Semiconductor fabrication plants are factories whereintegrated circuits (ICs), also known asmicrochips, are manufactured. They are either operated byIntegrated Device Manufacturers (IDMs) that design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or bypure play foundries that manufacture designs from fabless companies and do not design their own ICs. Some pure play foundries likeTSMC offer IC design services, and others, likeSamsung, design and manufacture ICs for customers, while also designing, manufacturing and selling their own ICs.
This section needs to beupdated. Please help update this article to reflect recent events or newly available information.(March 2025) |
Operating fabs include foundries fromTSMC,GlobalFoundries, Silex Microsystems,Tower Semiconductor,Advanced Micro Foundry,VTT,SilTerra andIHP Microelectronics amongst others.[1]
| Company | Plant name | Plant location | Plant cost (in US$ billions) | Started production | Wafer size (mm) | Process technologynode (nm) | Production capacity (Wafers/Month) | Technology / products | |
|---|---|---|---|---|---|---|---|---|---|
| STMicroelectronics | France, Crolles | 2003 | 200, 300 | 28, 55, 65 | Foundry, SiGe BiCMOS, FD-SOI | ||||
| STMicroelectronics | AG200, AG300 | Italy, Agrate Brianza | 200, 300 | Foundry, MEMS | |||||
| nLIGHT | United States, Washington, Vancouver | 2001 | Laser diodes | ||||||
| Safran Sensing Technologies Switzerland (formerly Colibrys) | Switzerland,Yverdon-les-Bains | 150 | Foundry,MEMS | ||||||
| Pure Wafer | United States,Arizona,Prescott[2] | Foundry | |||||||
| EM Microelectronic | Switzerland,La Tène, Neuchâtel | 1975 | 180, 110 | Foundry, microcontrollers, ASIC, RFID, smart cards | |||||
| UMC –He Jian | Fab 8N | China, Suzhou | 0.750,[3] 1.2, +0.5 | 2003, May[3] | 200 | 4000–1000, 500, 350, 250, 180, 110 | 77,000 | Foundry | |
| UMC | Fab 6A | Taiwan, Hsinchu | 0.35[3] | 1989[3] | 150 | 450 | 31,000 | Foundry | |
| UMC | Fab 8AB | Taiwan, Hsinchu | 1[3] | 1995[3] | 200 | 250 | 67,000[4] | Foundry | |
| UMC | Fab 8C | Taiwan, Hsinchu | 1[3] | 1998[3] | 200 | 350–110 | 37,000 | Foundry | |
| UMC | Fab 8D | Taiwan, Hsinchu | 1.5[3] | 2000[3] | 200 | 90 | 31,000 | Foundry | |
| UMC | Fab 8E | Taiwan, Hsinchu | 0.96[3] | 1998[3] | 200 | 180 | 37,000 | Foundry | |
| UMC | Fab 8F | Taiwan, Hsinchu | 1.5[3] | 2000[3] | 200 | 150 | 40,000 | Foundry | |
| UMC | Fab 8S | Taiwan, Hsinchu | 0.8[3] | 2004[3] | 200 | 350–250 | 31,000 | Foundry | |
| UMC | Fab 12A | Taiwan, Tainan | 4.65, 4.1, 6.6, 7.3[3] | 2001, 2010, 2014, 2017[3] | 300 | 28, 14 | 87,000[4] | Foundry | |
| UMC | Fab 12i | Singapore | 3.7[3] | 2004[3] | 300 | 130–40 | 53,000 | Foundry | |
| UMC – United Semiconductor | Fab 12X | China, Xiamen | 6.2 | 2016 | 300 | 55–28 | 19,000-25,000 (2021) | Foundry | |
| UMC –USJC(formerly MIFS)(formerlyFujitsu) | Fab 12M (original Fujitsu installations)[5] | Japan, Mie Prefecture | 1974 | 150, 200, 300[6] | 90–40 | 33,000 | Foundry | ||
| Texas Instruments | Miho | Japan, Ibaraki, Miho | 200 | 350,250[7] | 40,000[8] | Analog,DLP[9] | |||
| Texas Instruments (formerlySpansion) | Aizu[10] | Japan, Fukushima, Aizuwakamatsu | 200 | Analog | |||||
| Texas Instruments (formerlyNational Semiconductor) | MFAB[11] | United States, Maine, South Portland | 0.932 | 1997 | 200 | 350,250,180 | Analog | ||
| Texas Instruments (formerlyMicron) (formerlyIM Flash) | LFAB | United States, Utah, Lehi | 1.3[12] (+ 3–4, future)[13] | 300 | 65–45 | 70,000 | Analog, mixed signal, logic NAND FLASH (former),3D XPoint (former) | ||
| Texas Instruments | RFAB1[14] | United States, Texas, Richardson | 2009 | 300 | 250,180 | 20,000[15] | Analog | ||
| Texas Instruments | RFAB2 | United States, Texas, Richardson | 2022 | 300 | Analog | ||||
