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Aluminium gallium indium phosphide

From Wikipedia, the free encyclopedia
Semiconductor material
Aluminium gallium indium phosphide
Identifiers
3D model (JSmol)
  • Al:Ga:In = 1:1:1: InChI=1S/Al.Ga.In.3P/q3*+3;3*-3
    Key: LWRKRICXHHSDPR-UHFFFAOYSA-N
  • Al:Ga:In = 1:1:1: [Al+3].[Ga+3].[In+3].[P-3].[P-3].[P-3]
Properties
AlGaInP
Structure
Cubic
Except where otherwise noted, data are given for materials in theirstandard state (at 25 °C [77 °F], 100 kPa).
Chemical compound

Aluminium gallium indium phosphide (AlGaInP, alsoAlInGaP,InGaAlP, etc.) is asemiconductor material that provides a platform for the development ofmulti-junction photovoltaics and optoelectronic devices. It has adirectbandgap ranging from ultraviolet to infrared photon energies.[1]

AlGaInP is used inheterostructures for high-brightness red, orange, green, and yellowlight-emitting diodes. It is also used to makediode lasers.

Preparation

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AlGaInP is typically grown byheteroepitaxy ongallium arsenide orgallium phosphide substrates in order to form aquantum well structure that can be fabricated into different devices.

Properties

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Optical properties
Refractive index3.49
Chromatic dispersion-1.68 μm−1
Absorption coefficient50536 cm−1

The direct bandgap of AlGaInP encompasses the energy range of visible light (1.7 eV - 3.1 eV). By selecting a specific composition of AlGaInP, the bandgap can be selected to correspond to the energy of a specific wavelength of visible light. For instance, this can be used to obtain LEDs that emit red, orange, or yellow light.[1]

Like most other III-V semiconductors and their alloys, AlGaInP possesses azincblende crystal structure.[2]

Applications

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AlGaInP is used as the active material in:

  • Light emitting diodes of high brightness
  • Diode lasers
  • Quantum well structures
  • Solar cells (potential). The use of aluminium gallium indium phosphide with high aluminium content, in a five junction structure, can lead to solar cells with maximum theoreticalefficiencies above 40%.[1]

AlGaInP is frequently used in LEDs for lighting systems, along withindium gallium nitride (InGaN).[citation needed]

Diode laser

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A diode laser consists of a semiconductor material in which a p-n junction forms the active medium and optical feedback is typically provided by reflections at the device facets. AlGaInP diode lasers emit visible and near-infrared light with wavelengths of 0.63-0.76 μm.[3] The primary applications of AlGaInP diode lasers are in optical disc readers, laser pointers, and gas sensors, as well as foroptical pumping, and machining.[1]

Safety and toxicity aspects

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The toxicology of AlGaInP has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium indium gallium phosphide sources (such astrimethylgallium,trimethylindium andphosphine) and industrial hygiene monitoring studies of standardMOVPE sources have been reported in a review.[4]


See also

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References

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  1. ^abcdRodrigo, SM; Cunha, A; Pozza, DH; Blaya, DS; Moraes, JF; Weber, JB; de Oliveira, MG (2009). "Analysis of the systemic effect of red and infrared laser therapy on wound repair".Photomed Laser Surg.27 (6):929–35.doi:10.1089/pho.2008.2306.hdl:10216/25679.PMID 19708798.
  2. ^"Krames, Michael, R., Oleg B. Shcekin, Regina Mueller-Mach, Gerd O. Mueller, Ling Zhou, Gerard Harbers, and George M Craford. "Status and Future of High-Power Light-Emitting." JOURNAL OF DISPLAY TECHNOLOGY Vol. 3.No. 2 (2007): 160.Department of Electrical Engineering. 20 July 2009. Web"(PDF). Archived fromthe original(PDF) on 2015-12-08. Retrieved2015-12-03.
  3. ^Chan, B. L.; Jutamulia, S. (2 December 2010). "Lasers in light skin interaction",Proc. SPIE 7851, Information Optics and Optical Data Storage, 78510O; doi: 10.1117/12.872732
  4. ^Shenai-Khatkhate, Deodatta V. (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors".Journal of Crystal Growth.272 (1–4):816–821.Bibcode:2004JCrGr.272..816S.doi:10.1016/j.jcrysgro.2004.09.007.
Notes
  • Griffin, I J (2000). "Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto-optical spectroscopy".Semiconductor Science and Technology.15 (11):1030–1034.Bibcode:2000SeScT..15.1030G.doi:10.1088/0268-1242/15/11/303.S2CID 250827812.
  • High Brightness Light Emitting Diodes:G. B. Stringfellow and M. George Craford, Semiconductors and Semimetals, vol. 48, pp. 97–226.
Al(I)
Organoaluminium(I) compounds
Al(II)
Al(III)
Alums
Organoaluminium(III) compounds
Gallium(−V)
Gallium(I)
Gallium(II)
Gallium(I,III)
Gallium(III)
Organogallium(III) compounds
Indium(I)
Organoindium(I) compounds
Indium(I,III)
Indium(III)
Organoindium(III) compounds
Phosphides
Other compounds
Binary phosphides
Ternary phosphides
Quaternary phosphides
Quinary phosphides
See also
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