Microelectronics Reliability, Volume 52

Volume 52, Number 1, January 2012

Special Section "2011 Reliability of Compound Semiconductors (ROCS) Workshop"

• 
  Peter Ersland,Roberto Menozzi:
  Editorial.1
• 
  Charles S. Whitman:
  Impact of ambient temperature set point deviation on Arrhenius estimates.2-8
• 
  Michael Ferrara,Michael Stephens,Leslie Marchut,Chris Yang,Ventony Fryar,Preston Scott:
  Analysis of in situ monitored thermal cycling benefits for wireless packaging early reliability evaluation.9-15
• 
  William J. Roesch,Dorothy June M. Hamada,David Littleton:
  Introducing a scale structure to correlate quality and reliability.16-22
• 
  E. A. Douglas,C. Y. Chang,B. P. Gila,M. R. Holzworth,Kevin S. Jones,Lu Liu,Jinhyung Kim,Soohwan Jang,Glen David Via,Fan Ren,Stephen J. Pearton:
  Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors.23-28
• 
  Milan Tapajna,Nicole Killat,Uttiya Chowdhury,Jose L. Jimenez,Martin Kuball:
  The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability.29-32
• 
  Jungwoo Joh,Jesús A. del Alamo:
  Impact of gate placement on RF power degradation in GaN high electron mobility transistors.33-38

Regular Papers

• 
  Tibor Grasser:
  Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities.39-70
• 
  Ugo Lafont,Henk W. van Zeijl,Sybrand van der Zwaag:
  Increasing the reliability of solid state lighting systems via self-healing approaches: A review.71-89
• 
  Dhafer Abdulameer Shnawah,Mohd Faizul Mohd Sabri,Irfan Anjum Badruddin:
  A review on thermal cycling and drop impact reliability of SAC solder joint in portable electronic products.90-99
• 
  Jia-Liang Le:
  A finite weakest-link model of lifetime distribution of high-k gate dielectrics under unipolar AC voltage stress.100-106
• 
  Robert Mroczynski,Romuald B. Beck:
  Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO₂) layers for non-volatile semiconductor memory (NVSM) applications.107-111
• 
  P. S. Das,Abhijit Biswas:
  Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlO_x on n-GaAs substrates.112-117
• 
  Valeria Kilchytska,Joaquín Alvarado,S. Put,Nadine Collaert,Eddy Simoen,Cor Claeys,Otilia Militaru,Guy Berger,Denis Flandre:
  High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs.118-123
• 
  Antoine D. Touboul,L. Foro,Frederic Wrobel,Frédéric Saigné:
  On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum.124-129
• 
  Bingxu Ning,Zhengxuan Zhang,Zhangli Liu,Zhiyuan Hu,Ming Chen,Dawei Bi,Shichang Zou:
  Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology.130-136
• 
  Jaehyun Cho,Sungwook Jung,Kyungsoo Jang,Hyungsik Park,Jongkyu Heo,Wonbaek Lee,DaeYoung Gong,Seungman Park,Hyungwook Choi,Hanwook Jung,Byoungdeog Choi,Junsin Yi:
  The effect of gate overlap lightly doped drains on low temperature poly-Si thin film transistors.137-140
• 
  Etienne Herth,H. Desré,Emmanuelle Algré,Christiane Legrand,Tuami Lasri:
  Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications.141-146
• 
  Chao-Hung Chen,Hsien-Chin Chiu,Chih-Wei Yang,Jeffrey S. Fu,Feng-Tso Chien:
  Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer.147-150
• 
  Priyanka Malik,R. S. Gupta,Rishu Chaujar,Mridula Gupta:
  AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications.151-158
• 
  Yong Jiang,Li-Lung Lai,Jian-Jun Zhou:
  Single-bit failure analysis at a nanometer resolution by conductive atomic force microscopy.159-164
• 
  Toni T. Mattila,Jue Li,Jorma K. Kivilahti:
  On the effects of temperature on the drop reliability of electronic component boards.165-179
• 
  Jenn-Ming Song,Yao-Ren Liu,Yi-Shao Lai,Ying-Ta Chiu,Ning-Cheng Lee:
  Influence of trace alloying elements on the ball impact test reliability of SnAgCu solder joints.180-189
• 
  Juha Karppinen,Jue Li,J. Pakarinen,Toni T. Mattila,Mervi Paulasto-Kröckel:
  Shock impact reliability characterization of a handheld product in accelerated tests and use environment.190-198
• 
  Takeshi Ito,Isamu Taguchi,Masayasu Soga,Masahiko Mitsuhashi,Toshiro Shinohara,Toshinori Ogashiwa,Takashi Nishimori,Nobuyuki Akiyama:
  Thermal stability of back side metallization multilayer for power device application.199-205
• 
  Mingzhi Ni,Ming Li,Dali Mao:
  Adhesion improvement of Epoxy Molding Compound - Pd Preplated leadframe interface using shaped nickel layers.206-211
• 
  Sébastien Jacques,A. Caldeira,N. Batut,A. Schellmanns,R. Leroy,L. Gonthier:
  Lifetime prediction modeling of non-insulated TO-220AB packages with lead-based solder joints during power cycling.212-216
• 
  Chang-Kyu Chung,Jae-Han Kim,Jong-Won Lee,Kyoung-Won Seo,Kyung-Wook Paik:
  Enhancement of electrical stability of anisotropic conductive film (ACF) interconnections with viscosity-controlled and high T_g ACFs in fine-pitch chip-on-glass applications.217-224
• 
  Kyoung-Lim Suk,Ho-Young Son,Chang-Kyu Chung,Joong Do Kim,Jin-Woo Lee,Kyung-Wook Paik:
  Flexible Chip-on-Flex (COF) and embedded Chip-in-Flex (CIF) packages by applying wafer level package (WLP) technology using anisotropic conductive films (ACFs).225-234
• 
  Olivér Krammer,László Milán Molnár,László Jakab,András Szabó:
  Modelling the effect of uneven PWB surface on stencil bending during stencil printing process.235-240
• 
  C. Y. Khor,Mohd Zulkifly Abdullah,H. J. Tony Tan,W. C. Leong,D. Ramdan:
  Investigation of the fluid/structure interaction phenomenon in IC packaging.241-252
• 
  Owen Thomas,Chris Hunt,Martin Wickham:
  Finite difference modelling of moisture diffusion in printed circuit boards with ground planes.253-261
• 
  W. L. Lu,Y. M. Hwang:
  Analysis of a vibration-induced micro-generator with a helical micro-spring and induction coil.262-270
• 
  R. Ardito,Attilio Frangi,Alberto Corigliano,Biagio De Masi,G. Cazzaniga:
  The effect of nano-scale interaction forces on the premature pull-in of real-life Micro-Electro-Mechanical Systems.271-281
• 
  Franco Fiori:
  On the use of high-impedance power supplies to reduce the substrate switching noise in system-on-chips.282-288
• 
  Marta Bagatin,Simone Gerardin,Alessandro Paccagnella,Carla Andreani,Giuseppe Gorini,Christopher D. Frost:
  Temperature dependence of neutron-induced soft errors in SRAMs.289-293
• 
  Pawel Salek,Lidia Lukasiak,Andrzej Jakubowski:
  New threshold voltage definition for undoped symmetrical DG MOSFET.294-295
• 
  S. Tarasovs,Janis Andersons:
  Competition between the buckling-driven delamination and wrinkling in compressed thin coatings.296-299
• 
  Vojkan Davidovic:
  Reliability Physics and Engineering: Time-to-Failure Modeling, J.W. McPherson. Springer (2010). 318 pp., ISBN: 978-1-4419-6347-5.300

Volume 52, Number 2, February 2012

Special Section "Low Temperature Processing for Microelectronics and Microsystems Packaging"

• 
  Tadatomo Suga,Jenn-Ming Song,Yi-Shao Lai:
  Guest Editorial - Low Temperature Processing for Microelectronics and Microsystems Packaging.301
• 
  Cheng-Ta Ko,Kuan-Neng Chen:
  Low temperature bonding technology for 3D integration.302-311
• 
  Ya-Sheng Tang,Yao-Jen Chang,Kuan-Neng Chen:
  Wafer-level Cu-Cu bonding technology.312-320
• 
  Chuan Seng Tan,Dau Fatt Lim,Xiao Fang Ang,Jun Wei,K. C. Leong:
  Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement.321-324
• 
  Ki Yeol Byun,Cindy Colinge:
  Overview of low temperature hydrophilic Ge to Si direct bonding for heterogeneous integration.325-330
• 
  H. Moriceau,F. Rieutord,F. Fournel,Léa Di Cioccio,C. Moulet,Luc Libralesso,Pierric Gueguen,Rachid Taibi,C. Deguet:
  Low temperature direct bonding: An attractive technique for heterostructures build-up.331-341
• 
  Ryuichi Kondou,Chenxi Wang,Akitsu Shigetou,Tadatomo Suga:
  Nanoadhesion layer for enhanced Si-Si and Si-SiN wafer bonding.342-346
• 
  Chenxi Wang,Tadatomo Suga:
  Investigation of fluorine containing plasma activation for room-temperature bonding of Si-based materials.347-351
• 
  S. L. Lin,W. C. Huang,C. T. Ko,Kuan-Neng Chen:
  BCB-to-oxide bonding technology for 3D integration.352-355
• 
  Hermann Oppermann,Lothar Dietrich:
  Nanoporous gold bumps for low temperature bonding.356-360
• 
  Matiar M. R. Howlader,Thomas E. Doyle:
  Low temperature nanointegration for emerging biomedical applications.361-374
• 
  K. Suganuma,S. Sakamoto,N. Kagami,D. Wakuda,K. S. Kim,M. Nogi:
  Low-temperature low-pressure die attach with hybrid silver particle paste.375-380
• 
  Y. J. Chen,C. C. Chang,H. Y. Lin,S. C. Hsu,C. Y. Liu:
  Fabrication of vertical thin-GaN light-emitting diode by low-temperature Cu/Sn/Ag wafer bonding.381-384
• 
  Chi-Pu Lin,Chih-Ming Chen:
  Solid-state interfacial reactions at the solder joints employing Au/Pd/Ni and Au/Ni as the surface finish metallizations.385-390
• 
  Yu-Feng Liu,Weng-Sing Hwang,Yen-Fang Pai,Ming-Hsu Tsai:
  Low temperature fabricated conductive lines on flexible substrate by inkjet printing.391-397
• 
  Yih-Ming Liu,Nen-Wen Pu,Wen-Ding Chen,Kun-Hong Lin,Yuh Sung,Ming-Der Ger,Ching-Liang Chang,Te-Liand Tseng:
  Low temperature fabrication of Ni-P metallic patterns on ITO substrates utilizing inkjet printing.398-404
• 
  Aminul Islam,Mohd. Hasan:
  A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell.405-411
• 
  W. Heo,Nae-Eung Lee:
  Effect of additive N₂ and Ar gases on surface smoothening and fracture strength of Si wafers during high-speed chemical dry thinning.412-417
• 
  R. K. Mamedov,M. A. Yeganeh:
  Current transport and formation of energy structures in narrow Au/n-GaAs Schottky diodes.418-424
• 
  Feng-Renn Juang,Yean-Kuen Fang,Hung-Yu Chiu:
  Dependence of the Au/SnO_x/n-LTPS/glass thin film MOS Schottky diode CO gas sensing performances on operating temperature.425-429
• 
  Ákos Nemcsics,Andrea Stemmann,Jeno Takács:
  To the understanding of the formation of the III-V based droplet epitxial nanorings.430-433
• 
  Zhihua Dong,Jinyan Wang,Cheng P. Wen,Shenghou Liu,Rumin Gong,Min Yu,Yilong Hao,Fujun Xu,Bo Shen,Yangyuan Wang:
  High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure.434-438
• 
  Sachin Kumar,Nikhil M. Vichare,Eli Dolev,Michael G. Pecht:
  A health indicator method for degradation detection of electronic products.439-445
• 
  Feifei He,Cher Ming Tan:
  Electromigration reliability of interconnections in RF low noise amplifier circuit.446-454
• 
  J. W. Jang,L. Li,P. Bowles,R. Bonda,D. R. Frear:
  High-lead flip chip bump cracking on the thin organic substrate in a module package.455-460

