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TO-3

From Wikipedia, the free encyclopedia
Metal can semiconductor package for power semiconductors
Size comparison ofBJT transistor packages, from left to right:SOT-23,TO-92,TO-126, TO-3
3D model of TO-3 package

In electronics,TO-3 is a designation for a standardized metalsemiconductor package used for power semiconductors, includingtransistors,silicon controlled rectifiers, and,integrated circuits.TO stands for "Transistor Outline" and relates to a series of technical drawings produced byJEDEC.[1]

The TO-3 case has a flat surface which can be attached to aheatsink, normally via a thermally conductive but electrically insulating washer. The design originated atMotorola around 1955 from a group headed byDr. Virgil E. Bottom.[2] who was director of research of the Motorola Semiconductor Division. The first use of this design was for the germaniumalloy-junction power transistor 2N176 – the first power transistor to be put into quantity production.[2][3] The lead spacing was originally intended to allow plugging the device into a then-commontube socket.[4]

Typical applications

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Typical TO-3 mounting profile, with insulator from chassis

The metal package can be attached to a heat sink, making it suitable for devices dissipating several watts of heat.Thermal compound is used to improve heat transfer between the device case and the heat sink. Since the device case is one of the electrical connections, aninsulator may be required to electrically isolate the component from the heatsink. Insulating washers may be made ofmica or other materials with goodthermal conductivity.

The case is used with high-power and high-current devices, on the order of a few tens of amperes current and up to a hundred watts of heat dissipation. The case surfaces are metal for good heat conductivity and durability. The metal-to-metal and metal-to-glass joints providehermetic seals that protect the semiconductor from liquids and gases.

Compared with equivalent plastic packages, the TO-3 is more costly. The spacing and dimensions of the case leads make it unsuitable for higher frequency (radio frequency) devices.

Construction

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Inside of an MJ1000Darlington transistor in TO-3 package

The semiconductor die component is mounted on a raised platform on a metal plate, with the metal can welded on top of it; providing high heat conductivity and durability. The metal case is connected to the internal device and the leads are connected to the die with bonding wires.

The TO-3 package consists of a diamond-shaped base plate with diagonals of 40.13 mm (1.580 in) and 27.17 mm (1.070 in). The plate has two mounting holes on the long diagonal, with the centers spaced 30.15 mm (1.187 in) apart.[5] The cap attached to one side of the plate brings the total height to up to 11.43 mm (0.450 in). Two pins on the other side of the plate are isolated from the package by individual glass-metal seals. The metal case forms the third connection (in the case of abipolar junction transistor this is typically the collector).

Dimensions

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Dimensions TO-3 package in mm[1]

Variants

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Power amplifier integrated circuit (CEMI UL1403) in a TO-3 package variant

TO-3 package variants for integrated circuits can have more than two leads. The height of the cap and the thickness of the leads differs between variants of the TO-3 package.

TO-41

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AD133 transistor in an IEC C14B/B28 package, similar to TO-41 but with a third pin connected to the case (here the soldering pads have been cut off)

The two pins of the TO-41 package end in soldering pads with holes in them to make it easier to solder wires to the pins forpoint-to-point construction (as opposed to soldering a TO-3 package on aprinted circuit board). Otherwise the TO-41 package has the same dimensions as the TO-3 package.[6] Some variants of the TO-41 package have a third pin with a soldering pad connected to the case (e.g. AD133,[7]: 64  AUY21[7]: 69 ). This 3-pin package was standardized by IEC as C14B/B28.[7]: 215 

TO-204

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TO-204 is intended to replace previous definitions of flange-mounted packages with a 10.92 mm (0.430 in) pin spacing.[8][9] The different outlines are now defined as variants of TO-204: TO-3 is renamed to TO-204-AA, TO-41 to TO-204-AB. A new package with a reduced maximum height of 7.62 mm (0.300 in) is added as TO-204-AC. Two additional variants specify pins thicker than the original 1.02 mm (0.040 in) to allow higher currents: 1.27 mm (0.050 in) for TO-204-AD and 1.52 mm (0.060 in) for TO-204-AE.