| Texas Instruments | DMOS5 | United States, Texas, Dallas | 1984 | 200 | 250,180 | Analog,DLP | |||
| Texas Instruments | DMOS6 | United States, Texas, Dallas | 2000 | 300 | 130–45 | 22,000[16] | Logic, Analog | ||
| Texas Instruments | DFAB | United States, Texas, Dallas | 1966 | 150, 200 | Mixed Signal, Analog | ||||
| Texas Instruments | SFAB | United States, Texas, Sherman | 1965 | 150 | Analog | ||||
| Texas Instruments | FFAB | Germany, Bavaria, Freising | 200 | 1000,180 | 37,500 (450,000 per year)[17] | Analog | |||
| Texas Instruments(formerly SMIC – Cension) | CFAB | China, Chengdu | 200 | 30,000[18] | Analog | ||||
| Tsinghua Unigroup[19] | China, Nanjing | 10 (first phase), 30 | Planned | 300 | 100,000 (first phase) | 3D NAND | |||
| Tsinghua Unigroup – XMC (formerly Xinxin)[20] | Fab 1 | China, Wuhan[3] | 1.9 | 2008 | 300 | 90, 65, 60, 50, 45, 40, 32 | 30,000[21] | Foundry,NOR | |
| Tsinghua Unigroup –Yangtze Memory Technologies (YMTC) – XMC (formerly Xinxin)[20][21][19] | Fab 2 | China, Wuhan | 24 | 2018[3] | 300 | 20 | 200,000 | 3D NAND | |
| ChangXin Memory – (formerly Innotron Memory) | Fab 1[22] | China, Hefei | 8[23] | 2019[24] | 300 | 19 | 20,000–40,000 | DRAM | |
| SMIC | S1 Mega Fab (S1A/S1B/S1C)[25] | China, Shanghai | 200 | 350–90 | 115,000[26] | Foundry | |||
| SMIC | S2 (Fab 8)[25] | China, Shanghai | 300 | 45/40–32/28 | 20,000 | Foundry | |||
| SMIC – SMSC | SN1[25] | China, Shanghai | 10 | 2020[27] | 300 | 14 | 70,000[27] | Foundry | |
| SMIC | B1 Mega Fab (Fab 4, Fab 6)[25] | China, Beijing | 2004 | 300 | 180–90/55 | 52,000 | Foundry | ||
| SMIC | B2A[25] | China, Beijing | 3.59[28] | 2014 | 300 | 45/40–32/28 | 41,000 | Foundry | |
| SMIC | Fab 15[25] | China, Shenzhen | 2014 | 200 | 350–90 | 55,000 | Foundry | ||
| SMIC | Fab 7[25] | China, Tianjin | 2004 | 200 | 350–90 | 60,000[29] | Foundry | ||
| SMIC | Jingcheng | China, Beijing | 7.7[30] | Under construction | 300 | 28 | 100,000 | Foundry | |
| SMIC | Lingang | China, Shanghai | 8.87[31] | Under construction | 300 | 28 | 100,000 | Foundry | |
| SMIC | Shenzhen | China, Shenzhen | 2.35[32] | Under construction | 300 | 28 | 40,000 | Foundry | |
| SMIC | Xiqing | China, Tianjin | 7.5[33] | Under construction | 300 | 28 | 100,000 | Foundry | |
| Wuxi Xichanweixin (formerlySMIC –LFoundry [de])(formerlyLFoundry [de])(formerlyMicron)[34] (formerlyTexas Instruments) | LF | Italy, Abruzzo, Avezzano | 1995 | 200 | 180–90 | 40,000 | |||
| Nanya | Fab 2 | Taiwan, Linkou | 0.8 | 2000 | 200[35] | 175 | 30,000 | DRAM | |
| Nanya | Fab 3A[36] | Taiwan, New Taipei City[37] | 1.85[38] | 2018 | 300 | 70-20 | 34,000[39] | DRAM | |
| Nanya | Taiwan, New Taipei City[40] | 10.66 | Under construction | 300 | 10 | 15,000–45,000 | DRAM | ||
| MESA+ Institute | NANOLAB | Netherlands, Enschede | Academic research, R&D activities, pilot production for MEMS, Photonics, Microfluidics | ||||||
| Micron | Fab 4[41] | United States, Idaho, Boise | 300 | R&D | |||||
| Micron (formerly Dominion Semiconductor) | Fab 6 | United States, Virginia, Manassas | 1997 | 300 | 25 | 70,000 | DRAM,NAND FLASH,NOR | ||
| Micron (formerly TECH Semiconductor) | Fab 7 (formerly TECH Semiconductor, Singapore)[42] | Singapore | 300 | 60,000 | NAND FLASH | ||||
| Micron(formerlyIM Flash)[43] | Fab 10[44] | Singapore | 3 | 2011 | 300 | 25 | 140,000[45] | NAND FLASH | |
| Micron(formerlyInotera) | Fab 11[46] | Taiwan, Taoyuan | 300 | 20 and under | 125,000[47] | DRAM | |||
| Micron | Fab 13[48] | Singapore | 200 | NOR | |||||
| Micron | Singapore[49] | 200 | NOR Flash | ||||||
| Micron | Micron Semiconductor Asia | Singapore[49] | |||||||
| Micron | China, Xi'an[49] | ||||||||
| Micron (formerlyElpida Memory) | Fab 15 (formerly Elpida Memory, Hiroshima)[41][49] | Japan, Hiroshima | 300 | 20 and under | 100,000 | DRAM | |||
