Zinc nitride (Zn3N2) is aninorganic compound ofzinc andnitrogen, usually obtained as (blue)grey crystals. It is a semiconductor. In pure form, it has the anti-bixbyite structure.
Zinc nitride can be obtained bythermally decomposing zincamide (zinc diamine)[3] in ananaerobic environment, at temperatures in excess of 200°C. The by-product of the reaction isammonia.[4]
The decomposition of Zinc Nitride into the elements at the same temperature is a competing reaction.[6] At 700 °C Zinc Nitride decomposes.[1] It has also been made by producing an electric discharge between zinc electrodes in a nitrogen atmosphere.[6][7] Thin films have been produced bychemical vapour deposition of Bis(bis(trimethylsilyl)amido]zinc with ammonia gas onto silica or ZnO coated alumina at 275 to 410 °C.[8]
The crystal structure is anti-isomorphous withManganese(III) oxide. (bixbyite).[2][7] The heat of formation is c. 24 kilocalories (100 kJ) per mol.[7] It is a semiconductor with a reported bandgap of c. 3.2eV,[9] however, a thin zinc nitride film prepared by electrolysis of molten salt mixture containing Li3N with a zinc electrode showed a band-gap of 1.01 eV.[10]
Zinc nitride reacts with lithium (produced in an electrochemical cell) by insertion. The initial reaction is the irreversible conversion into LiZn in a matrix ofbeta-Li3N. These products then can be converted reversibly and electrochemically into LiZnN and metallic Zn.[11][12]
^abMaxtead, E.B. (1921),Ammonia and the Nitrides, pp. 69–20
^abcMellor, J.W. (1964),A Comprehensive Treatise on Inorganic and Theoretical Chemistry, vol. 8, Part 1, pp. 160–161
^Maile, E.; Fischer, R. A. (Oct 2005), "MOCVD of the Cubic Zinc Nitride Phase, Zn3N2, Using Zn[N(SiMe3)2]2 and Ammonia as Precursors",Chemical Vapor Deposition,11 (10):409–414,doi:10.1002/cvde.200506383
^Pereiraa, N.; Klein, L.C.; Amatuccia, G.G. (2002), "The Electrochemistry of Zn3 N 2 and LiZnN - A Lithium Reaction Mechanism for Metal Nitride Electrodes",Journal of the Electrochemical Society,149 (3): A262,Bibcode:2002JElS..149A.262P,doi:10.1149/1.1446079
Futsuhara, M.; Yoshioka, K.; Takai, O. (1998). "Structural, electrical and optical properties of zinc nitride thin films prepared by reactive RF magnetron sputtering".Thin Solid Films.322 (1):274–281.Bibcode:1998TSF...322..274F.doi:10.1016/S0040-6090(97)00910-3.
Lyutaya, M. D.; Bakuta, S. A. (1980). "Synthesis of the nitrides of Group II elements".Powder Metallurgy and Metal Ceramics.19 (2):118–122.doi:10.1007/BF00792038.S2CID93036462.
