Microelectronics Reliability, Volume 53

Volume 53, Number 1, January 2013

Special Section:Reliability of micro-interconnects in 3D IC packages

• 
  C. Robert Kao,Albert T. Wu,King-Ning Tu,Yi-Shao Lai:
  Reliability of micro-interconnects in 3D IC packages.1
• 
  King-Ning Tu,Hsiang-Yao Hsiao,Chih Chen:
  Transition from flip chip solder joint to 3D IC microbump: Its effect on microstructure anisotropy.2-6
• 
  Cheng-Ta Ko,Kuan-Neng Chen:
  Reliability of key technologies in 3D integration.7-16
• 
  Thomas Frank,Stéphane Moreau,Cédrick Chappaz,Patrick Leduc,Lucile Arnaud,Aurélie Thuaire,Emmanuel Chery,F. Lorut,Lorena Anghel,Gilles Poupon:
  Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric.17-29
• 
  Wen-Hwa Chen,Ching-Feng Yu,Hsien-Chie Cheng,Yu-min Tsai,Su-Tsai Lu:
  IMC growth reaction and its effects on solder joint thermal cycling reliability of 3D chip stacking packaging.30-40
• 
  Y. W. Chang,H. Y. Peng,R. W. Yang,Chih Chen,T. C. Chang,Chau-Jie Zhan,Jin-Ye Juang,Annie T. Huang:
  Analysis of bump resistance and current distribution of ultra-fine-pitch microbumps.41-46
• 
  Y. J. Chen,C. K. Chung,C. R. Yang,C. Robert Kao:
  Single-joint shear strength of micro Cu pillar solder bumps with different amounts of intermetallics.47-52
• 
  Tengfei Jiang,Suk-Kyu Ryu,Qiu Zhao,Jay Im,Rui Huang,Paul S. Ho:
  Measurement and analysis of thermal stresses in 3D integrated structures containing through-silicon-vias.53-62
• 
  Anirudh Udupa,Ganesh Subbarayan,Cheng-Kok Koh:
  Analytical estimates of stress around a doubly periodic arrangement of through-silicon vias.63-69
• 
  Xi Liu,Qiao Chen,Venkatesh Sundaram,Rao R. Tummala,Suresh K. Sitaraman:
  Failure analysis of through-silicon vias in free-standing wafer under thermal-shock test.70-78
• 
  Yu-Lin Shen,R. W. Johnson:
  Misalignment induced shear deformation in 3D chip stacking: A parametric numerical assessment.79-89

Regular Paper

• 
  Adelmo Ortiz-Conde,Francisco J. García-Sánchez,Juan Muci,Alberto Terán Barrios,Juin J. Liou,Ching-Sung Ho:
  Revisiting MOSFET threshold voltage extraction methods.90-104

Research Papers

• 
  Saurabh Kothawade,Koushik Chakraborty:
  Analysis and mitigation of BTI aging in register file: An application driven approach.105-113
• 
  Nihaar N. Mahatme,Indranil Chatterjee,Akash Patki,Daniel B. Limbrick,Bharat L. Bhuva,Ronald D. Schrimpf,William H. Robinson:
  An efficient technique to select logic nodes for single event transient pulse-width reduction.114-117
• 
  Yue Xu,Chun-bo Wu,Xiaoli Ji,Feng Yan,Yi Shi:
  An improved multilevel cell programming technique for 4-bits/cell localized trapping SONOS memory devices.118-122
• 
  Zhouying Zhao,Lynn Rice,Harry Efstathiadis,Pradeep Haldar:
  Annealing and thickness related performance and degradation of polymer solar cells.123-128
• 
  Jianguang Chen,Liang Feng,Yuhua Cheng:
  Research and design of a power management chip for wireless powering capsule endoscopy.129-135
• 
  Chien-Yi Huang:
  Reliability assessment of RFID reader through prognostics and health management.136-144
• 
  Toru Ikeda,Toshifumi Kanno,Nobuyuki Shishido,Noriyuki Miyazaki,Hiroyuki Tanaka,Takuya Hatao:
  Non-linear analyses of strain in flip chip packages improved by the measurement using the digital image correlation method.145-153
• 
  B. Li,X. P. Zhang,Y. Yang,L. M. Yin,Michael G. Pecht:
  Size and constraint effects on interfacial fracture behavior of microscale solder interconnects.154-163
• 
  Yap Boon Kar,Tan Cai Hui,Agileswari K. Ramasamy,Calvin Lo:
  Comparison study on reliability performance for polymer core solder balls under multiple reflow and HTS stress tests.164-173
• 
  Xin Li,Gang Chen,Xu Chen,Guo-Quan Lu,Lei Wang,Yun-Hui Mei:
  High temperature ratcheting behavior of nano-silver paste sintered lap shear joint under cyclic shear force.174-181

Volume 53, Number 2, February 2013

Special Section:Advances in ESD protection for ICs

• 
  Vesselin K. Vassilev:
  Advances in ESD protection for ICs.183
• 
  Timothy J. Maloney:
  HBM tester waveforms, equivalent circuits, and socket capacitance.184-189
• 
  Theo Smedes,M. Polewski,A. van IJzerloo,Jean Luc Lefebvre,M. Dekker:
  Pitfalls for CDM calibration procedures.190-195
• 
  Yuanzhong Paul Zhou,David Ellis,Jean-Jacques Hajjar,Andrew Olney,Juin J. Liou:
  vfTLP-V_TH: A new method for quantifying the effectiveness of ESD protection for the CDM classification test.196-204
• 
  Kil-Ho Kim,Yong-Jin Seo:
  Electrostatic discharge (ESD) protection of N-type silicon controlled rectifier with P-type MOSFET pass structure for high voltage operating I/O application.205-207
• 
  Chih-Ting Yeh,Ming-Dou Ker:
  PMOS-based power-rail ESD clamp circuit with adjustable holding voltage controlled by ESD detection circuit.208-214
• 
  Mototsugu Okushima,Junji Tsuruta:
  Secondary ESD clamp circuit for CDM protection of over 6 Gbit/s SerDes application in 40 nm CMOS.215-220
• 
  Nicolas Monnereau,Fabrice Caignet,David Trémouilles,Nicolas Nolhier,Marise Bafleur:
  Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation.221-228

Regular Research Papers

• 
  Vincent Fiori,Sébastien Gallois-Garreignot,Hervé Jaouen,Clément Tavernier:
  Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32 nm and beyond.229-235
• 
  Rajni Gautam,Manoj Saxena,R. S. Gupta,Mridula Gupta:
  Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter.236-244
• 
  Syed Askari,Mehrdad Nourani:
  An on-chip sensor to measure and compensate static NBTI-induced degradation in analog circuits.245-253
• 
  S. L. Jang,Jiann-Shiun Yuan,S. D. Yen,E. Kritchanchai,G. W. Huang:
  Experimental evaluation of hot electron reliability on differential Clapp-VCO.254-258
• 
  Bingxu Ning,Dawei Bi,Huixiang Huang,Zhengxuan Zhang,Zhiyuan Hu,Ming Chen,Shichang Zou:
  Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.259-264
• 
  Wen-Kuan Yeh,Po-Ying Chen,Kwang-Jow Gan,Jer-Chyi Wang,Chao-Sung Lai:
  The impact of interface/border defect on performance and reliability of high-k/metal-gate CMOSFET.265-269
• 
  Durga Misra,Jyothi Kasinath,Arun N. Chandorkar:
  Voltage and current stress induced variations in TiN/HfSi_xO_y/TiN MIM capacitors.270-273
• 
  Jacques Tardy,Mohsen Erouel:
  Stability of pentacene transistors under concomitant influence of water vapor and bias stress.274-278
• 
  Laura Ciammaruchi,Stefano Penna,Andrea Reale,Thomas M. Brown,Aldo Di Carlo:
  Acceleration factor for ageing measurement of dye solar cells.279-281
• 
  Luowei Zhou,Shengqi Zhou,Mingwei Xu:
  Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off.282-287
• 
  Huang-Kuang Kung,Hung-Shyong Chen,Ming-Cheng Lu:
  The wire sag problem in wire bonding technology for semiconductor packaging.288-296
• 
  Tong Hong Wang,Ching-I Tsai,Chang-Chi Lee,Yi-Shao Lai:
  Study of factors affecting warpage of HFCBGA subjected to reflow soldering-liked profile.297-302
• 
  Venkatesh Arasanipalai Raghavan,Brian Roggeman,Michael Meilunas,Peter Borgesen:
  Effects of 'Latent Damage' on pad cratering: Reduction in life and a potential change in failure mode.303-313
• 
  Hironori Tohmyoh,Shoho Ishikawa,Satoshi Watanabe,Motohisa Kuroha,Yoshikatsu Nakano:
  Estimation and visualization of the fatigue life of Pb-free SAC solder bump joints under thermal cycling.314-320
• 
  Qinghua Zhao,Anmin Hu,Ming Li,Jiangyan Sun:
  Effect of electroplating layer structure on shear property and microstructure of multilayer electroplated Sn-3.5Ag solder bumps.321-326
• 
  Yang Yang,Yongzhi Li,Hao Lu,Chun Yu,Junmei Chen:
  Interdiffusion at the interface between Sn-based solders and Cu substrate.327-333
• 
  C. Y. Khor,Mohd Zulkifly Abdullah:
  Analysis of fluid/structure interaction: Influence of silicon chip thickness in moulded packaging.334-347

