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Trimethylindium

From Wikipedia, the free encyclopedia
Trimethylindium
Stereo, skeletal formula of trimethylindium with all implicit hydrogens shown
Stereo, skeletal formula of trimethylindium with all implicit hydrogens shown
Ball and stick model of trimethylindium
Ball and stick model of trimethylindium
Names
Preferred IUPAC name
Trimethylindium
Systematic IUPAC name
Trimethylindigane[1]
Other names
Trimethylindane, indium trimethyl
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard100.020.183Edit this at Wikidata
EC Number
  • 222-200-9
UNII
  • InChI=1S/3CH3.In/h3*1H3; checkY
    Key: IBEFSUTVZWZJEL-UHFFFAOYSA-N checkY
  • InChI=1/3CH3.In/h3*1H3;/rC3H9In/c1-4(2)3/h1-3H3
    Key: IBEFSUTVZWZJEL-SGQDGSKVAB
  • C[In](C)C
Properties
InC
3
H
9
Molar mass159.922 g mol−1
AppearanceWhite, opaque crystals
Density1.568 g cm−3 (at 20 °C)
Melting point88 °C (190 °F; 361 K)
Boiling point134 °C (273 °F; 407 K) (decomposes above 101 °C (214 °F; 374 K))
Reacts
Thermochemistry
150.5-169.7 kJ mol−1
Hazards
Occupational safety and health (OHS/OSH):
Main hazards
Pyrophoric
GHS labelling:
GHS02: FlammableGHS05: Corrosive
Danger
H250,H260,H261,H314
P210,P222,P223,P231+P232,P260,P264,P280,P301+P330+P331,P302+P334,P303+P361+P353,P304+P340,P305+P351+P338,P310,P321,P335+P334,P363,P370+P378,P402+P404,P405,P422,P501
Related compounds
Related compounds
Except where otherwise noted, data are given for materials in theirstandard state (at 25 °C [77 °F], 100 kPa).
checkY verify (what is checkY☒N ?)
Chemical compound

Trimethylindium, often abbreviated toTMI orTMIn, is the organoindium compound with the formula In(CH3)3. It is a colorless,pyrophoric solid.[2] Unliketrimethylaluminium, but akin totrimethylgallium, TMI is monomeric.[3]

Preparation

[edit]

TMI is prepared by the reaction ofindium trichloride withmethyl lithium.[2][4]

InCl3 + 3 LiMe → Me3In.OEt2 + 3 LiCl

Properties

[edit]

Compared totrimethylaluminium andtrimethylgallium, InMe3 is a weakerLewis acid. It forms adducts with secondaryamines andphosphines.[5] A complex with the heterocyclictriazine ligand (PriNCH2)3 forms a complex with 6-coordinate In, where the C-In-C angles are 114°-117° with three long bonds to the tridentate ligand with N-In-N angles of 48.6° and long In-N bonds of 278 pm.[6]

Structure

[edit]

In the gaseous state InMe3 is monomeric, with a trigonal planar structure, and inbenzene solution it is tetrameric.[5] In the solid state there are two polymorphs, a tetragonal phase which is obtained, for example, by sublimation and a lower density rhombohedral phase discovered in 2005,[7] when InMe3 re-crystallised fromhexane solution.

In the tetragonal form InMe3 is tetrameric as in benzene solution and there is bridging between tetramers to give an infinite network. Each indium atom is five coordinate, in a distortedtrigonal planar configuration, the three shortest bonds (ca. 216 pm) are those in the equatorial plane, with longer axial bonds, 308 pm for the In-C bonds joining the InMe3 units to form the tetramers and 356 pm for the In-C linking the tetramers into an infinite network.[8] The solid state structures ofGaMe3 andTlMe3 are similar.[8] The association in the solid state accounts for the high melting point of 89°–89.8 °C compared totriethylindium which melts at −32 °C.[5]

The rhombohedral form of InMe3 consists of cyclic hexamers with 12 membered (InC)6 rings in an extendedchair conformation. The hexamers are interlinked into an infinite network. Indium atoms are five coordinate the equatorial In-C distances average 216.7pm almost identical to the average for the tetragonal form, and the axial bonds are 302.8pm joining the InMe3 units into hexamers and 313.4 pm linking the hexamers to form the infinite network.[7]

