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List of semiconductor fabrication plants

From Wikipedia, the free encyclopedia
Fabs present & past worldwide

Semiconductor fabrication plants are factories whereintegrated circuits (ICs), also known asmicrochips, are manufactured. They are either operated byIntegrated Device Manufacturers (IDMs) that design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or bypure play foundries that manufacture designs from fabless companies and do not design their own ICs. Some pure play foundries likeTSMC offer IC design services, and others, likeSamsung, design and manufacture ICs for customers, while also designing, manufacturing and selling their own ICs.

This list isincomplete; you can help byadding missing items.(September 2011)

Glossary of terms

[edit]
  • Wafer size – largest wafer diameter that a facility is capable of processing. (Semiconductor wafers are circular.)
  • Process technology node – size of the smallest features that the facility is capable of etching onto the wafers.
  • Production capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month.
  • Utilization – the number of wafers that a manufacturing plant processes in relation to its production capacity.
  • Technology/products – Type of product that the facility is capable of producing, as not all plants can produce all products on the market.

Open plants

[edit]
This section needs to beupdated. Please help update this article to reflect recent events or newly available information.(March 2025)

Operating fabs include foundries fromTSMC,GlobalFoundries, Silex Microsystems,Tower Semiconductor,Advanced Micro Foundry,VTT,SilTerra andIHP Microelectronics amongst others.[1]

CompanyPlant namePlant locationPlant cost (in US$ billions)Started productionWafer size (mm)Process technologynode (nm)Production capacity (Wafers/Month)Technology / products
STMicroelectronicsFrance, Crolles2003200, 30028, 55, 65Foundry, SiGe BiCMOS, FD-SOI
STMicroelectronicsAG200, AG300Italy, Agrate Brianza200, 300Foundry, MEMS
nLIGHTUnited States, Washington, Vancouver2001Laser diodes
Safran Sensing Technologies Switzerland (formerly Colibrys)Switzerland,Yverdon-les-Bains150Foundry,MEMS
Pure WaferUnited States,Arizona,Prescott[2]Foundry
EM MicroelectronicSwitzerland,La Tène, Neuchâtel1975180, 110Foundry, microcontrollers, ASIC, RFID, smart cards
UMCHe JianFab 8NChina,
Suzhou
0.750,[3] 1.2, +0.52003, May[3]2004000–1000, 500, 350, 250, 180, 11077,000Foundry
UMCFab 6ATaiwan,
Hsinchu
0.35[3]1989[3]15045031,000Foundry
UMCFab 8ABTaiwan,
Hsinchu
1[3]1995[3]20025067,000[4]Foundry
UMCFab 8CTaiwan,
Hsinchu
1[3]1998[3]200350–11037,000Foundry
UMCFab 8DTaiwan,
Hsinchu
1.5[3]2000[3]2009031,000Foundry
UMCFab 8ETaiwan,
Hsinchu
0.96[3]1998[3]20018037,000Foundry
UMCFab 8FTaiwan,
Hsinchu
1.5[3]2000[3]20015040,000Foundry
UMCFab 8STaiwan,
Hsinchu
0.8[3]2004[3]200350–25031,000Foundry
UMCFab 12ATaiwan,
Tainan
4.65, 4.1, 6.6, 7.3[3]2001, 2010, 2014, 2017[3]30028, 1487,000[4]Foundry
UMCFab 12iSingapore3.7[3]2004[3]300130–4053,000Foundry
UMC – United SemiconductorFab 12XChina,
Xiamen
6.2201630055–2819,000-25,000 (2021)Foundry
UMCUSJC(formerly MIFS)(formerlyFujitsu)Fab 12M (original Fujitsu installations)[5]Japan,
Mie Prefecture
1974150, 200, 300[6]90–4033,000Foundry
Texas InstrumentsMihoJapan,
Ibaraki,
Miho
200350,250[7]40,000[8]Analog,DLP[9]
Texas Instruments (formerlySpansion)Aizu[10]Japan,
Fukushima,
Aizuwakamatsu
200Analog
Texas Instruments (formerlyNational Semiconductor)MFAB[11]United States,
Maine,
South Portland
0.9321997200350,250,180Analog
Texas Instruments (formerlyMicron) (formerlyIM Flash)LFABUnited States,
Utah,
Lehi
1.3[12] (+ 3–4, future)[13]300654570,000Analog, mixed signal, logic

NAND FLASH (former),3D XPoint (former)