Volume 53, Number 3, March 2013

Research Papers

• 
  Ganesh C. Patil,Shafi Qureshi:
  Engineering buried oxide in dopant-segregated Schottky barrier SOI MOSFET for nanoscale CMOS circuits.349-355
• 
  Vladimír Kosel,Stefano de Filippis,Liu Chen,Stefan Decker,Andrea Irace:
  FEM simulation approach to investigate electro-thermal behavior of power transistors in 3-D.356-362
• 
  Abhijit Biswas,Swagata Bhattacherjee:
  Accurate modeling of the influence of back gate bias and interface roughness on the threshold voltage of nanoscale DG MOSFETs.363-370
• 
  Jie Chen,Zhengwei Du:
  Device simulation studies on latch-up effects in CMOS inverters induced by microwave pulse.371-378
• 
  Naushad Alam,Bulusu Anand,Sudeb Dasgupta:
  The impact of process-induced mechanical stress on CMOS buffer design using multi-fingered devices.379-385
• 
  Sung-Jae Chang,Maryline Bawedin,Wade Xiong,Jong-Hyun Lee,Jung-Hee Lee,Sorin Cristoloveanu:
  Remote carrier trapping in FinFETs with ONO buried layer: Temperature effects.386-393
• 
  N. Lukyanchikova,N. Garbar,Valeriya Kudina,A. Smolanka,Eddy Simoen,Cor Claeys:
  Drain currents and their excess noise in triple gate bulk p-channel FinFETs of different geometry.394-399
• 
  Liqiang Han,Suying Yao,Jiangtao Xu,Chao Xu:
  Characteristics of random telegraph signal noise in time delay integration CMOS image sensor.400-404
• 
  Hsien-Chin Chiu,Chao-Wei Lin,Fan-Hsiu Huang,Hsuan-Ling Kao,Feng-Tso Chien,Hao-Wei Chuang,Kuo-Jen Chang,Yau-Tang Gau:
  Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate.405-408
• 
  Guoxuan Qin,Guogong Wang,Ningyue Jiang,Jianguo Ma,Zhenqiang Ma:
  On the configuration- and frequency-dependent linearity characteristics of SiGe HBTs under different impedance matching conditions.409-413
• 
  Zlatica Marinkovic,Nenad Ivkovic,Olivera Pronic-Rancic,Vera Markovic,Alina Caddemi:
  Analysis and validation of neural network approach for extraction of small-signal model parameters of microwave transistors.414-419
• 
  Chao-Wei Tang,Kuan-Ming Li,Mike Yang,Hsueh-Chuan Liao,Hong-Tsu Young:
  Improving the dielectric breakdown field of silicon light-emitting-diode sub-mount by a hybrid nanosecond laser drilling strategy.420-427
• 
  Mika Maaspuro,Aulis Tuominen:
  Thermal analysis of LED spot lighting device operating in external natural or forced heat convection.428-434
• 
  Bong-Min Song,Bongtae Han,Joon-Hyun Lee:
  Optimum design domain of LED-based solid state lighting considering cost, energy consumption and reliability.435-442
• 
  Artur Wymyslowski,Lukasz Dowhan:
  Application of nanoindentation technique for investigation of elasto-plastic properties of the selected thin film materials.443-451
• 
  P. Jesudoss,Alan Mathewson,W. M. D. Wright,Frank A. Stam:
  Mechanical assessment of an anisotropic conductive adhesive joint of a direct access sensor on a flexible substrate for a swallowable capsule application.452-462
• 
  Jong-Ning Aoh,Cheng-Li Chuang,Min-Yi Kang:
  Reliability of TCT and HH/HT test performed in chips and flex substrates assembled by thermosonic flip-chip bonding process.463-472
• 
  Vemal Raja Manikam,Khairunisak Abdul Razak,Kuan Yew Cheong:
  Reliability of sintered Ag₈₀-Al₂₀ die attach nanopaste for high temperature applications on SiC power devices.473-480
• 
  Anupama Tiwari,Dilip Roy:
  Estimation of reliability of mobile handsets using Cox-proportional hazard model.481-487
• 
  Aiwu Ruan,Shi Kang,Yu Wang,Xiao Han,Zujian Zhu,Yongbo Liao,Peng Li:
  A Built-In Self-Test (BIST) system with non-intrusive TPG and ORA for FPGA test and diagnosis.488-498

Research Notes

• 
  D. Nirmal,P. Vijayakumar,Divya Mary Thomas,Binola K. Jebalin,N. Mohankumar:
  Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics.499-504
• 
  Kong-Pang Pun,Lei Sun,Bing Li:
  Unit capacitor array based SAR ADC.505-508
• 
  Seung Eun Lee:
  Adaptive error correction in Orthogonal Latin Square Codes for low-power, resilient on-chip interconnection network.509-511

Volume 53, Number 4, April 2013

Research Papers

• 
  Hakim Tahi,Boualem Djezzar,Abdelmadjid Benabdelmoumene:
  A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues.513-519
• 
  Toufik Bentrcia,Fayçal Djeffal,M. Chahdi:
  An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects.520-527
• 
  Jun-Hyuk Seo,Ji-Young Kim,Young-Bae Kim,Dong-Wook Kim,Haeri Kim,Hyun Cho,Duck-Kyun Choi:
  Multi-level storage in a nano-floating gate MOS capacitor using a stepped control oxide.528-532
• 
  Narjes Moghadam,Mohammad Kazem Moravvej-Farshi,Mohammad Reza Aziziyan:
  Design and simulation of MOSCNT with band engineered source and drain regions.533-539
• 
  Mahdiar Hosein Ghadiry,Mahdieh Nadi Senjani,M. Bahadoran,Asrulnizam Bin Abd Manaf,H. Karimi,Hatef Sadeghi:
  An analytical approach to calculate effective channel length in graphene nanoribbon field effect transistors.540-543
• 
  Xingming Long,Rui-Jin Liao,Jing Zhou,Zhi Zeng:
  Thermal uniformity of packaging multiple light-emitting diodes embedded in aluminum-core printed circuit boards.544-553
• 
  Han-Kuei Fu,Chien-Ping Wang,Hsin-Chien Chiang,Tzung-Te Chen,Chiu-Ling Chen,Pei-Ting Chou:
  Evaluation of temperature distribution of LED module.554-559
• 
  V. S. Balderrama,Magali Estrada,Aurelien Viterisi,Pilar Formentin,Josep Pallarès,Josep Ferré-Borrull,Emilio Palomares,Lluís F. Marsal:
  Correlation between P3HT inter-chain structure and J_sc of P3HT: PC_[70]BM blends for solar cells.560-564
• 
  Jawar Singh,Narayanan Vijaykrishnan:
  A highly reliable NBTI Resilient 6T SRAM cell.565-572
• 
  Orazio Aiello,Franco Fiori:
  A new MagFET-based integrated current sensor highly immune to EMI.573-581
• 
  Adam Golda,Andrzej Kos:
  Optimum control of microprocessor throughput under thermal and energy saving constraints.582-591
• 
  Anindya Jana,Nameirakpam Basanta Singh,J. K. Sing,Subir Kumar Sarkar:
  Design and simulation of hybrid CMOS-SET circuits.592-599
• 
  Ernest E. S. Ong,Mohd Zulkifly Abdullah,W. K. Loh,C. K. Ooi,R. Chan:
  FSI implications of EMC rheological properties to 3D IC with TSV structures during plastic encapsulation process.600-611
• 
  Masaki Omiya,Kozo Koiwa,Nobuyuki Shishido,Shoji Kamiya,Chuantong Chen,Hisashi Sato,Masahiro Nishida,Takashi Suzuki,Tomoji Nakamura,Toshiaki Suzuki,Takeshi Nokuo:
  Experimental and numerical evaluation of interfacial adhesion on Cu/SiN in LSI interconnect structures.612-621
• 
  Xinjun Sheng,Lei Jia,Zhenhua Xiong,Zhiping Wang,Han Ding:
  ACF-COG interconnection conductivity inspection system using conductive area.622-628
• 
  Yao Yao,Leon M. Keer:
  Cohesive fracture mechanics based numerical analysis to BGA packaging and lead free solders under drop impact.629-637
• 
  Seong-Hun Na,Seung-Kyu Lim,Jin-Soo Kim,Hwa-Sun Park,Heung-Jae Oh,Jin-Won Choi,Su-Jeong Suh:
  Experimental study of bump void formation according to process conditions.638-644
• 
  Gang Chen,Ze-Sheng Zhang,Yun-Hui Mei,Xin Li,Guo-Quan Lu,Xu Chen:
  Ratcheting behavior of sandwiched assembly joined by sintered nanosilver for power electronics packaging.645-651
• 
  Qinghua Wang,Satoshi Kishimoto,Huimin Xie,Zhanwei Liu,Xinhao Lou:
  In situ high temperature creep deformation of micro-structure with metal film wire on flexible membrane using geometric phase analysis.652-657