Volume 52, Number 3, March 2012

Editorial

• 
  Vitezslav Benda:
  Progress in power semiconductor devices.461-462

Special Section Papers

• 
  Patrik Pribytny,Daniel Donoval,Ales Chvála,Juraj Marek,Marian Molnar:
  Electro-thermal analysis and optimization of edge termination of power diode supported by 2D numerical modeling and simulation.463-468
• 
  Jirí Hájek,Václav Papez,B. Kojecký:
  Investigation of flicker noise in silicon diodes under reverse bias.469-474
• 
  Josef Lutz,Roman Baburske:
  Dynamic avalanche in bipolar power devices.475-481
• 
  Nishad Patil,Diganta Das,Michael G. Pecht:
  A prognostic approach for non-punch through and field stop IGBTs.482-488
• 
  Emmanuel Marcault,Marie Breil,A. Bourennane,Patrick Tounsi,Jean-Marie Dorkel:
  Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations.489-496
• 
  B. T. Donnellan,G. J. Roberts,P. A. Mawby,A. T. Bryant:
  Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives.497-502
• 
  Ignasi Cortés,Gaëtan Toulon,Frederic Morancho,E. Hugonnard-Bruyere,B. Villard,W. J. Toren:
  Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors.503-508
• 
  Ralf Siemieniec,Gerhard Nöbauer,Daniel Domes:
  Stability and performance analysis of a SiC-based cascode switch and an alternative solution.509-518

Regular Papers

• 
  Renan Trevisoli Doria,João Antonio Martino,Eddy Simoen,Cor Claeys,Marcelo Antonio Pavanello:
  An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices.519-524
• 
  Pavel Poliakov,Pieter Blomme,Alessandro Vaglio Pret,Miguel Corbalan Miranda,Roel Gronheid,Diederik Verkest,Jan Van Houdt,Wim Dehaene:
  Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories.525-529
• 
  Arief Suriadi Budiman,H.-A.-S. Shin,B.-J. Kim,S.-H. Hwang,Ho-Young Son,Min-Suk Suh,Q.-H. Chung,K.-Y. Byun,Nobumichi Tamura,Martin Kunz,Young-Chang Joo:
  Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits.530-533
• 
  E. J. Cheng,Yu-Lin Shen:
  Thermal expansion behavior of through-silicon-via structures in three-dimensional microelectronic packaging.534-540
• 
  Dao-Long Chen,Ping-Feng Yang,Yi-Shao Lai:
  A review of three-dimensional viscoelastic models with an application to viscoelasticity characterization using nanoindentation.541-558
• 
  Liang Zhang,Cheng-wen He,Yong-huan Guo,Ji-guang Han,Yong-wei Zhang,Xu-yan Wang:
  Development of SnAg-based lead free solders in electronics packaging.559-578
• 
  Fangjie Cheng,Feng Gao,Yan Wang,Yunlong Wu,Zhaolong Ma,Junxiang Yang:
  Sn addition on the tensile properties of high temperature Zn-4Al-3Mg solder alloys.579-584
• 
  Tingbi Luo,Anmin Hu,Jing Hu,Ming Li,Dali Mao:
  Microstructure and mechanical properties of Sn-Zn-Bi-Cr lead-free solder.585-588
• 
  Daquan Yu:
  Development of reliable low temperature wafer level hermetic bonding using composite seal joint.589-594
• 
  Jiwon Kim,Byung-seung Yim,Jongmin Kim,Jooheon Kim:
  The effects of functionalized graphene nanosheets on the thermal and mechanical properties of epoxy composites for anisotropic conductive adhesives (ACAs).595-602
• 
  Janusz M. Smulko,Kazimierz Józwiak,Marek Olesz:
  Quality testing methods of foil-based capacitors.603-609

Volume 52, Number 4, April 2012

Editorial

• 
  Hei Wong:
  Advances in non-volatile memory technology.611-612

Special Section Papers

• 
  Takayuki Kawahara,Kenchi Ito,Riichiro Takemura,Hideo Ohno:
  Spin-transfer torque RAM technology: Review and prospect.613-627
• 
  Alexander Makarov,Viktor Sverdlov,Siegfried Selberherr:
  Emerging memory technologies: Trends, challenges, and modeling methods.628-634
• 
  Jer-Chyi Wang,Chih-Ting Lin,Pai-Chi Chou,Chao-Sung Lai:
  Gadolinium-based metal oxide for nonvolatile memory applications.635-641
• 
  Elena Atanassova,Albena Paskaleva,Dencho Spassov:
  Doped Ta₂O₅ and mixed HfO₂-Ta₂O₅ films for dynamic memories applications at the nanoscale.642-650
• 
  HongYu Yu,Yuan Sun,Navab Singh,Guo-Qiang Lo,Dim-Lee Kwong:
  Perspective of flash memory realized on vertical Si nanowires.651-661
• 
  Jong-Ho Lee,Sang-Goo Jung:
  NAND flash memory technology utilizing fringing electric field.662-669
• 
  Oi-Ying Wong,Hei Wong,Wing-Shan Tam,Ted Chi-Wah Kok:
  A comparative study of charge pumping circuits for flash memory applications.670-687
• 
  Chunmeng Dou,Kuniyuki Kakushima,Parhat Ahmet,Kazuo Tsutsui,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,Takeo Hattori,Hiroshi Iwai:
  Resistive switching behavior of a CeO₂ based ReRAM cell incorporated with Si buffer layer.688-691

Regular Papers

• 
  Shengdong Hu,Jun Luo,Kaizhou Tan,Ling Zhang,Zhaoji Li,Bo Zhang,Jianlin Zhou,Ping Gan,Guolin Qin,Zhengyuan Zhang:
  Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate.692-697
• 
  Chien-Ping Wang,Tzung-Te Chen,Han-Kuei Fu,Tien-Li Chang,Pei-Ting Chou,Mu-Tao Chu:
  Analysis of thermal characteristics and mechanism of degradation of flip-chip high power LEDs.698-703
• 
  Wenjian Yu,Qingqing Zhang,Zuochang Ye,Zuying Luo:
  Efficient statistical capacitance extraction of nanometer interconnects considering the on-chip line edge roughness.704-710
• 
  R. F. Szeloch,Pawel Janus,Jaroslaw Serafinczuk,P. M. Szecówka,Grzegorz Józwiak:
  Characterization of fatigued Al lines by means of SThM and XRD: Analysis using fast Fourier transform.711-717
• 
  Se Young Yang,Woon-Seong Kwon,Soon-Bok Lee:
  Chip warpage model for reliability prediction of delamination failures.718-724
• 
  Chien-Pan Liu,Yen-Fu Liu,Chang-Hung Li,Hung-Chieh Cheng,Yi-Chun Kung,Jeng-Yu Lin:
  A novel decapsulation technique for failure analysis of epoxy molded IC packages with Cu wire bonds.725-734
• 
  Yusuf Cinar,Jinwoo Jang,Gunhee Jang,Seonsik Kim,Jaeseok Jang,Jinkyu Chang,Yonghyun Jun:
  Failure mechanism of FBGA solder joints in memory module subjected to harmonic excitation.735-743
• 
  W. C. Leong,Mohd Zulkifly Abdullah,C. Y. Khor:
  Application of flexible printed circuit board (FPCB) in personal computer motherboards: Focusing on mechanical performance.744-756
• 
  Yongguang Xiao,Minghua Tang,Jiancheng Li,Bo Jiang,John He:
  The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors.757-760

Volume 52, Number 5, May 2012

Editorial

• 
  Cheng-Yi Liu,S. W. Ricky Lee,Moo Whan Shin,Yi-Shao Lai:
  Reliability of high-power LED packaging and assembly.761

Special Issue Papers

• 
  Moon-Hwan Chang,Diganta Das,Prabhakar V. Varde,Michael G. Pecht:
  Light emitting diodes reliability review.762-782
• 
  S. Tarashioon,Alessandro Baiano,Henk W. van Zeijl,C. Guo,S. W. Koh,W. D. van Driel,G. Q. Zhang:
  An approach to "Design for Reliability" in solid state lighting systems at high temperatures.783-793
• 
  Yen-Fu Su,Shin-Yueh Yang,Tuan-Yu Hung,Chang-Chun Lee,Kuo-Ning Chiang:
  Light degradation test and design of thermal performance for high-power light-emitting diodes.794-803
• 
  Matteo Meneghini,Matteo Dal Lago,Nicola Trivellin,Giovanna Mura,Massimo Vanzi,Gaudenzio Meneghesso,Enrico Zanoni:
  Chip and package-related degradation of high power white LEDs.804-812
• 
  Jau-Sheng Wang,Chun-Chin Tsai,Jyun-Sian Liou,Wei-Chih Cheng,Shun-Yuan Huang,Gi-Hung Chang,Wood-Hi Cheng:
  Mean-time-to-failure evaluations of encapsulation materials for LED package in accelerated thermal tests.813-817
• 
  Ray-Hua Horng,Re-Ching Lin,Yi-Chen Chiang,Bing-Han Chuang,Hung-Lieh Hu,Chen-Peng Hsu:
  Failure modes and effects analysis for high-power GaN-based light-emitting diodes package technology.818-821
• 
  C. H. Chen,Ming-Yi Tsai:
  Strength determination of high-power LED die using point-load and line-load tests.822-829
• 
  Jong Hwa Choi,Moo Whan Shin:
  Thermal investigation of LED lighting module.830-835
• 
  Minseok Ha,Samuel Graham:
  Development of a thermal resistance model for chip-on-board packaging of high power LED arrays.836-844
• 
  Ming-Yi Tsai,C. H. Chen,C. S. Kang:
  Thermal measurements and analyses of low-cost high-power LED packages and their modules.845-854
• 
  C. T. Yang,W. C. Liu,C. Y. Liu:
  Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package.855-860
• 
  Bo-Hung Liou,Chih-Ming Chen,Ray-Hua Horng,Yi-Chen Chiang,Dong-Sing Wuu:
  Improvement of thermal management of high-power GaN-based light-emitting diodes.861-865
• 
  Han-Kuei Fu,Chin-Wei Lin,Tzung-Te Chen,Chiu-Ling Chen,Pei-Ting Chou,Chien-Jen Sun:
  Investigation of dynamic color deviation mechanisms of high power light-emitting diode.866-871
• 
  Te-yuan Chung,Jian-Hong Jhang,Jing-Sian Chen,Yi-Chien Lo,Gwo-Herng Ho,Mount-Learn Wu,Ching-Cherng Sun:
  A study of large area die bonding materials and their corresponding mechanical and thermal properties.872-877
• 
  Ming-Te Lin,Shang-Ping Ying,Ming-Yao Lin,Kuang-Yu Tai,Jyh-Chen Chen:
  High power LED package with vertical structure.878-883
• 
  Ming-Jer Jeng,Kuo-Ling Chiang,Hsin-Yi Chang,Chia-Yi Yen,Cheng-Chen Lin,Yuan-Hsiao Chang,Mu-Jen Lai,Yu-Lin Lee,Liann-Be Chang:
  Heat sink performances of GaN/InGaN flip-chip light-emitting diodes fabricated on silicon and AlN submounts.884-888
• 
  Yi-Chien Lo,Kuan-Teng Huang,Xuan-Hao Lee,Ching-Cherng Sun:
  Optical design of a Butterfly lens for a street light based on a double-cluster LED.889-893
• 
  Hsun-Ching Hsu,Chun-Jung Wang,Hong Ru Lin,Pin Han:
  Optimized semi-sphere lens design for high power LED package.894-899
• 
  Lei Chen,Cheng-I Chu,Ru-Shi Liu:
  Improvement of emission efficiency and color rendering of high-power LED by controlling size of phosphor particles and utilization of different phosphors.900-904
• 
  Hui Huang Cheng,De-Shau Huang,Ming-Tzer Lin:
  Heat dissipation design and analysis of high power LED array using the finite element method.905-911
• 
  Hung-Yu Chou,Cheng-Chien Chen,Tsung-Hsun Yang:
  Maintenance of stable light emission in high power LEDs.912-915
• 
  Jyh-Rong Lin,Tuen Yi Ng,Zhaoxin Wang,Shan Mei Wan,Kin Wai Wong,Ming Lu,Enboa Wu:
  Wafer-level LED-SiP based mobile flash module and characterization.916-921
• 
  Rong Zhang,S. W. Ricky Lee:
  Moldless encapsulation for LED wafer level packaging using integrated DRIE trenches.922-932
• 
  H. C. Chen,K. J. Chen,C. C. Lin,Chin-Hsin Wang,C. C. Yeh,H. H. Tsai,Min-Hsiung Shih,H. C. Kuo:
  Improvement of lumen efficiency in white light-emitting diodes with air-gap embedded package.933-936
• 
  Bong-Min Song,Bongtae Han,Avram Bar-Cohen,Mehmet Arik,Rajdeep Sharma,Stan Weaver:
  Life prediction of LED-based recess downlight cooled by synthetic jet.937-948
• 
  Y. C. Yang,Jinn-Kong Sheu,Ming-Lun Lee,Che-Kang Hsu,Shang-Ju Tu,Shu-Yen Liu,C. C. Yang,Feng-Wen Huang:
  Vertical InGaN light-emitting diodes with Ag paste as bonding layer.949-951

