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LDMOS

From Wikipedia, the free encyclopedia
Double-diffused MOSFET

LDMOS (laterally-diffused metal-oxide semiconductor)[1] is a planar double-diffusedMOSFET (metal–oxide–semiconductor field-effect transistor) used inamplifiers, includingmicrowave power amplifiers,RF power amplifiers andaudio power amplifiers. These transistors are often fabricated on p/p+ silicon epitaxial layers. The fabrication of LDMOS devices mostly involves various ion-implantation and subsequent annealing cycles.[1] As an example, the drift region of thispower MOSFET is fabricated using up to three ion implantation sequences in order to achieve the appropriate doping profile needed to withstand high electric fields.

Thesilicon-based RF LDMOS (radio-frequency LDMOS) is the most widely used RF power amplifier inmobile networks,[2][3][4] enabling the majority of the world'scellular voice anddata traffic.[5] LDMOS devices are widely used in RF power amplifiers for base-stations as the requirement is for high output power with a corresponding drain to sourcebreakdown voltage usually above 60volts.[6] Compared to other devices such asGaAs FETs they show a lower maximum power gain frequency.

Manufacturers of LDMOS devices and foundries offering LDMOS technologies include,Tower Semiconductor,TSMC,LFoundry,SAMSUNG,GLOBALFOUNDRIES,Vanguard International Semiconductor Corporation,STMicroelectronics,Infineon Technologies,RFMD,NXP Semiconductors (including formerFreescale Semiconductor),SMIC, MK Semiconductors, Polyfet andAmpleon.

Photo gallery

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Various RF LDMOS transistors
  • BLF2045 silicon die. RF LDMOS 26 V 180 mA 2 GHz 10 dB 30 W SOT467C. Designed for broadband operation (1800 to 2200 MHz).
    BLF2045 silicon die. RF LDMOS 26 V 180 mA 2 GHz 10 dB 30 W SOT467C. Designed for broadband operation (1800 to 2200 MHz).
  • BLF861A RF LDMOS transistor. RF LDMOS transistor 860 MHz 150 W.
    BLF861A RF LDMOS transistor. RF LDMOS transistor 860 MHz 150 W.
  • BLF861A silicon die. RF LDMOS transistor 860 MHz 150 W. Designed for UHF operation.
    BLF861A silicon die. RF LDMOS transistor 860 MHz 150 W. Designed for UHF operation.

Applications

[edit]
See also:List of MOSFET applications andPower MOSFET

Common applications of LDMOS technology include the following.

RF LDMOS

[edit]
See also:RF CMOS § Applications

Common applications of RF LDMOS technology include the following.

See also

[edit]

References

[edit]
  1. ^abA. Elhami Khorasani, IEEE Electron Dev. Lett., vol. 35, pp. 1079-1081, 2014
  2. ^abcdeBaliga, Bantval Jayant (2005).Silicon RF Power MOSFETS.World Scientific. pp. 1–2.ISBN 9789812561213.
  3. ^abcdefghAsif, Saad (2018).5G Mobile Communications: Concepts and Technologies.CRC Press. p. 134.ISBN 9780429881343.
  4. ^abcdefghijklTheeuwen, S. J. C. H.; Qureshi, J. H. (June 2012)."LDMOS Technology for RF Power Amplifiers"(PDF).IEEE Transactions on Microwave Theory and Techniques.60 (6):1755–1763.Bibcode:2012ITMTT..60.1755T.doi:10.1109/TMTT.2012.2193141.ISSN 1557-9670.S2CID 7695809.
  5. ^abcdefghijk"LDMOS Products and Solutions".NXP Semiconductors. Retrieved4 December 2019.
  6. ^van Rijs, F. (2008). "Status and trends of silicon LDMOS base station PA technologies to go beyond 2.5 GHz applications".Radio and Wireless Symposium, 2008 IEEE. Orlando, FL. pp. 69–72.doi:10.1109/RWS.2008.4463430.
  7. ^abDuncan, Ben (1996).High Performance Audio Power Amplifiers.Elsevier. pp. 177-8, 406.ISBN 9780080508047.
  8. ^"A 600W broadband HF amplifier using affordable LDMOS devices".QRPblog. 2019-10-27. Retrieved2022-09-28.
  9. ^abc"L-Band Radar".NXP Semiconductors. Retrieved9 December 2019.
  10. ^abcd"Avionics".NXP Semiconductors. Retrieved9 December 2019.
  11. ^abc"RF Aerospace and Defense".NXP Semiconductors. Retrieved7 December 2019.
  12. ^ab"Communications and Electronic Warfare".NXP Semiconductors. Retrieved9 December 2019.
  13. ^abcdefgh"Mobile & Wideband Comms".ST Microelectronics. Retrieved4 December 2019.
  14. ^abcdef"470–860 MHz – UHF Broadcast".NXP Semiconductors. Retrieved12 December 2019.
  15. ^abcdef"RF LDMOS Transistors".ST Microelectronics. Retrieved2 December 2019.
  16. ^ab"28/32V LDMOS: IDDE technology boost efficiency & robustness"(PDF).ST Microelectronics. Retrieved23 December 2019.
  17. ^abcdef"AN2048: Application note – PD54008L-E: 8 W – 7 V LDMOS in PowerFLAT packages for wireless meter reading applications"(PDF).ST Microelectronics. Retrieved23 December 2019.
  18. ^abcdefghijk"ISM & Broadcast".ST Microelectronics. Retrieved3 December 2019.
  19. ^abcd"700–1300 MHz – ISM".NXP Semiconductors. Retrieved12 December 2019.
  20. ^ab"2450 MHz – ISM".NXP Semiconductors. Retrieved12 December 2019.
  21. ^abcdefgh"1–600 MHz – Broadcast and ISM".NXP Semiconductors. Retrieved12 December 2019.
  22. ^ab"28/32 V LDMOS: New IDCH technology boosts RF power performance up to 4 GHz"(PDF).ST Microelectronics. Retrieved23 December 2019.
  23. ^ab"S-Band Radar".NXP Semiconductors. Retrieved9 December 2019.
  24. ^"RF Cellular Infrastructure".NXP Semiconductors. Retrieved7 December 2019.
  25. ^abcd"RF Mobile Radio".NXP Semiconductors. Retrieved9 December 2019.
  26. ^"UM0890: User manual – 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors"(PDF).ST Microelectronics. Retrieved23 December 2019.
  27. ^ab"915 MHz RF Cooking".NXP Semiconductors. Retrieved7 December 2019.
  28. ^abcTorres, Victor (21 June 2018)."Why LDMOS is the best technology for RF energy".Microwave Engineering Europe.Ampleon. Archived fromthe original on 10 December 2019. Retrieved10 December 2019.
  29. ^abc"RF Defrosting".NXP Semiconductors. Retrieved12 December 2019.
  30. ^"White Paper – 50V RF LDMOS: An ideal RF power technology for ISM, broadcast and commercial aerospace applications"(PDF).NXP Semiconductors.Freescale Semiconductor. September 2011. Retrieved4 December 2019.
  31. ^ab"RF Cellular Infrastructure".NXP Semiconductors. Retrieved12 December 2019.
  32. ^"450–1000 MHz".NXP Semiconductors. Retrieved12 December 2019.
  33. ^"3400–4100 MHz".NXP Semiconductors. Retrieved12 December 2019.
  34. ^"HF, VHF and UHF Radar".NXP Semiconductors. Retrieved7 December 2019.

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