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Fujio Masuoka

Fujio Masuoka (舛岡 富士雄,Masuoka Fujio, born May 8, 1943) is a Japanese engineer, who has worked forToshiba andTohoku University, and is currently chief technical officer (CTO) of Unisantis Electronics. He is best known as the inventor offlash memory, including the development of both theNOR flash andNAND flash types in the 1980s.[1] He also invented the firstgate-all-around (GAA)MOSFET (GAAFET) transistor, an early non-planar3D transistor, in 1988.

Fujio Masuoka (舛岡 富士雄)
BornMay 8, 1943 (1943-05-08) (age 81)
NationalityJapanese
Alma materTohoku University
Known forFlash memory
NOR flash
NAND flash
GAAFET
AwardsIEEE Morris N. Liebmann Memorial Award
Scientific career
FieldsElectrical engineering
InstitutionsToshiba
Tohoku University
Unisantis
Doctoral advisorJun-ichi Nishizawa

Biography

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Masuoka attendedTohoku University inSendai,Japan, where he earned an undergraduate degree in engineering in 1966 and doctorate in 1971.[2]He joinedToshiba in 1971. There, he invented stacked-gate avalanche-injectionmetal–oxide–semiconductor (SAMOS) memory, a precursor toelectrically erasable programmable read-only memory (EEPROM) andflash memory.[3][4] In 1976, he developeddynamic random-access memory (DRAM) with a doublepoly-Si structure. In 1977 he moved to Toshiba Semiconductor Business Division, where he developed 1 Mb DRAM.[3]

Masuoka was excited mostly by the idea ofnon-volatile memory, memory that would last even when power was turned off. The EEPROM of the time took very long to erase. He developed the "floating gate" technology that could be erased much faster. He filed apatent in 1980 along with Hisakazu Iizuka.[5][3]His colleague Shoji Ariizumi suggested the word "flash" because the erasure process reminded him of the flash of a camera.[6]The results (with capacity of only 8192 bytes) were published in 1984, and became the basis forflash memory technology of much larger capacities.[7][8] Masuoka and colleagues presented the invention ofNOR flash in 1984,[9] and thenNAND flash at theIEEE 1987 International Electron Devices Meeting (IEDM) held in San Francisco.[10] Toshiba commercially launched NAND flash memory in 1987.[11][12] Toshiba gave Masuoka a few hundred dollar bonus for the invention, and later tried to demote him.[13] But it was the American companyIntel which made billions of dollars in sales on related technology.[13] Toshiba's press department told Forbes that it was Intel that invented flash memory.[13]

In 1988, a Toshiba research team led by Masuoka demonstrated the firstgate-all-around (GAA)MOSFET (GAAFET) transistor. It was an early non-planar3D transistor, and they called it a "surrounding gate transistor" (SGT).[14][15][16][17][18] He became a professor at Tohoku University in 1994.[13]Masuoka received the 1997IEEE Morris N. Liebmann Memorial Award of theInstitute of Electrical and Electronics Engineers.[19]In 2004, Masuoka became the chief technical officer of Unisantis Electronics aiming to develop athree-dimensional transistor, based on his earlier surrounding-gate transistor (SGT) invention from 1988.[17][2]In 2006, he settled a lawsuit with Toshiba for ¥87m (about US$758,000).[20]

He has a total of 270 registered patents and 71 additional pending patents.[3] He has been suggested as a potential candidate for theNobel Prize in Physics, along withRobert H. Dennard who invented single-transistor DRAM.[21]