Volume 52, Number 6, June 2012

Research Papers

• 
  Michael G. Pecht:
  Nvidia's GPU failures: A case for prognostics and health management.953-957
• 
  N. Lakhdar,Fayçal Djeffal:
  New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime.958-963
• 
  Gang Xie,Edward Xu,Bo Zhang,Wai Tung Ng:
  Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF compatible process.964-968
• 
  Che-Kai Lin,Hsien-Chin Chiu,Chao-Wei Lin,Hsuan-Ling Kao,Feng-Tso Chien:
  Investigation on the thermal behavior of 0.15 μm gate-length In_0.4Al_0.6As/In_0.4Ga_0.6As MHEMT.969-973
• 
  Vandana Kumari,Manoj Saxena,R. S. Gupta,Mridula Gupta:
  Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range.974-983
• 
  Srabanti Pandit,Binit Syamal,Chandan Kumar Sarkar:
  Modeling of noise for p-channel DG-FinFETs.984-988
• 
  Rajni Gautam,Manoj Saxena,R. S. Gupta,Mridula Gupta:
  Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis.989-994
• 
  Yung-Yu Chen,Chih-Ren Hsieh,Fang-Yu Chiu:
  Stress immunity enhancement of the SiN uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor by channel fluorine implantation.995-998
• 
  Hsuan-Ling Kao,Chih-Sheng Yeh,Meng-Ting Chen,Hsien-Chin Chiu,Li-Chun Chang:
  Characterization and reliability of nMOSFETs on flexible substrates under mechanical strain.999-1004
• 
  Songul Duman,K. Ejderha,Ö. Yigit,Abdulmecit Türüt:
  Determination of contact parameters of Ni/n-GaP Schottky contacts.1005-1011
• 
  Guido Notermans,Sergey Bychikhin,Dionyz Pogany,David Johnsson,Dejan M. Maksimovic:
  HMM-TLP correlation for system-efficient ESD design.1012-1019
• 
  Chih-Ting Yeh,Ming-Dou Ker:
  Study of intrinsic characteristics of ESD protection diodes for high-speed I/O applications.1020-1030
• 
  Ales Chvála,Daniel Donoval,P. Beno,Juraj Marek,Patrik Pribytny,Marian Molnar:
  Analysis of reliability and optimization of ESD protection devices supported by modeling and simulation.1031-1038
• 
  M. Mamatrishat,T. Kubota,T. Seki,Kuniyuki Kakushima,Parhat Ahmet,Kazuo Tsutsui,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,Takeo Hattori,Hiroshi Iwai:
  Oxide and interface trap densities estimation in ultrathin W/La₂O₃/Si MOS capacitors.1039-1042
• 
  Jibin Fan,Hongxia Liu,Qianwei Kuang,Bo Gao,Fei Ma,Yue Hao:
  Physical properties and electrical characteristics of H₂O-based and O₃-based HfO₂ films deposited by ALD.1043-1049
• 
  A. A. Dakhel:
  W doping effect on the dielectric properties of amorphous Ga₂O₃ films grown on Si substrate for low-k applications.1050-1054
• 
  Yong-Shiuan Tsair,Yean-Kuen Fang,Feng-Renn Juang,Yu-Hsiung Wang,Wen-Ting Chu,Yung-Tao Lin,Luan Tran:
  A novel method to improve cell endurance window in source-side injection split gate flash memory.1055-1059
• 
  Cristian Zambelli,Andrea Chimenton,Piero Olivo:
  Modeling of SET seasoning effects in Phase Change Memory arrays.1060-1064
• 
  Shyue-Kung Lu,Tin-Wei Chang,Han-Yu Hsu:
  Yield enhancement techniques for 3-dimensional random access memories.1065-1070
• 
  J. C. Hsieh,H. J. Huang,S. C. Shen:
  Experimental study of microrectangular groove structure covered with multi mesh layers on performance of flat plate heat pipe for LED lighting module.1071-1079
• 
  Bing-Liang Chen,Pao-Cheng Huang,Ling-Sheng Jang,Ming-Kun Chen:
  Electrical failure analysis of peristaltic micropumps fabricated with PZT actuators.1080-1085
• 
  Wenbin Wang,Shuxin Luo,Michael G. Pecht:
  Economic design of the mean prognostic distance for canary-equipped electronic systems.1086-1091
• 
  Peisheng Liu,Liangyu Tong,Jinlan Wang,Lei Shi,Hao Tang:
  Challenges and developments of copper wire bonding technology.1092-1098
• 
  Hassen Medjahed,Paul-Etienne Vidal,Bertrand Nogarede:
  Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes.1099-1104
• 
  Fuliang Wang,Yun Chen,Lei Han:
  Experiment study of dynamic looping process for thermosonic wire bonding.1105-1111
• 
  Hongtao Chen,Jing Han,Jue Li,Mingyu Li:
  Inhomogeneous deformation and microstructure evolution of Sn-Ag-based solder interconnects during thermal cycling and shear testing.1112-1120
• 
  Peter Borgesen,Liang Yin,Pericles Kondos:
  Acceleration of the growth of Cu₃Sn voids in solder joints.1121-1127
• 
  Jin Hyuk Gang,Dawn An,Jin Won Joo,Joo Ho Choi:
  Uncertainty analysis of solder alloy material parameters estimation based on model calibration method.1128-1137
• 
  Tamás Hurtony,Attila Bonyár,Péter Gordon,Gábor Harsányi:
  Investigation of intermetallic compounds (IMCs) in electrochemically stripped solder joints with SEM.1138-1142
• 
  Chun-Sean Lau,Mohd Zulkifly Abdullah,F. Che Ani:
  Optimization modeling of the cooling stage of reflow soldering process for ball grid array package using the gray-based Taguchi method.1143-1152
• 
  Xu Zeng,Hong-Qi Sun,Yan-Feng He,Xin-Ping Qu:
  Reflow discoloration formation on pure tin (Sn) surface finish.1153-1156
• 
  Wenjing Zhang,Wei Luo,Anmin Hu,Ming Li:
  Adhesion improvement of Cu-based substrate and epoxy molding compound interface by hierarchical structure preparation.1157-1164
• 
  Byung-seung Yim,Yumi Kwon,Seung Hoon Oh,Jooheon Kim,Yong-Eui Shin,Seong Hyuk Lee,Jongmin Kim:
  Characteristics of solderable electrically conductive adhesives (ECAs) for electronic packaging.1165-1173
• 
  Kyung-Woon Jang,Jin-Hyoung Park,Soon-Bok Lee,Kyung-Wook Paik:
  A study on thermal cycling (T/C) reliability of anisotropic conductive film (ACF) flip chip assembly for thin chip-on-board (COB) packages.1174-1181
• 
  Kyoung-Lim Suk,Kyosung Choo,Sung Jin Kim,Jong-Soo Kim,Kyung-Wook Paik:
  Studies on various chip-on-film (COF) packages using ultra fine pitch two-metal layer flexible printed circuits (two-metal layer FPCs).1182-1188
• 
  Fei Su,Ronghai Mao,Ji Xiong,Kun Zhou,Zheng Zhang,Jiang Shao,Cunyi Xie:
  On thermo-mechanical reliability of plated-through-hole (PTH).1189-1196
• 
  Farshad Firouzi,Ali Azarpeyvand,Mostafa E. Salehi,Sied Mehdi Fakhraie:
  Adaptive fault-tolerant DVFS with dynamic online AVF prediction.1197-1208
• 
  Haiqing Nan,Ken Choi:
  Low cost and highly reliable hardened latch design for nanoscale CMOS technology.1209-1214
• 
  Hossein Asadi,Mehdi Baradaran Tahoori,Mahdi Fazeli,Seyed Ghassem Miremadi:
  Efficient algorithms to accurately compute derating factors of digital circuits.1215-1226
• 
  Jianjun Chen,Shuming Chen,Bin Liang,Biwei Liu,Fanyu Liu:
  Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism.1227-1232
• 
  Farouk Smith:
  Single event upset mitigation by means of a sequential circuit state freeze.1233-1240
• 
  Lei Li,Jianhao Hu:
  Fault model for on-chip communication and joint equalization and special spacing rules for on-chip bus design.1241-1246
• 
  Aminul Islam,Mohd. Hasan:
  Variability aware low leakage reliable SRAM cell design technique.1247-1252

Volume 52, Number 7, July 2012

Editorial

• 
  Artur Wymyslowski:
  2011 EuroSimE international conference on thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems.1253-1254

Special Issue Papers

• 
  Rainer Dudek,Reinhard Pufall,Bettina Seiler,Bernd Michel:
  Studies on the reliability of power packages based on strength and fracture criteria.1255-1265
• 
  Reinhard Pufall,Michael Goroll,Joachim Mahler,Werner Kanert,M. Bouazza,Olaf Wittler,Rainer Dudek:
  Degradation of moulding compounds during highly accelerated stress tests - A simple approach to study adhesion by performing button shear tests.1266-1271
• 
  Heinz Pape,Dirk Schweitzer,Liu Chen,Rudolf Kutscherauer,Martin Walder:
  Development of a standard for transient measurement of junction-to-case thermal resistance.1272-1278
• 
  R. H. Poelma,H. Sadeghian,Sau Koh,G. Q. Zhang:
  Effects of single vacancy defect position on the stability of carbon nanotubes.1279-1284
• 
  O. Hölck,Jörg Bauer,Olaf Wittler,Bernd Michel,Bernhard Wunderle:
  Comparative characterization of chip to epoxy interfaces by molecular modeling and contact angle determination.1285-1290
• 
  Nancy Iwamoto:
  Developing the stress-strain curve to failure using mesoscale models parameterized from molecular models.1291-1299
• 
  E. R. Weltevreden,S. J. Tesarski,Artur Wymyslowski,Müge Erinc,Alexander W. J. Gielen:
  A multi-scale approach of the thermo-mechanical properties of silica-filled epoxies used in electronic packaging.1300-1305

