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Strained silicon directly on insulator

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Strained silicon directly on insulator (SSDOI) is a procedure developed byIBM which removes thesilicongermanium layer in thestrained silicon process leaving the strained silicon directly on the insulator. In contrast, strained silicon on SGOI provides a strained silicon layer on a relaxed silicon germanium layer on an insulator, as developed byMIT.[1]

References

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  1. ^Taraschi, Gianni; Pitera, Arthur J.; McGill, Lisa M.; Cheng, Zhi-Yuan; Lee, Minjoo L.; Langdo, Thomas A.; Fitzgerald, Eugene A. (2002)."Strained-Si-on-insulator (SSOI) and SiGe-on-insulator (SGOI): Fabrication obstacles and solutions".MRS Proceedings.745.doi:10.1557/PROC-745-N4.7. Retrieved2016-03-11.


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