Texas InstrumentsRFAB1[14]United States,
Texas,
Richardson
2009300250,18020,000[15]Analog
Texas InstrumentsRFAB2United States,
Texas,
Richardson
2022300Analog
Texas InstrumentsDMOS5United States,
Texas,
Dallas
1984200250,180Analog,DLP
Texas InstrumentsDMOS6United States,
Texas,
Dallas
20003001304522,000[16]Logic, Analog
Texas InstrumentsDFABUnited States,
Texas,
Dallas
1966150, 200Mixed Signal, Analog
Texas InstrumentsSFABUnited States,
Texas,
Sherman
1965150Analog
Texas InstrumentsFFABGermany,
Bavaria,
Freising
2001000,18037,500 (450,000 per year)[17]Analog
Texas Instruments(formerly SMIC – Cension)CFABChina,
Chengdu
20030,000[18]Analog
Tsinghua Unigroup[19]China,
Nanjing
10 (first phase), 30Planned300100,000 (first phase)3D NAND
Tsinghua Unigroup – XMC (formerly Xinxin)[20]Fab 1China,
Wuhan[3]
1.9200830090, 65, 60, 50, 45, 40, 3230,000[21]Foundry,NOR
Tsinghua UnigroupYangtze Memory Technologies (YMTC) – XMC (formerly Xinxin)[20][21][19]Fab 2China,
Wuhan
242018[3]30020200,0003D NAND
ChangXin Memory – (formerly Innotron Memory)Fab 1[22]China,
Hefei
8[23]2019[24]3001920,000–40,000DRAM
SMICS1 Mega Fab (S1A/S1B/S1C)[25]China,
Shanghai
20035090115,000[26]Foundry
SMICS2 (Fab 8)[25]China,
Shanghai
30045/40–32/2820,000Foundry
SMIC – SMSCSN1[25]China,
Shanghai
102020[27]3001470,000[27]Foundry
SMICB1 Mega Fab (Fab 4, Fab 6)[25]China,
Beijing
200430018090/5552,000Foundry
SMICB2A[25]China,
Beijing
3.59[28]201430045/40–32/2841,000Foundry
SMICFab 15[25]China,
Shenzhen
20142003509055,000Foundry
SMICFab 7[25]China,
Tianjin
20042003509060,000[29]Foundry
SMICJingchengChina,
Beijing
7.7[30]Under construction30028100,000Foundry
SMICLingangChina,
Shanghai
8.87[31]Under construction30028100,000Foundry
SMICShenzhenChina,
Shenzhen
2.35[32]Under construction3002840,000Foundry
SMICXiqingChina,
Tianjin
7.5[33]Under construction30028100,000Foundry
Wuxi Xichanweixin (formerlySMICLFoundry [de])(formerlyLFoundry [de])(formerlyMicron)[34] (formerlyTexas Instruments)LFItaly,
Abruzzo,
Avezzano
19952001809040,000
NanyaFab 2Taiwan,
Linkou
0.82000200[35]17530,000DRAM
NanyaFab 3A[36]Taiwan,
New Taipei City[37]
1.85[38]201830070-2034,000[39]DRAM
NanyaTaiwan,
New Taipei City[40]
10.66Under construction3001015,000–45,000DRAM
MESA+ InstituteNANOLABNetherlands,
Enschede
Academic research, R&D activities, pilot production for MEMS, Photonics, Microfluidics
MicronFab 4[41]United States,
Idaho,
Boise
300R&D
Micron (formerly Dominion Semiconductor)Fab 6United States,
Virginia,
Manassas
19973002570,000DRAM,NAND FLASH,NOR
Micron (formerly TECH Semiconductor)Fab 7 (formerly TECH Semiconductor, Singapore)[42]Singapore30060,000NAND FLASH
Micron(formerlyIM Flash)[43]Fab 10[44]Singapore3201130025140,000[45]NAND FLASH
Micron(formerlyInotera)Fab 11[46]Taiwan,
Taoyuan
30020 and under125,000[47]DRAM
MicronFab 13[48]Singapore200NOR
MicronSingapore[49]200NOR Flash
MicronMicron Semiconductor AsiaSingapore[49]
MicronChina,
Xi'an[49]
Micron (formerlyElpida Memory)Fab 15 (formerly Elpida Memory, Hiroshima)[41][49]Japan,
Hiroshima
30020 and under100,000DRAM
Micron(formerly Rexchip)Fab 16 (formerly Rexchip, Taichung)[41]Taiwan,
Taichung
30030 and under80,000DRAM, FEOL
Micron(formerly Cando)Micron Memory Taiwan[49]Taiwan,
Taichung
?, 2018300DRAM, BEOL
MicronA3Taiwan,
Taichung[50]
Under construction300DRAM
IntelD1BUnited States,
Oregon,
Hillsboro
199630022, 14, 10Microprocessors[51]
IntelD1C[52][51]United States,
Oregon,
Hillsboro
200130022, 14, 10Microprocessors[51]
IntelD1D[52][51]United States,
Oregon,
Hillsboro
200330014, 10, 7Microprocessors[51]
IntelD1X[53][51]United States,
Oregon,
Hillsboro
201330014, 10, 7Microprocessors[51]
IntelFab 12[52][51]United States,
Arizona,
Chandler
199630065, 22, 14Microprocessors &chipsets[51]
IntelFab 32[52][54]United States,
Arizona,
Chandler
3200730045
IntelFab 32[52][51]United States,
Arizona,
Chandler
200730032, 22Microprocessors[51]
IntelFab 42[55][56][51]United States,
Arizona,
Chandler
10[57]2020[58]30010, 7Microprocessors[51]
IntelFab 52, 62[59][60]United States,
Arizona,
Chandler
20[59]2024[59]Microprocessors[59]
IntelFab 11x[52][51]United States,
New Mexico,
Rio Rancho
200230045, 32Microprocessors[51]
Intel(formerlyMicron)(formerlyNumonyx)(formerlyIntel)Fab 18[61]Israel,
Southern District,
Kiryat Gat
1996200, 300180, 90, 65, 45Microprocessors and chipsets,[62]NOR flash
IntelFab 10[52]Ireland,
County Kildare,
Leixlip
1994300
IntelFab 14[52]Ireland,
County Kildare,
Leixlip
1998300
IntelFab 24[52][51]Ireland,
County Kildare,
Leixlip
200430090, 65, 14[63]Microprocessors, Chipsets and Comms[51]
IntelFab 28[52][51]Israel,
Southern District,
Kiryat Gat
200830045, 22, 10Microprocessors[51]
IntelFab 38[64]Israel,
Southern District,
Kiryat Gat
Under construction300Microprocessors[51]
IntelFab 68[52][65]China,
Dalian
2.5201030065[66]30,000–52,000Microprocessors (former),VNAND[51]
Costa Rican Ministry of Innovation, Science, Technology and TelecommunicationsCentro de Exelencia, Distrito Tecnologico T24Costa Rica,
San Jose,
San Jose
0.5Under Construction30020 and underResearch on Foundry, AI BEOL & microprocessors
Tower Semiconductor(formerlyMaxim)(formerlyPhilips)(formerlyVLSI)Fab 9[67][68]United States,
Texas,
San Antonio
200320018028,000Foundry,AlBEOL, Power,RFAnalog
Tower Semiconductor (formerlyNational Semiconductor)Fab 1[69]Israel,
Northern District,
Migdal HaEmek
0.235[3]1989, 1986[3]1501000–35014,000Foundry, Planarized BEOL,W and OxideCMP,CMOS, CIS, Power,Power Discrete
Tower SemiconductorFab 2[69]Israel,
Northern District,
Migdal HaEmek
1.226[3]2003200180–13051,000[3]Foundry,Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power,Power Discrete,MEMS, RFCMOS
Tower Semiconductor (formerlyJazz Technologies)(formerlyConexant)(formerlyRockwell)Fab 3,[69] Newport Beach[3]United States,
California,
Newport Beach
0.165[3]1967, 1995[3]200500-13025,000[3]Foundry, Al BEOL,SiGe, EPI
Tower SemiconductorTPSCo (formerlyPanasonic)Fab 5,[69] Tonami[70]Japan,
Tonami
1994200500–130Foundry,Analog/Mixed-Signal, Power, Discrete,NVM,CCD
Tower SemiconductorTPSCo (formerlyPanasonic)Fab 7,[69] Uozu[70]Japan,
Uozu
198430065.45Foundry, CMOS, CIS, RFSOI,Analog/Mixed-Signal
Tower SemiconductorTPSCo (formerlyPanasonic)Fab 6,[69] Arai[70]Japan,
Arai
1976200130–110Foundry,Analog/Mixed-Signal, CIS, NVM,Thick CuRDL
Nuvoton[71]Fab2Taiwan,
Hsinchu
1501000-35045,000[71]Generic Logic, Mixed Signal (Mixed Mode),High Voltage,Ultra High Voltage,Power Management,Mask ROM (Flat Cell),Embedded Logic, Non-Volatile Memory,IGBT,MOSFET,Biochip, TVS,Sensor
ISROSCL[72]India,
Mohali
2006200180MEMS, CMOS, CCD, N.S.
STAR-C[73][74]MEMS[74]India,
Bangalore
19961501000–500MEMS
STAR-C[73][74]CMOS[74]India,
Bangalore
19961501000–500CMOS
GAETEC[73][75]GaAs[75]India,
Hyderabad
1996150700–500MESFET
BAE Systems(formerlySanders)United States,
New Hampshire,
Nashua[3]
1985[3]100, 150140, 100, 70, 50MMIC,GaAs, GaN-on-SiC, foundry
Qorvo (formerlyRF Micro Devices)United States,
North Carolina,
Greensboro[76]
100,1505008,000SAW filters,GaAsHBT,GaAs pHEMT,GaN
Qorvo (formerlyTriQuint Semiconductor)(formerlyMicron) (formerlyTexas Instruments) (formerly TwinStar Semiconductor)United States,
Texas,
Richardson[76]
0.51996100, 150, 200350, 250, 150, 908,000DRAM (former),BAW filters,power amps,GaAs pHEMT, GaN-on-SiC
Qorvo (formerlyTriQuint Semiconductor)United States,
Oregon,
Hillsboro[76]
100, 150500Power amps,GaAs
Apple(formerlyMaxim)(formerlySamsung)X3[77]United States,
California,
San Jose
?, 1997, 2015[78]600–90
Analog Devices (formerlyMaxim Integrated)MaxFabNorth[79]United States,
Oregon,
Beaverton
(+1, future)[80]
Rohm[81](formerlyRenesas)Shiga FactoryJapan200150IGBT, MOSFET, MEMS
Rohm (Lapis Semiconductor)(formerly Oki Semiconductor)(Oki Electric Industry)[81][82]MiyasakiJapan150MEMS
Rohm (Lapis Semiconductor)[81]Building No.1Japan1961[83]Transistors
Rohm (Lapis Semiconductor)[81]Building No.2Japan1962[83]Transistors
Rohm (Lapis Semiconductor)[81]Building No.3Japan1962[83]Transistors
Rohm (Lapis Semiconductor)[81]Building No.4Japan1969[83]Transistors
Rohm (Lapis Semiconductor)[81]Chichibu PlantJapan1975[83]DRAM
Rohm (Lapis Semiconductor)[81]VLSI Laboratory No. 1Japan1977[83]VLSI
Rohm (Lapis Semiconductor)[81]VLSI Laboratory No. 2Japan1983[83]
Rohm (Lapis Semiconductor)[81]VLSI Laboratory No. 3Japan1983[83]DRAM
Rohm (Lapis Semiconductor)[81]Thailand1992[83]
Rohm (Lapis Semiconductor)[81]ULSI Laboratory No. 1Japan1992[83]500DRAM
Rohm (Kionix)[84] (formerlyRenesas Kyoto)KyotoJapan,
Kyoto
200MEMS
Fuji Electric[85]HokurikuJapan,
Toyama prefecture
Fuji Electric[86]Matsumoto[87]Japan,
Nagano prefecture
100, 1502000–100020,000CMOS. BiCMOS, bipolar, ASICs, discrete
FujitsuKawasakiJapan,
Kawasaki
1966[88]
FujitsuKumagaya Plant[89]Japan,
Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801
1974
Fujitsu[90]Suzaka PlantJapan,
Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501
Dynex SemiconductorLincoln, United Kingdom1956101.6, 150Power Semiconductors
Denso(formerlyFujitsu)Iwate Plant[91][6][87]Japan,
Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593
125, 150, 2001500–350100,000CMOS, MOS, bipolar
Denso[92]Denso Iwate[93][94][95]Japan,
Iwate Prefecture, Kanegasaki-cho
0.088Under construction, 2019, May (planned)Semiconductor wafers and sensors(since June 2017)
Canon Inc.Oita[96]Japan
Canon Inc.Kanagawa[97]Japan
Canon Inc.Ayase[96]Japan
Sharp CorporationFukuyama[98][87]Japan125, 150, 2001000, 800, 60085,000CMOS
Japan Semiconductor