Volume 53, Number 5, May 2013

Research Papers

• 
  Ryuji Tomita,Hidehiko Kimura,M. Yasuda,K. Maeda,S. Ueno,T. Tomizawa,Y. Kunimune,H. Nakamura,M. Moritoki,Hiroshi Iwai:
  Formation of high resistivity phases of nickel silicide at small area.659-664
• 
  Ryuji Tomita,Hidehiko Kimura,M. Yasuda,K. Maeda,S. Ueno,T. Tonegawa,T. Fujimoto,M. Moritoki,Hiroshi Iwai:
  Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions.665-669
• 
  Behrouz Afzal,Behzad Ebrahimi,Ali Afzali-Kusha,Hamid Mahmoodi:
  An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilities.670-675
• 
  A. A. Dakhel,W. E. Alnaser:
  Experimental analysis of Ga₂O₃: Ti films grown on Si and glass substrates.676-680
• 
  Libor Pína,Jan Vobecký:
  High-power silicon P-i-N diode with cathode shorts: The impact of electron irradiation.681-686
• 
  Lingli Jiang,Hang Fan,Ming Qiao,Bo Zhang,Zhaoji Li:
  ESD characterization of a 190V LIGBT SOI ESD power clamp structure for plasma display panel applications.687-693
• 
  Yamin Zhang,Shiwei Feng,Hui Zhu,Jianwei Zhang,Bing Deng:
  Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs.694-700
• 
  Keng Chen,Nadarajah Narendran:
  Estimating the average junction temperature of AlGaInP LED arrays by spectral analysis.701-705
• 
  Viviana Mulloni,Francesco Solazzi,F. Ficorella,A. Collini,Benno Margesin:
  Influence of temperature on the actuation voltage of RF-MEMS switches.706-711
• 
  J. Assaf:
  Extraction of noise spectral densities(intrinsic and irradiation contributions) of a charge preamplifier based on JFET.712-717
• 
  Naushad Alam,Bulusu Anand,Sudeb Dasgupta:
  The impact of process-induced mechanical stress in narrow width devices and variable-taper CMOS buffer design.718-724
• 
  Qianwen Chen,Wuyang Yu,Cui Huang,Zhimin Tan,Zheyao Wang:
  Reliability of through-silicon-vias (TSVs) with benzocyclobutene liners.725-732
• 
  H. X. Xie,Nikhilesh Chawla:
  Mechanical shock behavior of Sn-3.9Ag-0.7Cu and Sn-3.9Ag-0.7Cu-0.5Ce solder joints.733-740
• 
  Shoho Ishikawa,Hironori Tohmyoh,Satoshi Watanabe,Tomonori Nishimura,Yoshikatsu Nakano:
  Extending the fatigue life of Pb-free SAC solder joints under thermal cycling.741-747
• 
  Xiao-feng Wei,Yu-kun Zhang,Ri-chu Wang,Yan Feng:
  Microstructural evolution and shear strength of AuSn20/Ni single lap solder joints.748-754
• 
  Balázs Illés,Barbara Horváth:
  Whiskering behaviour of immersion tin surface coating.755-760
• 
  Didier Chicot,K. Tilkin,K. Jankowski,Artur Wymyslowski:
  Reliability analysis of solder joints due to creep and fatigue in microelectronic packaging using microindentation technique.761-766
• 
  Chenglong Liao,Dan Guo,Shizhu Wen,Xinchun Lu,Jianbin Luo:
  Stress analysis of Cu/low-k interconnect structure during whole Cu-CMP process using finite element method.767-773
• 
  Peter Filipp Fuchs,Gerald Pinter,Zoltan Major:
  PCB drop test lifetime assessment based on simulations and cyclic bend tests.774-781

Volume 53, Number 6, June 2013

Special Section:Advances in Battery Reliability

• 
  Qiang Miao:
  Enabling technologies for sustainable battery: Advances in battery reliability.783
• 
  Laurent Gagneur,Ana Lucia Driemeyer-Franco,Christophe Forgez,Guy Friedrich:
  Modeling of the diffusion phenomenon in a lithium-ion cell using frequency or time domain identification.784-796
• 
  Weilin Luo,Chao Lyu,Lixin Wang,Liqiang Zhang:
  An approximate solution for electrolyte concentration distribution in physics-based lithium-ion cell models.797-804
• 
  Qiang Miao,Lei Xie,Hengjuan Cui,Wei Liang,Michael G. Pecht:
  Remaining useful life prediction of lithium-ion battery with unscented particle filter technique.805-810
• 
  Yinjiao Xing,Eden W. M. Ma,Kwok-Leung Tsui,Michael G. Pecht:
  An ensemble model for predicting the remaining useful performance of lithium-ion batteries.811-820
• 
  Bing Long,Weiming Xian,Lin Jiang,Zhen Liu:
  An improved autoregressive model by particle swarm optimization for prognostics of lithium-ion batteries.821-831
• 
  Datong Liu,Jingyue Pang,Jianbao Zhou,Yu Peng,Michael G. Pecht:
  Prognostics for state of health estimation of lithium-ion batteries based on combination Gaussian process functional regression.832-839
• 
  Wei He,Nicholas Williard,Chaochao Chen,Michael G. Pecht:
  State of charge estimation for electric vehicle batteries using unscented kalman filtering.840-847

Regular Research Papers

• 
  Michelly de Souza,Bruna Cardoso Paz,Denis Flandre,Marcelo Antonio Pavanello:
  Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs.848-855
• 
  J. S. Yuan,E. Kritchanchai:
  Power amplifier resilient design for process, voltage, and temperature variations.856-860
• 
  Xiaowu Cai,Junxiu Wei,Chao Liang,Zhe Gao,Chuan Lv:
  Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process.861-866
• 
  Albin Bayerl,Mario Lanza,Lidia Aguilera,Marc Porti,Montserrat Nafría,Xavier Aymerich,Stefan De Gendt:
  Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.867-871
• 
  Eric Heller,Sukwon Choi,Donald Dorsey,Ramakrishna Vetury,Samuel Graham:
  Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs.872-877
• 
  J.-S. Yuan,Y. Wang,J. Steighner,H.-D. Yen,S.-L. Jang,G.-W. Huang,W.-K. Yeh:
  Reliability analysis of pHEMT power amplifier with an on-chip linearizer.878-884
• 
  Romain Cauchois,Man Su Yin,Aline Gouantes,Xavier Boddaert:
  RFID tags for cryogenic applications: Experimental and numerical analysis of thermo-mechanical behaviour.885-891
• 
  Sri Chaitra Chavali,Yuvraj Singh,Ganesh Subbarayan,Anurag Bansal,Mudasir Ahmad:
  Effect of pad surface finish and reflow cooling rate on the microstructure and the mechanical behavior of SnAgCu solder alloys.892-898
• 
  P. J. Shang,L. Zhang,Zhi-Quan Liu,J. Tan,J. K. Shang:
  Ex situ observations of fast intermetallic growth on the surface of interfacial region between eutectic SnBi solder and Cu substrate during solid-state aging process.899-905
• 
  Wei-Chih Chiu,Bing-Yue Tsui:
  Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature process.906-911
• 
  Ramin Rajaei,Mahmoud Tabandeh,Mahdi Fazeli:
  Low cost soft error hardened latch designs for nano-scale CMOS technology in presence of process variation.912-924

