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Agate equivalent (GE) stands for a unit of measure which allows specifyingmanufacturing-technology-independent complexity ofdigital electronic circuits.For today'sCMOS technologies, the silicon area of a two-input drive-strength-oneNANDgate usually constitutes thetechnology-dependent unit area commonly referred to as gate equivalent.A specification in gate equivalents for a certain circuit reflects a complexity measure, from which a corresponding silicon area can be deduced for a dedicated manufacturing technology.
In digital circuit design, a dedicatedstandard cell library is employed for each manufacturing technology (e.g., CMOS). The standard cell library comprises many differentlogic gates, for example a NAND gate. For each logical type of logic gate, e.g., a two-input NAND, there usually exist different physical realizations in the standard cell library, for instance with different output drive strengths.
Basically, a two-inputdrive-strength-one NAND gate in CMOS technology consists of fourtransistors.