Movatterモバイル変換

130 nm process

From Wikipedia, the free encyclopedia

Semiconductor manufacturing processes

This articleneeds additional citations forverification. Please helpimprove this article byadding citations to reliable sources. Unsourced material may be challenged and removed.
Find sources: "130 nm process" – news ·newspapers ·books ·scholar ·JSTOR(September 2015) (Learn how and when to remove this message)

Semiconductor device fabrication

MOSFET scaling (process nodes)
20 μm – 1968 10 μm – 1971 6 μm – 1974 3 μm – 1977 1.5 μm – 1981 1 μm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 90 nm – 2003 65 nm – 2005 45 nm – 2007 32 nm – 2009 28 nm – 2010 22 nm – 2012 14 nm – 2014 10 nm – 2016 7 nm – 2018 5 nm – 2020 3 nm – 2022
Future 2 nm ~ 2025 1 nm ~ 2027
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
v t e

The130 nanometer (130 nm) process is a level ofsemiconductor process technology that was reached in the 2000–2001 timeframe by such leading semiconductor companies asIntel,Texas Instruments,IBM, andTSMC.

The origin of the 130 nm value is historical, as it reflects a trend of 70% scaling every 2–3 years. The naming is formally determined by theInternational Technology Roadmap for Semiconductors (ITRS).

Some of the firstCPUs manufactured with this process includeIntel Tualatin family of Pentium III processors.