[99]

IwateJapan
Japan Semiconductor[99]OitaJapan
Japan Advanced Semiconductor Manufacturing, Inc[100]KumamotoJapan20+202430040, 22/28, 12/16 and 6/7100,000+
KioxiaYokkaichi Operations[101][102]Japan,
Yokkaichi
1992173,334[103][104][105][106]Flash Memory
Kioxia/SanDiskY5 Phase 1 (at Yokkaichi Operations)Japan, 800 Yamanoisshikicho, Yokkaichi, Mie[107]2011Flash
Kioxia/SanDiskY5 Phase 2[107] (at Yokkaichi Operations)Japan,
Mie
201130015[108]Flash
Kioxia[109]Y3 (at Yokkaichi Operations)Japan,
Yokkaichi
300NAND Memory
Kioxia[110]Y4 (at Yokkaichi Operations)Japan,
Yokkaichi
2007300NAND Memory
Kioxia[111]Kaga ToshibaJapan,
Ishikawa
Power semiconductor devices
Kioxia[112]Oita OperationsJapan,
Kyushu
Kioxia[113][114]Y6 (phase 1) (at Yokkaichi Operations)[115]Japan,
Yokkaichi
1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[116][102]2018300BiCS FLASH™
Kioxia[113][114]Y6 (phase 2) (at Yokkaichi Operations)Japan,
Yokkaichi
1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[116][102]Planned300BiCS FLASH™
Kioxia[113][114]Y7Japan,
Yokkaichi
4.6[117][118]Planned300BiCS FLASH™
Kioxia[113]Y2 (at Yokkaichi Operations)Japan,
Yokkaichi
19953D NAND
Kioxia[119][120]New Y2 (at Yokkaichi Operations)Japan,
Yokkaichi
2016, July 153003D NAND
Kioxia[121][122][123][124]K1Japan,
Iwate Prefecture
Under construction3003D NAND
MinebeaMitsumi[125]Rinkai FactoryJapan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319–1221MEMS Foundry
MinebeaMitsumi[125]Haramachi FactoryJapan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041Power semiconductors
Hitachi Energy (Formerly ABB)[126]LenzburgSwitzerland,
Aargau,
Lenzburg
0.1402010 (second phase)130, 15018,750High power semiconductors, diodes, IGBT, BiMOS
Mitsubishi Electric[127]Power Device Works, Kunamoto Site[87]Japan100, 125, 150, 2002000–400122,000Power semiconductors
Mitsubishi Electric[128]High frequency optical device manufacturing plant[87]Japan,
Hyogo Prefecture[128]
100, 12530,000High frequency semiconductor devices (GaAsFET,GaN,MMIC)[128]
Powerchip SemiconductorMemory Foundry, Fab P1[129][130]Taiwan,
Hsinchu
2.24[3]2002[3]30090,70,22[131]80,000Foundry, Memory IC,LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip SemiconductorFab P2[130]Taiwan,
Hsinchu,
Hsinchu Science Park
1.86[3]2005[3]30090,70,22[131]80,000Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor (formerlyMacronix)Fab P3[130]Taiwan,
Hsinchu,
Hsinchu Science Park
30090,70,22[131]20,000Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
SPIL (formerlyProMOS)ProMOS Fab 4[132][133]Taiwan,
Taichung
1.630070Advanced Packaging
Macronix (formerlyProMOS)[134]Fab 5Taiwan, Hsinchu[135]30050,000
Macronix[134]Fab 2Taiwan20048,000
Hon Young Semiconductor (formerlyMacronix[134])Fab 1[136]150800-40040,000Foundry,SiC, Automotive MOSFETs, MEMS
Renesas[137]Naka FactoryJapan200930028[138]
Renesas[137]Takasaki FactoryJapan, 111, Nishiyokotemachi, Takasaki-shi, Gunma, 370-0021
Renesas[137]Kawashiri FactoryJapan, 1-1-1, Yahata, Minami-ku, Kumamoto-shi, Kumamoto, 861–4195
Renesas[137]Saijo FactoryJapan, 8–6, Hiuchi, Saijo-shi, Ehime, 793-8501
RenesasIntersil[137]Palm BayUnited States, Florida, Palm Bay
Bosch

(formerlyTSI Semiconductors[139]) (formerly Renesas)

Roseville fab, M-Line, TD-Line, K-Line[140][3]United States,
California,
Roseville
1992, 1985[3]200
TDK – MicronasFREIBURG[141][142]Germany,
19 D-79108, Hans-Bunte-Strasse
TDK(formerlyRenesas)Tsuruoka Higashi[143][144]125[145]
TDK – TronicsUnited States,
Texas,
Addison[146]
Silanna (formerly Sapphicon Semiconductor)Australia,
New South Wales,
Sydney[3]
0.0301965,1989[3]150
Silanna (formerly Sapphicon Semiconductor) (formerlyPeregrine Semiconductor) (formerlyIntegrated Device Technology)Australia,
New South Wales,
Sydney

[147]