| Micron(formerly Rexchip) | Fab 16 (formerly Rexchip, Taichung)[41] | Taiwan, Taichung | 300 | 30 and under | 80,000 | DRAM, FEOL | |||
| Micron(formerly Cando) | Micron Memory Taiwan[49] | Taiwan, Taichung | ?, 2018 | 300 | DRAM, BEOL | ||||
| Micron | A3 | Taiwan, Taichung[50] | Under construction | 300 | DRAM | ||||
| Intel | D1B | United States, Oregon, Hillsboro | 1996 | 300 | 22, 14, 10 | Microprocessors[51] | |||
| Intel | D1C[52][51] | United States, Oregon, Hillsboro | 2001 | 300 | 22, 14, 10 | Microprocessors[51] | |||
| Intel | D1D[52][51] | United States, Oregon, Hillsboro | 2003 | 300 | 14, 10, 7 | Microprocessors[51] | |||
| Intel | D1X[53][51] | United States, Oregon, Hillsboro | 2013 | 300 | 14, 10, 7 | Microprocessors[51] | |||
| Intel | Fab 12[52][51] | United States, Arizona, Chandler | 1996 | 300 | 65, 22, 14 | Microprocessors &chipsets[51] | |||
| Intel | Fab 32[52][54] | United States, Arizona, Chandler | 3 | 2007 | 300 | 45 | |||
| Intel | Fab 32[52][51] | United States, Arizona, Chandler | 2007 | 300 | 32, 22 | Microprocessors[51] | |||
| Intel | Fab 42[55][56][51] | United States, Arizona, Chandler | 10[57] | 2020[58] | 300 | 10, 7 | Microprocessors[51] | ||
| Intel | Fab 52, 62[59][60] | United States, Arizona, Chandler | 20[59] | 2024[59] | Microprocessors[59] | ||||
| Intel | Fab 11x[52][51] | United States, New Mexico, Rio Rancho | 2002 | 300 | 45, 32 | Microprocessors[51] | |||
| Intel(formerlyMicron)(formerlyNumonyx)(formerlyIntel) | Fab 18[61] | Israel, Southern District, Kiryat Gat | 1996 | 200, 300 | 180, 90, 65, 45 | Microprocessors and chipsets,[62]NOR flash | |||
| Intel | Fab 10[52] | Ireland, County Kildare, Leixlip | 1994 | 300 | |||||
| Intel | Fab 14[52] | Ireland, County Kildare, Leixlip | 1998 | 300 | |||||
| Intel | Fab 24[52][51] | Ireland, County Kildare, Leixlip | 2004 | 300 | 90, 65, 14[63] | Microprocessors, Chipsets and Comms[51] | |||
| Intel | Fab 28[52][51] | Israel, Southern District, Kiryat Gat | 2008 | 300 | 45, 22, 10 | Microprocessors[51] | |||
| Intel | Fab 38[64] | Israel, Southern District, Kiryat Gat | Under construction | 300 | Microprocessors[51] | ||||
| Intel | Fab 68[52][65] | China, Dalian | 2.5 | 2010 | 300 | 65[66] | 30,000–52,000 | Microprocessors (former),VNAND[51] | |
| Costa Rican Ministry of Innovation, Science, Technology and Telecommunications | Centro de Exelencia, Distrito Tecnologico T24 | Costa Rica, San Jose, San Jose | 0.5 | Under Construction | 300 | 20 and under | Research on Foundry, AI BEOL & microprocessors | ||
| Tower Semiconductor(formerlyMaxim)(formerlyPhilips)(formerlyVLSI) | Fab 9[67][68] | United States, Texas, San Antonio | 2003 | 200 | 180 | 28,000 | Foundry,AlBEOL, Power,RFAnalog | ||
| Tower Semiconductor (formerlyNational Semiconductor) | Fab 1[69] | Israel, Northern District, Migdal HaEmek | 0.235[3] | 1989, 1986[3] | 150 | 1000–350 | 14,000 | Foundry, Planarized BEOL,W and OxideCMP,CMOS, CIS, Power,Power Discrete | |
| Tower Semiconductor | Fab 2[69] | Israel, Northern District, Migdal HaEmek | 1.226[3] | 2003 | 200 | 180–130 | 51,000[3] | Foundry,Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power,Power Discrete,MEMS, RFCMOS | |
| Tower Semiconductor (formerlyJazz Technologies)(formerlyConexant)(formerlyRockwell) | Fab 3,[69] Newport Beach[3] | United States, California, Newport Beach | 0.165[3] | 1967, 1995[3] | 200 | 500-130 | 25,000[3] | Foundry, Al BEOL,SiGe, EPI | |
| Tower Semiconductor –TPSCo (formerlyPanasonic) | Fab 5,[69] Tonami[70] | Japan, Tonami | 1994 | 200 | 500–130 | Foundry,Analog/Mixed-Signal, Power, Discrete,NVM,CCD | |||
