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Abstract
Based on the classical HP memristor found by HP Lab, this paper presents an expanded model that making fully consideration of the influence ofRon, that is,Ron is the similar order of magnitude ofRoff. Simulations proved that in some particular conditions, the hysteresis effect of the expanded model is the same as HP memristor. A comparison was made between these two models under some given conditions. Then, we built several simulations to test the classical characteristics of the expanded HP memristor. Simulation results demonstrate that the expanded model is superior to the original in some aspects like easy switching and power saving. At last, we applied the expanded HP memristor in STDP learning simulation, which shows it is a good candidate for neural network when a threshold voltage function is proposed.
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College of Computer Science, Chongqing University, Chongqing, 400044, China
Yu Dai & Chuandong Li
College of Computer Science, Chongqing University of Post and Telecommunications, Chongqing, 400065, China
Yu Dai
College of Mathematics Science, Chongqing Normal University, Chongqing, 401331, China
Hui Wang
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Correspondence toChuandong Li.
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Dai, Y., Li, C. & Wang, H. Expanded HP memristor model and simulation in STDP learning.Neural Comput & Applic24, 51–57 (2014). https://doi.org/10.1007/s00521-013-1467-y
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