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List of semiconductor scale examples

From Wikipedia, the free encyclopedia

Semiconductor
device
fabrication
MOSFET scaling
(process nodes)
Future

Listed are manysemiconductorscale examples for variousmetal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor)semiconductor manufacturing process nodes.

Timeline of MOSFET demonstrations

[edit]
See also:MOSFET,Semiconductor device fabrication, andTransistor density


PMOS and NMOS

[edit]
MOSFET (PMOS andNMOS) demonstrations
DateChannel lengthOxide thickness[1]MOSFETlogicResearcher(s)OrganizationRef
June 196020,000 nm100 nmPMOSMohamed M. Atalla,Dawon KahngBell Telephone Laboratories[2][3]
NMOS
10,000 nm100nmPMOSMohamed M. Atalla,Dawon KahngBell Telephone Laboratories[4]
NMOS
May 19658,000 nm150 nmNMOSChih-Tang Sah, Otto Leistiko, A.S. GroveFairchild Semiconductor[5]
5,000 nm170 nmPMOS
December 19721,000 nm?PMOSRobert H. Dennard, Fritz H. Gaensslen, Hwa-Nien YuIBM T.J. Watson Research Center[6][7][8]
19737,500 nm?NMOSSohichi SuzukiNEC[9][10]
6,000 nm?PMOS?Toshiba[11][12]
October 19741,000 nm35 nmNMOSRobert H. Dennard, Fritz H. Gaensslen, Hwa-Nien YuIBM T.J. Watson Research Center[13]
500 nm
September 19751,500 nm20 nmNMOSRyoichi Hori, Hiroo Masuda, Osamu MinatoHitachi[7][14]
March 19763,000 nm?NMOS?Intel[15]
April 19791,000 nm25 nmNMOSWilliam R. Hunter, L. M. Ephrath, Alice CramerIBM T.J. Watson Research Center[16]
December 1984100 nm5 nmNMOSToshio Kobayashi, Seiji Horiguchi, K. KiuchiNippon Telegraph and Telephone[17]
December 1985150 nm2.5 nmNMOSToshio Kobayashi, Seiji Horiguchi, M. Miyake, M. OdaNippon Telegraph and Telephone[18]
75 nm?NMOSStephen Y. Chou, Henry I. Smith, Dimitri A. AntoniadisMIT[19]
January 198660 nm?NMOSStephen Y. Chou, Henry I. Smith, Dimitri A. AntoniadisMIT[20]
June 1987200 nm3.5 nmPMOSToshio Kobayashi, M. Miyake, K. DeguchiNippon Telegraph and Telephone[21]
December 199340 nm?NMOSMizuki Ono, Masanobu Saito, Takashi YoshitomiToshiba[22]
September 199616 nm?PMOSHisao Kawaura, Toshitsugu Sakamoto, Toshio BabaNEC[23]
June 199850 nm1.3 nmNMOSKhaled Z. Ahmed, Effiong E. Ibok, Miryeong SongAdvanced Micro Devices (AMD)[24][25]
December 20026 nm?PMOSBruce Doris, Omer Dokumaci,Meikei IeongIBM[26][27][28]
December 20033 nm?PMOSHitoshi Wakabayashi, Shigeharu YamagamiNEC[29][27]
?NMOS

CMOS (single-gate)

[edit]
ComplementaryMOSFET (CMOS) demonstrations (single-gate)
DateChannel lengthOxide thickness[1]Researcher(s)OrganizationRef
February 1963??Chih-Tang Sah,Frank WanlassFairchild Semiconductor[30][31]
196820,000nm100 nm?RCA Laboratories[32]
197010,000 nm100 nm?RCA Laboratories[32]
December 19762,000 nm?A. Aitken, R.G. Poulsen, A.T.P. MacArthur, J.J. WhiteMitel Semiconductor[33]
February 19783,000 nm?Toshiaki Masuhara, Osamu Minato, Toshio Sasaki, Yoshio SakaiHitachi Central Research Laboratory[34][35][36]
February 19831,200 nm25 nmR.J.C. Chwang, M. Choi, D. Creek, S. Stern, P.H. PelleyIntel[37][38]
900 nm15 nmTsuneo Mano, J. Yamada, Junichi Inoue, S. NakajimaNippon Telegraph and Telephone (NTT)[37][39]
December 19831,000 nm22.5 nmG.J. Hu, Yuan Taur,Robert H. Dennard, Chung-Yu TingIBM T.J. Watson Research Center[40]
February 1987800 nm17 nmT. Sumi, Tsuneo Taniguchi, Mikio Kishimoto, Hiroshige HiranoMatsushita[37][41]
700 nm12 nmTsuneo Mano, J. Yamada, Junichi Inoue, S. NakajimaNippon Telegraph and Telephone (NTT)[37][42]
September 1987500 nm12.5 nmHussein I. Hanafi,Robert H. Dennard, Yuan Taur, Nadim F. HaddadIBM T.J. Watson Research Center[43]
December 1987250 nm?Naoki Kasai, Nobuhiro Endo, Hiroshi KitajimaNEC[44]
February 1988400 nm10 nmM. Inoue, H. Kotani, T. Yamada, Hiroyuki YamauchiMatsushita[37][45]
December 1990100 nm?Ghavam G. Shahidi,Bijan Davari, Yuan Taur, James D. WarnockIBM T.J. Watson Research Center[46]
1993350 nm??Sony[47]
1996150 nm??Mitsubishi Electric
1998180 nm??TSMC[48]
December 20035 nm?Hitoshi Wakabayashi, Shigeharu Yamagami, Nobuyuki IkezawaNEC[29][49]