Volume 53, Number 7, July 2013

Research Papers

• 
  Ephraim Suhir:
  Could electronics reliability be predicted, quantified and assured?925-936
• 
  Thomas Aichinger,Michael Nelhiebel,Tibor Grasser:
  Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures.937-946
• 
  K. S. Kim,H. J. Kim,P. H. Choi,H. S. Park,I. H. Joo,J. E. Song,D. H. Song,Byoung Deog Choi:
  Hot hole-induced device degradation by drain junction reverse current.947-951
• 
  Qiang Cui,Shuyun Zhang,Juin J. Liou:
  Novel ESD protection solution for single-ended mixer in GaAs pHEMT technology.952-955
• 
  Michal Jablonski,Frederick Bossuyt,Jan Vanfleteren,Thomas Vervust,H. de Vries:
  Reliability of a stretchable interconnect utilizing terminated, in-plane meandered copper conductor.956-963
• 
  Wei Chen,Raphael Okereke,Suresh K. Sitaraman:
  Compliance analysis of multi-path fan-shaped interconnects.964-974
• 
  Fan Yang,Shaker A. Meguid:
  Efficient multi-level modeling technique for determining effective board drop reliability of PCB assembly.975-984
• 
  Yingzhi Zeng,Kewu Bai,Hongmei Jin:
  Thermodynamic study on the corrosion mechanism of copper wire bonding.985-1001
• 
  Alireza Rezvani,Aashish Shah,M. Mayer,Norman Y. Zhou,J. T. Moon:
  Role of impact ultrasound on bond strength and Al pad splash in Cu wire bonding.1002-1008
• 
  Barbara Horváth:
  Influence of copper diffusion on the shape of whiskers grown on bright tin layers.1009-1020
• 
  Huai-Hui Ren,Xi-Shu Wang,Su Jia:
  Fracture analysis on die attach adhesives for stacked packages based on in-situ testing and cohesive zone model.1021-1028
• 
  Yin Lee Goh,Agileswari K. Ramasamy,Farrukh Hafiz Nagi,Aidil Azwin Zainul Abidin:
  DSP based fuzzy and conventional overcurrent relay controller comparisons.1029-1035
• 
  Sandra M. Djosic,Milun Jevtic:
  Dynamic voltage and frequency scaling algorithm for fault-tolerant real-time systems.1036-1042

Volume 53, Number 8, August 2013

Special Section:Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems (EuroSimE 2012 International Conference)

• 
  Artur Wymyslowski:
  Guest Editorial: 2012 EuroSimE International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems.1043-1044
• 
  Federica Confalonieri,Giuseppe Cocchetti,Aldo Ghisi,Alberto Corigliano:
  A domain decomposition method for the simulation of fracture in polysilicon MEMS.1045-1054
• 
  Stoyan Stoyanov,Chris Bailey,M. O. Alam,Chunyan Yin,Chris Best,Peter Tollafield,Rob Crawford,Mike Parker,Jim Scott:
  Modelling methodology for thermal analysis of hot solder dip process.1055-1067
• 
  M. H. M. Kouters,G. H. M. Gubbels,O. Dos Santos Ferreira:
  Characterization of intermetallic compounds in Cu-Al ball bonds: Mechanical properties, interface delamination and thermal conductivity.1068-1075
• 
  Jiri Jakovenko,J. Formánek,X. Perpiñà,Xavier Jordà,Miquel Vellvehí,Robert J. Werkhoven,Miroslav Husák,J. M. G. Kunen,P. Bancken,P. J. Bolt,A. Gasse:
  Design methodologies for reliability of SSL LED boards.1076-1083
• 
  B. Pardo,A. Gasse,A. Fargeix,Jiri Jakovenko,Robert J. Werkhoven,Xavier Perpiñà,Xavier Jordà,Miquel Vellvehí,T. Van Weelden,P. Bancken:
  Thermal resistance investigations on new leadframe-based LED packages and boards.1084-1094
• 
  Frank Kraemer,Steffen Wiese,Erik Peter,Jonas Seib:
  Mechanical problems of novel back contact solar modules.1095-1100
• 
  Nancy Iwamoto:
  Molecularly derived mesoscale modeling of an epoxy/Cu interface: Interface roughness.1101-1110
• 
  O. Hölck,Jörg Bauer,Tanja Braun,Hans Walter,Olaf Wittler,Bernhard Wunderle,Klaus-Dieter Lang:
  Transport of moisture at epoxy-SiO₂ interfaces investigated by molecular modeling.1111-1116

Regular Research Papers

• 
  Prasanna Tamilselvan,Pingfeng Wang,Michael G. Pecht:
  A multi-attribute classification fusion system for insulated gate bipolar transistor diagnostics.1117-1129
• 
  Hsien-Chin Chiu,Hsiang-Chun Wang,Chao-Wei Lin,Yi-Cheng Luo,Hsuan-Ling Kao,Feng-Tso Chien,Ping-Kuo Weng,Yan-Tang Gau,Hao-Wei Chuang:
  Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design.1130-1136
• 
  ShiQing Gao,YouHe Zhou:
  Self-alignment of micro-parts using capillary interaction: Unified modeling and misalignment analysis.1137-1148
• 
  Hualiang Huang,Zhiquan Pan,Yubing Qiu,Xingpeng Guo:
  Electrochemical corrosion behaviour of copper under periodic wet-dry cycle condition.1149-1158
• 
  Hao-Wen Hsueh,Fei-Yi Hung,Truan-Sheng Lui,Li-Hui Chen:
  Effect of the direct current on microstructure, tensile property and bonding strength of pure silver wires.1159-1163

Research Note

• 
  Jianxin Zhu,Zhaochen Zhu:
  High-precision Berenger modes of dual-layer micro-waveguides terminated with a perfectly matched layer for on-chip optical interconnections.1164-1167

Volume 53, Numbers 9-11, September - November 2013

• 
  Nathalie Labat,François Marc:
  Editorial.1169-1170

Tutorial

• 
  Christopher L. Henderson:
  Failure analysis techniques for a 3D world.1171-1178
• 
  Charles E. Bauer,Herbert J. Neuhaus:
  Embedded packaging and assembly; Reliability and supply chain implications.1179-1182

Topic A:Quality and Reliability Techniques for Devices and Systems

• 
  Chang-Chih Chen,Fahad Ahmed,Linda Milor:
  Impact of NBTI/PBTIon SRAMs within microprocessor systems: Modeling, simulation, and analysis.1183-1188
• 
  Arwa Ben Dhia,Samuel N. Pagliarini,Lirida Alves de Barros Naviner,Habib Mehrez,Philippe Matherat:
  A defect-tolerant area-efficient multiplexer for basic blocks in SRAM-based FPGAs.1189-1193
• 
  Corinne Bergès,Julien Goxe:
  Benefits of field failure distribution modeling to the failure analysis.1194-1198
• 
  P. Steinhorst,Tilo Poller,Josef Lutz:
  Approach of a physically based lifetime model for solder layers in power modules.1199-1202
• 
  Paolo Lorenzi,Rosario Rao,T. Prifti,Fernanda Irrera:
  Impact of the forming conditions and electrode metals on read disturb in HfO₂-based RRAM.1203-1207
• 
  Hassen Aziza,Marc Bocquet,Jean-Michel Portal,Mathieu Moreau,Christophe Muller:
  A novel test structure for OxRRAM process variability evaluation.1208-1212
• 
  Nicoleta Cucu Laurenciu,Sorin Dan Cotofana:
  A nonlinear degradation path dependent end-of-life estimation framework from noisy observations.1213-1217
• 
  Pierre Canet,Jérémy Postel-Pellerin,Jean-Luc Ogier:
  Access resistor modelling for EEPROM's retention test vehicle.1218-1223
• 
  Wang Kang,Weisheng Zhao,Zhaohao Wang,Yue Zhang,Jacques-Olivier Klein,Youguang Zhang,Claude Chappert,Dafine Ravelosona:
  A low-cost built-in error correction circuit design for STT-MRAM reliability improvement.1224-1229
• 
  Samuel N. Pagliarini,Arwa Ben Dhia,Lirida Alves de Barros Naviner,Jean-François Naviner:
  SNaP: A novel hybrid method for circuit reliability assessment under multiple faults.1230-1234
• 
  S. I. Chan,J. H. Kang,Joong Soon Jang:
  Reliability improvement of automotive electronics based on environmental stress screen methodology.1235-1238

