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Thin-film transistor

From Wikipedia, the free encyclopedia
Field-effect transistor device
This article is about TFT technology. For thin-film-transistor liquid-crystal display, seeTFT LCD.

Athin-film transistor (TFT) is a special type offield-effect transistor (FET) where the transistor is made bythin film deposition. TFTs are grown on a supporting (but non-conducting)substrate, such asglass. This differs from the conventional bulk metal-oxide-semiconductor field-effect transistor (MOSFET), where the semiconductor material typicallyis the substrate, such as asilicon wafer.[1] The traditional application of TFTs is inTFT liquid-crystal displays.

Design and manufacture

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TFTs can be fabricated with a wide variety of semiconductor materials. Because it is naturally abundant and well understood,amorphous orpolycrystalline silicon were (and still are) used as the semiconductor layer. However, because of the low mobility of amorphous silicon[2] and the large device-to-device variations found in polycrystalline silicon,[3][4][5] other materials have been studied for use in TFTs. These includecadmium selenide,[6][7]metal oxides such asindium gallium zinc oxide (IGZO) orzinc oxide,[8]organic semiconductors,[9]carbon nanotubes,[10] ormetal halide perovskites.[11]

Cross sectional diagram of 4 common thin film transistor structures

Because TFTs are grown on inert substrates, rather than on wafers, the semiconductor must be deposited in a dedicated process. A variety of techniques are used to deposit semiconductors in TFTs. These includechemical vapor deposition (CVD),atomic layer deposition (ALD), andsputtering. The semiconductor can also be deposited from solution,[12] via techniques such asprinting[13] or spray coating.[14] Solution-based techniques are hoped to lead to low-cost, mechanically flexible electronics.[15] Because typical substrates will deform or melt at high temperatures, the deposition process must be carried out under relatively low temperatures compared to traditional electronic material processing.[16]

Some wide band gap semiconductors, most notable metal oxides, are optically transparent.[17] By also employing transparent substrates, such as glass, and transparentelectrodes, such asindium tin oxide (ITO), some TFT devices can be designed to be completely optically transparent.[18] Such transparent TFTs (TTFTs) could be used to enablehead-up displays (such as on a car windshield).The first solution-processed TTFTs, based onzinc oxide, were reported in 2003 by researchers atOregon State University.[19] The Portuguese laboratory CENIMAT at theUniversidade Nova de Lisboa has produced the world's first completely transparent TFT at room temperature.[20] CENIMAT also developed the first paper transistor,[21] which may lead to applications such as magazines and journal pages with moving images.

ManyAMOLED displays use LTPO (Low-temperature Poly-Crystalline Silicon and Oxide) TFT transistors. These transistors offer stability at low refresh rates, and variable refresh rates, which allows for power saving displays that do not show visual artifacts.[22][23][24] Large OLED displays usually use AOS (amporphous oxide semiconductor) TFT transistors instead, also called oxide TFTs[25] and these are usually based on IGZO.[26]

Applications

[edit]

The best known application of thin-film transistors is inTFT LCDs, an implementation ofliquid-crystal display technology. Transistors are embedded within the panel itself, reducingcrosstalk betweenpixels and improving image stability.

As of 2008[update], many colorLCD TVs and monitors use this technology. TFT panels are frequently used indigitalradiography applications in general radiography. A TFT is used in both direct and indirect capture[jargon] as a base for the image receptor inmedical radiography.

As of 2013[update], all modernhigh-resolution and high-qualityelectronic visual display devices use TFT-basedactive matrix displays.[27]

AMOLED displays also contain a TFT layer foractive-matrix pixel addressing of individualorganic light-emitting diodes.

The most beneficial aspect of TFT technology is its use of a separate transistor for each pixel on the display. Because each transistor is small, the amount of charge needed to control it is also small. This allows for very fast re-drawing of the display.

Structure of a TFT-display matrix

[edit]

This picture does not include the actual light-source (usuallycold-cathode fluorescent lamps orwhite LEDs), just the TFT-display matrix.