Regular Papers

• 
  Guang Zeng,Stuart D. McDonald,Kazuhiro Nogita:
  Development of high-temperature solders: Review.1306-1322
• 
  Jaroslav Kovác,Alexander Satka,Ales Chvála,D. Donoval,Peter Kordos,Sylvain L. Delage:
  Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors.1323-1327
• 
  Yang-Hua Chang,Chun-Teng Huang:
  A collector current model for InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with non-ideal effects.1328-1331
• 
  Fu-Kwun Wang,Tao-Peng Chu:
  Lifetime predictions of LED-based light bars by accelerated degradation test.1332-1336
• 
  Yue Xu,Feng Yan,ZhiGuo Li,Fan Yang,Jianguang Chang,Yonggang Wang:
  Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells.1337-1341
• 
  Magali Estrada,Antonio Cerdeira,Benjamín Iñíguez:
  Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors.1342-1345
• 
  Myung Ju Kim,Duck-Kyun Choi:
  Effect of enhanced-mobility current path on the mobility of AOS TFT.1346-1349
• 
  M. Enver Aydin,F. Yakuphanoglu:
  Electrical characterization of inorganic-on-organic diode based InP and poly(3, 4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT: PSS).1350-1354
• 
  Murat Soylu,Fahrettin Yakuphanoglu,I. S. Yahia:
  Fabrication and electrical characteristics of Perylene-3, 4, 9, 10-tetracarboxylic dianhydride/p-GaAs diode structure.1355-1361
• 
  Sakir Aydogan,M. Saglam,Abdulmecit Türüt:
  Effect of temperature on the capacitance-frequency and conductance-voltage characteristics of polyaniline/p-Si/Al MIS device at high frequencies.1362-1366
• 
  Dehua Xiong,Hong Li,Jinshu Cheng:
  Surface and interface characterization of oxygen plasma activated anodic bonding of glass-ceramics to stainless steel.1367-1372
• 
  Kai Li,Wenyuan Chen,Weiping Zhang:
  Design, modeling and analysis of highly reliable capacitive microaccelerometer based on circular stepped-plate and small-area touch mode.1373-1381
• 
  Michael McMahon,Jeff Jones:
  A methodology for accelerated testing by mechanical actuation of MEMS devices.1382-1388
• 
  Julian W. Post,A. Bhattacharyya:
  Burn-in and thermal cyclic tests to determine the short-term reliability of a thin film resistance temperature detector.1389-1395
• 
  Mahdiar Hosein Ghadiry,Asrulnizam Bin Abd Manaf,Mahdieh Nadi Senjani,Meisam Rahmani,Muhammad Taghi Ahmad:
  Ionization coefficient of monolayer graphene nanoribbon.1396-1400
• 
  Mark D. Placette,Xuejun Fan,Jie-Hua Zhao,Darvin Edwards:
  Dual stage modeling of moisture absorption and desorption in epoxy mold compounds.1401-1408
• 
  Kenny C. Otiaba,R. S. Bhatti,Ndy N. Ekere,Sabuj Mallik,M. O. Alam,Emeka H. Amalu,Mathias Ekpu:
  Numerical study on thermal impacts of different void patterns on performance of chip-scale packaged power device.1409-1419
• 
  Michael Reid,Maurice N. Collins,Eric E. Dalton,Jeff M. Punch,David A. Tanner:
  Testing method for measuring corrosion resistance of surface mount chip resistors.1420-1427
• 
  Wei-Luen Jang,Tai-Siang Wang,Yen-Fen Lai,Kwang-Lung Lin,Yi-Shao Lai:
  The performance and fracture mechanism of solder joints under mechanical reliability test.1428-1434
• 
  Yoshihiko Kanda,Yoshiharu Kariya:
  Evaluation of creep properties for Sn-Ag-Cu micro solder joint by multi-temperature stress relaxation test.1435-1440
• 
  Yunsung Kim,Hyelim Choi,Hyoungjoo Lee,Dongjun Shin,Jinhan Cho,Heeman Choe:
  Improved reliability of copper-cored solder joints under a harsh thermal cycling condition.1441-1444
• 
  Jussi Hokka,Jue Li,Toni T. Mattila,Mervi Paulasto-Kröckel:
  The reliability of component boards studied with different shock impact repetition frequencies.1445-1453
• 
  Siva P. V. Nadimpalli,Jan K. Spelt:
  Prediction of pad cratering fracture at the copper pad - Printed circuit board interface.1454-1463
• 
  Tz-Cheng Chiu,Chun-Hui Chen:
  A numerical procedure for simulating delamination growth on interfaces of interconnect structures.1464-1474
• 
  Bo Wang,Jiajun Li,Anthony Gallagher,James Wrezel,Pongpinit Towashirporn,Naiqin Zhao:
  Drop impact reliability of Sn-1.0Ag-0.5Cu BGA interconnects with different mounting methods.1475-1482
• 
  Rita Faddoul,Nadège Reverdy-Bruas,Anne Blayo,Thomas Haas,Christian Zeilmann:
  Optimisation of silver paste for flexography printing on LTCC substrate.1483-1491
• 
  Chao-Ton Su,Chia-Ming Lin,C. Alec Chang:
  Optimization of the bistability property for flexible display by an integrated approach using Taguchi methods, neural networks and genetic algorithms.1492-1500
• 
  Soon-Wan Chung,Hyun-Tae Kim:
  Interfacial reliability between hot-melt polyamides resin and textile for wearable electronics application.1501-1510
• 
  Baojun Liu,Li Cai,Peng Bai,Weidong Peng:
  Reliability evaluation for single event crosstalk via probabilistic transfer matrix.1511-1514
• 
  Saurabh Kothawade,Koushik Chakraborty,Sanghamitra Roy,Yiding Han:
  Analysis of intermittent timing fault vulnerability.1515-1522
• 
  Wu-Hu Li,S. W. Joelle Ong:
  Cu diffusion in Ag-plated Cu leadframe packages.1523-1527
• 
  Pedro Reviriego,Costas Argyrides,Juan Antonio Maestro:
  Efficient error detection in Double Error Correction BCH codes for memory applications.1528-1530

Volume 52, Number 8, August 2012

Editorial

• 
  Asen Asenov,Ulf Schlichtmann,Cher Ming Tan,Hei Wong,Xing Zhou:
  ICMAT 2011 - Reliability and variability of semiconductor devices and ICs.1531

Special Section "ICMAT 2011 - Reliability and variability of semiconductor devices and Ics"

• 
  Hajdin Ceric,Roberto Lacerda de Orio,Siegfried Selberherr:
  Interconnect reliability dependence on fast diffusivity paths.1532-1538
• 
  Cher Ming Tan,Wei Li,Zhenghao Gan:
  Applications of finite element methods for reliability study of ULSI interconnections.1539-1545
• 
  Dominik Lorenz,Martin Barke,Ulf Schlichtmann:
  Efficiently analyzing the impact of aging effects on large integrated circuits.1546-1552
• 
  Meng Keong Lim,Jingyuan Lin,Yong Chiang Ee,Chee Mang Ng,Jun Wei,Chee Lip Gan:
  Experimental characterization and modelling of electromigration lifetime under unipolar pulsed current stress.1553-1558
• 
  Xin Pan,Helmut Graeb:
  Reliability optimization of analog integrated circuits considering the trade-off between lifetime and area.1559-1564
• 
  Bogdan Tudor,Joddy Wang,Zhaoping Chen,Robin Tan,Weidong Liu,Frank Lee:
  An accurate MOSFET aging model for 28 nm integrated circuit simulation.1565-1570
• 
  Josef Watts,Henry Trombley:
  Including spatial correlations of channel length and threshold voltage variation in circuit simulations.1571-1574
• 
  Feifei He,Cher Ming Tan:
  Effect of IC layout on the reliability of CMOS amplifiers.1575-1580
• 
  A. D. Trigg,Tai Chong Chai,Xiaowu Zhang,Xian Tong Chen,Leong Ching Wai:
  Modular sensor chip design for package stress evaluation and reliability characterisation.1581-1585
• 
  S. B. Shashank,Mohd Wajid,Satyam Mandavalli:
  Fault detection in resistive ladder network with minimal measurements.1586-1592
• 
  Jian Wu,Shurong Dong,Mingliang Li,Meng Miao,Fei Ma,Jianfeng Zheng,Yan Han:
  A novel power-clamp assisted complementary MOSFET for robust ESD protection.1593-1597
• 
  Meng Miao,Shurong Dong,Mingliang Li,Jian Wu,Fei Ma,Jianfeng Zheng,Yan Han:
  A novel gate-suppression technique for ESD protection.1598-1601
• 
  Yanjie Wang,Bo-Chao Huang,Ming Zhang,Jason C. S. Woo:
  Optimizing the fabrication process for high performance graphene field effect transistors.1602-1605
• 
  S.-L. Siu,Wing-Shan Tam,Hei Wong,Chi-Wah Kok,K. Kakusima,Hiroshi Iwai:
  Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors.1606-1609
• 
  Vandana Kumari,Manoj Saxena,R. S. Gupta,Mridula Gupta:
  Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications.1610-1612
• 
  B. L. Yang,Hei Wong,Kuniyuki Kakushima,Hiroshi Iwai:
  Improving the electrical characteristics of MOS transistors with CeO₂/La₂O₃ stacked gate dielectric.1613-1616
• 
  Rakhi Narang,Manoj Saxena,R. S. Gupta,Mridula Gupta:
  Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor.1617-1620
• 
  Matteo Meneghini,Matteo Dal Lago,L. Rodighiero,Nicola Trivellin,Enrico Zanoni,Gaudenzio Meneghesso:
  Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress.1621-1626
• 
  Jer-Chyi Wang,Chih-Ting Lin,Chi-Hsien Huang,Chao-Sung Lai,Chin-Hsiang Liao:
  Charge storage and data retention characteristics of forming gas-annealed Gd₂O₃-nanocrystal nonvolatile memory cell.1627-1631
• 
  Sihan Joseph Chen,Cher Ming Tan,Boon Khai Eric Chen,Zhi Yong Shaun Chua:
  Ensuring accuracy in optical and electrical measurement of ultra-bright LEDs during reliability test.1632-1635
• 
  J. Liu,Hei Wong,Sik-Lam Siu,Chi-Wah Kok,Valeriu Filip:
  Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing.1636-1639
• 
  Fei Ma,Yan Han,Shurong Dong,Meng Miao,Jianfeng Zheng,Jian Wu,Cheng-gong Han,Kehan Zhu:
  Investigation of ESD protection strategy in high voltage Bipolar-CMOS-DMOS process.1640-1644
• 
  Wing-Shan Tam,Sik-Lam Siu,Oi-Ying Wong,Chi-Wah Kok,Hei Wong,Valeriu Filip:
  Modeling of terminal ring structures for high-voltage power MOSFETs.1645-1650
• 
  Cheng-En Lue,I-Shun Wang,Chi-Hsien Huang,Yu-Ting Shiao,Hau-Cheng Wang,Chia-Ming Yang,Shu-Hao Hsu,Ching-Yu Chang,William Wang,Chao-Sung Lai:
  pH sensing reliability of flexible ITO/PET electrodes on EGFETs prepared by a roll-to-roll process.1651-1654

Regular Research Papers

• 
  Masaoud Houshmand Kaffashian,Reza Lotfi,Khalil Mafinezhad,Hamid Mahmoodi:
  Impacts of NBTI/PBTI on performance of domino logic circuits with high-k metal-gate devices in nanoscale CMOS.1655-1659
• 
  Gang Chen,Jerry Yu,Pui-To Lai:
  A study on MIS Schottky diode based hydrogen sensor using La₂O₃ as gate insulator.1660-1664
• 
  A. R. Maligno,David C. Whalley,Vadim V. Silberschmidt:
  Thermal fatigue life estimation and delamination mechanics studies of multilayered MEMS structures.1665-1678
• 
  Marco Lanuzza,Raffaele De Rose,Fabio Frustaci,Stefania Perri,Pasquale Corsonello:
  Comparative analysis of yield optimized pulsed flip-flops.1679-1689
• 
  Rasidi Sule,Peter A. Olubambi,Bolanle Tolulope Abe,O. T. Johnson:
  Synthesis and characterization of sub-micron sized copper-ruthenium-tantalum composites for interconnection application.1690-1698
• 
  Wen-Hwa Chen,Ching-Feng Yu,Hsien-Chie Cheng,Su-Tsai Lu:
  Crystal size and direction dependence of the elastic properties of Cu₃Sn through molecular dynamics simulation and nanoindentation testing.1699-1710
• 
  M. Sadeghinia,Kaspar M. B. Jansen,Leo J. Ernst:
  Characterization of the viscoelastic properties of an epoxy molding compound during cure.1711-1718
• 
  Wojciech Steplewski,Tomasz Serzysko,Grazyna Koziol,Andrzej Dziedzic:
  Preliminary assessment of the stability of thin- and polymer thick-film resistors embedded into printed wiring boards.1719-1725
• 
  Zhaohui Chen,Qin Zhang,Kai Wang,Mingxiang Chen,Sheng Liu:
  Fluid-solid coupling thermo-mechanical analysis of high power LED package during thermal shock testing.1726-1734
• 
  Rishad A. Shafik,Bashir M. Al-Hashimi,Jeffrey S. Reeve:
  System-level design optimization of reliable and low power multiprocessor system-on-chip.1735-1748

