 | |
| Names | |
|---|---|
| Systematic IUPAC name Mercury telluride | |
| Other names Mercuric telluride, mercury(II) telluride | |
| Identifiers | |
3D model (JSmol) | |
| ChemSpider | |
| ECHA InfoCard | 100.031.905 |
| EC Number |
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| |
| |
| Properties | |
| HgTe | |
| Molar mass | 328.19 g/mol |
| Appearance | near black cubic crystals |
| Density | 8.1 g/cm3 |
| Melting point | 670°C |
| Structure | |
| Sphalerite,cF8 | |
| F43m, No. 216 | |
Except where otherwise noted, data are given for materials in theirstandard state (at 25 °C [77 °F], 100 kPa). | |
Mercury telluride (HgTe) is a binary chemical compound ofmercury andtellurium. It is asemi-metal related to the II-VI group ofsemiconductor materials. Alternative names are mercuric telluride and mercury(II) telluride.
HgTe occurs in nature as the mineral formcoloradoite.
All properties are at standard temperature and pressure unless stated otherwise. The lattice parameter is about 0.646 nm in the cubic crystalline form. The bulk modulus is about 42.1 GPa. The thermal expansion coefficient is about 5.2×10−6/K. Static dielectric constant 20.8, dynamic dielectric constant 15.1.Thermal conductivity is low at 2.7 W·m2/(m·K). HgTe bonds are weak leading to low hardness values. Hardness 2.7×107 kg/m2.[1][2][3]
N-type doping can be achieved with elements such asboron,aluminium,gallium, orindium. Iodine and iron will also dope n-type. HgTe is naturally p-type due to mercury vacancies. P-type doping is also achieved by introducing zinc, copper, silver, or gold.[1][2]
Mercury telluride was the firsttopological insulator discovered, in 2007. Topological insulators cannot support anelectric current in the bulk, butelectronic states confined to the surface can serve ascharge carriers.[5]
HgTe bonds are weak. Theirenthalpy of formation, around −32kJ/mol, is less than a third of the value for the related compound cadmium telluride. HgTe is easily etched by acids, such ashydrobromic acid.[1][2]
Bulk growth is from a mercury and tellurium melt in the presence of a high mercury vapour pressure. HgTe can also be grown epitaxially, for example, by sputtering or bymetalorganic vapour phase epitaxy.[1][2]
Nanoparticles of mercury telluride can be obtained via cation exchange from cadmium telluride nanoplatelets.[6]