Cut through an TFT display.
Cut through an TFT display.
  • 1 – Glass plates
  • 2/3 – Horizontal and vertical polarisers
  • 4 – RGB colour mask
  • 5/6 – Horizontal and vertical command lines
  • 7 – Rubbed polymer layer
  • 8 – Spacers
  • 9 – Thin-film transistors
  • 10 – Front electrode
  • 11 – Rear electrodes

History

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In February 1957,John Wallmark ofRCA filed a patent for a thin film MOSFET in which germanium monoxide was used as a gate dielectric.Paul K. Weimer, also of RCA implemented Wallmark's ideas and developed the thin-filmtransistor (TFT) in 1962, a type of MOSFET distinct from the standard bulk MOSFET. It was made withthin films ofcadmium selenide andcadmium sulfide. In 1966, T.P. Brody and H.E. Kunig atWestinghouse Electric fabricatedindium arsenide (InAs) MOS TFTs in bothdepletion and enhancement modes.[28][29][30][31][32][33]

The idea of a TFT-basedliquid-crystal display (LCD) was conceived byBernard J. Lechner ofRCA Laboratories in 1968.[34] Lechner, F.J. Marlowe, E.O. Nester and J. Tults demonstrated the concept in 1968 with an 18x2 matrixdynamic scattering LCD that used standard discrete MOSFETs, as TFT performance was not adequate at the time.[35] In 1973,T. Peter Brody, J. A. Asars and G. D. Dixon atWestinghouse Research Laboratories developed a CdSe (cadmium selenide) TFT, which they used to demonstrate the first CdSethin-film-transistor liquid-crystal display (TFT LCD).[31][36] The Westinghouse group also reported on operational TFTelectroluminescence (EL) in 1973, using CdSe.[37] Brody and Fang-Chen Luo demonstrated the first flatactive-matrix liquid-crystal display (AM LCD) using CdSe in 1974, and then Brody coined the term "active matrix" in 1975.[34] However, mass production of this device was never realized, due to complications in controlling the compound semiconductor thin film material properties, and device reliability over large areas.[31]

A breakthrough in TFT research came with the development of theamorphous silicon (a-Si) TFT by P.G. le Comber, W.E. Spear and A. Ghaith at theUniversity of Dundee in 1979. They reported the first functional TFT made from hydrogenated a-Si with asilicon nitride gatedielectric layer.[31][38] The a-Si TFT was soon recognized as being more suitable for a large-area AM LCD.[31] This led to commercialresearch and development (R&D) of AM LCD panels based on a-Si TFTs in Japan.[39]

By 1982,pocket TVs based on AM LCD technology were developed in Japan.[40] In 1982,Fujitsu's S. Kawaifabricated an a-Sidot-matrix display, andCanon's Y. Okubo fabricated a-Sitwisted nematic (TN) andguest-host LCD panels. In 1983,Toshiba's K. Suzuki produced a-Si TFT arrays compatible withCMOS (complementary metal–oxide–semiconductor)integrated circuits (ICs), Canon's M. Sugata fabricated an a-Sicolor LCD panel, and a jointSanyo andSanritsu team including Mitsuhiro Yamasaki, S. Suhibuchi and Y. Sasaki fabricated a 3-inch a-SI color LCD TV.[39]

The first commercial TFT-based AM LCD product was the 2.1-inchEpson[41][42][43] ET-10[37] (Epson Elf), the first color LCD pocket TV, released in 1984.[44] In 1986, aHitachi research team led by Akio Mimura demonstrated alow-temperature polycrystalline silicon (LTPS) process for fabricatingn-channel TFTs on asilicon-on-insulator (SOI), at a relatively low temperature of 200 °C.[45] AHosiden research team led by T. Sunata in 1986 used a-Si TFTs to develop a 7-inch color AM LCD panel,[46] and a 9-inch AM LCD panel.[47] In the late 1980s, Hosiden supplied monochrome TFT LCD panels toApple Computer.[31] In 1988, aSharp research team led by engineer T. Nagayasu used hydrogenated a-Si TFTs to demonstrate a 14-inch full-color LCD display,[34][48] which convinced theelectronics industry that LCD would eventually replacecathode-ray tube (CRT) as the standardtelevisiondisplay technology.[34] The same year, Sharp launched TFT LCD panels fornotebook PCs.[37] In 1992, Toshiba andIBM Japan introduced a 12.1-inch colorSVGA panel for the first commercial color laptop byIBM.[37]

TFTs can also be made out of indium gallium zinc oxide (IGZO). TFT-LCDs with IGZO transistors first showed up in 2012, and were first manufactured by Sharp Corporation. IGZO allows for higher refresh rates and lower power consumption.[49][50] In 2021, the first flexible 32-bit microprocessor was manufactured using IGZO TFT technology on apolyimide substrate.[51]

See also

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References

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