150500, 250RF CMOS,SOS, foundry
Murata Manufacturing[148]Nagano[145]Japan0.100Murata en France (ex IPDIA)[149]SAW filters[145]
Murata Manufacturing[148]Otsuki[145]Japan
Murata Manufacturing[148]KanazawaJapan0.111SAW filters[145]
Murata Manufacturing(formerlyFujifilm)[150][151]SendaiJapan,
Miyagi Prefecture
0.092[145]MEMS[152]
Murata Manufacturing[150]YamanashiJapan,
Yamanashi Prefecture
Murata Manufacturing[153]YasuJapan,
Shiga Prefecture,
Yasu
Murata Electronics (Finland)[154] (formerly VTI, since 1979Vaisalas int. semicon. line)[155]VantaaFinland2012,[156] expanded 2019[157]3D MEMS accelerometers, inclinometers, pressure sensors, gyros, oscillators etc.[158]
Mitsumi Electric[159]Semiconductor Works #3Japan,
Atsugi Operation Base
2000
Mitsumi Electric[159]Japan,
Atsugi Operation Base
1979
Sony[160]Kagoshima Technology Center[87]Japan,
Kagoshima
1973100, 125, 1502000–500110,000Bipolar CCD, MOS,MMIC,SXRD
Sony[160]Oita Technology CenterJapan,
Oita
2016CMOS Image Sensor
Sony[160]Nagasaki Technology Center[87]Japan,
Nagasaki
19871501000-35080,000MOS LSI, CMOS Image Sensors, SXRD
Sony[160]Kumamoto Technology CenterJapan,
Kumamoto
2001CCD Image Sensors, H-LCD, SXRD
Sony[160]Shiroishi Zao Technology CenterJapan,
Shiroishi
1969SemiconductorLasers
SonySony Shiroishi Semiconductor Inc.Japan,
Miyagi
Semiconductor Lasers[161]
Sony(formerly Renesas) (formerly NEC Electronics)(formerly NEC)[160][162][163]Yamagata Technology Center[87]Japan,
Yamagata
2014 (Sony)100, 125, 150, 2003000, 2000, 800MOS, bipolar, CMOS Image Sensor,eDRAM (formerly)
SK Hynix[164]China,
Chongqing
SK Hynix[164]China,
Chongqing
SK Hynix[165][166]South Korea,
Cheongju,
Chungcheongbuk-do
Under construction[167]NAND Flash
SK Hynix[166]South Korea,
Cheongju
Under constructionNAND Flash
SK HynixHC1China,
Wuxi
300100,000[20]DRAM
SK HynixHC2China,
Wuxi
30070,000[20]DRAM
SK Hynix[166]M16South Korea,
Icheon
3.13 (13.4 total planned)2021[168]30010 (EUV)15,000–20,000 (initial)DRAM
LG Innotek[169]PajuSouth Korea,
570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842
LED Epi-wafer, Chip, Package
ON Semiconductor(formerlyGlobalFoundries)(formerlyIBM)[170][171][172]United States,
New York,
East Fishkill
2.5,+.29 (future)[173]20023009022,1412,000–15,000[173]Foundry,RF SOI,SOIFinFET (former), SiGe,SiPh
ON Semiconductor(formerlyLSI)Gresham[174]United States,
Oregon,
Gresham
200110
ON Semiconductor (formerlyFairchild Semiconductor) (formerlyNational Semiconductor) (formerlyFairchild Semiconductor)United States,
Pennsylvania,
Mountain Top
1960–1997200350
ON Semiconductor(formerlyTESLA)RoznovCzech Republic,
Zlín,
Rožnov pod Radhoštěm
1956150, 200100080,000Si,SiC
ON Semiconductor(formerlyMotorola)ISMFMalaysia,
Seremban
15035080,000Discrete
ON Semiconductor(formerlyFujitsu)[175][176]Aizu Wakamatsu Plant[177][87]Japan,
Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502
1970[88]150, 200[178][179][180][181]2000-130Memory, Logic
JS Foundry K.K.(formerlyON Semiconductor)(formerlySanyo)[182][183]Niigata[87]Japan,
Niigata
125, 1502000–600,350120,000CMOS, bipolar, BiCMOS
LA Semiconductor(formerlyON Semiconductor)(formerlyAMI Semiconductor)Pocatello[184]United States,
Idaho,
Pocatello
1997[185]200350
Diodes Incorporated[186] (formerlyON Semiconductor) (formerlyFairchild Semiconductor) (formerlyNational Semiconductor) (formerlyFairchild Semiconductor)SPFABUnited States,
Maine,
South Portland
1960–1997200350
Diodes Incorporated[187] (formerlyZetex Semiconductors)OFABUK,
England,
Greater Manchester,
Oldham
150
Diodes Incorporated (formerlyBCD Semi)[188]China1504000–1000
Lite-On Optoelectronics[189]China,
Tianjin
Lite-On Optoelectronics[189]Thailand,
Bangkok
Lite-On Optoelectronics[189]China,
Jiangsu
Lite-On Semiconductor[190]Keelung PlantTaiwan,
Keelung
1990100Thyristor, DIscrete
Lite-On Semiconductor[190]Hsinchu PlantTaiwan,
Hsinchu
2005Bipolar BCD, CMOS
Lite-On Semiconductor[190]Lite-On Semi (Wuxi)China,
Jiangsu
2004100Discrete
Lite-On Semiconductor[190]Wuxi WMEC PlantChina,
Jiangsu
2005Discrete, Power, Optical ICs
Lite-On Semiconductor[190]Shanghai (SSEC) PlantChina,
Shanghai
199376Fab, Assembly
Trumpf[191] (formerly Philips Photonics)Germany,
Baden-Württemberg,
Ulm
VCSEL
Philips[192]Netherlands,
North Brabant,
Eindhoven
150, 20030,000R&D, MEMS
Newport Wafer Fab[193] (formerlyInfineon Technologies)FAB11UK,
Wales,
Newport
200[194]700-180[194]32,000[194]Foundry, Compound Semiconductors, IC, MOSFET, IGBT[195]
Nexperia (formerlyNXP Semiconductors)(formerlyPhilips)Hamburg site[196]Germany,
Hamburg
195320035,000Small-signal andbipolar discrete devices
Nexperia (formerlyNXP Semiconductors)(formerlyPhilips)(formerlyMullard)Manchester[196]UK,
England,
Greater Manchester,
Stockport
1987?150, 20024,000GaN FETs, TrenchMOS MOSFETs
NXP Semiconductors(formerlyPhilips)ICN8Netherlands,
Gelderland,
Nijmegen
20040,000+[197]SiGe
NXP Semiconductors -SSMCSSMCSingapore1.7[3]2001[3]20012053,000SiGe
NXP Semiconductors – Jilin SemiconductorChina,
Jilin
130
NXP Semiconductors (formerlyFreescale Semiconductor)(formerlyMotorola)Oak Hill Fab[198]United States,
Texas,
Austin
0.8[199]1991200250
NXP Semiconductors (formerlyFreescale Semiconductor)(formerlyMotorola)Chandler Fab[200]United States,
Arizona,
Chandler[201]
1.1[202] +0.1 (GaN)1993150 (GaN), 200180GaN-on-SiC pHEMT
NXP Semiconductors (formerlyFreescale Semiconductor)(formerlyMotorola)ATMC[203]United States,
Texas,
Austin
199520090
AWSCTaiwan,
Tainan[3]
1999[3]15012,000Foundry,GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT,InGaP
Skyworks Solutions[204](formerlyConexant)(formerlyRockwell)United States,
California,
Newbury Park
100, 150Compound Semiconductors (GaAs,AlGaAs,InGaP)
Skyworks Solutions[204] (formerly Alpha Industries)United States,
Massachusetts,
Woburn
100, 150RF/cellular components (SiGe, GaAs)
Skyworks Solutions[204]Japan,
Osaka
SAW, TC-SAW Filters
Skyworks Solutions[204]Japan,
Kadoma
SAW, TC-SAW Filters
Skyworks Solutions[204]Singapore,
Bedok South Road
SAW, TC-SAW Filters
Win SemiconductorFab A[205]Taiwan,
Taoyuan City
150[206]2000–10Foundry,GaAs
Win SemiconductorFab B[205]Taiwan,
Taoyuan City
150[206]2000–10Foundry,GaAs,GaN
Win SemiconductorFab CTaiwan,
Taoyuan[3]
0.050, 0.1782000, 2009[3]150Foundry,GaAs
ams[207]FAB BAustria,
Styria,
Unterpremstätten
200350Optoelectronics
ams Osram (formerly Osram Opto Semiconductors)Malaysia,
Kulim,
Kulim Hi-Tech Park
0.350, 1.18[208]2017, 2020 (second phase, planned)[209][210]150LEDs
ams Osram (formerly Osram Opto Semiconductors)Malaysia,
Penang[211][212]
2009100LEDs
ams Osram (formerly Osram Opto Semiconductors)Germany,
Bavaria,
Regensburg[213]
2003, 2005 (second phase)[214]LEDs
WinbondMemory Product Foundry[215]Taiwan,
Taichung
30046
WinbondCTSP Site[216][217]Taiwan,
No. 8, Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881
300
Winbond[218]Planned300
Vanguard International SemiconductorFab 1[136]Taiwan,
Hsinchu
0.997[3]1994[3]200500, 350, 25055,000Foundry, CMOS
Vanguard International Semiconductor(formerlyWinbond)Fab 2 (formerly Fab 4&5)[219]Taiwan,
Hsinchu
0.965[3]1998[3]20055,000Foundry
Vanguard International Semiconductor Corporation (formerlyGlobalFoundries)(formerlyChartered)Fab 3E[220]Singapore1.3[3]20018034,000Foundry
TSMCFab 2[221][136]Taiwan,
Hsinchu
0.735[3]1990[3]150800, 600, 50088,000[222][3]Foundry, CMOS
TSMCFab 3[136]Taiwan,
Hsinchu
2[3]1995[3]200500, 350, 250100,000[3]Foundry, CMOS
TSMCFab 5[136]Taiwan,
Hsinchu
1.4[3]1997[3]200350, 250, 18048,000[3]Foundry, CMOS
TSMCFab 6Taiwan,
Tainan
2.1[3]2000, January; 2001[223]200, 300180–?99,000[3]Foundry
TSMC(formerly TASMC) (formerlyAcer Semiconductor Manufacturing Inc.) (formerlyTexas Instruments)[224][225][226]Fab 7[227]Taiwan200350, 250, 220, 18033,000Foundry (current)

DRAM (former), Logic (former)

