(electronics,semiconductors) A type of metal–oxide–semiconductor field-effect transistor (MOSFET) that utilizes an p-type channel, conducting when a voltage voltage below a threshold is applied to the gate relative to the source. It is commonly used in complementary metal–oxide–semiconductor (CMOS) technology alongside nMOSFETs.
1990 March, Katsushi Asahina, Shuji Murakami, Katsuki Ichinose, Fuyumi Minami, Yasuhiro Funakoshi, “A 256-K 13-Nanosecond CMOS SRAM”, inElectronics & Communications in Japan, Part 2: Electronics, volume73, number 3, pages44-45:
As shown in Fig. 2, the source-drain breakdown characteristics of PMOSFETS exhibit an increase in the drain current under the same drain voltage as the gate length increases.
2025 April, A. Tahiat, B. Cretu, A. Veloso, E. Simoen, “Investigation of DC and low frequency noise parameters of junctionless GAA Si VNW pMOSFETs in the temperature range from 80 K to 340 K”, inSolid-State Electronics[1], volume225, page 1:
In this article, the performance of vertical nanowire Gate All Around (GAA) junction-less pMOSFETs on SOI having an asymmetric architecture was investigated experimentally based on an in-depth study of their electrical characteristics.
