Silicon carbide - The latest breakthrough in high-voltage switching and rectification

ST’s portfolio ofsilicon carbide (SiC) devices inclusesSTPOWER SiC MOSFETs ranging from 650 to 2200 V with the industry’s highest junction temperature rating of 200 °C for more efficient and simplified designs, and STPOWER SiC diodes ranging from 600 to 1200 V which feature negligible switching losses and 15% lower forward voltage (V_F) than standard silicon diodes. Check our Innovation and Technology page about SiC. 

Click below to play our video, andhere to read our blog article.

  

STPOWER SiC MOSFET

Main characteristics:

• Automotive-grade (AG) qualified devices
• Very high temperature handling capability (max. T_j = 200 °C)
• Very low switching losses (minimal variation versus temperature) allowing to work at very high switching frequency
• Low on-state resistance over the temperature range
• Simple to drive
• Very fast and robust intrinsic body diode proved

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STPOWER SiC Diodes

Main characteristics:

• Very low forward conduction losses for increased efficiency
• Low switching losses for reduced size and cost of the power converter
• Soft switching behavior (low EMC impact), simplifying certification and speeding time-to market
• High forward surge capability for increased robustness and reliability
• High power integration (dual diodes) for reduced PCB form factor
• High-temperature capability with T_jmax = 175 °C
• AEC-Q101-qualified and PPAP-capable automotive-grade SiC diodes 

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