| Tower Semiconductor –TPSCo (formerlyPanasonic) | Fab 7,[69] Uozu[70] | Japan, Uozu | 1984 | 300 | 65.45 | Foundry, CMOS, CIS, RFSOI,Analog/Mixed-Signal | |||
| Tower Semiconductor –TPSCo (formerlyPanasonic) | Fab 6,[69] Arai[70] | Japan, Arai | 1976 | 200 | 130–110 | Foundry,Analog/Mixed-Signal, CIS, NVM,Thick CuRDL | |||
| Nuvoton[71] | Fab2 | Taiwan, Hsinchu | 150 | 1000-350 | 45,000[71] | Generic Logic, Mixed Signal (Mixed Mode),High Voltage,Ultra High Voltage,Power Management,Mask ROM (Flat Cell),Embedded Logic, Non-Volatile Memory,IGBT,MOSFET,Biochip, TVS,Sensor | |||
| ISRO | SCL[72] | India, Mohali | 2006 | 200 | 180 | MEMS, CMOS, CCD, N.S. | |||
| STAR-C[73][74] | MEMS[74] | India, Bangalore | 1996 | 150 | 1000–500 | MEMS | |||
| STAR-C[73][74] | CMOS[74] | India, Bangalore | 1996 | 150 | 1000–500 | CMOS | |||
| GAETEC[73][75] | GaAs[75] | India, Hyderabad | 1996 | 150 | 700–500 | MESFET | |||
| BAE Systems(formerlySanders) | United States, New Hampshire, Nashua[3] | 1985[3] | 100, 150 | 140, 100, 70, 50 | MMIC,GaAs, GaN-on-SiC, foundry | ||||
| Qorvo (formerlyRF Micro Devices) | United States, North Carolina, Greensboro[76] | 100,150 | 500 | 8,000 | SAW filters,GaAsHBT,GaAs pHEMT,GaN | ||||
| Qorvo (formerlyTriQuint Semiconductor)(formerlyMicron) (formerlyTexas Instruments) (formerly TwinStar Semiconductor) | United States, Texas, Richardson[76] | 0.5 | 1996 | 100, 150, 200 | 350, 250, 150, 90 | 8,000 | DRAM (former),BAW filters,power amps,GaAs pHEMT, GaN-on-SiC | ||
| Qorvo (formerlyTriQuint Semiconductor) | United States, Oregon, Hillsboro[76] | 100, 150 | 500 | Power amps,GaAs | |||||
| Apple(formerlyMaxim)(formerlySamsung) | X3[77] | United States, California, San Jose | ?, 1997, 2015[78] | 600–90 | |||||
| Analog Devices (formerlyMaxim Integrated) | MaxFabNorth[79] | United States, Oregon, Beaverton | (+1, future)[80] | ||||||
| Rohm[81](formerlyRenesas) | Shiga Factory | Japan | 200 | 150 | IGBT, MOSFET, MEMS | ||||
| Rohm (Lapis Semiconductor)(formerly Oki Semiconductor)(Oki Electric Industry)[81][82] | Miyasaki | Japan | 150 | MEMS | |||||
| Rohm (Lapis Semiconductor)[81] | Building No.1 | Japan | 1961[83] | Transistors | |||||
| Rohm (Lapis Semiconductor)[81] | Building No.2 | Japan | 1962[83] | Transistors | |||||
| Rohm (Lapis Semiconductor)[81] | Building No.3 | Japan | 1962[83] | Transistors | |||||
| Rohm (Lapis Semiconductor)[81] | Building No.4 | Japan | 1969[83] | Transistors | |||||
| Rohm (Lapis Semiconductor)[81] | Chichibu Plant | Japan | 1975[83] | DRAM | |||||
| Rohm (Lapis Semiconductor)[81] | VLSI Laboratory No. 1 | Japan | 1977[83] | VLSI | |||||
| Rohm (Lapis Semiconductor)[81] | VLSI Laboratory No. 2 | Japan | 1983[83] | ||||||
| Rohm (Lapis Semiconductor)[81] | VLSI Laboratory No. 3 | Japan | 1983[83] | DRAM | |||||
| Rohm (Lapis Semiconductor)[81] | Thailand | 1992[83] | |||||||
| Rohm (Lapis Semiconductor)[81] | ULSI Laboratory No. 1 | Japan | 1992[83] | 500 | DRAM | ||||
| Rohm (Kionix)[84] (formerlyRenesas Kyoto) | Kyoto | Japan, Kyoto | 200 | MEMS | |||||
| Fuji Electric[85] | Hokuriku | Japan, Toyama prefecture | |||||||
| Fuji Electric[86] | Matsumoto[87] | Japan, Nagano prefecture | 100, 150 | 2000–1000 | 20,000 | CMOS. BiCMOS, bipolar, ASICs, discrete | |||
| Fujitsu | Kawasaki | Japan, Kawasaki | 1966[88] | ||||||
| Fujitsu | Kumagaya Plant[89] | Japan, Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801 | 1974 | ||||||
| Fujitsu[90] | Suzaka Plant | Japan, Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501 | |||||||
| Dynex Semiconductor | Lincoln, United Kingdom | 1956 | 101.6, 150 | Power Semiconductors | |||||
| Denso(formerlyFujitsu) | Iwate Plant[91][6][87] | Japan, Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593 | 125, 150, 200 | 1500–350 | 100,000 | CMOS, MOS, bipolar | |||