Book Review

• 
  Nicholas Williard,Sony Mathew:
  Book review: Effective FMEAs.1749

Volume 52, Numbers 9-10, September - October 2012

• 
  Mauro Ciappa,Paolo Cova,Francesco Iannuzzo,Gaudenzio Meneghesso:
  Editorial.1751-1752

Keynote Papers

• 
  J. W. McPherson:
  Time dependent dielectric breakdown physics - Models revisited.1753-1760
• 
  Paul Pfäffli,P. Tikhomirov,X. Xu,I. Avci,Y.-S. Oh,P. Balasingam,S. Krishnamoorthy,T. Ma:
  TCAD for reliability.1761-1768
• 
  Gianluca Boselli:
  ESD design challenges in state-of-the-art analog technologies.1769-1775

Topic A:Quality and Reliability Techniques for Devices and Systems

• 
  Marcantonio Catelani,Lorenzo Ciani,Giovanni Barile:
  A new design technique of TFT-LCD display for avionics application.1776-1780
• 
  Rodrigo Possamai Bastos,Frank Sill Torres,Giorgio Di Natale,Marie-Lise Flottes,Bruno Rouzeyre:
  Novel transient-fault detection circuit featuring enhanced bulk built-in current sensor with low-power sleep-mode.1781-1786
• 
  Yao Wang,Marius Enachescu,Sorin Dan Cotofana,Liang Fang:
  Variation tolerant on-chip degradation sensors for dynamic reliability management systems.1787-1791
• 
  Nicoleta Cucu Laurenciu,Sorin Dan Cotofana:
  Context aware slope based transistor-level aging model.1792-1796
• 
  C. Banc,J. Guinet,E. Doche:
  High performance electronics in long lifetime, continuous operation, industrial products: The art of balancing conflicting interests.1797-1802
• 
  Luca Cola,M. De Tomasi,Riccardo Enrici Vaion,A. Mervic,P. Zabberoni:
  Read disturb on flash memories: Study on temperature annealing effect.1803-1807
• 
  Giorgio De Pasquale,Marco Barbato,Valentina Giliberto,Gaudenzio Meneghesso,Aurelio Somà:
  Reliability improvement in microstructures by reducing the impact velocity through electrostatic force modulation.1808-1811
• 
  Clemens Ostermaier,Peter Lagger,Mohammed Alomari,Patrick Herfurth,David Maier,Alexander Alexewicz,Marie-Antoinette di Forte-Poisson,Sylvain L. Delage,Gottfried Strasser,Dionyz Pogany,Erhard Kohn:
  Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure.1812-1815
• 
  R. Llido,Pascal Masson,Arnaud Régnier,Vincent Goubier,Gérald Haller,Vincent Pouget,Dean Lewis:
  Effects of 1064 nm laser on MOS capacitor.1816-1821
• 
  Paulo F. Butzen,Vinícius Dal Bem,André Inácio Reis,Renato P. Ribas:
  Design of CMOS logic gates with enhanced robustness against aging degradation.1822-1826
• 
  Lutz Meinshausen,Hélène Frémont,Kirsten Weide-Zaage:
  Migration induced IMC formation in SAC305 solder joints on Cu, NiAu and NiP metal layers.1827-1832
• 
  Marcantonio Catelani,Lorenzo Ciani:
  Experimental tests and reliability assessment of electronic ballast system.1833-1836
• 
  Zhengliang Lv,Linda S. Milor,Shiyuan Yang:
  Statistical model of NBTI and reliability simulation for analogue circuits.1837-1842
• 
  Samuel N. Pagliarini,G. G. dos Santos,Lirida Alves de Barros Naviner,Jean-François Naviner:
  Exploring the feasibility of selective hardening for combinational logic.1843-1847
• 
  Weisheng Zhao,Yue Zhang,Thibaut Devolder,Jacques-Olivier Klein,Dafine Ravelosona,Claude Chappert,Pascale Mazoyer:
  Failure and reliability analysis of STT-MRAM.1848-1852
• 
  Eduardo Nogueira,Manuel Vázquez,J. Mateos:
  Accelerated life test of high luminosity AlGaInP LEDs.1853-1858
• 
  D. Othman,M. Bouarroudj-Berkani,Stéphane Lefebvre,Ali Ibrahim,Zoubir Khatir,A. Bouzourene:
  Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application.1859-1864
• 
  Na Gong,Shixiong Jiang,Jinhui Wang,B. Aravamudhan,K. Sekar,Ramalingam Sridhar:
  Hybrid-cell register files design for improving NBTI reliability.1865-1869
• 
  Hongbin Shi,F. X. Che,Cuihua Tian,Rui Zhang,Jong Tae Park,Toshitsugu Ueda:
  Analysis of edge and corner bonded PSvfBGA reliability under thermal cycling conditions by experimental and finite element methods.1870-1875

Topic B1:Failure Mechanisms in SI Technologies and Nanoelectronics:Hot Carriers, High K...

• 
  G. Ghidini:
  Charge-related phenomena and reliability of non-volatile memories.1876-1882
• 
  Maria Toledano-Luque,Ben Kaczer,Jacopo Franco,Philippe Roussel,Tibor Grasser,Guido Groeseneken:
  Defect-centric perspective of time-dependent BTI variability.1883-1890
• 
  Karina Rott,Hans Reisinger,Stefano Aresu,Christian Schlünder,Klaus Kölpin,Wolfgang Gustin,Tibor Grasser:
  New insights on the PBTI phenomena in SiON pMOSFETs.1891-1894
• 
  Philippe Chiquet,Pascal Masson,Romain Laffont,Gilles Micolau,Jérémy Postel-Pellerin,Frédéric Lalande,Bernard Bouteille,Jean-Luc Ogier:
  Investigation of the effects of constant voltage stress on thin SiO₂ layers using dynamic measurement protocols.1895-1900
• 
  Dongwoo Kim,Seonhaeng Lee,Cheolgyu Kim,Chiho Lee,Jeongsoo Park,Bongkoo Kang:
  Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress.1901-1904
• 
  Seonhaeng Lee,Dongwoo Kim,Cheolgyu Kim,N.-H. Lee,Gang-Jun Kim,Chiho Lee,Jeongsoo Park,Bongkoo Kang:
  Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs.1905-1908
• 
  Enrique Miranda,Takamasa Kawanago,Kuniyuki Kakushima,Jordi Suñé,Hiroshi Iwai:
  Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown.1909-1912
• 
  Guido T. Sasse,Martin Combrié:
  The temperature dependence of mixed mode degradation in bipolar transistors.1913-1917
• 
  Louis Gerrer,Stanislav Markov,Salvatore M. Amoroso,Fikru Adamu-Lema,Asen Asenov:
  Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs.1918-1923
• 
  Nuria Ayala,Javier Martín-Martínez,Rosana Rodríguez,M. B. González,Montserrat Nafría,Xavier Aymerich,Eddy Simoen:
  Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs.1924-1927
• 
  Gabriele Navarro,Sarra Souiki,Alain Persico,Veronique Sousa,Jean-François Nodin,Carine Jahan,François Aussenac,Vincent Delaye,Olga Cueto,Luca Perniola,Barbara De Salvo:
  High temperature reliability of μtrench Phase-Change Memory devices.1928-1931
• 
  Jacopo Franco,S. Graziano,Ben Kaczer,Felice Crupi,Lars-Åke Ragnarsson,Tibor Grasser,Guido Groeseneken:
  BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic.1932-1935
• 
  Mingu Kang,Ilgu Yun:
  Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs.1936-1939
• 
  Song Lan,Cher Ming Tan,Kevin Wu:
  Reliability study of LED driver - A case study of black box testing.1940-1944
• 
  Seung-Min Lee,Chong-Gun Yu,Seung Min Jeong,Won-Ju Cho,Jong Tae Park:
  Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs.1945-1948
• 
  Seonhaeng Lee,Dongwoo Kim,Cheolgyu Kim,Chiho Lee,Jeongsoo Park,Bongkoo Kang:
  Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs.1949-1952

Topic B2:Characterization and Modelling of Failure Mechanisms in Silicon Technologies and Nanoelectronics:Low K, CU Interconnects

• 
  Chang-Chih Chen,Fahad Ahmed,Dae Hyun Kim,Sung Kyu Lim,Linda Milor:
  Backend dielectric reliability simulator for microprocessor system.1953-1959
• 
  Vincent M. Dwyer:
  Diffusivity variation in Electromigration failure.1960-1965
• 
  Rainer Pelzer,Michael Nelhiebel,Robert Zink,Stefan Wöhlert,Alice Lassnig,Golta Khatibi:
  High temperature storage reliability investigation of the Al-Cu wire bond interface.1966-1970
• 
  Biljana Dimcic,Riet Labie,Joke De Messemaeker,Kris Vanstreels,Kris Croes,Bert Verlinden,Ingrid De Wolf:
  Diffusion growth of Cu₃Sn phase in the bump and thin film Cu/Sn structures.1971-1974
• 
  Yasmin Abdul Wahab,Anuar Fadzil Ahmad,Hanim Hussin,Norhayati Soin:
  Reduction of annealed-induced wafer defects in dual-damascene copper interconnects.1975-1980
• 
  Roberto Lacerda de Orio,Hajdin Ceric,Siegfried Selberherr:
  Electromigration failure in a copper dual-damascene structure with a through silicon via.1981-1986
• 
  Jörg Kludt,Kirsten Weide-Zaage,Markus Ackermann,Verena Hein:
  Simulation of the influence of TiAl₃ layers on the thermal-electrical and mechanical behaviour of Al metallizations.1987-1992
• 
  Mathias Plappert,Oliver Humbel,Angelika Koprowski,Mathias Nowottnick:
  Characterization of Ti diffusion in PVD deposited WTi/AlCu metallization on monocrystalline Si by means of secondary ion mass spectroscopy.1993-1997

Topic B3:Characterisation and Modelling of Failure Mechanisms in Silicon Technologies And Nanoelectronics:ESD and Latch-UP

• 
  Philippe Galy,Johan Bourgeat,Jean Jimenez,Nicolas Guitard,Alexandre Dray,Ghislain Troussier,Blaise Jacquier,David Marin-Cudraz:
  Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology.1998-2004
• 
  Gerhard Groos:
  Characterisation method for chip card ESD events causing terminal failures.2005-2009
• 
  Morgan Cason,Giuseppe Livio Gobbato,Luca Manfredi,Maurizio Nessi,Raffaele Ricci,Paolo Pulici,Claudio Maria Villa:
  Thermal overstress of Cu wire under pulsed current condition.2010-2013
• 
  Jae-Seong Jeong:
  Failure mechanism and reliability test method for USB interface circuitry on CPUs for mobile devices.2014-2018

