Semiconductor device fabrication
MOSFET scaling (process nodes)
020 μm – 1968 010 μm – 1971 006 μm – 1974 003 μm – 1977  1.5 μm – 1981 001 μm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2025 001 nm ~ 2027
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
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The800 nm process (800nanometer process) is a level of semiconductor process technology that was reached in the 1987–1990 timeframe, by companies, such asIntel,ATI Technologies, andIBM.^[1]

The 800 nm process refers to the minimum size that could be reliably produced. The smallest transistors and other circuit elements on a chip made with this process were around 800 nanometers wide.

• 50-MHzi486DXCPU launched in 1991 was manufactured using this process.^[2]
• Both 25/50 and 33/66 MHz Intel486 DX2 CPU using this process.^[3]
• Early version of Intel486 SX2 using this process.^[4]
• Intel uses this ETOX-III (EPROM Tunnel Oxide) process technology for theseFlash Memory modules.^[5]
• The 3.3-volt 25 MHz version of Intel486 SL uses this three-layerCHMOS V process.^[6]
• microSPARC I launched in 1992
• First IntelP5Pentium CPUs at 60 MHz and 66 MHz launched in 1993 usingBiCMOS technology process.^[7]

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