| Denso[92] | Denso Iwate[93][94][95] | Japan, Iwate Prefecture, Kanegasaki-cho | 0.088 | Under construction, 2019, May (planned) | Semiconductor wafers and sensors(since June 2017) | ||||
| Canon Inc. | Oita[96] | Japan | |||||||
| Canon Inc. | Kanagawa[97] | Japan | |||||||
| Canon Inc. | Ayase[96] | Japan | |||||||
| Sharp Corporation | Fukuyama[98][87] | Japan | 125, 150, 200 | 1000, 800, 600 | 85,000 | CMOS | |||
| Japan Semiconductor | Iwate | Japan | |||||||
| Japan Semiconductor[99] | Oita | Japan | |||||||
| Japan Advanced Semiconductor Manufacturing, Inc[100] | Kumamoto | Japan | 20+ | 2024 | 300 | 40, 22/28, 12/16 and 6/7 | 100,000+ | ||
| Kioxia | Yokkaichi Operations[101][102] | Japan, Yokkaichi | 1992 | 173,334[103][104][105][106] | Flash Memory | ||||
| Kioxia/SanDisk | Y5 Phase 1 (at Yokkaichi Operations) | Japan, 800 Yamanoisshikicho, Yokkaichi, Mie[107] | 2011 | Flash | |||||
| Kioxia/SanDisk | Y5 Phase 2[107] (at Yokkaichi Operations) | Japan, Mie | 2011 | 300 | 15[108] | Flash | |||
| Kioxia[109] | Y3 (at Yokkaichi Operations) | Japan, Yokkaichi | 300 | NAND Memory | |||||
| Kioxia[110] | Y4 (at Yokkaichi Operations) | Japan, Yokkaichi | 2007 | 300 | NAND Memory | ||||
| Kioxia[111] | Kaga Toshiba | Japan, Ishikawa | Power semiconductor devices | ||||||
| Kioxia[112] | Oita Operations | Japan, Kyushu | |||||||
| Kioxia[113][114] | Y6 (phase 1) (at Yokkaichi Operations)[115] | Japan, Yokkaichi | 1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[116][102] | 2018 | 300 | BiCS FLASH™ | |||
| Kioxia[113][114] | Y6 (phase 2) (at Yokkaichi Operations) | Japan, Yokkaichi | 1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[116][102] | Planned | 300 | BiCS FLASH™ | |||
| Kioxia[113][114] | Y7 | Japan, Yokkaichi | 4.6[117][118] | Planned | 300 | BiCS FLASH™ | |||
| Kioxia[113] | Y2 (at Yokkaichi Operations) | Japan, Yokkaichi | 1995 | 3D NAND | |||||
| Kioxia[119][120] | New Y2 (at Yokkaichi Operations) | Japan, Yokkaichi | 2016, July 15 | 300 | 3D NAND | ||||
| Kioxia[121][122][123][124] | K1 | Japan, Iwate Prefecture | Under construction | 300 | 3D NAND | ||||
| MinebeaMitsumi[125] | Rinkai Factory | Japan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319–1221 | MEMS Foundry | ||||||
| MinebeaMitsumi[125] | Haramachi Factory | Japan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041 | Power semiconductors | ||||||
| Hitachi Energy (Formerly ABB)[126] | Lenzburg | Switzerland, Aargau, Lenzburg | 0.140 | 2010 (second phase) | 130, 150 | 18,750 | High power semiconductors, diodes, IGBT, BiMOS | ||
| Mitsubishi Electric[127] | Power Device Works, Kunamoto Site[87] | Japan | 100, 125, 150, 200 | 2000–400 | 122,000 | Power semiconductors | |||
| Mitsubishi Electric[128] | High frequency optical device manufacturing plant[87] | Japan, Hyogo Prefecture[128] | 100, 125 | 30,000 | High frequency semiconductor devices (GaAsFET,GaN,MMIC)[128] | ||||
| Powerchip Semiconductor | Memory Foundry, Fab P1[129][130] | Taiwan, Hsinchu | 2.24[3] | 2002[3] | 300 | 90,70,22[131] | 80,000 | Foundry, Memory IC,LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC | |
| Powerchip Semiconductor | Fab P2[130] | Taiwan, Hsinchu, Hsinchu Science Park | 1.86[3] | 2005[3] | 300 | 90,70,22[131] | 80,000 | Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC | |
| Powerchip Semiconductor (formerlyMacronix) | Fab P3[130] | Taiwan, Hsinchu, Hsinchu Science Park | 300 | 90,70,22[131] | 20,000 | Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC | |||
| SPIL (formerlyProMOS) | ProMOS Fab 4[132][133] | Taiwan, Taichung | 1.6 | 300 | 70 | Advanced Packaging | |||
| Macronix (formerlyProMOS)[134] | Fab 5 | Taiwan, Hsinchu[135] | 300 | 50,000 | |||||
| Macronix[134] | Fab 2 | Taiwan | 200 | 48,000 | |||||