Application to microelectronics

[edit]

Indium is a component of severalcompound semiconductors, including as InP, InAs,InN,InSb,GaInAs,InGaN,AlGaInP, AlInP, and AlInGaNP. These materials are prepared bymetalorganic vapour phase epitaxy (MOVPE) and TMI is the preferred source for theindium component. High purity in TMI (99.9999% pure or greater) is essential for many of these applications. For some materials, electron mobilities are observed as high as 287,000 cm²/Vs at 77 K and 5400 cm²/Vs at 300 K, and background carrier concentration as low as 6×1013 cm−3.[9][10]

Vapor pressure equation

[edit]

Thevapor pressure equation log P (Torr) = 10.98–3204/T (K) describes TMI within a wide range ofMOVPE growth conditions.[11]

Safety

[edit]

TMI ispyrophoric.[12]

References

[edit]
  1. ^"Trimethylindium - PubChem Public Chemical Database".The PubChem Project. USA: National Center for Biotechnology Information. 27 March 2005. Descriptors Computed from Structure. Retrieved21 September 2011.
  2. ^abBradley, D. C.; Chudzynska, H. C.; Harding, I. S. (1997). "Trimethylindium and Trimethylgallium".Inorganic Syntheses. Vol. 31. pp. 67–74.doi:10.1002/9780470132623.ch8.ISBN 978-0-471-15288-0.
  3. ^Greenwood, Norman N.; Earnshaw, Alan (1997).Chemistry of the Elements (2nd ed.).Butterworth-Heinemann. p. 262.doi:10.1016/C2009-0-30414-6.ISBN 978-0-08-037941-8.
  4. ^Main Group compounds in Inorganic Syntheses, vol 31, Schultz, Neumayer, Marks; Ed., Alan H. Cowley, John Wiley & Sons, Inc., 1997,ISBN 0471152889
  5. ^abcCVD of compound semiconductors, Precursor Synthesis, Development and Applications, Anthony C. Jones, Paul O'Brien, John Wiley & Sons, 2008,ISBN 3527292942
  6. ^Greenwood, Norman N.; Earnshaw, Alan (1997).Chemistry of the Elements (2nd ed.).Butterworth-Heinemann. p. 263.doi:10.1016/C2009-0-30414-6.ISBN 978-0-08-037941-8.
  7. ^abLewiński, Janusz; Zachara, Janusz; Starowieyski, Kazimierz B.; Justyniak, Iwona; Lipkowski, Janusz; Bury, Wojciech; Kruk, Przemysław; Woźniak, Robert (2005). "A Second Polymorphic Form of Trimethylindium: Topology of Supramolecular Architectures of Group 13 Trimethyls".Organometallics.24 (20):4832–4837.doi:10.1021/om050386s.ISSN 0276-7333.
  8. ^abInorganic Chemistry, (2d edition), Catherine E. Housecroft, Alan G. Sharpe, Pearson Education, 2005,ISBN 0130399132 ,ISBN 978-0130399137
  9. ^Shenai, Deo V.; Timmons, Michael L.; Dicarlo, Ronald L.; Lemnah, Gregory K.; Stennick, Robert S. (2003). "Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III–V compounds".Journal of Crystal Growth.248:91–98.Bibcode:2003JCrGr.248...91S.doi:10.1016/S0022-0248(02)01854-7.
  10. ^Shenai, Deodatta V.; Timmons, Michael L.; Dicarlo, Ronald L.; Marsman, Charles J. (2004). "Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine".Journal of Crystal Growth.272 (1–4):603–608.Bibcode:2004JCrGr.272..603S.doi:10.1016/j.jcrysgro.2004.09.006.
  11. ^Shenai-Khatkhate, Deodatta V.; Dicarlo, Ronald L.; Ware, Robert A. (2008). "Accurate vapor pressure equation for trimethylindium in OMVPE".Journal of Crystal Growth.310 (7–9): 2395.Bibcode:2008JCrGr.310.2395S.doi:10.1016/j.jcrysgro.2007.11.196.
  12. ^Chemistry of Materials (2000);doi:10.1021/cm990497f

External links

[edit]
Indium(I)
Organoindium(I) compounds
Indium(I,III)
Indium(III)
Organoindium(III) compounds
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