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    Experimental band structure of semimetal bismuth

    G. Jezequel andJ. Thomas

    I. Pollini

    • Laboratoire de Spectroscopie du Solide (URA 1202 CNRS), Faculté des Sciences de l’Université de Rennes I, F-35042 Rennes-CEDEX, France

    • Istituto Nazionale per la Fisica della Materia (INFM), Dipartimento di Fisica dell’Università di Milano, Via Celoria 16, 20133 Milano, Italy

    Phys. Rev. B56, 6620 –Published 15 September, 1997

    DOI:https://doi.org/10.1103/PhysRevB.56.6620

    Abstract

    Angle-resolved photoemission measured from the Bi(111) surface with synchrotron radiation between 7.5 and 100 eV exhibit strong features associated with valence-band states ofp ands symmetry and electronic surface states. The valence-band dispersions ofp ands states have been measured along the symmetry lineΓΛT of the Brillouin zone, which is mapped out by recording normal emission at 300 K and below 20 K, and by discussing the photoemission results in terms of the direct-transition model. The experimental bulk electronic structure is compared with the results of band-structure calculations, obtained by a pseudopotential approach (Golin) and a relativistic augmented-plane-wave (Ferreira) method. Finally, two narrow nondispersing peaks observed in the low-temperature photoemission spectra at binding energies 0.40 and 2.95 eV are assigned to surface (or resonance) states.

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    Phys. Rev. B56, 6620– Published 15 September, 1997
    • Received 9 April 1997

    © 1997 American Physical Society

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    Phys. Rev. B56, 6620– Published 15 September, 1997
    • Received 9 April 1997

    © 1997 American Physical Society

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