TSMC(formerly WSMC)Fab 8[228]Taiwan,
Hsinchu
1.6[3]1998[3]200250, 18085,000[3]Foundry
TSMC(formerly WSMC)[229]2000200250, 15030,000Foundry
TSMC China CompanyFab 10China,
Shanghai
1.3[3]2004[3]20074,000Foundry
TSMCFab 12Taiwan,
Hsinchu
5.2, 21.6 (total, all phases combined)[3]2001[3]300150–2877,500–123,800 (all phases combined)[3]Foundry
TSMCFab 12 (P4)Taiwan,
Hsinchu
6[3]2009[3]3002040,000[3]Foundry
TSMCFab 12 (P5)Taiwan,
Hsinchu
3.6[3]2011[3]300206,800[3]Foundry
TSMCFab 12 (P6)Taiwan,
Hsinchu
4.2[3]2013[3]3001625,000Foundry
TSMCFab 14Taiwan,
Tainan
5.1[3]2002,[223] 2004[3]3002082,500[3]Foundry
TSMCFab 14 (B)Taiwan,
Tainan
3001650,000+[230]Foundry
TSMCFab 14 (P3)[3]Taiwan,
Tainan
3.1[3]2008[3]3001655,000[3]Foundry
TSMCFab 14 (P4)[3]Taiwan,
Tainan
3.750[3]2011[3]3001645,500[3]Foundry
TSMCFab 14 (P5)[3]Taiwan,
Tainan
3.650[3]2013[3]30016Foundry
TSMCFab 14 (P6)[3]Taiwan,
Tainan
4.2[3]2014[3]30016Foundry
TSMCFab 14 (P7)[3]Taiwan,
Tainan
4.850[3]2015[3]30016Foundry
TSMCFab 15[231]Taiwan,
Taichung
9.3201130020100,000+(166,000 estimate)[232][230][233]Foundry
TSMCFab 15 (P1)[3]Taiwan,
Taichung
3.125[3]20113004,000[3]Foundry
TSMCFab 15 (P2)[3]Taiwan,
Taichung
3.150[3]2012[3]300Foundry
TSMCFab 15 (P3)[3]Taiwan,
Taichung
3.750[3]2013[3]300Foundry
TSMCFab 15 (P4)[3]Taiwan,
Taichung
3.800[3]2014[3]300Foundry
TSMCFab 15 (P5)[3]Taiwan,
Taichung
9.020[3]2016[3]30035,000Foundry
TSMCFab 18 (P1-P3)Taiwan,
Southern Taiwan Science Park[234][235]
17.082020 (P7 under construction)3005[236]120,000Foundry
TSMCFab 18 (P4-P6)Taiwan,
Southern Taiwan Science Park
2022 (planned), under construction3003[20][237][238]120,000Foundry
TSMCFab 21 (P1)United States,
Arizona,
Phoenix
12[239]Q4 2024[240]3005 & 4[241]20,000[241]Foundry
TSMCFab 21 (P2)United States,
Arizona,
Phoenix
65 (shared for Fab 21 site)[240]2H 2027 (planned), under construction[242][240][243]3[240]Foundry
TSMCFab 21 (P3)United States,
Arizona,
Phoenix
65 (shared for Fab 21 site)[240]2029-2030 (planned), under construction[240][243]1.6 & 2[240]Foundry
EpistarFab F1[244]Taiwan,
Longtan Science Park
LEDs
EpistarFab A1[244]Taiwan,
Hsinchu Science Park
LEDs
EpistarFab N2[244]Taiwan,
Hsinchu Science Park
LEDs
EpistarFab N8[244]Taiwan,
Hsinchu Science Park
LEDs
EpistarFab N1[244]Taiwan,
Hsinchu Science Park
LEDs
EpistarFab N3[244]Taiwan,
Hsinchu Science Park
LEDs
EpistarFab N6[244]Taiwan,
Chunan Science Park
LEDs
EpistarFab N9[244]Taiwan,
Chunan Science Park
LEDs
EpistarFab H1[244]Taiwan,
Central Taiwan Science Park
LEDs
EpistarFab S1[244]Taiwan,
Tainan Science Park
LEDs
EpistarFab S3[244]Taiwan,
Tainan Science Park
LEDs
Epistar(formerly TSMC)[245][246][247]Taiwan,
Hsin-Chu Science Park
0.0802011, second halfLEDs
GCSUnited States,
California,
Torrance[3]
1999[3]1006,400Foundry,GaAs,InGaAs,InGaP,InP,HBT,PICs
BoschGermany,
Baden-Württemberg,
Reutlingen
1995[248]150ASIC, analog, power,SiC
BoschGermany,
Saxony,
Dresden
1.0[249]202130065
BoschWaferFabGermany,
Baden-Württemberg,
Reutlingen
0.708[250]2010[248]20030,000ASIC, analog, power, MEMS
STMicroelectronicsAMK8 (second, newer fab)Singapore,
Ang Mo Kio
1995200
STMicroelectronics (formerly SGS Microelettronica)AMJ9 (first fab)Singapore,
Ang Mo Kio
1984[251]150, 2006" 14 kpcs/day, 8" 1.4 kpcs/dayPower-MOS/ IGBT/ bipolar/ CMOS
X-FabErfurtGermany,
Thuringia,
Erfurt
1985[3]200[252]1000-600[252]11200–[252]Foundry, InP
X-Fab(formerlyZMD)DresdenGermany,
Saxony,
Dresden
0.095[3]1985[3]200[253]1000-350[253]6000–[253]Foundry, CMOS, GaN-on-Si
X-Fab(formerly MEMS Foundry Itzehoe)ItzehoeGermany,
Schleswig-Holstein,
Itzehoe
200[254]13000–[254]Foundry, MEMS
X-Fab(formerly 1st Silicon)[255][256]KuchingMalaysia,
Kuching
1.89[3]2000[3]200[257]350-130[257]30,000–[257]Foundry
X-Fab (formerlyTexas Instruments)LubbockUnited States,
Texas,
Lubbock
0.197[3]1977[3]150, 200[258]1000-600[258]15000–[258]Foundry, SiC
X-Fab France SAS (formerlyAltis Semiconductor)(formerlyIBM)[259]ACL-AMFFrance,
Île-de-France,
Corbeil-Essonnes
1991, 1964[3]200350-110Foundry, CMOS,RF SOI
IXYSGermany,
Hesse,
Lampertheim[260]
IGBT[260]
IXYSUK,
England,
Wiltshire,
Chippenham[260]
IXYSUnited States,
Massachusetts[260]
IXYSUnited States,
California[260]
SamsungV1-Line[261]South Korea,
Hwaseong
62020, February 203007Foundry
SamsungS5-LineSouth Korea,
Pyeongtaek
300Foundry
SamsungS4-LineSouth Korea,
Hwaseong
300Foundry
SamsungS3-LineSouth Korea,
Hwaseong
10.2, 16.2 (planned)[262][263]2017[262]30010200,000Foundry
SamsungS1-LineSouth Korea,
Giheung
33 (total)2005 (second phase), 1983 (first phase)[264][265]30065762,000Foundry, CMOS, FDSOI
SamsungLine-6South Korea,
Giheung
100, 150, 2001500–500,18065Foundry, CMOS, BiCMOS
SamsungS6-LineUnited States,
Texas,
Taylor
300Foundry
SamsungS2-LineUnited States,
Texas,
Austin
16[266][267]2011300651192,000Foundry, CMOS, FDSOI
SamsungPyeongtaek[268][269][262]South Korea,
Pyeongtaek
14.7, 27 (total)[270][267][271][272][273][274][275][167]2017, July 630014450,000[276]V-NAND, DRAM
SamsungSamsung China Semiconductor[277]China,
Shaanxi Province
DDR Memory
SamsungF1x1[278][262]China,
Xian
2.3[279]2014 (first phase, second phase is under review)[262]30020100,000VNAND
SamsungGiheung Campus[280]South Korea,
Gyeonggi-do,
Yongin
LEDs
SamsungHwasung Campus[280]South Korea,
Gyeonggi-do,
Hwaseong
LEDs
SamsungTianjin Samsung LED Co., Ltd.[280]China,
Tianjin,
Xiqing
LEDs
SeagateUnited States,
Minnesota,
Minneapolis[281]
Read/write heads,
SeagateUK,
Northern Ireland[282][283][284][285]
Read/write heads
Broadcom Inc. (formerly Avago)United States,
Colorado,
Fort Collins[286]
Wolfspeed (formerlyCree Inc.)[287]DurhamUnited States,
North Carolina,
Durham
Compound Semiconductors, LEDs
Wolfspeed (formerlyCree Inc.)[288]Research Triangle ParkUnited States,
North Carolina
GaNHEMT RF ICs
SMART Modular TechnologiesBrazil,
São Paulo,
Atibaia
2006Packaging
Infineon TechnologiesVillachAustria,
Carinthia,
Villach
1970[289]100, 150, 200, 300MEMS, SiC,GaN
Infineon TechnologiesDresdenGermany,
Saxony,
Dresden
3[290]1994–2011[291]200, 30090
Infineon TechnologiesKulim[292]Malaysia,
Kulim Hi-Tech Park
2006[293]200, 30050,000Power Semiconductor,GaN,SiC
Infineon TechnologiesKulim 2Malaysia,
Kulim Hi-Tech Park
2015200, 30050,000Power Semiconductor,GaN,SiC
Infineon TechnologiesKulim 3Malaysia,
Kulim Hi-Tech Park
8[294]2025200Power Semiconductor,GaN,SiC
Infineon TechnologiesRegensburg[295]Germany,
Bavaria,
Regensburg
1959
Infineon TechnologiesCegled[296]Hungary,
Pest,
Cegléd
Infineon Technologies(formerlyCypress Semiconductor)(formerlySpansion)(formerlyAMD)Fab 25United States,
Texas,
Austin[297]
1.51995200
D-Wave Systems[298]Superconducting Foundry[299]Quantum Processing Units (QPUs)[299]
GlobalFoundries(formerlyAMD)Fab 1 Module 1[300]Germany,
Saxony,
Dresden
3.6[3]200530045-2235,000[3]Foundry, SOI, FDSOI
GlobalFoundries(formerlyAMD)Fab 1 Module 2Germany,
Saxony,
Dresden
4.9[3]199930045-2225,000[3]Foundry, SOI
GlobalFoundriesFab 1 Module 3Germany,
Saxony,
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2.3[3]2011[3]30045-226,000[3]Foundry, SOI
GlobalFoundries(formerlyChartered)Fab 2[220]Singapore1.3[3]1995[3]200600-35056,000[3]Foundry, SOI
GlobalFoundries(formerlyChartered)Fab 3/5[220]Singapore0.915, 1.2[3]1997, 1995[3]200350-18054,000Foundry, SOI
GlobalFoundries(formerlyChartered)Fab 6[220] (merged into Fab 7)Singapore1.4[3]2000[3]200,300 (merged)180-11045,000Foundry, SOI
GlobalFoundries(formerlyChartered)Fab 7[300]Singapore4.6[3]2005[3]300130, 110, 90, 65, 4050,000Foundry,Bulk CMOS,RF SOI
GlobalFoundriesFab 8[300]United States,
New York,
Malta
4.6, 2.1,(1, future)[301]13+ (total)[173][302]2012, 2014[3]30028, 22, 14, 1260,000(+12,500 future)Foundry,High-K Metal Gate,[303]SOIFinFET
GlobalFoundries (formerly IBM[304])Fab 9United States, Vermont, Essex Junction1957[305]200350-9050,000[306]Foundry, SiGe, RF SOI, GaN[306]
GlobalFoundriesTechnology Development Center[3]United States,
New York,
Malta
1.5[3]2014[3]
SUNY Poly CNSENanoFab 300 North[307]United States,
New York,
Albany
0.175, 0.0502004, 200530065,45,32,22
SUNY Poly CNSENanoFab 200[308]United States,
New York,
Albany
0.0161997200
SUNY Poly CNSENanoFab Central[307]United States,
New York,
Albany
0.150200930022
Skorpios Technologies(formerly Novati)(formerlyATDF)(formerlySEMATECH)United States,
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Austin[3][309]
0.0651989[3]20010,000MEMS, photonics, foundry
Opto DiodeUnited States,
California,
Camarillo[310]
LED, Photodiode, PbS/PbSe Infrared Detectors
Optek Technology[311]1968100, 150GaAs, LEDs
II-VI(formerlyOclaro)(formerlyBookham) (formerlyNORTHERN TELECOM SEMICONDUCTOR