Topic B:Characterisation and Modelling of Failure Mechanism in Si technologies & Nanoelectronics

• 
  S. Amara-Dababi,Ricardo C. Sousa,H. Béa,Claire Baraduc,Ken Mackay,Bernard Dieny:
  Breakdown mechanisms in MgO based magnetic tunnel junctions and correlation with low frequency noise.1239-1242
• 
  V. Velayudhan,Francisco Gámiz,Javier Martín-Martínez,Rosana Rodríguez,Montserrat Nafría,Xavier Aymerich:
  Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs.1243-1246
• 
  Albert Crespo-Yepes,Javier Martín-Martínez,Rosana Rodríguez,Montserrat Nafría,Xavier Aymerich:
  Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications.1247-1251
• 
  Keith A. Jenkins,Pong-Fei Lu:
  On-chip circuit to monitor long-term NBTI and PBTI degradation.1252-1256
• 
  X. Saura,D. Moix,Jordi Suñé,Paul K. Hurley,Enrique Miranda:
  Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress.1257-1260
• 
  M. K. Lim,Vassilios A. Chouliaras,Chee Lip Gan,Vincent M. Dwyer:
  Bidirectional electromigration failure.1261-1265
• 
  Sonia Ben Dhia,Alexandre Boyer:
  Long-term Electro-Magnetic Robustness of Integrated Circuits: EMRIC research project.1266-1272
• 
  Jianfei Wu,Alexandre Boyer,Jiancheng Li,Sonia Bendhia,Bertrand Vrignon:
  LDO regulator DC characteristic and susceptibility prediction after electrical stress ageing.1273-1277
• 
  Fabrice Caignet,Nicolas Nolhier,Marise Bafleur,A. Wang,Nicolas Mauran:
  On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress.1278-1283
• 
  Philippe Galy,T. Lim,J. Bourgeat,Jean Jimenez,Boris Heitz,D. Marin-Cudraz,Ph. Benech,J. M. Fournier:
  Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF application.1284-1287
• 
  Jian-Zhi Zhu,François Fouquet,Blaise Ravelo,A. Alaeddine,Moncef Kadi:
  Experimental investigation of Zener diode reliability under pulsed Electrical Overstress (EOS).1288-1292
• 
  K. Guetarni,Antoine D. Touboul,Jerome Boch,L. Foro,A. Privat,Alain Michez,J.-R. Vaillé,Frédéric Saigné:
  Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model.1293-1299
• 
  Alexandre Sarafianos,Cyril Roscian,Jean-Max Dutertre,Mathieu Lisart,Assia Tria:
  Electrical modeling of the photoelectric effect induced by a pulsed laser applied to an SRAM cell.1300-1305
• 
  Alain Michez,Jerome Boch,S. Dhombres,Frédéric Saigné,Antoine D. Touboul,J.-R. Vaillé,Laurent Dusseau,E. Lorfèvre,R. Ecoffet:
  Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET.1306-1310
• 
  Luca Sterpone:
  SEL-UP: A CAD tool for the sensitivity analysis of radiation-induced Single Event Latch-Up.1311-1314
• 
  Nogaye Mbaye,Vincent Pouget,Frédéric Darracq,Dean Lewis:
  Characterization and modeling of laser-induced single-event burn-out in SiC power diodes.1315-1319
• 
  Jean-Max Dutertre,Rodrigo Possamai Bastos,Olivier Potin,Marie-Lise Flottes,Bruno Rouzeyre,Giorgio Di Natale:
  Sensitivity tuning of a bulk built-in current sensor for optimal transient-fault detection.1320-1324
• 
  I. El Moukhtari,Vincent Pouget,C. Larue,Frédéric Darracq,Dean Lewis,Philippe Perdu:
  Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell.1325-1328
• 
  Seung Min Lee,Hyun Jun Jang,Jong Tae Park:
  Impact of back gate biases on hot carrier effects in multiple gate junctionless transistors.1329-1332
• 
  Joan Marc Rafí,M. B. González,Kenichiro Takakura,I. Tsunoda,M. Yoneoka,Oihane Beldarrain,Miguel Zabala,Francesca Campabadal:
  2 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al₂O₃ dielectrics of different thickness.1333-1337
• 
  Pyung Moon,Jun Yeong Lim,Tae-Un Youn,Keum-Whan Noh,Sung-Kye Park,Ilgu Yun:
  Methodology for improvement of data retention in floating gate flash memory using leakage current estimation.1338-1341
• 
  Vl. Kolkovsky,K. Lukat:
  Influence of copper on the diffusion length of the minority carriers in devices based on n-type Si/SiO₂.1342-1345
• 
  X. Saura,X. Lian,David Jiménez,Enrique Miranda,Xavier Borrisé,Francesca Campabadal,Jordi Suñé:
  Field-effect control of breakdown paths in HfO₂ based MIM structures.1346-1350
• 
  Seonhaeng Lee,Cheolgyu Kim,Hyeokjin Kim,Gang-Jun Kim,Ji-Hoon Seo,Donghee Son,Bongkoo Kang:
  Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs.1351-1354
• 
  Cicero Nunes,Paulo F. Butzen,André Inácio Reis,Renato P. Ribas:
  BTI, HCI and TDDB aging impact in flip-flops.1355-1359
• 
  Paulo F. Butzen,Vinícius Dal Bem,André Inácio Reis,Renato P. Ribas:
  BTI and HCI first-order aging estimation for early use in standard cell technology mapping.1360-1364
• 
  Aymen Moujbani,Jörg Kludt,Kirsten Weide-Zaage,Markus Ackermann,Verena Hein,Lutz Meinshausen:
  Dynamic simulation of migration induced failure mechanism in integrated circuit interconnects.1365-1369

Topic C:Advanced Techniques for Failure Analysis and case studies

• 
  Yasunori Goto,Toru Matsumoto,Kiyoshi Nikawa:
  Observation of impurity diffusion defect in IGBT using a laser terahertz emission microscope technique.1370-1374
• 
  W. Ben Naceur,Nathalie Malbert,Nathalie Labat,Hélène Frémont,D. Carisetti,J. C. Clement,J. L. Muraro,Barbara Bonnet:
  Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques.1375-1380
• 
  Emre Ilgünsatiroglu,Alexey Yu. Illarionov,Mauro Ciappa:
  Unstructured tetrahedric meshes for the description of complex three-dimensional sample geometries in Monte Carlo simulation of scanning electron microscopy images for metrology applications.1381-1386
• 
  Samuel Chef,Sabir Jacquir,Kevin Sanchez,Philippe Perdu,Stéphane Binczak:
  Frequency mapping in dynamic light emission with wavelet transform.1387-1392
• 
  Yann Weber,Julien Goxe,M. Castignolles:
  Detectability of automotive power MOSFET on-resistance failure at high current induced by Wafer Fab process excursion.1393-1398
• 
  Massimo Vanzi,Simona Podda,Elodia Musu,Robert Cao:
  XEBIC at the Dual Beam.1399-1402
• 
  Franc Dugal,Mauro Ciappa:
  Avoiding misleading artefacts in metallurgical preparation of die attach solder joints in high power modules.1403-1408
• 
  Hiroaki Shiratsuchi,Kohei Matsushita,Ichiro Omura:
  IGBT chip current imaging system by scanning local magnetic field.1409-1412
• 
  Ralf Heiderhoff,H. Li,Thomas Riedl:
  Dynamic Near-Field Scanning Thermal Microscopy on thin films.1413-1417
• 
  Jan Gaudestad,Vladimir Talanov,M. Marchetti:
  Opens localization on silicon level in a Chip Scale Package using space domain reflectometry.1418-1421
• 
  Kristian Bonderup Pedersen,Peter Kjær Kristensen,Vladimir N. Popok,Kjeld Pedersen:
  Micro-sectioning approach for quality and reliability assessment of wire bonding interfaces in IGBT modules.1422-1426
• 
  Andreas Rummel,Klaus Schock,Matthias Kemmler,Andrew Smith,Stephan Kleindiek:
  Repairing bonding wire connections using a microsoldering unit inside an SEM.1427-1429
• 
  Alexander Hofer,Roland Biberger,Günther Benstetter,Björn Wilke,Holger Göbel:
  Scanning probe microscopy based electrical characterization of thin dielectric and organic semiconductor films.1430-1433
• 
  Chris Richardson,Gary Liechty,Clay Smith,Michael Karow:
  Contoured device sample preparation technique for ±5 μm remaining silicon thicknesses that meets solid immersion lens requirements.1434-1438

