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Tunnel injection is afield electron emission effect; specifically a quantum process calledFowler–Nordheim tunneling, wherebycharge carriers are injected to an electric conductor through a thin layer of an electric insulator.[1]
It is used to program NANDflash memory. The process used for erasing is calledtunnel release. This injection is achieved by creating a large voltage difference between the gate and the body of the MOSFET. When VGB >> 0, electrons are injected into the floating gate. When VGB << 0, electrons are forced out of the floating gate.
An alternative to tunnel injection is thespin injection.
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