NORTHERN TELECOM EUROPE[311])(formerlyJDS Uniphase)(formerly Uniphase)

Semiconductor Lasers,Photodiodes
InfineraUnited States,
California,
Sunnyvale[312][313]
Rogue Valley Microdevices[314][315][316]United States,
Oregon,
Medford
200350.8–300MEMS Foundry, Thin Films Foundry, Silicon Wafers, Wafer Services, MEMS R&D
AtomicaFab 1United States,
California,
Goleta
2000150, 20035020,000Foundry: MEMS,Photonics, Sensors, Biochips
SenserauDev-1United States,
Massachusetts,
Woburn
20141507001,000MEMS, MicroDevice assembly
Rigetti ComputingFab-1[317][318][319]United States,
California,
Fremont
130Quantum Processors
Polar Semiconductor[320]FAB 1,2,3United States,
Minnesota,
Bloomington
200BCD, HV, GMR
Orbit Semiconductor[311]100CCD, CMOS
EntrepixUnited States,
Arizona,
Tempe[3]
2003[3]
Technologies and Devices InternationalUnited States,
Florida,
Silver Springs[3]
2002[3]
Soraa IncUnited States,
California[321][322]
Soraa Laser Diode[321]
Mirrorcle TechnologiesUnited States,
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Richmond[323]
HTE LABSHTE LABSUnited States,
California,
San Jose
0.0052009100, 1504000–10001,000Pure Play Wafer Foundry -BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com
Unitec do BrasilBrazil,
Minas Gerais,
Ribeirão das Neves
Planned
Unitec Blue[324]Argentina,
Buenos Aires Province,
Chascomús
0.3(1.2 planned)[325]2013RFID,SIM,EMV
EverlightYuan-Li PlantTaiwan,
Miao-Li
LEDs
EverlightPan-Yu PlantChinaLEDs
EverlightTu-Cheng PlantTaiwan,
Taipei Country
LEDs
Optotech[326]Taiwan,
Hsinchu
LEDs
Arima OptoelectronicsTaiwan,
Hsinchu[3]
1999[3]
Episil SemiconductorTaiwan,
Hsinchu[3]
1992, 1990, 1988[3]
Episil SemiconductorTaiwan,
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Creative Sensor Inc.Archived 2017-07-07 at theWayback Machine[327][328]NanChang Creative SensorChina,
Jiangxi
2007Image Sensors
Creative Sensor Inc.Archived 2017-07-07 at theWayback Machine[327]Wuxi Creative SensorChina,
Jiangsu
2002
Creative Sensor Inc.Archived 2017-07-07 at theWayback Machine[327]Wuxi Creative SensorTaiwan,
Taipei City
1998
Visera Technologies[329]Headquarters Phase ITaiwan,
Hsinchu Science-based Industrial Park
2007, SeptemberCMOS Image Sensors
PanjitTaiwan,
Kaohsiung[3]
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GTA Semiconductor (formerly ASMC)[331][332]Fab 2, Fab 3[333]China,
Shanghai,
Xuhui District
200350, 180, 150[334]55333HV Analog, Power
GTA SemiconductorFab 5, Fab 6China,
Shanghai,
Pudong New Area
5.1[335]2020150, 200, 300115000
Shanghai Belling[336]China,
Shanghai
1501200BiCMOS, CMOS
SiSemi[337]China,
Shenzhen,
Longgang High-tech Industrial Park[338]
2004130Power semiconductors, LED drivers,bipolar power transistors,power MOSFETs
SiSemi[338]1997100Transistors
CRMicro(formerly CSMC)[339]Fab 11998[3]150[340]60,000[3]HV Analog, MEMS, Power, Analog, Foundry
CRMicro(formerly CSMC)Fab 2China,
Wuxi
2008[3]200[340]180, 13040,000[3]HV Analog, Foundry
CRMicro(formerly CSMC)Fab 31995[3]200[340]13020,000[3]
CRMicro(formerly CSMC)Fab 52005[3]30,000[3]
Nexchip[20]N1[341]China,
Hefei
Q4 2017300150-4040,000Display Drivers IC[342]
Nexchip[20]N2[341]China,
Hefei
Under construction30040,000
Nexchip[20]N3[341]China,
Hefei
Under construction30040,000
Nexchip[20]N4[341]China,
Hefei
Under construction30040,000
Wandai[20]CQChina,
Chongqing
Under construction30020,000
San'an Optoelectronics[343]Tianjin San'an Optoelectronics Co., Ltd.China,
Tianjin
LEDs
San'an OptoelectronicsXiamen San'an Optoelectronics Technology Co., Ltd.China,
Xiamen
LEDs
San'an OptoelectronicsXiamen San'an Optoelectronics Co., Ltd.China,
Xiamen
LEDs
San'an OptoelectronicsWuhu Anrui Optoelectronics Co., Ltd.China,
Wuhu
LEDs
San'an OptoelectronicsAnrui San'an Optoelectronics Co., Ltd.China,
Wuhu
LEDs
San'an OptoelectronicsLuminus SummaryUnited StatesLEDs
San'an OptoelectronicsQuanzhou San'an Semiconductor Technology Co., Ltd.China,
Nan'an
LEDs
Sanan IC[344]Xiamen Fab[345]China,
Xiamen
0.00785201415030,000SAW filters, Foundry,GaA,GaN, RF, Power
Sanan ICQuanzhou FabChina,
Quanzhou
4.620171508,000SAW filters, Foundry,GaA, RF
Sanan ICChangsha FabChina,
Changsha
2.3202115030,000Foundry,GaN,SiC, Power
Hua Hong SemiconductorHH Fab7China, Wuxi30090-5595,000[346]Foundry, eNVM, RF, Mixed Signal, Logic,Power Management,Power Discrete
Hua Hong SemiconductorHH Fab1China,
Shanghai, Jinqiao
2009565,000[347]Foundry, eNVM, RF, Mixed Signal, Logic,Power Management,Power Discrete
Hua Hong SemiconductorHH Fab2China,
Shanghai, Zhangjiang
20018060,000[347]Foundry, eNVM, RF, Mixed Signal, Logic,Power Management,Power Discrete
Hua Hong SemiconductorHH Fab3China,
Shanghai, Zhangjiang
2009053,000[347]Foundry, eNVM, RF, Mixed Signal, Logic,Power Management,Power Discrete
Hua Hong Semiconductor (HLMC)HH Fab5[348]China,
Shanghai, Zhangjiang
201130065/55-4035,000Foundry
Hua Hong Semiconductor (HLMC)HH Fab6China,
Shanghai, Kangqiao
201830028/2240,000Foundry
HuaLei OptoelectronicChinaLEDs[349]
Sino King Technology[19]China,
Hefei
2017DRAM
APT ElectronicsChina,
Guangzhou[3]
2006[3]
AqualiteChina,
Guangzhou[3]
2006[3]
AqualiteChina,
Wuhan[3]
2008[3]
Xiamen Jaysun Semiconductor ManufacturingFab 101China,
Xiamen[3]
0.0352011[3]
Xiyue Electronics TechnologyFab 1China,
Xian[3]
0.0962007[3]
Hanking ElectronicsFab 1China,
Fushun
201820010,000 – 30,000MEMS FoundryArchived 2021-03-08 at theWayback Machine,

