

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Publication number
AU2000228229A1
AU2000228229A1AU2000228229AAU2822900AAU2000228229A1AU 2000228229 A1AU2000228229 A1AU 2000228229A1AU 2000228229 AAU2000228229 AAU 2000228229AAU 2822900 AAU2822900 AAU 2822900AAU 2000228229 A1AU2000228229 A1AU 2000228229A1
Authority
AU
Australia
Prior art keywords
sub
switches
pulses
switching
power semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2000228229A
Inventor
Heinz Ruedi
Jan Thalheim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Switzerland GmbH
Original Assignee
CT Concept Technologie AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CT Concept Technologie AGfiledCriticalCT Concept Technologie AG
Publication of AU2000228229A1publicationCriticalpatent/AU2000228229A1/en
Abandonedlegal-statusCriticalCurrent

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Abstract

The invention relates to a method for statically balancing the loading of power semiconductor switches (S<SUB>1</SUB>, S<SUB>2</SUB>, S<SUB>3</SUB>) in a parallel circuit ( 1 ). To achieve this in prior art, switching instants of individual switches (S<SUB>1</SUB>, S<SUB>2</SUB>, S<SUB>3</SUB>) are adapted in the case of GTOs and current amplitudes of individual switches are adapted in the case of IGBTs. According to the invention, a primary pattern ( 4 ) of frame-switching pulses is predetermined for a total current (i) through the parallel circuit ( 1 ) and a secondary pattern ( 51, 52, 53 ) comprising more or fewer pulses than the primary pattern ( 4 ) is generated for at least one switch (S<SUB>1</SUB>, S<SUB>2</SUB>, S<SUB>3</SUB>). In contrast in conventional methods, the asynchronicity of the pulses enables a rapid redistribution of the loading between the parallel switches (S<SUB>1</SUB>, S<SUB>2</SUB>, S<SUB>3</SUB>), thus reducing or obviating the need for inductive suppressor circuits for limiting the current. The method is compatible with methods for the dynamic synchronization of transient switching and is suitable for "latching" and amplitude-controlled power semiconductor switches (S<SUB>1</SUB>, S<SUB>2</SUB>, S<SUB>3</SUB>). The examples relate to the addition or omission of subordinate switching pulses during long or short frame-switching pulses and to an active control ( 6 ) of the number of subordinate switching pulses, depending on the loading of the switches (S<SUB>1</SUB>, S<SUB>2</SUB>, S<SUB>3</SUB>).
AU2000228229A2000-03-152000-03-15Method for operating a parallel arrangement of power semiconductor switchesAbandonedAU2000228229A1 (en)

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
PCT/IB2000/000277WO2001069784A1 (en)2000-03-152000-03-15Method for operating a parallel arrangement of power semiconductor switches

Publications (1)

Publication NumberPublication Date
AU2000228229A1true AU2000228229A1 (en)2001-09-24

Family

ID=11003894

Family Applications (1)

Application NumberTitlePriority DateFiling Date
AU2000228229AAbandonedAU2000228229A1 (en)2000-03-152000-03-15Method for operating a parallel arrangement of power semiconductor switches

Country Status (7)

CountryLink
US (1)US7253540B1 (en)
EP (1)EP1266454B1 (en)
AT (1)ATE252788T1 (en)
AU (1)AU2000228229A1 (en)
DE (1)DE50004204D1 (en)
ES (1)ES2208279T3 (en)
WO (1)WO2001069784A1 (en)

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DE102019119975B3 (en)2019-07-242021-01-21Infineon Technologies Ag INTELLIGENT ELECTRONIC SWITCH
DE102019119973B3 (en)2019-07-242021-01-21Infineon Technologies Ag INTELLIGENT ELECTRONIC SWITCH
DE102019121685B4 (en)2019-08-122021-03-04Infineon Technologies Ag SMART ELECTRONIC SWITCH
DE102019121726A1 (en)*2019-08-132021-02-18Infineon Technologies Ag INTELLIGENT SEMI-CONDUCTOR SWITCH
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DE102019121795B4 (en)2019-08-132022-01-20Infineon Technologies Ag INTELLIGENT ELECTRONIC SWITCH
DE102020203994A1 (en)2020-03-272021-09-30Siemens Aktiengesellschaft Method for controlling switching elements of a modular multilevel converter
DE102020122571B4 (en)2020-08-282023-03-30Infineon Technologies Ag INTELLIGENT ELECTRONIC SWITCH
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US11378614B2 (en)2020-09-012022-07-05Infineon Technologies AgTemperature detection of power switch using modulation of driver output impedance
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Also Published As

Publication numberPublication date
US7253540B1 (en)2007-08-07
EP1266454B1 (en)2003-10-22
ATE252788T1 (en)2003-11-15
DE50004204D1 (en)2003-11-27
EP1266454A1 (en)2002-12-18
ES2208279T3 (en)2004-06-16
WO2001069784A1 (en)2001-09-20

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