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Thestatic induction transistor (SIT) is a type offield-effect transistor (FET) capable of high-speed and high-power operation, with low distortion and low noise.[1] It is a vertical structure device with short multichannel. The device was originally known as aVFET, with V being short for vertical.[2] Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a conventional FET. For the SIT, the breakdown voltage is not limited by the surface breakdown between gate and drain, allowing it to operate at a very high current and voltage. The SIT has a current-voltage characteristic similar to avacuum tube triode and it was therefore used in high-end audio products, including power amplifiers fromSony in the second half of the 1970s andYamaha from 1973-1980. The Sony n-channel SIT had the model number 2SK82 with its p-channel complement named 2SJ28.[2]
A SIT has:
The SIT was invented by Japanese engineersJun-ichi Nishizawa and Y. Watanabe in 1950.[3]
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