Topic C1:Advanced Techniques for Failure Analysis and Case Studies:EOBT

• 
  Andrea Irace:
  Infrared Thermography application to functional and failure analysis of electron devices and circuits.2019-2023
• 
  Carlo Pagano,Christian Boit,Arkadiusz Glowacki,Reiner Leihkauf,Yoshiyuki Yokoyama:
  Comparison of FET electro-optical modulation for 1300 nm and 1064 nm laser sources.2024-2030
• 
  Arkadiusz Glowacki,Christian Boit,Philippe Perdu:
  Optimum Si thickness for backside detection of photon emission using Si-CCD.2031-2034
• 
  Alexandre Sarafianos,Roxane Llido,Jean-Max Dutertre,Olivier Gagliano,Valerie Serradeil,Mathieu Lisart,Vincent Goubier,Assia Tria,Vincent Pouget,Dean Lewis:
  Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90 nm technology.2035-2038
• 
  Tigran Nshanian,Pat N. Grillot,Michael Holub,Satoshi Watanabe,Werner Götz:
  Effect of residual stress on the electrical activity of dislocations in GaN light emitting diodes.2039-2042
• 
  M. R. Bruce,L. K. Ross,C. Scholz,L. Joshi,Vrajesh Dave,C. M. Chua:
  Through silicon in-circuit logic analysis for localizing logic pattern failures.2043-2049
• 
  Marco Sanna,Matteo Medda:
  FIB/TEM analysis supported by μ-probing approach to identify via marginality.2050-2053
• 
  Eddie Redmard,Deny Hanan,Alex Shevachman:
  Detection of DR violations in ASIC components using photon emission techniques.2054-2057
• 
  Marie Castignolles,Stéphane Alves,Philippe Rousseille,Thomas Zirilli:
  Backside failure analysis application of light scattering for active silicon defect detection.2058-2063
• 
  Giancarlo Calvagno,Giuseppe Muni,Andrea Jossa,Domenico Mello:
  Sample Preparation methodology for ultra thin oxide damage in Metal-Insulator-Metal capacitors.2064-2067
• 
  Amjad Deyine,Emmanuel Doche,F. Battistella,Christophe Banc:
  A challenging case study resolved by using the Dynamic Laser Stimulation technique.2068-2072
• 
  Jia Lu,BoCheng Cao,WenShe Wu,YuFeng Dai,ChuangJun Huang,Giovanna Mura:
  MIM capacitor-related early-stage field failures.2073-2076

Topic C2:Advanced Techniques for Failure Analysis and Case Studies:Other Advanced Characterisation Techniques

• 
  Lucio Cinà,Aldo Di Carlo,Andrea Reale:
  Time resolved temperature profiles of high power HEMTs by photocurrent spectral analysis.2077-2080
• 
  Akihiko Watanabe,Ichiro Omura:
  Real-time failure imaging system under power stress for power semiconductors using Scanning Acoustic Tomography (SAT).2081-2086
• 
  Guillaume Bascoul,Philippe Perdu,Maryse Béguin,Dean Lewis:
  High performance thermography with InGaAs photon counting camera.2087-2092
• 
  Isabella Rossetto,Matteo Meneghini,Tiziana Tomasi,Dai Yufeng,Gaudenzio Meneghesso,Enrico Zanoni:
  Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits.2093-2097
• 
  Joerg Jatzkowski,Michél Simon-Najasek,Frank Altmann:
  Novel techniques for dopant contrast analysis on real IC structures.2098-2103
• 
  Raoul van Gastel,Gregor Hlawacek,Harold J. W. Zandvliet,Bene Poelsema:
  Subsurface analysis of semiconductor structures with helium ion microscopy.2104-2109
• 
  Violaine Iglesias,Mario Lanza,Albin Bayerl,Marc Porti,Montserrat Nafría,Xavier Aymerich,Lifeng Liu,Jinfeng Kang,Gennadi Bersuker,Kai Zhang,Ziyong Shen:
  Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO₂/Pt structures.2110-2114
• 
  Mario Poschgan,Josef Maynollo,Michael Inselsbacher:
  Inverted high frequency Scanning Acoustic Microscopy inspection of power semiconductor devices.2115-2119
• 
  Yang Lu,Euan Ramsay,Christopher R. Stockbridge,Abdulkadir Yurt,F. Hakan Köklü,Thomas G. Bifano,M. Selim Ünlü,Bennett B. Goldberg:
  Spherical aberration correction in aplanatic solid immersion lens imaging using a MEMS deformable mirror.2120-2122
• 
  Jan Gaudestad,Vladimir Talanov,Po Chih Huang:
  Space Domain Reflectometry for opens detection location in microbumps.2123-2126
• 
  Rosa Lucia Torrisi,Vittorio Maiorana,Roberto Nicolosi,Giovanni Presti:
  Catastrophic flip-chip failures at thermal cycles caused by micro-cracks in passivation layer, present only in the spacing between minimum width stripes of last metal level.2127-2134
• 
  Andreas Rummel,Klaus Schock,Andrew Smith,Stephan Kleindiek:
  A new approach for making electrically conductive interconnections between small contacts in failure analysis.2135-2138
• 
  Mauro Ciappa,Emre Ilgünsatiroglu,Alexey Yu. Illarionov:
  Monte Carlo simulation of emission site, angular and energy distributions of secondary electrons in silicon at low beam energies.2139-2143

Topic D:Failure Mechanisms in Microwave, Wide Band-Gap And Photonic Devices

• 
  Richard Lossy,Hervé Blanck,Joachim Würfl:
  Reliability studies on GaN HEMTs with sputtered Iridium gate module.2144-2148
• 
  Arvydas Matulionis,Juozapas Liberis,Emilis Sermuksnis,Linas Ardaravicius,Artur Simukovic,Cemil Kayis,Congyong Zhu,Romualdo Ferreyra,Vitaliy Avrutin,Ümit Özgür,Hadis Morkoç:
  Window for better reliability of nitride heterostructure field effect transistors.2149-2152
• 
  Alessandro Chini,Fabio Soci,Fausto Fantini,Antonio Nanni,Alessio Pantellini,Claudio Lanzieri,Davide Bisi,Gaudenzio Meneghesso,Enrico Zanoni:
  Field plate related reliability improvements in GaN-on-Si HEMTs.2153-2158
• 
  Fanny Berthet,Yannick Guhel,Hamid Gualous,Bertrand Boudart,Jean-Lionel Trolet,Marc Piccione,Christophe Gaquière:
  Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence.2159-2163
• 
  Matteo Dal Lago,Matteo Meneghini,Nicola Trivellin,Giovanna Mura,Massimo Vanzi,Gaudenzio Meneghesso,Enrico Zanoni:
  Phosphors for LED-based light sources: Thermal properties and reliability issues.2164-2167
• 
  Sihan Chen,Cher Ming Tan,Guan Hong Tan,Feifei He:
  Degradation behavior of high power light emitting diode under high frequency switching.2168-2173
• 
  So-Ra Gang,Deokgi Kim,Sang-Mook Kim,Nam Hwang,Kwang-Cheol Lee:
  Improvement in the moisture stability of CaS: Eu phosphor applied in light-emitting diodes by titania surface coating.2174-2179
• 
  Anton E. Chernyakov,Michael E. Levinshtein,Pavel V. Petrov,Natalia M. Shmidt,Evgeniia I. Shabunina,Alexander L. Zakheim:
  Failure mechanisms in blue InGaN/GaN LEDs for high power operation.2180-2183
• 
  Benoit Lambert,Nathalie Labat,Dominique Carisetti,Serge Karboyan,Jean-Guy Tartarin,Jim Thorpe,Laurent Brunel,Arnaud Curutchet,Nathalie Malbert,Eddy Latu-Romain,Michel Mermoux:
  Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.2184-2187
• 
  Denis Marcon,John Viaene,Paola Favia,Hugo Bender,Xuanwu Kang,Silvia Lenci,Steve Stoffels,Stefaan Decoutere:
  Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop.2188-2193
• 
  Paul Marko,Matteo Meneghini,Sergey Bychikhin,Denis Marcon,Gaudenzio Meneghesso,Enrico Zanoni,Dionyz Pogany:
  IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors.2194-2199
• 
  Benoit Lambert,Jim Thorpe,Reza Behtash,Bernd Schauwecker,Franck Bourgeois,Helmut Jung,Joëlle Bataille,Patrick Mezenge,Cyril Gourdon,Catherine Ollivier,Didier Floriot,Hervé Blanck:
  Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification.2200-2204
• 
  Jean-Baptiste Fonder,Laetitia Chevalier,Cédric Genevois,Olivier Latry,Cedric Duperrier,Farid Temcamani,Hichame Maanane:
  Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test.2205-2209
• 
  Peter Ersland,Shivarajiv Somisetty:
  Reliability validation of compound semiconductor foundry processes.2210-2214
• 
  Suehye Park,Edward Namkyu Cho,Ilgu Yun:
  Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors.2215-2219
• 
  Abel Fontserè,Amador Pérez-Tomás,Philippe Godignon,José Millán,Herbert De Vleeschouwer,John M. Parsey,Peter Moens:
  Wafer scale and reliability investigation of thin HfO₂·AlGaN/GaN MIS-HEMTs.2220-2223
• 
  Satoshi Ono,Mauro Ciappa,Shigeru Hiura,Wolfgang Fichtner:
  Electro-thermal simulation in the time domain of GaN HEMT for RF switch-mode amplifier.2224-2227

Topic E:Packaging, Assemblies, Passive Components and MEMS

• 
  Harrie A. C. Tilmans,Jeroen De Coster,Philippe Hélin,Vladimir Cherman,Anne Jourdain,Piet De Moor,Bart Vandevelde,Nga P. Pham,Joseph Zekry,Ann Witvrouw,Ingrid De Wolf:
  MEMS packaging and reliability: An undividable couple.2228-2234
• 
  Thomas Kuenzig,Gabriele Schrag,Jacopo Iannacci:
  Modeling and simulation of an active restoring mechanism for high reliability switches in RF-MEMS technology.2235-2239
• 
  Matroni Koutsoureli,Loukas Michalas,George J. Papaioannou:
  Temperature effects on the bulk discharge current of dielectric films of MEMS capacitive switches.2240-2244
• 
  Anna Persano,Augusto Tazzoli,Paola Farinelli,Gaudenzio Meneghesso,Pietro Siciliano,Fabio Quaranta:
  K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability.2245-2249
• 
  Viorel Banu,Philippe Godignon,Xavier Perpiñà,Xavier Jordà,José Millán:
  Enhanced power cycling capability of SiC Schottky diodes using press pack contacts.2250-2255
• 
  Fangzhou Ling,Jeroen De Coster,Ann Witvrouw,Jean-Pierre Celis,Ingrid De Wolf:
  Study of glass frit induced stiction using a micromirror array.2256-2260
• 
  Alexis Peschot,Christophe Poulain,Frédéric Souchon,Pierre-Louis Charvet,Nelly Bonifaci,Olivier Lesaint:
  Contact degradation due to material transfer in MEM switches.2261-2266
• 
  Loukas Michalas,Anurag Garg,Ayyaswamy Venkattraman,Matroni Koutsoureli,Alina A. Alexeenko,Dimitrios Peroulis,George J. Papaioannou:
  A study of field emission process in electrostatically actuated MEMS switches.2267-2271
• 
  Ahmad Khaled,Moatassim Raoof,Vladimir Cherman,Karoline Jans,Mohammad Abbas,Shaker Ebrahim,Goerge Bryce,Peter Verheyen,Ann Witvrouw,Ingrid De Wolf:
  Effect of the functionalization process on the performance of SiGe MEM resonators used for bio-molecular sensing.2272-2277
• 
  Samed Barnat,Hélène Frémont,Alexandrine Guédon-Gracia,Eric Cadalen:
  Evaluation by three-point-bend and ball-on-ring tests of thinning process on silicon die strength.2278-2282
• 
  Ralf Schmidt,Christian König,Peter Prenosil:
  Novel wire bond material for advanced power module packages.2283-2288
• 
  Michael Goroll,Reinhard Pufall:
  Determination of adhesion and delamination prediction for semiconductor packages by using Grey Scale Correlation and Cohesive Zone Modelling.2289-2293
• 
  Xavier Perpiñà,Robert J. Werkhoven,Jiri Jakovenko,J. Formánek,Miquel Vellvehí,Xavier Jordà,Jos M. G. Kunen,Peter Bancken,Pieter Jan Bolt:
  Design for reliability of solid state lighting systems.2294-2300
• 
  H. Q. S. Dang,Martin R. Corfield,Alberto Castellazzi,C. Mark Johnson,Patrick Wheeler:
  Repetitive high peak current pulsed discharge film-capacitor reliability testing.2301-2305
• 
  Jean-Baptiste Jullien,Bernard Plano,Hélène Frémont:
  Pushing toward the limits of acceleration: Example on wire-bond assemblies.2306-2309
• 
  Nuria Torres Matabosch,Mehmet Kaynak,Fabio Coccetti,Matthias Wietstruck,Bernd Tillack,Jean Louis Cazaux:
  Estimation of RF performance from LF measurements: Towards the design for reliability in RF-MEMS.2310-2313
• 
  Luis A. Navarro,Xavier Perpiñà,Miquel Vellvehí,Viorel Banu,Xavier Jordà:
  Thermal cycling analysis of high temperature die-attach materials.2314-2320
• 
  François Le Henaff,Stephane Azzopardi,Jean-Yves Delétage,Eric Woirgard,Serge Bontemps,Julien Joguet:
  A preliminary study on the thermal and mechanical performances of sintered nano-scale silver die-attach technology depending on the substrate metallization.2321-2325
• 
  Jae-Seong Jeong,Nochang Park,Changwoon Han:
  Field failure mechanism study of solder interconnection for crystalline silicon photovoltaic module.2326-2330
• 
  Rui Zhang,Hongbin Shi,Yuehong Dai,Jong Tae Park,Toshitsugu Ueda:
  Thermo-mechanical reliability optimization of MEMS-based quartz resonator using validated finite element model.2331-2335