Topic D1:Failures in Microwave, Wide Band-Gap Devices

• 
  P. J. van der Wel,T. Rödle,Benoit Lambert,Hervé Blanck,Maximilian Dammann:
  Qualification of 50 V GaN on SiC technology for RF power amplifiers.1439-1443
• 
  Clément Fleury,Rimma Zhytnytska,Sergey Bychikhin,Mattia Capriotti,Oliver Hilt,Domenica Visalli,Gaudenzio Meneghesso,Enrico Zanoni,Joachim Würfl,Joff Derluyn,Gottfried Strasser,Dionyz Pogany:
  Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications.1444-1449
• 
  Laurent Brunel,Benoit Lambert,P. Mezenge,J. Bataille,D. Floriot,Jan Grünenpütt,Hervé Blanck,D. Carisetti,Y. Gourdel,Nathalie Malbert,Arnaud Curutchet,Nathalie Labat:
  Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.1450-1455
• 
  Isabella Rossetto,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni:
  Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics.1456-1460
• 
  Alessandro Chini,Fabio Soci,Fausto Fantini,A. Nanni,A. Pantellini,Claudio Lanzieri,Gaudenzio Meneghesso,Enrico Zanoni:
  Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs.1461-1465
• 
  Alain Bensoussan,Ronan Marec,Jean Luc Muraro,L. Portal,Philippe Calvel,Catherine Barillot,Marie Genevieve Perichaud,Laurent Marchand,Gael Vignon:
  GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing.1466-1470
• 
  Andre G. Metzger,Vincenzo d'Alessandro,Niccolò Rinaldi,Peter J. Zampardi:
  Evaluation of thermal balancing techniques in InGaP/GaAs HBT power arrays for wireless handset power amplifiers.1471-1475
• 
  Isabella Rossetto,Fabiana Rampazzo,Riccardo Silvestri,Alberto Zanandrea,Christian Dua,Sylvain L. Delage,Mourad Oualli,Matteo Meneghini,Enrico Zanoni,Gaudenzio Meneghesso:
  Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.1476-1480
• 
  Carmine Abbate,Francesco Iannuzzo,Giovanni Busatto:
  Thermal instability during short circuit of normally-off AlGaN/GaN HFETs.1481-1485
• 
  Francesco Giuliani,Nicola Delmonte,Paolo Cova,Roberto Menozzi:
  Temperature-dependent reverse-bias stress of normally-off GaN power FETs.1486-1490
• 
  S. Karboyan,Jean-Guy Tartarin,M. Rzin,Laurent Brunel,Arnaud Curutchet,Nathalie Malbert,Nathalie Labat,D. Carisetti,Benoit Lambert,M. Mermoux,E. Romain-Latu,F. Thomas,C. Bouexière,C. Moreau:
  Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.1491-1495

Topic D2:Failures in Photonic Devices

• 
  Mauro A. Bettiati:
  High optical strength GaAs-based laser structures.1496-1500
• 
  Vanesa Hortelano,Julian Anaya,Jorge Souto,Juan Jiménez,J. Périnet,François J. Laruelle:
  Defect signatures in degraded high power laser diodes.1501-1505
• 
  Ephraim Suhir,Laurent Béchou:
  Saint-Venant's principle and the minimum length of a dual-coated optical fiber specimen in reliability (proof) testing.1506-1509
• 
  Simone Vaccari,Matteo Meneghini,Alessio Griffoni,Diego Barbisan,Marco Barbato,S. Carraro,Marco La Grassa,Gaudenzio Meneghesso,Enrico Zanoni:
  ESD characterization of multi-chip RGB LEDs.1510-1513
• 
  A. Royon,K. Bourhis,Laurent Béchou,Thierry Cardinal,Lionel Canioni,Yannick Deshayes:
  Durability study of a fluorescent optical memory in glass studied by luminescence spectroscopy.1514-1518
• 
  Yang Gi Yoon,J. H. Kang,I. H. Jang,S. I. Chan,Joong Soon Jang:
  Conclusion of the accelerated stress conditions affecting phosphor-converted LEDs using the fractional factorial design method.1519-1523
• 
  Matteo Dal Lago,Matteo Meneghini,Nicola Trivellin,Giovanna Mura,Massimo Vanzi,Gaudenzio Meneghesso,Enrico Zanoni:
  "Hot-plugging" of LED modules: Electrical characterization and device degradation.1524-1528
• 
  Massimo Vanzi,Giovanna Mura,M. Marongiu,T. Tomasi:
  Optical losses in single-mode laser diodes.1529-1533
• 
  Carlo De Santi,Matteo Meneghini,S. Carraro,Simone Vaccari,Nicola Trivellin,Stefania Marconi,Michael Marioli,Gaudenzio Meneghesso,Enrico Zanoni:
  Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes.1534-1537
• 
  Giovanna Mura,Massimo Vanzi,Giulia Marcello,Robert Cao:
  The role of the optical trans-characteristics in laser diode analysis.1538-1542

Topic E1:Packaging, Assemblies

• 
  Toshitaka Ishizaki,T. Satoh,A. Kuno,A. Tane,Masashi Yanase,F. Osawa,Yasushi Yamada:
  Thermal characterizations of Cu nanoparticle joints for power semiconductor devices.1543-1547
• 
  Ju Dy Lim,Susan Yeow Su Yi,MinWoo Daniel Rhee,Kam Chew Leong,Chee Cheong Wong:
  Surface roughness effect on copper-alumina adhesion.1548-1552
• 
  Peter Jacob,Giovanni Nicoletti:
  Failure causes generating aluminium protrusion/extrusion.1553-1557
• 
  Bernhard Czerny,I. Paul,Golta Khatibi,Markus Thoben:
  Experimental and analytical study of geometry effects on the fatigue life of Al bond wire interconnects.1558-1562
• 
  Peyman Rafiee,Golta Khatibi,N. Nelhiebel,Rainer Pelzer:
  Application of quantitative modal analysis for investigation of thermal degradation of microelectronic packages.1563-1567
• 
  Miao Cai,D. J. Xie,W. B. Chen,B. Y. Wu,Dao-Guo Yang,G. Q. Zhang:
  A novel soldering method to evaluate PCB pad cratering for pin-pull testing.1568-1574
• 
  Lutz Meinshausen,Hélène Frémont,Kirsten Weide-Zaage,Bernard Plano:
  Electro- and thermomigration-induced IMC formation in SnAg_3.0Cu_0.5 solder joints on nickel gold pads.1575-1580
• 
  F. L. Lau,Riko I. Made,Wahyuaji Narottama Putra,J. Z. Lim,V. C. Nachiappan,J. L. Aw,Chee Lip Gan:
  Electrical behavior of Au-Ge eutectic solder under aging for solder bump application in high temperature Electronics.1581-1586
• 
  Peter Borgesen,S. Hamasha,Mazin Obaidat,V. Raghavan,X. Dai,Michael Meilunas,M. Anselm:
  Solder joint reliability under realistic service conditions.1587-1591
• 
  Raphel Riva,Cyril Buttay,Bruno Allard,Pascal Bevilacqua:
  Migration issues in sintered-silver die attaches operating at high temperature.1592-1596
• 
  J. B. Jullien,Hélène Frémont,Jean-Yves Delétage:
  Conductive adhesive joint for extreme temperature applications.1597-1601
• 
  Anderson Pires Singulani,Hajdin Ceric,Siegfried Selberherr:
  Stress evolution in the metal layers of TSVs with Bosch scallops.1602-1605
• 
  Jörg Kludt,Kirsten Weide-Zaage,Markus Ackermann,Verena Hein:
  Dynamic simulation of octahedron slotted metal structures.1606-1610
• 
  Nicola Delmonte,Francesco Giuliani,Paolo Cova:
  Finite element modeling and characterization of lead-free solder joints fatigue life during power cycling of surface mounting power devices.1611-1616
• 
  Wissam Sabbah,Stephane Azzopardi,Cyril Buttay,Régis Meuret,Eric Woirgard:
  Study of die attach technologies for high temperature power electronics: Silver sintering and gold-germanium alloy.1617-1621

