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• affiliation:Massachusetts Institute of Technology, Cambridge, USA

• Tomás M. Bañegil Palacios

• 2025
• 
  [j10]
  Deniz Umut Yildirim,Jaeyoung Jung,Amr Elsakka,Giuseppe Moschetti,Miguel M. Lopez,Jonas Hansryd,Tomás Palacios,Anantha P. Chandrakasan:
  A 0.7 cm², 3.5 GHz, -31 dBm Sensitivity Battery-Free 5G Energy-Harvester Backscatterer With 20 s Cold-Start Wake-Up Time for IoT-Enabled Warehouses.IEEE J. Solid State Circuits60(7):2595-2605 (2025)
• 
  [j9]
  Javier De Mena Pacheco,Juan M. Carrillo,Tomás Palacios,Marisa López-Vallejo:
  A Highly Power- and Area-Efficient PMU for Cell-Size Autonomous Microsystems.IEEE Trans. Circuits Syst. I Regul. Pap.72(7):3094-3103 (2025)
• 2024
• 
  [c18]
  Deniz Umut Yildirim,Jaeyoung Jung,Amr Elsakka,Giuseppe Moschetti,Miguel M. Lopez,Jonas Hansryd,Tomás Palacios,Anantha P. Chandrakasan:
  A 0.7cm² 3.5GHz, -31 dBm Sensitivity Batteryless 5G Energy Harvester Backscattering Chip for Asset Identification in IoT-Enabled Warehouses.CICC2024:1-2
• 
  [c17]
  Shisong Luo,Cheng Chang,Qingyun Xie,Tao Li,Mingfei Xu,Ziyi He,Tomás Palacios,Yuji Zhao:
  GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C.DRC2024:1-2
• 
  [c16]
  John Niroula,Matthew A. Taylor,Qingyun Xie,Pradyot Yadav,Shisong Luo,Yuji Zhao,Tomás Palacios:
  Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C.DRC2024:1-2
• 2023
• 
  [c15]
  Pradyot Yadav,Qingyun Xie,John Niroula,Gillian K. Micale,Hridibrata Pal,Tomás Palacios:
  First Demonstration of GaN RF HEMTs on Engineered Substrate.DRC2023:1-2
• 
  [c14]
  Qingyun Xie,Mengyang Yuan,John Niroula,Bejoy Sikder,Shisong Luo,Kai Fu,Nitul S. Rajput,Ayan Biswas Pranta,Pradyot Yadav,Yuji Zhao,Nadim Chowdhury,Tomás Palacios:
  Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C.VLSI Technology and Circuits2023:1-2
• 2022
• 
  [c13]
  Yiyue Luo,Kui Wu,Andrew Spielberg,Michael Foshey,Daniela Rus,Tomás Palacios,Wojciech Matusik:
  Digital Fabrication of Pneumatic Actuators with Integrated Sensing by Machine Knitting.CHI2022:175:1-175:13
• 2021
• 
  [c12]
  Yiyue Luo,Kui Wu,Tomás Palacios,Wojciech Matusik:
  KnitUI: Fabricating Interactive and Sensing Textiles with Machine Knitting.CHI2021:668:1-668:12
• 
  [c11]
  Yiyue Luo,Yunzhu Li,Michael Foshey,Wan Shou,Pratyusha Sharma,Tomás Palacios,Antonio Torralba,Wojciech Matusik:
  Intelligent Carpet: Inferring 3D Human Pose From Tactile Signals.CVPR2021:11255-11265
• 
  [c10]
  Nadim Chowdhury,Jaeyoung Jung,Qingyun Xie,Mengyang Yuan,Kai Cheng,Tomás Palacios:
  Performance Estimation of GaN CMOS Technology.DRC2021:1-2
• 
  [c9]
  Joshua A. Perozek,Ahmad Zubair,Tomás Palacios:
  Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz.DRC2021:1-2
• 2020
• 
  [c8]
  Girish Rughoobur,J. Zhao,Lay Jain,Ahmad Zubair,Tomás Palacios,J. Kong,Akintunde Ibitayo Akinwande:
  Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors.DRC2020:1-2
• 
  [c7]
  Pao-Chuan Shih,Girish Rughoobur,Peng Xiang,Kai Liu,Kai Cheng,Akintunde Ibitayo Akinwande,Tomás Palacios:
  GaN Nanowire Field Emitters with a Self-Aligned Gate Process.DRC2020:1-2
• 
  [c6]
  Ahmad Zubair,John Niroula,Nadim Chowdhury,Yuhao Zhang,Jori Lemettinen,Tomás Palacios:
  Materials and Technology Issues for the Next Generation of Power Electronic Devices.DRC2020:1-2
• 
  [c5]
  Ahmad Zubair,Joshua A. Perozek,John Niroula,O. Aktas,V. Odnoblyudov,Tomás Palacios:
  First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate.DRC2020:1-2

