 A ceramic C1103 variant | |
| Media type | 8 μmp-MOSDRAM |
|---|---|
| Capacity | 1kilobit |
| Standard | 18-pinDIP |
| Developed by | Honeywell |
| Manufactured by | Intel et al. |
| Usage | HP 9800 series,[1]PDP-11,[2]MAXC[3] and others |
| Released | October 1970 (1970-10)[4] |
| Discontinued | 1979[5] |
The1103 is adynamic random-access memory (DRAM)integrated circuit (IC) developed andfabricated byIntel. Introduced in October 1970, the 1103 was the first commercially available DRAM IC; and due to its small physical size and low price relative tomagnetic-core memory, it replaced the latter in many applications.[6][1] When it was introduced in 1970, initial production yields were poor, and it was not until the fifthstepping of the production masks that it became available in large quantities during 1971. Intel shipped the 250,000th 1103 RAM chip in June 1974.[7]
In 1969 William Regitz and his colleagues atHoneywell invented a three-transistor dynamicmemory cell and began to canvass the semiconductor industry for a producer. The recently foundedIntel Corporation responded and developed two very similar 1024-bit chips, the 1102 and 1103, under the lead ofJoel Karp, working closely with William Regitz.[8] Ultimately only the 1103 went into production.
Microsystems International became the firstsecond source for the 1103 in 1971.[9] LaterNational Semiconductor,Signetics, andSynertek manufactured the 1103 as well.
| tRWC | 580 ns | Random read or write cycle time (from one +ve Precharge edge to the next) |
| tPO | 300 ns | Access time: Precharge High to valid data out |
| tREF | 2 ms | Refresh time |
| VCC | 16 V | Supply voltage |
| p-MOS | 8 μm[10] | Production process (silicon gateMOSFET) |
| Capacity | 1024x1 | Capacity x bus width |
The most significant contributor to reliability has been main-memory error correction. During the first six months of operation, we replaced about 12 failing 1Kx1 MOS RAMs per month (out of a population of 18,432 chips): this has gradually declined to about three failures a month during the last three years. However, because of error correction, a negligible number of these failures has caused crashes.
The i1103 was manufactured on a 6-mask silicon-gate P-MOS process with 8 μm minimum features. The resulting product had a 2,400 μm2 memory cell size, a die size just under 10 mm2, and sold for around $21.
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