| Hon Young Semiconductor (formerlyMacronix[134]) | Fab 1[136] | 150 | 800-400 | 40,000 | Foundry,SiC, Automotive MOSFETs, MEMS | ||||
| Renesas[137] | Naka Factory | Japan | 2009 | 300 | 28[138] | ||||
| Renesas[137] | Takasaki Factory | Japan, 111, Nishiyokotemachi, Takasaki-shi, Gunma, 370-0021 | |||||||
| Renesas[137] | Kawashiri Factory | Japan, 1-1-1, Yahata, Minami-ku, Kumamoto-shi, Kumamoto, 861–4195 | |||||||
| Renesas[137] | Saijo Factory | Japan, 8–6, Hiuchi, Saijo-shi, Ehime, 793-8501 | |||||||
| Renesas –Intersil[137] | Palm Bay | United States, Florida, Palm Bay | |||||||
| Bosch (formerlyTSI Semiconductors[139]) (formerly Renesas) | Roseville fab, M-Line, TD-Line, K-Line[140][3] | United States, California, Roseville | 1992, 1985[3] | 200 | |||||
| TDK – Micronas | FREIBURG[141][142] | Germany, 19 D-79108, Hans-Bunte-Strasse | |||||||
| TDK(formerlyRenesas) | Tsuruoka Higashi[143][144] | 125[145] | |||||||
| TDK – Tronics | United States, Texas, Addison[146] | ||||||||
| Silanna (formerly Sapphicon Semiconductor) | Australia, New South Wales, Sydney[3] | 0.030 | 1965,1989[3] | 150 | |||||
| Silanna (formerly Sapphicon Semiconductor) (formerlyPeregrine Semiconductor) (formerlyIntegrated Device Technology) | Australia, New South Wales, Sydney | 150 | 500, 250 | RF CMOS,SOS, foundry | |||||
| Murata Manufacturing[148] | Nagano[145] | Japan | 0.100 | Murata en France (ex IPDIA)[149] | SAW filters[145] | ||||
| Murata Manufacturing[148] | Otsuki[145] | Japan | |||||||
| Murata Manufacturing[148] | Kanazawa | Japan | 0.111 | SAW filters[145] | |||||
| Murata Manufacturing(formerlyFujifilm)[150][151] | Sendai | Japan, Miyagi Prefecture | 0.092[145] | MEMS[152] | |||||
| Murata Manufacturing[150] | Yamanashi | Japan, Yamanashi Prefecture | |||||||
| Murata Manufacturing[153] | Yasu | Japan, Shiga Prefecture, Yasu | |||||||
| Murata Electronics (Finland)[154] (formerly VTI, since 1979Vaisalas int. semicon. line)[155] | Vantaa | Finland | 2012,[156] expanded 2019[157] | 3D MEMS accelerometers, inclinometers, pressure sensors, gyros, oscillators etc.[158] | |||||
| Mitsumi Electric[159] | Semiconductor Works #3 | Japan, Atsugi Operation Base | 2000 | ||||||
| Mitsumi Electric[159] | Japan, Atsugi Operation Base | 1979 | |||||||
| Sony[160] | Kagoshima Technology Center[87] | Japan, Kagoshima | 1973 | 100, 125, 150 | 2000–500 | 110,000 | Bipolar CCD, MOS,MMIC,SXRD | ||
| Sony[160] | Oita Technology Center | Japan, Oita | 2016 | CMOS Image Sensor | |||||
| Sony[160] | Nagasaki Technology Center[87] | Japan, Nagasaki | 1987 | 150 | 1000-350 | 80,000 | MOS LSI, CMOS Image Sensors, SXRD | ||
| Sony[160] | Kumamoto Technology Center | Japan, Kumamoto | 2001 | CCD Image Sensors, H-LCD, SXRD | |||||
| Sony[160] | Shiroishi Zao Technology Center | Japan, Shiroishi | 1969 | SemiconductorLasers | |||||
| Sony | Sony Shiroishi Semiconductor Inc. | Japan, Miyagi | Semiconductor Lasers[161] | ||||||
| Sony(formerly Renesas) (formerly NEC Electronics)(formerly NEC)[160][162][163] | Yamagata Technology Center[87] | Japan, Yamagata | 2014 (Sony) | 100, 125, 150, 200 | 3000, 2000, 800 | MOS, bipolar, CMOS Image Sensor,eDRAM (formerly) | |||
| SK Hynix[164] | China, Chongqing | ||||||||
| SK Hynix[164] | China, Chongqing | ||||||||
| SK Hynix[165][166] | South Korea, Cheongju, Chungcheongbuk-do | Under construction[167] | NAND Flash | ||||||
| SK Hynix[166] | South Korea, Cheongju | Under construction | NAND Flash | ||||||
| SK Hynix | HC1 | China, Wuxi | 300 | 100,000[20] | DRAM | ||||
| SK Hynix | HC2 | China, Wuxi | 300 | 70,000[20] | DRAM | ||||
| SK Hynix[166] | M16 | South Korea, Icheon | 3.13 (13.4 total planned) | 2021[168] | 300 | 10 (EUV) | 15,000–20,000 (initial) | DRAM | |