National standards

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Standards organizationStandardDesignation for
TO-3TO-41
JEDECJEP95[9]TO-204-AATO-204-ABTO-204-ACTO-204-AD
IECIEC 60191[a][7]: 215 C14A/B18C14A/B20C14B/B18
DINDIN 41872[10][11]3A23B2[b]
EIAJ /JEITAED-7500A[a][12]TC-3/TB-3TC-3A/TB-3[b]
British StandardsBS 3934[a][13][14]SO-5A/SB2-2SO-5B/SB2-2[b]
GosstandartGOST 18472—88[15]KT-9[c]KT-9B
RosstandartGOST R 57439[16]KT-9C
Kombinat Mikroelektronik ErfurtTGL 11811[17]EebEea
TGL 26713/11[17]L2A2L2A1
  1. ^abcThese standards have separate drawings for the package case and the base.
  2. ^abcThe maximum height is 8.63 mm (0.340 in).
  3. ^Russian:КТ-9

Common components in a TO-3 package

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Common voltage regulator integrated circuits:

  • LM317, voltage regulator
  • LM78xx, voltage regulator
  • LM340, voltage regulator

Common transistors:

  • 2N3055, NPN power transistor
  • MJ2955, PNP power transistor (not to be confused with a 2N2955 which is a small signal PNP transistor[18])
  • KD503, NPN power transistor

See also

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  • TO-66, smaller package of similar shape
  • TO-220 plastic case used for power semiconductors with similar ratings to TO-3 cases

References

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  1. ^ab"JEDEC TO-3 package specification"(PDF).JEDEC. Archived fromthe original(PDF) on June 18, 2017.
  2. ^abBottom, Virgil (November 1992)."XIII Phoenix 1953–1958".FROM POSSUM HOLLER TO SINGAPORE The Autobiography of VIRGIL E. BOTTOM. Self published. p. 177. Archived fromthe original(DOC) on 2016-03-15. Retrieved2022-08-22.
  3. ^Ward, Jack (2007)."Motorola 2N176".www.semiconductormuseum.com. Retrieved2022-08-22.
  4. ^Greenburg, Ralph (2008)."Transistor Museum Oral History".www.semiconductormuseum.com. Retrieved2021-07-14.
  5. ^Hubert Biagi."Mounting Considerations for TO-3 Packages"(PDF). Burr-Brown. p. 3. Retrieved2021-06-30.
  6. ^"TO-41"(PDF). JEDEC. Archived fromthe original(PDF) on 2016-04-10. Retrieved2021-06-21.
  7. ^abcd"Semiconductors"(PDF).Pro Electron. 1978. Retrieved2021-06-17.
  8. ^"Index by Device Type of Registered Transistor Outlines (TO)".JEDEC Publication No. 95(PDF). JEDEC. October 2010. Retrieved2021-07-13.
  9. ^ab"Flange Mounted Header Family 0.430 Pin Spacing".JEDEC Publication No. 95(PDF). JEDEC. November 1982. pp. 174–177. Retrieved2021-07-13.
  10. ^"NPN Transistor for Powerful AF Output Stages 2N3055"(PDF). Siemens. Retrieved2021-08-20.
  11. ^"Silicon NPN Power Transistor BU546"(PDF). Telefunken. Retrieved2021-08-20.
  12. ^"EIAJ ED-7500A Standards for the Dimensions of Semiconductor Devices"(PDF). JEITA. 1996. Retrieved2021-06-14.
  13. ^"Semiconductor and Photoelectric Devices"(PDF). Mullard. 1968. p. 539. Retrieved2021-06-14.
  14. ^"Mullard Technical Handbook Book 1 Part 1"(PDF). Mullard. 1974. p. 516. Archived fromthe original(PDF) on 2021-07-01. Retrieved2021-06-14.
  15. ^"ГОСТ 18472—88 ПРИБОРЫ ПОЛУПРОВОДНИКОВЫЕ - Основные размеры" [GOST 18472—88 Semiconductor devices - basic dimensions](PDF) (in Russian). Rosstandart. 1988. p. 42. Retrieved2021-06-17.
  16. ^"ПРИБОРЫ ПОЛУПРОВОДНИКОВЫЕ - Основные размеры" [Semiconductor devices - basic dimensions](PDF) (in Russian). Rosstandart. 2017. pp. 50–52. Retrieved2021-06-17.
  17. ^ab"TGL 26713/11: Gehäuse für Halbleiterbauelemente - Bauform L"(PDF) (in German). Leipzig: Verlag für Standardisierung. June 1988. Retrieved2021-06-15.
  18. ^Kluwers Internationale Transistor Gids (4 ed.). Kluwer Technische Boeken B.V. 1991. p. 55.ISBN 9020125192.

External links

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Wikimedia Commons has media related toTO-3 transistor packages andTransistor packages.
Singlediode
  • DO-201 (DO-27)
  • DO-204 (DO-7 / DO-26 / DO-35 / DO-41)
  • DO-213 (MELF / SOD-80 / LL34)
  • DO-214 (SMA / SMB / SMC)
  • SOD (SOD-123 / SOD-323 / SOD-523 / SOD-923)
3...5-pin
Single row
Dual row
Quad row
Grid array
Wafer
Related topics
It is relatively common to find packages that contain other components than their designated ones, such as diodes orvoltage regulators in transistor packages, etc.
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