Thestatic induction thyristor (SIT,SITh) is athyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively or anode biased to hold off-state.[1] It has low noise, low distortion, high audio frequency power capability. The turn-on and turn-off times are very short, typically 0.25 microseconds.[2][3][4]
The first static induction thyristor was invented by Japanese engineerJun-ichi Nishizawa in 1975.[5] It was capable of conducting large currents with a lowforward bias and had a small turn-off time. It had a self controlledgate turn-off thyristor that was commercially available through Tokyo Electric Co. (nowToyo Engineering Corporation) in 1988. The initial device consisted of a p+nn+ diode and a buried p+ grid.[citation needed]
In 1999, an analytical model of the SITh was developed for thePSPICE circuit simulator.[6] In 2010, a newer version of SITh was developed by Zhang Caizhen, Wang Yongshun, Liu Chunjuan and Wang Zaixing, the new feature of which was its high forward blocking voltage.[7]
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