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Simon Sze
施敏
Born	(1936-03-21)21 March 1936 Nanjing, Jiangsu,China
Died	6 November 2023(2023-11-06) (aged 87)
Citizenship	Taiwan United States
Alma mater	National Taiwan University (BS) University of Washington (MS) Stanford University (PhD)
Known for	Floating-gate MOSFET
Awards	J. J. Ebers Award(1991) IEEE Celebrated Member(2017) Future Science Prize(2021)
Scientific career
Fields	Electronic engineering
Institutions	National Yang Ming Chiao Tung University
Thesis	Hot Electrons in Thin Gold Films (1963)
Doctoral advisor	John L. Moll

Simon Min Sze, orShi Min (Chinese:施敏;pinyin:Shī Mǐn; 21 March 1936 – 6 November 2023), was a Taiwanese-Americanelectrical engineer. He is best known for inventing thefloating-gate MOSFET with Korean electrical engineerDawon Kahng in 1967.

Simon Min Sze was born inNanjing,Jiangsu, and grew up inTaiwan. After graduating fromNational Taiwan University in 1957, he received a master's degree from theUniversity of Washington in 1960 and a doctorate fromStanford University in 1963.

Sze worked forBell Labs until 1990, after which he returned toTaiwan and joined the faculty ofNational Chiao Tung University.^[1] He is well known for his work insemiconductorphysics andtechnology, including his 1967 invention (withDawon Kahng) of thefloating-gate transistor,^[2] now widely used innon-volatile semiconductor memory devices. He wrote and edited many books, includingPhysics of Semiconductor Devices, one of the most-cited texts in its field.

Simon Sze died on 6 November 2023, at the age of 87.^[3]

• 1977:IEEE Fellow^[4]
• 1991:J. J. Ebers Award^[5]
• 1994: Academician ofAcademia Sinica, Taiwan^[6]
• 1995: Member ofNational Academy of Engineering, United States^[7]
• 1998: Foreign Member ofChinese Academy of Engineering, China
• 2010: Tenured Chair Professor,National Chiao Tung University, Taiwan
• 2014: Honorary Chair Professor,National Taiwan University of Science and Technology, Taiwan
• 2017:IEEE Celebrated Member
• 2021: The Future Science Prize, China^[8]
• 2022:Asian Scientist 100,Asian Scientist^[9]

• Physics of Semiconductor Devices, S. M. Sze. New York: Wiley, 1969,ISBN 0-471-84290-7; 2nd ed., 1981,ISBN 0-471-05661-8; 3rd ed., with Kwok K. Ng, 2006,ISBN 0-471-14323-5.
• Nonvolatile Memories: Materials, Devices and Applications 2-volume set, Tseung-Yuen Tseng and Simon M. Sze. Los Angeles: American Scientific Publishers, 2012;ISBN 1-58883-250-3.
• Semiconductor Devices: Physics and Technology, S. M. Sze. New York: Wiley, 1985; 2nd ed., 2001,ISBN 0-471-33372-7; 3rd ed., 2012,ISBN 978-0470-53794-7.
• VLSI Technology, ed. S. M. Sze. New York: McGraw-Hill, 1983,ISBN 0-07-062686-3; 2nd ed., 1988,ISBN 0-07-062735-5.
• Modern Semiconductor Device Physics, ed. S. M. Sze. New York: John Wiley & Sons, Inc., 1998,ISBN 0-471-15237-4.

• 1936 births
• 2023 deaths
• American electrical engineers
• American people of Taiwanese descent
• National Taiwan University alumni
• Scientists at Bell Labs
• American people of Chinese descent
• Members of the United States National Academy of Engineering
• 20th-century Chinese inventors
• Engineers from Jiangsu
• Taiwanese people from Jiangsu
• Scientists from Nanjing
• University of Washington alumni
• Stanford University alumni
• Academic staff of the National Chiao Tung University
• Foreign members of the Chinese Academy of Engineering
• Members of Academia Sinica
• Fellows of the IEEE

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