| LG Innotek[169] | Paju | South Korea, 570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842 | LED Epi-wafer, Chip, Package | ||||||
| ON Semiconductor(formerlyGlobalFoundries)(formerlyIBM)[170][171][172] | United States, New York, East Fishkill | 2.5,+.29 (future)[173] | 2002 | 300 | 90–22,14 | 12,000–15,000[173] | Foundry,RF SOI,SOIFinFET (former), SiGe,SiPh | ||
| ON Semiconductor(formerlyLSI) | Gresham[174] | United States, Oregon, Gresham | 200 | 110 | |||||
| ON Semiconductor (formerlyFairchild Semiconductor) (formerlyNational Semiconductor) (formerlyFairchild Semiconductor) | United States, Pennsylvania, Mountain Top | 1960–1997 | 200 | 350 | |||||
| ON Semiconductor(formerlyTESLA) | Roznov | Czech Republic, Zlín, Rožnov pod Radhoštěm | 1956 | 150, 200 | 1000 | 80,000 | Si,SiC | ||
| ON Semiconductor(formerlyMotorola) | ISMF | Malaysia, Seremban | 150 | 350 | 80,000 | Discrete | |||
| ON Semiconductor(formerlyFujitsu)[175][176] | Aizu Wakamatsu Plant[177][87] | Japan, Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502 | 1970[88] | 150, 200[178][179][180][181] | 2000-130 | Memory, Logic | |||
| JS Foundry K.K.(formerlyON Semiconductor)(formerlySanyo)[182][183] | Niigata[87] | Japan, Niigata | 125, 150 | 2000–600,350 | 120,000 | CMOS, bipolar, BiCMOS | |||
| LA Semiconductor(formerlyON Semiconductor)(formerlyAMI Semiconductor) | Pocatello[184] | United States, Idaho, Pocatello | 1997[185] | 200 | 350 | ||||
| Diodes Incorporated[186] (formerlyON Semiconductor) (formerlyFairchild Semiconductor) (formerlyNational Semiconductor) (formerlyFairchild Semiconductor) | SPFAB | United States, Maine, South Portland | 1960–1997 | 200 | 350 | ||||
| Diodes Incorporated[187] (formerlyZetex Semiconductors) | OFAB | UK, England, Greater Manchester, Oldham | 150 | ||||||
| Diodes Incorporated (formerlyBCD Semi)[188] | China | 150 | 4000–1000 | ||||||
| Lite-On Optoelectronics[189] | China, Tianjin | ||||||||
| Lite-On Optoelectronics[189] | Thailand, Bangkok | ||||||||
| Lite-On Optoelectronics[189] | China, Jiangsu | ||||||||
| Lite-On Semiconductor[190] | Keelung Plant | Taiwan, Keelung | 1990 | 100 | Thyristor, DIscrete | ||||
| Lite-On Semiconductor[190] | Hsinchu Plant | Taiwan, Hsinchu | 2005 | Bipolar BCD, CMOS | |||||
| Lite-On Semiconductor[190] | Lite-On Semi (Wuxi) | China, Jiangsu | 2004 | 100 | Discrete | ||||
| Lite-On Semiconductor[190] | Wuxi WMEC Plant | China, Jiangsu | 2005 | Discrete, Power, Optical ICs | |||||
| Lite-On Semiconductor[190] | Shanghai (SSEC) Plant | China, Shanghai | 1993 | 76 | Fab, Assembly | ||||
| Trumpf[191] (formerly Philips Photonics) | Germany, Baden-Württemberg, Ulm | VCSEL | |||||||
| Philips[192] | Netherlands, North Brabant, Eindhoven | 150, 200 | 30,000 | R&D, MEMS | |||||
| Newport Wafer Fab[193] (formerlyInfineon Technologies) | FAB11 | UK, Wales, Newport | 200[194] | 700-180[194] | 32,000[194] | Foundry, Compound Semiconductors, IC, MOSFET, IGBT[195] | |||
| Nexperia (formerlyNXP Semiconductors)(formerlyPhilips) | Hamburg site[196] | Germany, Hamburg | 1953 | 200 | 35,000 | Small-signal andbipolar discrete devices | |||
| Nexperia (formerlyNXP Semiconductors)(formerlyPhilips)(formerlyMullard) | Manchester[196] | UK, England, Greater Manchester, Stockport | 1987? | 150, 200 | 24,000 | GaN FETs, TrenchMOS MOSFETs | |||
| NXP Semiconductors(formerlyPhilips) | ICN8 | Netherlands, Gelderland, Nijmegen | 200 | 40,000+[197] | SiGe | ||||
| NXP Semiconductors -SSMC | SSMC | Singapore | 1.7[3] | 2001[3] | 200 | 120 | 53,000 | SiGe | |
| NXP Semiconductors – Jilin Semiconductor | China, Jilin | 130 | |||||||
| NXP Semiconductors (formerlyFreescale Semiconductor)(formerlyMotorola) | Oak Hill Fab[198] | United States, Texas, Austin | 0.8[199] | 1991 | 200 | 250 | |||