Multi-gate MOSFET (MuGFET)

[edit]
Multi-gateMOSFET (MuGFET) demonstrations
DateChannel lengthMuGFET typeResearcher(s)OrganizationRef
August 1984?DGMOSToshihiro Sekigawa, Yutaka HayashiElectrotechnical Laboratory (ETL)[50]
19872,000 nmDGMOSToshihiro SekigawaElectrotechnical Laboratory (ETL)[51]
December 1988250 nmDGMOSBijan Davari, Wen-Hsing Chang, Matthew R. Wordeman, C.S. OhIBM T.J. Watson Research Center[52][53]
180 nm
?GAAFETFujio Masuoka, Hiroshi Takato, Kazumasa Sunouchi, N. OkabeToshiba[54][55][56]
December 1989200 nmFinFETDigh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji TakedaHitachi Central Research Laboratory[57][58][59]
December 199817 nmFinFETDigh Hisamoto,Chenming Hu,Tsu-Jae King Liu,Jeffrey BokorUniversity of California (Berkeley)[60][61]
200115 nmFinFETChenming Hu, Yang-Kyu Choi, Nick Lindert,Tsu-Jae King LiuUniversity of California (Berkeley)[60][62]
December 200210 nmFinFETShibly Ahmed, Scott Bell, Cyrus Tabery, Jeffrey BokorUniversity of California (Berkeley)[60][63]
June 20063 nmGAAFETHyunjin Lee, Yang-kyu Choi, Lee-Eun Yu, Seong-Wan RyuKAIST[64][65]

Other types of MOSFET

[edit]
MOSFET demonstrations (other types)
DateChannel
length
(nm)		Oxide
thickness
(nm)[1]		MOSFET
type		Researcher(s)OrganizationRef
October 1962??TFTPaul K. WeimerRCA Laboratories[66][67]
1965??GaAsH. Becke, R. Hall, J. WhiteRCA Laboratories[68]
October 1966100,000100TFTT.P. Brody, H.E. KunigWestinghouse Electric[69][70]
August 1967??FGMOSDawon Kahng,Simon Min SzeBell Telephone Laboratories[71]
October 1967??MNOSH.A. Richard Wegener, A.J. Lincoln, H.C. PaoSperry Corporation[72]
July 1968??BiMOSHung-Chang Lin, Ramachandra R. IyerWestinghouse Electric[73][74]
October 1968??BiCMOSHung-Chang Lin, Ramachandra R. Iyer, C.T. HoWestinghouse Electric[75][74]
1969??VMOS?Hitachi[76][77]
September 1969??DMOSY. Tarui, Y. Hayashi, Toshihiro SekigawaElectrotechnical Laboratory (ETL)[78][79]
October 1970??ISFETPiet BergveldUniversity of Twente[80][81]
October 19701000?DMOSY. Tarui, Y. Hayashi, Toshihiro SekigawaElectrotechnical Laboratory (ETL)[82]
1977??VDMOSJohn Louis MollHP Labs[76]
??LDMOS?Hitachi[83]
July 1979??IGBTBantval Jayant Baliga, Margaret LazeriGeneral Electric[84]
December 19842000?BiCMOSH. Higuchi, Goro Kitsukawa, Takahide Ikeda, Y. NishioHitachi[85]
May 1985300??K. Deguchi, Kazuhiko Komatsu, M. Miyake, H. NamatsuNippon Telegraph and Telephone[86]
February 19851000?BiCMOSH. Momose, Hideki Shibata, S. Saitoh, Jun-ichi MiyamotoToshiba[87]
November 1986908.3?Han-Sheng Lee, L.C. PuzioGeneral Motors[88]
December 198660??Ghavam G. Shahidi, Dimitri A. Antoniadis, Henry I. SmithMIT[89][20]
May 1987?10?Bijan Davari, Chung-Yu Ting, Kie Y. Ahn, S. BasavaiahIBM T.J. Watson Research Center[90]
December 1987800?BiCMOSRobert H. Havemann, R. E. Eklund, Hiep V. TranTexas Instruments[91]
June 199730?EJ-MOSFETHisao Kawaura, Toshitsugu Sakamoto, Toshio BabaNEC[92]
199832???NEC[27]
19998???
April 20008?EJ-MOSFETHisao Kawaura, Toshitsugu Sakamoto, Toshio BabaNEC[93]

