Indium gallium arsenide phosphide (GaxIn1−xAsyP1−y) is aquaternary compoundsemiconductor material, an alloy ofgallium arsenide,gallium phosphide,indium arsenide, orindium phosphide. This compound has applications in photonic devices, due to the ability to tailor itsband gap via changes in the alloy mole ratios,x andy.
Indium phosphide-basedphotonic integrated circuits, or PICs, commonly use alloys ofGaxIn1−xAsyP1−y to constructquantum wells,waveguides and other photonic structures, lattice matched to an InP substrate, enabling single-crystal epitaxial growth onto InP.
Many devices operating in thenear-infrared 1.55 μm wavelength window utilize this alloy, and are employed as optical components (such aslaser transmitters,photodetectors and modulators) inC-band communications systems[citation needed].
Fraunhofer Institute for Solar Energy Systems ISE reported atriple-junction solar cell utilizingGa0.93In0.07As0.87P0.13. The cell has very high efficiency of 35.9% (claimed to be a record).[1][2]
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