Topic F:Power, Automotive, Aerospace and Industrial Applications

• 
  Werner Kanert:
  Active cycling reliability of power devices: Expectations and limitations.2336-2341
• 
  Ephraim Suhir:
  When adequate and predictable reliability is imperative.2342-2346
• 
  Oliver Schilling,Marc Schäfer,Krzysztof Mainka,Markus Thoben,Frank Sauerland:
  Power cycling testing and FE modelling focussed on Al wire bond fatigue in high power IGBT modules.2347-2352
• 
  Bernhard Czerny,Martin Lederer,Bernhard Nagl,Alexander Trnka,Golta Khatibi,Markus Thoben:
  Thermo-mechanical analysis of bonding wires in IGBT modules under operating conditions.2353-2357
• 
  Ashraf Ahmed,Yasaman Shadrokh,Lee Coulbeck,Alberto Castellazzi,C. Mark Johnson:
  A closed-loop IGBT non-destructive tester.2358-2362
• 
  Giovanni Busatto,Valentina De Luca,Francesco Iannuzzo,Annunziata Sanseverino,Francesco Velardi:
  Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure.2363-2367
• 
  Jaume Roig,Julien Lebon,Steven Vandeweghe,Samir Mouhoubi,Filip Bauwens:
  Improved current filament control during Zener diode zapping.2368-2373
• 
  Stefano de Filippis,Helmut Köck,Michael Nelhiebel,Vladimír Kosel,Stefan Decker,Michael Glavanovics,Andrea Irace:
  Modeling of highly anisotropic microstructures for electro-thermal simulations of power semiconductor devices.2374-2379
• 
  Yuka Morisawa,Takuya Kodama,Satoshi Matsumoto:
  Design guideline of a thin film SOI power MOSFET for high thermal stability.2380-2384
• 
  Michele Riccio,Giuseppe De Falco,Luca Maresca,Giovanni Breglio,Ettore Napoli,Andrea Irace,Yohei Iwahashi,Paolo Spirito:
  3D electro-thermal simulations of wide area power devices operating in avalanche condition.2385-2390
• 
  Paolo Cova,Nicola Delmonte:
  Thermal modeling and design of power converters with tight thermal constraints.2391-2396
• 
  Tilo Poller,Thomas Basler,Magnar Hernes,Salvatore D'Arco,Josef Lutz:
  Mechanical analysis of press-pack IGBTs.2397-2402
• 
  Erik E. Kostandyan,Ke Ma:
  Reliability estimation with uncertainties consideration for high power IGBTs in 2.3 MW wind turbine converter system.2403-2408
• 
  Ana Villamor-Baliarda,Piet Vanmeerbeek,Michele Riccio,Vincenzo d'Alessandro,Andrea Irace,Jaume Roig,David Flores,Peter Moens:
  Influence of charge balance on the robustness of trench-based super junction diodes.2409-2413
• 
  Alberto Castellazzi,Tsuyoshi Funaki,Tsunenobu Kimoto,Takashi Hikihara:
  Thermal instability effects in SiC Power MOSFETs.2414-2419
• 
  Carmine Abbate,Giovanni Busatto,Francesco Iannuzzo:
  Unclamped repetitive stress on 1200 V normally-off SiC JFETs.2420-2425
• 
  Alberto Zanandrea,Eldad Bahat-Treidel,Fabiana Rampazzo,Antonio Stocco,Matteo Meneghini,Enrico Zanoni,Oliver Hilt,Ponky Ivo,Joachim Würfl,Gaudenzio Meneghesso:
  Single- and double-heterostructure GaN-HEMTs devices for power switching applications.2426-2430
• 
  Yohei Iwahashi,Yoshihito Mizuno,Masafumi Hara,Ryuzo Tagami,Masanori Ishigaki:
  Analysis of current distribution on IGBT under unclamped inductive switching conditions.2431-2434
• 
  Aleksandr S. Petrov,Viktor N. Ulimov:
  Some features of degradation in bipolar transistors at different test conditions for total ionizing dose effect.2435-2437
• 
  Akram Eddahech,Olivier Briat,Eric Woirgard,Jean-Michel Vinassa:
  Remaining useful life prediction of lithium batteries in calendar ageing for automotive applications.2438-2442
• 
  Yasushi Yamada:
  Power semiconductor module using a bonding film with anisotropic thermal conduction.2443-2446
• 
  Markus Ackermann,Verena Hein,Christian Kovács,Kirsten Weide-Zaage:
  A design for robust wide metal tracks.2447-2451
• 
  Sabrina Rathgeber,R. Bauer,Andreas Otto,Erik Peter,Jürgen Wilde:
  Harsh environment application of electronics - Reliability of copper wiring and testability thereof.2452-2456
• 
  Zhifeng Dou,Frédéric Richardeau,Emmanuel Sarraute,Vincent Bley,Jean-Marc Blaquière,Claire Vella,Gilles Gonthier:
  PCB dual-switch fuse with energetic materials embedded: Application for new fail-safe and fault-tolerant converters.2457-2464
• 
  Stefania Baccaro,Giovanni Busatto,Mauro Citterio,Paolo Cova,Nicola Delmonte,Francesco Iannuzzo,Agostino Lanza,Marco Riva,Annunziata Sanseverino,Giorgio Spiazzi:
  Reliability oriented design of power supplies for high energy physics applications.2465-2470
• 
  Ignasi Cortés,Xavier Perpiñà,Jesús Urresti,Xavier Jordà,José Rebollo:
  Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling.2471-2476
• 
  Hamid Gualous,Roland Gallay,Monzer Al Sakka,Amrane Oukaour,Boubekeur Tala-Ighil,Bertrand Boudart:
  Calendar and cycling ageing of activated carbon supercapacitor for automotive application.2477-2481
• 
  Cécile Weulersse,Florent Miller,Dan Alexandrescu,Erwin Schaefer,Olivier Crépel,Rémi Gaillard:
  Test methodology of a new upset mechanism induced by protons in deep sub-micron devices.2482-2486

Topic G:Reliability of Photovoltaic and Organic Devices:Thin Film, Concentration, OLED, TFT, ...

• 
  Alessia Quatela,Antonio Agresti,Simone Mastroianni,Sara Pescetelli,Thomas M. Brown,Andrea Reale,Aldo Di Carlo:
  Fabrication and reliability of dye solar cells: A resonance Raman scattering study.2487-2489
• 
  Nicola Wrachien,Daniel Bari,Jaroslav Kovác,Jan Jakabovic,Daniel Donoval,Gaudenzio Meneghesso,Andrea Cester:
  Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure.2490-2494
• 
  Daniele Bari,Nicola Wrachien,Roberto Tagliaferro,Thomas M. Brown,Andrea Reale,Aldo Di Carlo,Gaudenzio Meneghesso,Andrea Cester:
  Reliability study of dye-sensitized solar cells by means of solar simulator and white LED.2495-2499
• 
  Raffaele De Rose,Antonio Malomo,Paolo Magnone,Felice Crupi,Giorgio Cellere,Marco Martire,Diego Tonini,Enrico Sangiorgi:
  A methodology to account for the finger interruptions in solar cell performance.2500-2503
• 
  Seul Ki Lee,Sung Il Hong,Yeon Ho Lee,Se Won Lee,Won-Ju Cho,Jong Tae Park:
  Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics.2504-2507
• 
  Loukas Michalas,Anastasia Syntychaki,Matroni Koutsoureli,George J. Papaioannou,Apostolos T. Voutsas:
  A temperature study of photosensitivity in SLS polycrystalline silicon TFTs.2508-2511