Commercial products using micro-scale MOSFETs

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Products featuring 20 μm manufacturing process

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Products featuring 10 μm manufacturing process

[edit]
Main article:10 μm process

Products featuring 8 μm manufacturing process

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Products featuring 6 μm manufacturing process

[edit]
Main article:6 μm process

Products featuring 3 μm manufacturing process

[edit]
Main article:3 μm process

Products featuring 1.5 μm manufacturing process

[edit]
Main article:1.5 μm process

Products featuring 1 μm manufacturing process

[edit]
Main article:1 μm process

Products featuring 800 nm manufacturing process

[edit]
Main article:800 nm process

Products featuring 600 nm manufacturing process

[edit]
Main article:600 nm process

Products featuring 350 nm manufacturing process

[edit]
Main article:350 nm process

Products featuring 250 nm manufacturing process

[edit]
Main article:250 nm process

Processors using 180 nm manufacturing technology

[edit]
Main article:180 nm process

Processors using 130 nm manufacturing technology

[edit]
Main article:130 nm process

Commercial products using nano-scale MOSFETs

[edit]
See also:Nanoelectronics andNanocircuitry

Chips using 90 nm manufacturing technology

[edit]
Main article:90 nm process

Processors using 65 nm manufacturing technology

[edit]
Main article:65 nm process

Processors using 45 nm technology

[edit]
Main article:45 nm process

Chips using 32 nm technology

[edit]
Main article:32 nm process
  • Toshiba produced commercial 32 GbNAND flash memory chips with the 32 nm process in 2009.[107]
  • Intel Core i3 and i5 processors, released in January 2010[108]
  • Intel 6-core processor, codenamedGulftown[109]
  • Intel i7-970, was released in late July 2010, priced at approximately US$900
  • AMD FX Series processors, codenamed Zambezi and based on AMD'sBulldozer architecture, were released in October 2011. The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design.
  • Ambarella Inc. announced the availability of the A7Lsystem-on-a-chip circuit for digital still cameras, providing1080p60 high-definition video capabilities in September 2011[110]

Chips using 24–28 nm technology

[edit]
  • SK Hynix announced that it could produce a 26 nm flash chip with 64 Gb capacity; Intel Corp. and Micron Technology had by then already developed the technology themselves. Announced in 2010.[111]
  • Toshiba announced that it was shipping 24 nm flash memory NAND devices on August 31, 2010.[112]
  • In 2016MCST's 28 nm processorElbrus-8S went for serial production.[113][114]

Chips using 22 nm technology

[edit]
Main article:22 nm process
  • Intel Core i7 and Intel Core i5 processors based on Intel'sIvy Bridge 22 nm technology for series 7 chip-sets went on sale worldwide on April 23, 2012.[115]

Chips using 20 nm technology

[edit]

Chips using 16 nm technology

[edit]

Chips using 14 nm technology

[edit]
Main article:14 nm process

Chips using 10 nm technology

[edit]
Main article:10 nm process

Chips using 7 nm technology

[edit]
Main article:7 nm process
  • TSMC began risk production of 256 Mbit SRAM memory chips using a 7 nm process in April 2017.[125]
  • Samsung and TSMC began mass production of 7 nm devices in 2018.[126]
  • Apple A12 andHuaweiKirin 980 mobile processors, both released in 2018, use 7 nm chips manufactured by TSMC.[127]
  • AMD began using TSMC 7 nm starting with the Vega 20 GPU in November 2018,[128] with Zen 2-based CPUs and APUs from July 2019,[129] and for both PlayStation 5[130] and Xbox Series X/S[131] consoles' APUs, released both in November 2020.

Chips using 5 nm technology

[edit]
Main article:5 nm process
  • Samsung began production of 5 nm chips (5LPE) in late 2018.[132]
  • TSMC began production of 5 nm chips (CLN5FF) in April 2019.[133]

Chips using 3 nm technology

[edit]
Main article:3 nm process

See also

[edit]

References

[edit]
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