• 2018
• 
  [j8]
  Maria Ruzzarin,Matteo Meneghini,Carlo De Santi,Min Sun,Tomás Palacios,Gaudenzio Meneghesso,Enrico Zanoni:
  Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments.Microelectron. Reliab.88-90:620-626 (2018)
• 
  [j7]
  Charles Mackin,Elaine McVay,Tomás Palacios:
  Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors.Sensors18(2):494 (2018)
• 
  [c4]
  Maria Ruzzarin,Matteo Meneghini,Carlo De Santi,Gaudenzio Meneghesso,Enrico Zanoni,Min Sun,Tomás Palacios:
  Degradation of vertical GaN FETs under gate and drain stress.IRPS2018:4
• 2017
• 
  [j6]
  Eyal Aklimi,Daniel Piedra,Kevin Tien,Tomás Palacios,Kenneth L. Shepard:
  Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC-DC Multiphase Buck Converter.IEEE J. Solid State Circuits52(6):1618-1627 (2017)
• 2015
• 
  [c3]
  M. P. King,Jeramy Ray Dickerson,S. DasGupta,Matthew J. Marinella,R. J. Kaplar,Daniel Piedra,Min Sun,Tomás Palacios:
  Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks.IRPS2015:2
• 2013
• 
  [j5]
  Elias Towe,Tomás Palacios,Maki Suemitsu:
  Emerging graphene-based electronic & photonic devices, circuits, and systems [Scannning the Issue].Proc. IEEE101(7):1518-1521 (2013)
• 
  [j4]
  Allen Hsu,Han Wang,Yong Cheol Shin,Benjamin Mailly,Xu Zhang,Lili Yu,Yumeng Shi,Yi Hsien Lee,Madan Dubey,Ki Kang Kim,Jing Kong,Tomás Palacios:
  Large-Area 2-D Electronics: Materials, Technology, and Devices.Proc. IEEE101(7):1638-1652 (2013)
• 2012
• 
  [c2]
  Daniel Piedra,Hyung-Seok Lee,Tomás Palacios,Xiang Gao,Shiping Guo:
  Scaling of InAlN/GaN power transistors.ESSDERC2012:314-317
• 
  [c1]
  Nick L. Marcoux,Christopher J. Fisher,Doug White,John Lachapelle,Tomás Palacios,Omair Saadat,Sameer Sonkusale:
  A new GaN HEMT nonlinear model for evaluation and design of 1-2 watt power amplifiers.MWSCAS2012:53-56
• 2010
• 
  [j3]
  Tomás Palacios,Allen Hsu,Han Wang:
  Applications of graphene devices in RF communications.IEEE Commun. Mag.48(6):122-128 (2010)
• 
  [j2]
  Jungwoo Joh,Feng Gao,Tomás Palacios,Jesús A. del Alamo:
  A model for the critical voltage for electrical degradation of GaN high electron mobility transistors.Microelectron. Reliab.50(6):767-773 (2010)

• 2006
• 
  [j1]
  Andrea Corrion,Christiane Poblenz,Patrick Waltereit,Tomás Palacios,Siddharth Rajan,Umesh K. Mishra,Jim S. Speck:
  Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy.IEICE Trans. Electron.89-C(7):906-912 (2006)

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