Topic E2:Passive Components and MEMS

• 
  Pierre-Louis Charvet,Pierre Nicolas,D. Bloch,B. Savornin:
  MEMS packaging reliability assessment: Residual Gas Analysis of gaseous species trapped inside MEMS cavities.1622-1627
• 
  Mohamed Ayadi,Olivier Briat,Akram Eddahech,Ronan German,Gerard Coquery,Jean-Michel Vinassa:
  Thermal cycling impacts on supercapacitor performances during calendar ageing.1628-1631
• 
  Jae-Seong Jeong:
  Field failure mechanism and reproduction due to moisture for low-voltage ZnO varistors.1632-1637
• 
  Amrane Oukaour,Mathieu Pouliquen,Boubekeur Tala-Ighil,Hamid Gualous,Eric Pigeon,Olivier Gehan,Bertrand Boudart:
  Supercapacitors aging diagnosis using least square algorithm.1638-1642
• 
  Ronan German,Olivier Briat,Ali Sari,Pascal Venet,Mohamed Ayadi,Younes Zitouni,Jean-Michel Vinassa:
  Impact of high frequency current ripple on supercapacitors ageing through floating ageing tests.1643-1647
• 
  J. Keller,Raul Mrossko,H. Dobrinski,J. Stürmann,Ralf Döring,Rainer Dudek,Sven Rzepka,Bernd Michel:
  Effect of moisture swelling on MEMS packaging and integrated sensors.1648-1654
• 
  Matroni Koutsoureli,Loukas Michalas,P. Martins,E. Papandreou,A. Leuliet,S. Bansropun,George J. Papaioannou,A. Ziaei:
  Properties of contactless and contacted charging in MEMS capacitive switches.1655-1658
• 
  Nuria Torres Matabosch,Fabio Coccetti,Mehmet Kaynak,Beatrice Espana,Bernd Tillack,Jean-Louis Cazaux:
  Failure analysis and detection methodology for capacitive RF-MEMS switches based on BEOL BiCMOS process.1659-1662
• 
  B. Wang,Jeroen De Coster,Martine Wevers,Ingrid De Wolf:
  A novel method to measure the internal pressure of MEMS thin-film packages.1663-1666
• 
  Jun-Yong Tao,Xiao-Jing Wang,Bin Liu,Yan-Lei Wang,Zhi-Qian Ren,Xun Chen:
  Improved bending fatigue life of single crystal silicon micro-beam by phosphorus doping.1667-1671
• 
  Yun-An Zhang,Jun-Yong Tao,Yan-Lei Wang,Zhi-Qian Ren,Bin Liu,Xun Chen:
  The effect of water on the mechanical properties of native oxide coated silicon structure in MEMS.1672-1675
• 
  Marcantonio Catelani,Lorenzo Ciani,Mirko Marracci,Bernardo Tellini:
  Analysis of ultracapacitors ageing in automotive application.1676-1680

Topic F:Power devices

• 
  Peter Dietrich:
  Trends in automotive power semiconductor packaging.1681-1686
• 
  Uwe Scheuermann,R. Schmidt:
  Impact of load pulse duration on power cycling lifetime of Al wire bonds.1687-1691
• 
  Akihiko Watanabe,Masanori Tsukuda,Ichiro Omura:
  Real time degradation monitoring system for high power IGBT module under power cycling test.1692-1696
• 
  Amadou Sow,Sinivassane Somaya,Yves Ousten,Jean-Michel Vinassa,Fanny Patoureaux:
  Power MOSFET active power cycling for medical system reliability assessment.1697-1702
• 
  Gilles Rostaing,Mounira Berkani,D. Mechouche,Denis Labrousse,Stéphane Lefebvre,Zoubir Khatir,Philippe Dupuy:
  Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications.1703-1706
• 
  Carmine Abbate,Giovanni Busatto,Francesco Iannuzzo,Cesare Ronsisvalle,Annunziata Sanseverino,Francesco Velardi:
  Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit.1707-1712
• 
  Vincenzo d'Alessandro,Alessandro Magnani,Michele Riccio,Yohei Iwahashi,Giovanni Breglio,Niccolò Rinaldi,Andrea Irace:
  Analysis of the UIS behavior of power devices by means of SPICE-based electrothermal simulations.1713-1718
• 
  F. Baccar,Stephane Azzopardi,L. Théolier,K. El Boubkari,Jean-Yves Delétage,Eric Woirgard:
  Electrical characterization under mechanical stress at various temperatures of PiN power diodes in a health monitoring approach.1719-1724
• 
  Jeff Moussodji,Thierry Kociniewski,Zoubir Khatir:
  Distributed electro-thermal model of IGBT chip - Application to top-metal ageing effects in short circuit conditions.1725-1729
• 
  Takuo Kikuchi,Mauro Ciappa:
  A new two-dimensional TCAD model for threshold instability in silicon carbide MOSFETs.1730-1734
• 
  D. Othman,Stéphane Lefebvre,Mounira Berkani,Zoubir Khatir,Ali Ibrahim,A. Bouzourene:
  Robustness of 1.2 kV SiC MOSFET devices.1735-1738
• 
  Michele Riccio,Alberto Castellazzi,Giuseppe De Falco,Andrea Irace:
  Experimental analysis of electro-thermal instability in SiC Power MOSFETs.1739-1744
• 
  Michael Nelhiebel,Robert Illing,Thomas Detzel,S. Wöhlert,B. Auer,S. Lanzerstorfer,M. Rogalli,W. Robl,Stefan Decker,J. Fugger,Markus Ladurner:
  Effective and reliable heat management for power devices exposed to cyclic short overload pulses.1745-1749
• 
  Toufik Azoui,Patrick Tounsi,Jean-Marie Dorkel,Jean-Michel Reynes,Jean-Luc Massol,E. Pomes:
  Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling.1750-1754
• 
  Tilo Poller,Salvatore D'Arco,Magnar Hernes,Atle Rygg Årdal,Josef Lutz:
  Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs.1755-1759
• 
  Paolo Cova,Nicola Delmonte,Francesco Giuliani,Mauro Citterio,Stefano Latorre,Massimo Lazzaroni,Agostino Lanza:
  Thermal optimization of water heat sink for power converters with tight thermal constraints.1760-1765
• 
  Koji Sasaki,Nobutada Ohno:
  Fatigue life evaluation of aluminum bonding wire in silicone gel under random vibration testing.1766-1770
• 
  Li Yang,Alberto Castellazzi:
  High temperature gate-bias and reverse-bias tests on SiC MOSFETs.1771-1773
• 
  Aaron Hutzler,Adam Tokarski,Andreas Schletz:
  Extending the lifetime of power electronic assemblies by increased cooling temperatures.1774-1777
• 
  Masayuki Yoshimura,Atsushi Uchida,Satoshi Matsumoto:
  Design issues of a thin-film p-channel SOI power MOSFET for high-temperature applications.1778-1782
• 
  Luca Maresca,Gianpaolo Romano,Giovanni Breglio,Andrea Irace:
  Physically based analytical model of the blocking I-V curve of Trench IGBTs.1783-1787
• 
  Rui Wu,Frede Blaabjerg,Huai Wang,Marco Liserre:
  Overview of catastrophic failures of freewheeling diodes in power electronic circuits.1788-1792
• 
  Mohamed Tlig,Jaleleddine Ben Hadj Slama,Mohamed Ali Belaïd:
  Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests.1793-1797

Topic G:Reliability of Photovoltaic and Organic devices:Thin Film, concentration, OLED, TFT

• 
  Nicola Wrachien,Andrea Cester,Daniele Bari,Raffaella Capelli,Riccardo D'Alpaos,Michele Muccini,Andrea Stefani,Guido Turatti,Gaudenzio Meneghesso:
  Effects of constant voltage stress on p- and n-type organic thin film transistors with poly(methyl methacrylate) gate dielectric.1798-1803
• 
  Daniele Bari,Nicola Wrachien,R. Tagliaferro,Thomas M. Brown,Andrea Reale,Aldo Di Carlo,Gaudenzio Meneghesso,Andrea Cester:
  Comparison between positive and negative constant current stress on dye-sensitized solar cells.1804-1808
• 
  Alessandro Compagnin,Matteo Meneghini,Marco Barbato,Valentina Giliberto,Andrea Cester,Massimo Vanzi,Giovanna Mura,Enrico Zanoni,Gaudenzio Meneghesso:
  Thermal and electrical investigation of the reverse bias degradation of silicon solar cells.1809-1813
• 
  Hyun Jun Jang,Seung Min Lee,Chong-Gun Yu,Jong Tae Park:
  A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors.1814-1817
• 
  N. C. Park,J. S. Jeong,B. J. Kang,D. H. Kim:
  The effect of encapsulant discoloration and delamination on the electrical characteristics of photovoltaic module.1818-1822
• 
  T. H. Kim,N. C. Park,D. H. Kim:
  The effect of moisture on the degradation mechanism of multi-crystalline silicon photovoltaic module.1823-1827