Volume 52, Number 11, November 2012

Research Papers

• 
  Yoann Mamy Randriamihaja,Vincent Huard,Xavier Federspiel,Alban Zaka,Pierpaolo Palestri,Denis Rideau,David Roy,Alain Bravaix:
  Microscopic scale characterization and modeling of transistor degradation under HC stress.2513-2520
• 
  Nadia Rezzak,Pierre Maillard,Ronald D. Schrimpf,Michael L. Alles,Daniel M. Fleetwood,Yanfeng Albert Li:
  The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.2521-2526
• 
  X. D. Huang,Pui-To Lai,Johnny K. O. Sin:
  Performance of nonvolatile memory by using band-engineered SrTiO₃/HfON stack as charge-trapping layer.2527-2531
• 
  Antonio Cerdeira,Magali Estrada,Blanca S. Soto-Cruz,Benjamín Iñíguez:
  Modeling the behavior of amorphous oxide thin film transistors before and after bias stress.2532-2536
• 
  Nebojsa D. Jankovic:
  Numerical simulations of N-type CdSe poly-TFT electrical characteristics with trap density models of Atlas/Silvaco.2537-2541
• 
  Patrick G. Whiting,Nicholas G. Rudawski,M. R. Holzworth,Stephen J. Pearton,Kevin S. Jones,Lu Liu,T. S. Kang,Fan Ren:
  Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors.2542-2546
• 
  Abel Fontserè,A. Pérez-Tomás,Marcel Placidi,N. Baron,S. Chenot,Yvon Cordier,J. C. Moreno:
  Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1).2547-2550
• 
  Chao-Hung Chen,Hsien-Chin Chiu,Feng-Tso Chien,Hao-Wei Chuang,Kuo-Jen Chang,Yau-Tang Gau:
  High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design.2551-2555
• 
  Hsien-Chin Chiu,Chao-Wei Lin,Hsuan-Ling Kao,Geng-Yen Lee,Jen-Inn Chyi,Hao-Wei Chuang,Kuo-Jen Chang,Yau-Tang Gau:
  A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate.2556-2560
• 
  Jean-Baptiste Fonder,Olivier Latry,Cedric Duperrier,M. Stanislawiak,Hichame Maanane,Philippe Eudeline,Farid Temcamani:
  Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life.2561-2567
• 
  Guoxuan Qin,Yuexing Yan,Ningyue Jiang,Jianguo Ma,Pingxi Ma,Marco Racanelli,Zhenqiang Ma:
  RF characteristics of proton radiated large-area SiGe HBTs at extreme temperatures.2568-2571
• 
  Kalyan Koley,Binit Syamal,Atanu Kundu,N. Mohankumar,Chandan Kumar Sarkar:
  Subthreshold analog/RF performance of underlap DG FETs with asymmetric source/drain extensions.2572-2578
• 
  Mohammad Reza Moslemi,Mohammad Hossein Sheikhi,Kamyar Saghafi,Mohammad Kazem Moravvej-Farshi:
  Electronic properties of a dual-gated GNR-FET under uniaxial tensile strain.2579-2584
• 
  S. Mansouri,R. Bourguiga,Fahrettin Yakuphanoglu:
  Modeling of organic thin film field-effect transistors based on pentacene in saturation regime: Effect of light illumination.2585-2591
• 
  Hsien-Chin Chiu,Che-Kai Lin,Chao-Wei Lin,Chao-Sung Lai:
  Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles.2592-2596
• 
  Q. B. Tao,P. T. Lai:
  Improved performance of GeON as charge storage layer in flash memory by optimal annealing.2597-2601
• 
  Akiko Ohata,Young-Ho Bae,Sorin Cristoloveanu,Thomas Signamarcheix,J. Widiez,Bruno Ghyselen,Olivier Faynot,Laurent Clavelier:
  Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body.2602-2608
• 
  Ashraf Ahmed,Alberto Castellazzi,L. Coulbeck,M. C. Johnson:
  Circuit design and experimental test of a high power IGBT non-destructive tester.2609-2616
• 
  Yvan Avenas,Laurent Dupont:
  Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions - Comparison with infrared measurements.2617-2626
• 
  Chun-Yu Lin,Tang-Long Chang,Ming-Dou Ker:
  Investigation on CDM ESD events at core circuits in a 65-nm CMOS process.2627-2631
• 
  Li Li,Hongxia Liu,Zhaonian Yang,Linlin Chen:
  A novel co-design and evaluation methodology for ESD protection in RFIC.2632-2639
• 
  Artur Rydosz,Wojciech Maziarz,Tadeusz Pisarkiewicz,K. Domanski,Piotr Grabiec:
  A gas micropreconcentrator for low level acetone measurements.2640-2646
• 
  Han-Chang Tsai:
  Reliable study of time- and frequency-domain EMI-induced noise in Wien bridge oscillator.2647-2654
• 
  H. D. Yen,Jiann-Shiun Yuan,Ruey-Lue Wang,G. W. Huang,W. K. Yeh,F. S. Huang:
  RF stress effects on CMOS LC-loaded VCO reliability evaluated by experiments.2655-2659
• 
  John H. Lau,Tang Gong Yue:
  Effects of TSVs (through-silicon vias) on thermal performances of 3D IC integration system-in-package (SiP).2660-2669
• 
  Qianwen Chen,Cui Huang,Zheyao Wang:
  Benzocyclobutene polymer filling of high aspect-ratio annular trenches for fabrication of Through-Silicon-Vias (TSVs).2670-2676
• 
  Andrej Ivankovic,Kris Vanstreels,Daniel Vanderstraeten,Guy Brizar,Renaud Gillon,Eddy Blansaer,Bart Vandevelde:
  Comparison of experimental methods for the extraction of the elastic modulus of molding compounds used in IC packaging.2677-2684
• 
  Salomeh Tabatabaei,Ashavani Kumar,Haleh Ardebili,Peter J. Loos,Pulickel M. Ajayan:
  Synthesis of Au-Sn alloy nanoparticles for lead-free electronics with unique combination of low and high melting temperatures.2685-2689
• 
  Ming-Hung Shu,Bi-Min Hsu,Min-Chuan Hu:
  Optimal combination of soldering conditions of BGA for halogen-free and lead-free SMT-green processes.2690-2700
• 
  Dhafer Abdulameer Shnawah,Suhana Binti Mohd Said,Mohd Faizul Mohd Sabri,Irfan Anjum Badruddin,Fa Xing Che:
  Novel Fe-containing Sn-1Ag-0.5Cu lead-free solder alloy with further enhanced elastic compliance and plastic energy dissipation ability for mobile products.2701-2708
• 
  Juha Niittynen,Janne Kiilunen,Jussi Putaala,Ville Pekkanen,Matti Mäntysalo,Heli Jantunen,Donald Lupo:
  Reliability of ICA attachment of SMDs on inkjet-printed substrates.2709-2715
• 
  Hitoshi Sakurai,Keun-Soo Kim,Kiju Lee,Chang-Jae Kim,Youichi Kukimoto,Katsuaki Suganuma:
  Effects of Cu contents in flux on microstructure and joint strength of Sn-3.5Ag soldering with electroless Ni-P/Au surface finish.2716-2722
• 
  Peter Filipp Fuchs,Gerald Pinter,Maximilian Tonjec:
  Determination of the orthotropic material properties of individual layers of printed circuit boards.2723-2730
• 
  Emeka H. Amalu,Ndy N. Ekere:
  Prediction of damage and fatigue life of high-temperature flip chip assembly interconnections at operations.2731-2743
• 
  Wan Ho Song,Michael Mayer,Norman Y. Zhou,S. H. Kim,J. S. Hwang,J. T. Moon:
  Effect of EFO parameters and superimposed ultrasound on work hardening behavior of palladium coated copper wire in thermosonic ball bonding.2744-2748
• 
  Fuliang Wang,Yun Chen:
  Modeling study of thermosonic flip chip bonding process.2749-2755
• 
  Yung-Sen Lin,Jian-Zhi Xu,Shih-Wei Tien,Shih-Chan Hung,Wei-Li Yuan,Tsair-Wang Chung,Char-Ming Huang:
  Enhanced anisotropic conductive film (ACF) void-free bonding for Chip-On-Glass (COG) packages by means of low temperature plasmas.2756-2762
• 
  D. Farley,Yi Zhou,A. Dasgupta,J. W. C. DeVries:
  An adaptive Cu trace fatigue model based on average cross-section strain.2763-2772
• 
  Qingchuan He,Wenhua Chen,Jun Pan,Ping Qian:
  Improved step stress accelerated life testing method for electronic product.2773-2780

Review Paper

• 
  Mohammad Hossein Neishaburi,Zeljko Zilic:
  An infrastructure for debug using clusters of assertion-checkers.2781-2798

Research Papers

• 
  Hector Villacorta,Víctor H. Champac,Sebastià A. Bota,Jaume Segura:
  Resistive bridge defect detection enhancement under parameter variations combining Low V_DD and body bias in a delay based test.2799-2804
• 
  Hossein Aghababa,Behzad Ebrahimi,Ali Afzali-Kusha,Massoud Pedram:
  Probability calculation of read failures in nano-scaled SRAM cells under process variations.2805-2811
• 
  Mohammad Maghsoudloo,Hamid R. Zarandi,Navid Khoshavi:
  An efficient adaptive software-implemented technique to detect control-flow errors in multi-core architectures.2812-2828
• 
  Hongge Li,Jinpeng Ding,Yongjun Pan:
  Cell array reconfigurable architecture for high-efficiency AES system.2829-2836
• 
  Daniel Gil-Tomas,Joaquin Gracia-Moran,Juan-Carlos Baraza-Calvo,Luis J. Saiz-Adalid,Pedro J. Gil-Vicente:
  Studying the effects of intermittent faults on a microcontroller.2837-2846

Research Note

• 
  W. S. Lau,Peizhen Yang,S. Y. Siah,L. Chan:
  The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current.2847-2850
• 
  Yi-Shao Lai,Meng-Kai Shih,Chang-Chi Lee,Tong Hong Wang:
  Structural design guideline to minimize extreme low-k delamination potential in 40 nm flip-chip packages.2851-2855
• 
  Wang Ying,Ji Feng-li,Gao Song-song:
  Finite element analysis of thermal stress for different Cu interconnects structure.2856-2860

Book Review

• 
  Philip Hower:
  Semiconductor Power Devices, Physics, Characteristics, Reliability, by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker, Springer-Verlag, Berlin Heidelberg (2011). ISBN 978-3-642-11124-2.2861

Volume 52, Number 12, December 2012

• 
  Peter Ersland,Roberto Menozzi:
  Editorial.2863

Special Section:ROCS 2012

• 
  William J. Roesch:
  Using a new bathtub curve to correlate quality and reliability.2864-2869
• 
  Peter J. Zampardi,Cristian Cismaru,Hal Banbrook,Bin Li:
  Measuring seam/crack formation in interconnect metallization.2870-2874
• 
  Donghyun Jin,Jesús A. del Alamo:
  Impact of high-power stress on dynamic ON-resistance of high-voltage GaN HEMTs.2875-2879
• 
  William McGenn,Michael J. Uren,Johannes Benedikt,Paul J. Tasker:
  Development of an RF IV waveform based stress test procedure for use on GaN HFETs.2880-2883
• 
  David J. Cheney,Rick Deist,Brent P. Gila,Jennilee Navales,Fan Ren,Stephen J. Pearton:
  Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping.2884-2888

Regular Review Paper

• 
  Lutz Meinshausen,Kirsten Weide-Zaage,Hélène Frémont:
  Electro- and thermo-migration induced failure mechanisms in Package on Package.2889-2906

Regular Research Papers

• 
  Jiseok Kim,Siddarth A. Krishnan,Sudarshan Narayanan,Michael P. Chudzik,Massimo V. Fischetti:
  Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs.2907-2913
• 
  I. Izuddin,M. H. Kamaruddin,Anis Nurashikin Nordin,Norhayati Soin:
  Trench DMOS interface trap characterization by three-terminal charge pumping measurement.2914-2919
• 
  Yong Tang,Bo Wang,Ming Chen,Binli Liu:
  Simulation model and parameter extraction of Field-Stop (FS) IGBT.2920-2931
• 
  Jason B. Steighner,Jiann-Shiun Yuan:
  Examination of hot carrier effects of the AlGaAs/InGaAs pHEMT through device simulation.2932-2940
• 
  Jincan Zhang,Yuming Zhang,HongLiang Lv,Yimen Zhang,Shi Yang:
  The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors.2941-2947
• 
  Behrouz Afzal,Behzad Ebrahimi,Ali Afzali-Kusha,Hamid Mahmoodi:
  Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability.2948-2954
• 
  Gilson I. Wirth,Dragica Vasileska,N. Ashraf,Lucas Brusamarello,R. Della Giustina,P. Srinivasan:
  Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants.2955-2961
• 
  Jue Li,Markus Turunen,Sini Niiranen,Hongtao Chen,Mervi Paulasto-Kröckel:
  A reliability study of adhesion mechanism between liquid crystal polymer and silicone adhesive.2962-2969
• 
  I. J. Kim,H. K. Moon,J. H. Lee,Nae-Eung Lee,J. W. Jung,S. H. Cho:
  Silicon nitride etch characteristics in SF₆/O₂ and C₃F₆O/O₂ plasmas and evaluation of their global warming effects.2970-2974
• 
  Takuya Naoe,Hirotaka Komoda,Tamao Ikeuchi,Kohichi Yokoyama:
  Via high resistance failure analysis of LSI devices induced by multiple factors related to process and design.2975-2981
• 
  Emeka H. Amalu,Ndy N. Ekere:
  High-temperature fatigue life of flip chip lead-free solder joints at varying component stand-off height.2982-2994
• 
  Ryan S. H. Yang,Derek R. Braden,Guang-Ming Zhang,David M. Harvey:
  An automated ultrasonic inspection approach for flip chip solder joint assessment.2995-3001
• 
  Junchao Liu,Tielin Shi,Ke Wang,Zirong Tang,Guanglan Liao:
  Defect detection of flip-chip solder joints using modal analysis.3002-3010
• 
  I. Gershman,Joseph B. Bernstein:
  Structural health monitoring of solder joints in QFN package.3011-3016
• 
  Takuya Naoe,Hirotaka Komoda:
  Decapsulation technique using electrochemical etching for failure analysis of WLCSP n-type Si assembled module devices.3017-3021
• 
  Mustapha Faqir,Tim Batten,T. Mrotzek,S. Knippscheer,M. Massiot,M. Buchta,Hervé Blanck,Stéphane Rochette,Olivier Vendier,Martin Kuball:
  Improved thermal management for GaN power electronics: Silver diamond composite packages.3022-3025
• 
  Saeed Haji-Nasiri,Rahim Faez,Mohammad Kazem Moravvej-Farshi:
  Stability analysis in multiwall carbon nanotube bundle interconnects.3026-3034
• 
  Hélène Frémont,Geneviève Duchamp,Alexandrine Guédon-Gracia,Frédéric Verdier:
  A methodological approach for predictive reliability: Practical case studies.3035-3042
• 
  Fatemeh Jalali,Safieh Khodadoustan,Alireza Ejlali:
  Cooperative Hybrid ARQ in Solar Powered Wireless Sensor Networks.3043-3052