MEMS DesignArchived 2021-03-08 at theWayback Machine

MEMS Sensors (Inertial, Pressure,Ultrasound,
Piezoelectric,LiDar,Bolometer )

IoT Motion Sensors

CanSemi[350]Phase IChina,
Guangzhou
42019[351]300180–90[352]20,000Power, Analog, Power Discrete
CanSemiPhase IIChina,
Guangzhou
202230090-5520,000
CanSemiPhase IIIChina,
Guangzhou
2.4[353]Planned30055-4040,000Automotive, IoT
SensFabSingapore[3]1995[3]
MIMOS SemiconductorMalaysia,
Kuala Lumpur[3]
0.006, 0.1351997, 2002[3]
Silterra MalaysiaFab1Malaysia,
Kedah,
Kulim
1.62000200250, 200, 180–9046,000CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal
Pyongyang Semiconductor Factory111 FactoryNorth Korea,
Pyongyang
1980s3000[354]
DB HiTekFab 1South Korea,
Bucheon[3]
1997[3]Foundry
DB HiTekFab 2South Korea,
Eumsung-Kun[3]
2001[3]Foundry
DB HiTekFab 2 Module 2South Korea,
Eumsung-Kun[3]
Foundry
Kodenshi AUK Group[355]Silicon FAB Line
Kodenshi AUK Group[355]Compound FAB Line
KyoceraSAW devices[145]
Seiko Instruments[356]China,
Shanghai
Seiko Instruments[356]Japan,
Akita
Seiko Instruments[356]Japan,
Takatsuka
Epson[357]T wingJapan,
Sakata
1997200350-15025,000
Epson[357]S wingJapan,
Sakata
19911501200-35020,000
Olympus Corporation[358]NaganoJapan,
Nagano Prefecture
MEMS[359]
OlympusJapanMEMS[360]
New Japan RadioKawagoe WorksJapan,
Saitama Prefecture,
Fujimino City[361][362]
1959[311]100, 1504000, 400, 350Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD,40V Hi Speed Complementary Bipolar,Analog CMOS+HV,

SAW Filters[363]

New Japan RadioSaga ElectronicsArchived 2017-09-19 at theWayback Machine[364]Japan,
Saga Prefecture
100, 1504000, 400, 350[365]Foundry, Bipolar, Mixed Signal, Analog,Hi Speed BiCMOS, BCD,40V Hi Speed Complementary Bipolar,Analog CMOS+HV,

SAW Filters[363]

New Japan RadioNJR FUKUOKAArchived 2017-09-18 at theWayback MachineJapan,
Fukuoka Prefecture,
Fukuoka City[364]
2003[366]100, 150Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs
New Japan RadioJapan,
Nagano,
Nagano City[367]
New Japan RadioJapan,
Nagano,
Ueda City[367]
NichiaYOKOHAMA TECHNOLOGY CENTER[368]Japan,
Kanagawa
LEDs
NichiaSUWA TECHNOLOGY CENTER[368]Japan,
Nagano
LEDs
Taiyo YudenJapan,
Nagano
SAW devices[145]
Taiyo YudenJapan,
Ome
SAW devices[145]
Silex MicrosystemsSweden,
Stockholm County,
Järfälla[3]
0.009, 0.0322003, 2009[3]
Elmos SemiconductorGermany,
North Rhine-Westphalia,
Dortmund[369]
1984200800, 3509000HV-CMOS
United Monolithic Semiconductors[370]Germany,
Baden-Württemberg,
Ulm
100700, 250, 150, 100Foundry,FEOL,MMIC,GaAs pHEMT,InGaP,GaN HEMT,MESFET,Schottky diode
United Monolithic Semiconductors[370]France,
Île-de-France,
Villebon-sur-Yvette
100Foundry, BEOL
Innovative Ion ImplantFrance,
Provence-Alpes-Côte d'Azur,
Peynier
51–300[371]
Innovative Ion ImplantUK,
Scotland,
Bathgate
51–300[371]
nanoPHABNetherlands,
North Brabant,
Eindhoven
50–10050-102–10MEMS
Micron Semiconductor Ltd.[372]LancingUK,
England,
West Sussex,
Lancing
Detectors
Pragmatic SemiconductorFlexLogic 001UK,
England,
Durham
0.02020182006004,000Flexible Semiconductor /

Foundry and IDM

Pragmatic SemiconductorFlexLogic 002UK,
England,
Durham
0.050202330060015,000Flexible Semiconductor /

Foundry and IDM

Pragmatic SemiconductorFlexLogic 003UK,
England,
Durham
0.050Planned 2025 on line30060015,000Flexible Semiconductor /

Foundry and IDM

INEX MicrotechnologyUK,
England,
Northumberland,
Newcastle upon Tyne
2014150Foundry
CSTGUK,
Scotland,
Glasgow[3][373]
2003[3]76, 100InP, GaAs,AlAs, AlAsSb,GaSb, GaN, InGaN,AlN, diodes, LEDs, lasers, PICs,Optical amplifiers, Foundry
PhotonixUK,
Scotland,
Glasgow[3]
0.0112000[3]
IntegralBelarus,
Minsk
1963100, 150, 2002000,1500,350
VSP MikronWaferFab[374]Russia,
Voronezh Oblast,
Voronezh
1959100, 150900+6,000Bipolar, Power Semiconductors
SemikronNbg FabGermany,
Nuremberg
1984150350070,000Bipolar, Power Semiconductors
NM-TechRussia,
Moscow,
Zelenograd
2016200250-11020,000
AngstremLiniya 100Russia,
Moscow,
Zelenograd
19631001200500 (6,000 per year)[375]
AngstremLiniya 150Russia,
Moscow,
Zelenograd
19631506006,000 (72,000 per year)[375]
Mikron GroupMikronRussia,
Moscow,
Zelenograd
0.4[376]2012200
150
100
250-65
2000-1600
3,000
8,000
5,000
Crocus Nano ElectronicsRussia,
Moscow
0.2201630090-554,000[377]BEOL
NIIISRussia,
Nizhny Novgorod Oblast,
Nizhny Novgorod
2010100–150350-150MEMS
NPP IstokRussia,
Moscow Oblast,
Fryazino
150
MicranRussia,
Tomsk Oblast,
Tomsk
2015100
Kremny ElRussia,
Bryansk Oblast,
Bryansk
2019500
Syntez MicroelectronicsRussia,
Voronezh Oblast,
Voronezh
1992200350-65SiC, GaN, TSV
NZPP VostokRussia,
Novosibirsk Oblast,
Novosibirsk
1956100250-180
Russian Space SystemsRussia,
Moscow
76, 100, 1501000
RuselectronicsSvetlana-RostRussia,
Saint Petersburg
50, 76, 1001000, 800, 500, 200
OKB-PlanetaSvetlana-RostRussia,
Novgorod Oblast,
Veliky Novgorod
100150
FBK – Fondazione Bruno KesslerMNFItaly, Trento1990500150Research Institute; prototype productions of silicon MEMS, silicon radiation sensors
CEITEC – Centro Nacional de Tecnologia Electrônica Avançada S.ABrazil,
Porto Alegre
2008600Research Institute; prototype production
HT Micron (Hana Micron)São LeopoldoBrazil,
São Leopoldo
0.2[378]2009DRAM, MCP, NAND Flash
Honeywell Aerospace TechnologiesUSA,Redmond, WashingtonMEMS
Microchip (formerly Fujitsu Microelectronics)[379][380][381]Fab 4United States,Oregon,Gresham0.183520011030,000
Microchip(formerlyAtmel)[382][383][380]Fab 5United States,Colorado,Colorado Springs15025040,000Domestic rad-hardMOSFET,silicon carbide, cryptography, hi-rel discretes,MEMS, automotive,analog,microcontrollers, and memory
Microchip (part ofMicrosemi acquisition, formerly New England Semiconductor)[384][385][380]LawrenceUnited States,Massachusetts,Lawrence76.2 and 1001,0002,000

Number of open fabs currently listed here: 474

(NOTE: Some fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered bad luck; seetetraphobia.)