Recognition

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References

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  1. ^Jeff Katz (September 21, 2012)."Oral History of Fujio Masuoka"(PDF).Computer History Museum. RetrievedMarch 20, 2017.
  2. ^ab"Company profile". Unisantis-Electronics (Japan) Ltd. Archived fromthe original on February 22, 2007. RetrievedMarch 20, 2017.
  3. ^abcd"Fujio Masuoka".IEEE Explore.IEEE. Retrieved17 July 2019.
  4. ^Masuoka, Fujio (31 August 1972)."Avalanche injection type mos memory".Google Patents.
  5. ^"Semiconductor memory device and method for manufacturing the same".US Patent 4531203 A. November 13, 1981. RetrievedMarch 20, 2017.
  6. ^Detlev Richter (2013).Flash Memories: Economic Principles of Performance, Cost and Reliability. Springer Series in Advanced Microelectronics. Vol. 40. Springer Science and Business Media. pp. 5–6.doi:10.1007/978-94-007-6082-0.ISBN 978-94-007-6081-3.
  7. ^F. Masuoka; M. Asano; H. Iwahashi; T. Komuro; S. Tanaka (December 9, 1984). "A new flash E2PROM cell using triple polysilicon technology".1984 International Electron Devices Meeting. IEEE. pp. 464–467.doi:10.1109/IEDM.1984.190752.S2CID 25967023.
  8. ^"A 256K Flash EEPROM using Triple Polysilicon Technology"(PDF).IEEE historic photo repository. RetrievedMarch 20, 2017.
  9. ^"Toshiba: Inventor of Flash Memory".Toshiba. Archived fromthe original on 20 June 2019. Retrieved20 June 2019.
  10. ^Masuoka, F.; Momodomi, M.; Iwata, Y.; Shirota, R. (1987). "New ultra high density EPROM and flash EEPROM with NAND structure cell".Electron Devices Meeting, 1987 International.IEDM 1987.IEEE.doi:10.1109/IEDM.1987.191485.
  11. ^"1987: Toshiba Launches NAND Flash".eWeek. April 11, 2012. Retrieved20 June 2019.
  12. ^"1971: Reusable semiconductor ROM introduced".Computer History Museum. Retrieved19 June 2019.
  13. ^abcdFulford, Benjamin (June 24, 2002)."Unsung hero".Forbes. RetrievedMarch 20, 2017.
  14. ^Masuoka, Fujio; Takato, H.; Sunouchi, K.; Okabe, N.; Nitayama, A.; Hieda, K.; Horiguchi, F. (December 1988). "High performance CMOS surrounding gate transistor (SGT) for ultra high density LSIs".Technical Digest., International Electron Devices Meeting. pp. 222–225.doi:10.1109/IEDM.1988.32796.S2CID 114148274.
  15. ^Brozek, Tomasz (2017).Micro- and Nanoelectronics: Emerging Device Challenges and Solutions.CRC Press. p. 117.ISBN 978-1-351-83134-5.
  16. ^Ishikawa, Fumitaro; Buyanova, Irina (2017).Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications.CRC Press. p. 457.ISBN 978-1-315-34072-2.
  17. ^ab"Company Profile".Unisantis Electronics. Archived fromthe original on 22 February 2007. Retrieved17 July 2019.
  18. ^Yang, B.; Buddharaju, K. D.; Teo, S. H. G.; Fu, J.; Singh, N.; Lo, G. Q.; Kwong, D. L. (2008). "CMOS compatible Gate-All-Around Vertical silicon-nanowire MOSFETs".ESSDERC 2008 - 38th European Solid-State Device Research Conference. pp. 318–321.doi:10.1109/ESSDERC.2008.4681762.ISBN 978-1-4244-2363-7.S2CID 34063783.
  19. ^"IEEE Morris N. Liebmann Memorial Award Recipients".Institute of Electrical and Electronics Engineers (IEEE). Archived fromthe original on June 6, 2008. RetrievedMarch 20, 2017.
  20. ^Tony Smith (July 31, 2006)."Toshiba settles spat with Flash memory inventor: Boffin gets ¥87m but wanted ¥1bn".The Register. RetrievedMarch 20, 2017.
  21. ^Kristin Lewotsky (July 2, 2013)."Why Does the Nobel Prize Keep Forgetting Memory?".EE Times. RetrievedMarch 20, 2017.
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