Volume 53, Number 12, December 2013

Research Papers

• 
  Takuya Naoe,Tamao Ikeuchi,Chie Moritni,Hirohiko Endoh,Kohichi Yokoyama:
  Local damage free Si substrate ultra thinning for backside emission spectral analysis using OBPF for LSI failure mode detection.1829-1840
• 
  Zahir Ouennoughi,C. Strenger,F. Bourouba,V. Haeublein,Heiner Ryssel,Lothar Frey:
  Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC.1841-1847
• 
  Xueqian Zhong,Li Zhang,Gang Xie,Qing Guo,Tao Wang,Kuang Sheng:
  High temperature physical modeling and verification of a novel 4H-SiC lateral JFET structure.1848-1856
• 
  R. Foissac,S. Blonkowski,M. Kogelschatz,P. Delcroix,M. Gros-Jean,F. Bassani:
  Impact of bilayer character on High K gate stack dielectrics breakdown obtained by conductive atomic force microscopy.1857-1862
• 
  Hei Wong,B. L. Yang,Shurong Dong:
  Thermal and voltage instabilities of hafnium oxide films prepared by sputtering technique.1863-1867
• 
  Izumi Hirano,Yasushi Nakasaki,Shigeto Fukatsu,Masakazu Goto,Koji Nagatomo,Seiji Inumiya,Katsuyuki Sekine,Yuichiro Mitani,Kikuo Yamabe:
  Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing.1868-1874
• 
  Dong-Suk Han,Jae-Hyung Park,Yu-Jin Kang,Jong-Wan Park:
  Effects of zirconium doping on the characteristics of tin oxide thin film transistors.1875-1878
• 
  Runze Zhan,Chengyuan Dong,Po-Tsun Liu,Han-Ping D. Shieh:
  Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors.1879-1885
• 
  Lingfeng Mao:
  Quantum size impacts on the threshold voltage in nanocrystalline silicon thin film transistors.1886-1890
• 
  Jie Chen,Zhengwei Du:
  Understanding and modeling of internal transient latch-up susceptibility in CMOS inverters due to microwave pulses.1891-1896
• 
  Hsien-Chin Chiu,Chao-Hung Chen,Hsuan-Ling Kao,Feng-Tso Chien,Ping-Kuo Weng,Yan-Tang Gau,Hao-Wei Chuang:
  Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis.1897-1900
• 
  Murat Soylu,Omar A. Al-Hartomy,Said A. Farha Al Said,Ahmed A. Al-Ghamdi,I. S. Yahia,Fahrettin Yakuphanoglu:
  Controlling of conduction mechanism and electronic parameters of silicon-metal junction by mixed Methylene Blue/2′-7′-dichlorofluorescein.1901-1906
• 
  D. A. van den Ende,Roel H. L. Kusters,Maarten Cauwe,A. van der Waal,Jeroen van den Brand:
  Large area flexible lighting foils using distributed bare LED dies on polyester substrates.1907-1915
• 
  Han-Kuei Fu,Yi Ping Peng,Shang Pin Ying,Tzung-Te Chen,Chien-Ping Wang,Chiu-Ling Chen,Pei-Ting Chou:
  The evaluation for the chromatic characteristics of LED module under electrical and thermal coupling analysis.1916-1921
• 
  Nochang Park,Changwoon Han,Donghwan Kim:
  Effect of moisture condensation on long-term reliability of crystalline silicon photovoltaic modules.1922-1926
• 
  Hwen-Fen Hong,Tsung-Shiew Huang,Mei-Hui Chiang,Zun-Hao Shih:
  Degradation mechanism of concentrator solar receivers without protection layer.1927-1932
• 
  Robert Skuriat,Jianfeng Li,Pearl A. Agyakwa,Nevil Mattey,Paul Evans,C. Mark Johnson:
  Degradation of thermal interface materials for high-temperature power electronics applications.1933-1942
• 
  Nay Lin,Jianmin Miao,Pradeep Dixit:
  Void formation over limiting current density and impurity analysis of TSV fabricated by constant-current pulse-reverse modulation.1943-1953
• 
  Tooraj Yousefi,Seyyed Arash Mousavi,B. Farahbakhsh,M. Z. Saghir:
  Experimental investigation on the performance of CPU coolers: Effect of heat pipe inclination angle and the use of nanofluids.1954-1961
• 
  Zhiwei Li,Hua Li,Fuchang Lin,Yaohong Chen,De Liu,Bowen Wang,Haoyuan Li,Qin Zhang:
  Lifetime investigation and prediction of metallized polypropylene film capacitors.1962-1967
• 
  Hongjin Jiang,Kyoung-sik Moon,C. P. Wong:
  Recent advances of nanolead-free solder material for low processing temperature interconnect applications.1968-1978
• 
  Ted Sun,Ayhan A. Mutlu,Mahmudur Rahman:
  A new statistical methodology predicting chip failure probability considering electromigration.1979-1986
• 
  Bladimir Ramos-Alvarado,David Brown,Xiuping Chen,Bo Feng,G. P. Peterson:
  On the assessment of voids in the thermal interface material on the thermal performance of a silicon chip package.1987-1995
• 
  W. C. Leong,Mohd Zulkifly Abdullah,C. Y. Khor:
  Optimization of flexible printed circuit board electronics in the flow environment using response surface methodology.1996-2004
• 
  Tomoya Daito,Hiroshi Nishikawa,Tadashi Takemoto,Takashi Matsunami:
  Explanation of impact load curve in ball impact test in relation to thermal aging.2005-2011
• 
  Chin-Hung Kuo,Hsin-Hui Hua,Ho-Yang Chan,Tsung-Hsun Yang,Kuen-Song Lin,Cheng-En Ho:
  Interfacial reaction and mechanical reliability of PTH solder joints with different solder/surface finish combinations.2012-2017
• 
  Tingbi Luo,Zhuo Chen,Anmin Hu,Ming Li,Peng Li:
  Study on low-Ag content Sn-Ag-Zn/Cu solder joints.2018-2029
• 
  Guanghua Wu,Bo Tao,Zhouping Yin:
  Study on the shear strength degradation of ACA joints induced by different hygrothermal aging conditions.2030-2035
• 
  Jeong-Won Yoon,Min-Kwan Ko,Bo-In Noh,Seung-Boo Jung:
  Joint reliability evaluation of thermo-compression bonded FPCB/RPCB joints under high temperature storage test.2036-2042
• 
  Yusuf Cinar,Jinwoo Jang,Gunhee Jang,Seonsik Kim,Jaeseok Jang:
  Effect of solder pads on the fatigue life of FBGA memory modules under harmonic excitation by using a global-local modeling technique.2043-2051
• 
  Nishad Patil,Diganta Das,Estelle Scanff,Michael G. Pecht:
  Long term storage reliability of antifuse field programmable gate arrays.2052-2056
• 
  I-Chyn Wey,Yi-Jung Lan,Chien-Chang Peng:
  Reliable ultra-low-voltage low-power probabilistic-based noise-tolerant latch design.2057-2069
• 
  Eduardas Bareisa,Vacius Jusas,Kestutis Motiejunas,Rimantas Seinauskas:
  Delay fault testing using partial multiple scan chains.2070-2077

Book Reviews

• 
  Vallayil N. A. Naikan:
  Life Cycle Reliability Engineering, Guangbin Yang. John Wiley & Sons, Inc. (2007), p. 517. ISBN: 978-0-471-71529-0.2078
• 
  Vojkan Davidovic:
  Nanoelectronic Devices, B.-G. Park, S.W. Hwang, Y.J. Park. Pan Stanford Publishing Pte. Ltd., Singapore (2012). 406 p., ISBN: 978-981-4364-00-3.2079