Movatterモバイル変換


[0]ホーム

URL:


Jump to content
WikipediaThe Free Encyclopedia
Search

Pentode transistor

From Wikipedia, the free encyclopedia
Diagram of pentode transistor as described by Lawrence E. Dickens in their patent, with a cross section view and alternative design with interposed layer of SiO₂. Gates are markedG₁,G₂ andG₃.

Apentode transistor is anytransistor having five active terminals.

Early pentode transistors

[edit]

One early pentode transistor was developed in the early 1950s as an improvement over thepoint-contact transistor.

  • A point-contact transistor having three emitters. It became obsolete in the middle 1950s.

Pentode field-effect transistors having 3 gates, similar to vacuum tube pentodes have also been described[1]

Modern pentode transistors

[edit]

References

[edit]
  1. ^US Patent 4,104,673 August 1,1978
Semiconductor
devices
MOS
transistors
Other
transistors
Diodes
Other
devices
Voltage regulators
Vacuum tubes
Vacuum tubes (RF)
Cathode ray tubes
Gas-filled tubes
Adjustable
Passive
Reactive
Other devices
Retrieved from "https://en.wikipedia.org/w/index.php?title=Pentode_transistor&oldid=1312167551"
Category:

[8]ページ先頭

©2009-2025 Movatter.jp