Closed plants

[edit]
CompanyPlant NamePlant LocationPlant Cost (in US$Billions)Started ProductionWafer Size (mm)Process TechnologyNode (nm)Production Capacity (Wafers/Month)Technology / ProductsEnded Production
BelGaN Group (formerlyON Semiconductor) (formerlyAMI Semiconductor) (formerly Alcatel Microelectronics)(formerly Mietec)[386]Oudenaarde[387]Belgium,
East Flanders,
Oudenaarde
150, 2003000, 2000–350GaN, mixed-signal CMOS, BCD foundry2024
VEFSoviet Union,
Latvia,
Riga
1960Semi-secret governmentsemiconductor fab and a major research center separated from the Russian military manufacturing complex by thecollapse of the USSR.1999
Tower Semiconductor(formerlyMicron)Fab 4[388]Japan,
Hyōgo,
Nishiwaki
0.450[3]1992[3]2009560,000[3]DRAM, foundry2014
Tower Semiconductor – TacomaChina,
Jiangsu,
Nanjing[389][390]
halted, bankruptcy in June 2020[391]200, 300 (planned)Foundry2020
Fujian Jinhua (JHICC)[20][392][393][394]F2China,
Fujian,
Jinjiang
5.65[395]2018 (planned)3002260,000DRAM[19]2018
Decoma[20]F2China,
Jiangsu,
Huai'an
Under construction30020,0002020
Wuhan Hongxin Semiconductor Manufacturing (HSMC)[396]China,
Hubei,
Wuhan
2019 (halted)30014, 730,000[397]Foundry2020
Tsinghua UnigroupUnigroup Guoxin (Unigroup, Xi'an UniIC Semiconductors Co., Ltd.)[20]SZChina,
Guangdong,
Shenzhen
12.5Planned30050,000DRAM2019 (just plan)
TSMCFab 1[222][136]Taiwan
Hsinchu,
Baoshan
19871502000-80020,000Foundry, CMOS, BiCMOS2001, March 9
UMCFab 1Japan,
Chiba,
Tateyama
0.543[3]1997[3]20040,000Foundry2012
SK HynixE-4United States,
Oregon,
Eugene
1.3200720030,000DRAM2008[398]
Symetrix –Panasonic[399]Brazil0.9 (planned)plannedFeRAM(just plan)
Rohm (formerlyData General)United States,
California,
Sunnyvale[400]
KioxiaFab 1 (at Yokkaichi Operations)[401]Japan,
Mie,
Yokkaichi
199220040035,000SRAM, DRAM2001, September
NECLivingston[402][87]United Kingdom,
Scotland,
West Lothian,
Livingston
4.5 (total)1981150, 200800–350, 250, 18030,000CMOS, DRAM, SRAM, MCUs, ASICs, DSPs2001, April
LFoundry [de] (formerlyRenesas Electronics)[403]Germany,
Bavaria,
Landshut
19922002011
LFoundry [de](formerlyAtmel)[404]France,
Bouches-du-Rhône,
Rousset
?20025.000[405]
Atmel (formerlySiemens)Fab 9[406]United Kingdom,
Tyne and Wear,
North Tyneside
1.53[407]1998[408]DRAM[408]2007[409]
EI NišEi PoluprovodniciSerbia,
Nišava,
Niš
19621002000
Plessey Semiconductors(formerlyPlus Semi) (formerlyMHS Electronics)(formerlyZarlink)(formerlyMitel) (formerlyPlessey Semiconductors)[387]UK,
Devon,
Plymouth[3]
100, 150800, 5008,000Bipolar, ASICs, linear ICs
Telefunken Semiconductors [de]Heilbronn, HNO-Line[387]Germany,
Baden-Württemberg,
Heilbronn
0.125[3]1993[3]100, 15080010,000Bipolar, CMOS, BiCMOS, GaAs, SiGe, ASICs, ASSPs, MCUs, discrete, optoelectronics2015
QimondaRichmond[410]United States,
Virginia,
Richmond
320053006538,000DRAM2009, January
STMicroelectronics (formerlyNortel[311])[387]United States,
California,
San Diego,
Rancho Bernardo
100, 150800, 500NMOS,CMOS, BiCMOS2002[411]
Freescale Semiconductor(formerlyMotorola)Toulouse Fab[412]France,
Haute-Garonne,
Toulouse
1969150650Automotive2012[413]
Freescale Semiconductor(formerlyMotorola) (formerlyTohoku Semiconductor)Sendai Fab[414]Japan,
Miyagi,
Sendai
1987150, 200500DRAM, microcontrollers, analog, sensors2009?
Agere Systems(formerlyLucent)(formerlyAT&T)[415]Spain,
Madrid,
Tres Cantos
0.67[416]1987[417]500, 350, 300CMOS2001
GMT Microelectronics (formerlyCommodore Semiconductor) (formerlyMOS Technology)United States,
Pennsylvania,
Audubon
1969
1976
1995
10001976
1992[418]
2001
Integrated Device TechnologyUnited States,
California,
Salinas
1985150800-350[419]2002
ON Semiconductor (formerlyCherry Semiconductor)[420]United States,
Rhode Island,
East Greenwich
100, 150140010,000Bipolar, BiCMOS, Linear ICs and ASICs2004
ON Semiconductor (formerlyMotorola)[420]United States,
Arizona,
Phoenix
1505000-50012,000MOS, power discrete2011
ON Semiconductor(formerlyMotorola)Aizu Plant[420]Japan,
Aizu
100, 1501200, 100040,000CMOS, MCUs, logic and smart power ICs2012
ON Semiconductor(formerly Truesense Imaging,Kodak)RochesterUnited States,
New York,
Rochester[421]
150CCDs and Image Sensors2020
IntelFab 8[61]Israel,
Jerusalem District,
Jerusalem
1985150Microprocessors,Chipsets,Microcontrollers[62]2007
IntelFab D2United States,
California,
Santa Clara
19892001308,000Microprocessors, Chipsets,Flash memory2009
IntelFab 17[52][51]United States,
Massachusetts,
Hudson
1998200130Chipsets and other[51]2014
Fairchild Semiconductor (formerlyNational Semiconductor)West JordanUnited States,
Utah,
West Jordan
19771502015[422]
Texas InstrumentsHFABUnited States,
Texas,
Houston
19671502013[423]
Texas Instruments (formerlySilicon Systems)Santa CruzUnited States,
California,
Santa Cruz
0.250198015080080,000HDD2001
Texas Instruments (formerlyNational Semiconductor)ArlingtonUnited States,
Texas,
Arlington
198515080000, 350002010
Unknown (fortune 500 company)United States,
East Coast[424]
1501,600MEMS2016
Diodes Incorporated (formerlyLite-On Power Semiconductor)(formerlyAT&T)KFABUnited States,
Missouri,
Lee's Summit
1994[425]1302017[426]
Qorvo (formerlyTriQuint Semiconductor)(formerlySawtek)United States,
Florida,
Apopka[76][427]
SAW filters2019
GlobalFoundriesAbu Dhabi[3]UAE,
Emirate of Abu Dhabi,
Abu Dhabi[3]
6.8[3] (planned)2016[3] (planned)300180-11045,000Foundry2011 (plan stopped)
GlobalFoundries – ChengduChina,
Sichuan,
Chengdu[428]
10 (planned)2018 (planned), 2019 (second phase)300180/130 (cancelled),22 (second phase)20,000 (85,000 planned)Foundry, FDSOI (second phase)2020 (was idle)
Tondi Elektroonika[429]A-1381Soviet Union,
Estonia,
Harju,
Tallinn
1958Radio equipment, Transisors, Photodiode1978
Intersil (formerlyHarris Semiconductor, formerlyGE, formerlyRCA)[420]United States,
Ohio,
Findlay
1954100, 1252000, 1500, 120060,000CMOS, bipolar, BiCMOS, Semiconductors, Optoelectronics, Integrated Circuits, Research[430]2003[431]
Microchip (formerlyGeneral Instrument)[432][433]Fab 1United States,Arizona,Chandler1255,000
Microchip (formerlyDigital Equipment Corporation, formerlyGTE Corporation)[434][380][435]Fab 2United States,Arizona,Tempe20025020,000
Microchip (formerlyMatsushita Semiconductor Corporation of America)[436][437][438]Fab 3United States,Washington,Puyallupfield-programmablemicrocontrollers, serialEEPROMs, and microperipheral products

Number of closed fabs currently listed here: 49

See also

[edit]

References

[edit]
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