| NXP Semiconductors (formerlyFreescale Semiconductor)(formerlyMotorola) | Chandler Fab[200] | United States, Arizona, Chandler[201] | 1.1[202] +0.1 (GaN) | 1993 | 150 (GaN), 200 | 180 | GaN-on-SiC pHEMT | ||
| NXP Semiconductors (formerlyFreescale Semiconductor)(formerlyMotorola) | ATMC[203] | United States, Texas, Austin | 1995 | 200 | 90 | ||||
| AWSC | Taiwan, Tainan[3] | 1999[3] | 150 | 12,000 | Foundry,GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT,InGaP | ||||
| Skyworks Solutions[204](formerlyConexant)(formerlyRockwell) | United States, California, Newbury Park | 100, 150 | Compound Semiconductors (GaAs,AlGaAs,InGaP) | ||||||
| Skyworks Solutions[204] (formerly Alpha Industries) | United States, Massachusetts, Woburn | 100, 150 | RF/cellular components (SiGe, GaAs) | ||||||
| Skyworks Solutions[204] | Japan, Osaka | SAW, TC-SAW Filters | |||||||
| Skyworks Solutions[204] | Japan, Kadoma | SAW, TC-SAW Filters | |||||||
| Skyworks Solutions[204] | Singapore, Bedok South Road | SAW, TC-SAW Filters | |||||||
| Win Semiconductor | Fab A[205] | Taiwan, Taoyuan City | 150[206] | 2000–10 | Foundry,GaAs | ||||
| Win Semiconductor | Fab B[205] | Taiwan, Taoyuan City | 150[206] | 2000–10 | Foundry,GaAs,GaN | ||||
| Win Semiconductor | Fab C | Taiwan, Taoyuan[3] | 0.050, 0.178 | 2000, 2009[3] | 150 | Foundry,GaAs | |||
| ams[207] | FAB B | Austria, Styria, Unterpremstätten | 200 | 350 | Optoelectronics | ||||
| ams Osram (formerly Osram Opto Semiconductors) | Malaysia, Kulim, Kulim Hi-Tech Park | 0.350, 1.18[208] | 2017, 2020 (second phase, planned)[209][210] | 150 | LEDs | ||||
| ams Osram (formerly Osram Opto Semiconductors) | Malaysia, Penang[211][212] | 2009 | 100 | LEDs | |||||
| ams Osram (formerly Osram Opto Semiconductors) | Germany, Bavaria, Regensburg[213] | 2003, 2005 (second phase)[214] | LEDs | ||||||
| Winbond | Memory Product Foundry[215] | Taiwan, Taichung | 300 | 46 | |||||
| Winbond | CTSP Site[216][217] | Taiwan, No. 8, Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881 | 300 | ||||||
| Winbond[218] | Planned | 300 | |||||||
| Vanguard International Semiconductor | Fab 1[136] | Taiwan, Hsinchu | 0.997[3] | 1994[3] | 200 | 500, 350, 250 | 55,000 | Foundry, CMOS | |
| Vanguard International Semiconductor(formerlyWinbond) | Fab 2 (formerly Fab 4&5)[219] | Taiwan, Hsinchu | 0.965[3] | 1998[3] | 200 | 55,000 | Foundry | ||
| Vanguard International Semiconductor Corporation (formerlyGlobalFoundries)(formerlyChartered) | Fab 3E[220] | Singapore | 1.3[3] | 200 | 180 | 34,000 | Foundry | ||
| TSMC | Fab 2[221][136] | Taiwan, Hsinchu | 0.735[3] | 1990[3] | 150 | 800, 600, 500 | 88,000[222][3] | Foundry, CMOS | |
| TSMC | Fab 3[136] | Taiwan, Hsinchu | 2[3] | 1995[3] | 200 | 500, 350, 250 | 100,000[3] | Foundry, CMOS | |
| TSMC | Fab 5[136] | Taiwan, Hsinchu | 1.4[3] | 1997[3] | 200 | 350, 250, 180 | 48,000[3] | Foundry, CMOS | |
| TSMC | Fab 6 | Taiwan, Tainan | 2.1[3] | 2000, January; 2001[223] | 200, 300 | 180–? | 99,000[3] | Foundry | |
| TSMC(formerly TASMC) (formerlyAcer Semiconductor Manufacturing Inc.) (formerlyTexas Instruments)[224][225][226] | Fab 7[227] | Taiwan | 200 | 350, 250, 220, 180 | 33,000 | Foundry (current) DRAM (former), Logic (former) | |||
| TSMC(formerly WSMC) | Fab 8[228] | Taiwan, Hsinchu | 1.6[3] | 1998[3] | 200 | 250, 180 | 85,000[3] | Foundry | |
| TSMC(formerly WSMC)[229] | 2000 | 200 | 250, 150 | 30,000 | Foundry | ||||
| TSMC China Company | Fab 10 | China, Shanghai | 1.3[3] | 2004[3] | 200 | 74,000 | Foundry | ||
| TSMC | Fab 12 | Taiwan, Hsinchu | 5.2, 21.6 (total, all phases combined)[3] | 2001[3] | 300 | 150–28 | 77,500–123,800 (all phases combined)[3] | Foundry | |
| TSMC | Fab 12 (P4) | Taiwan, Hsinchu | 6[3] | 2009[3] | 300 | 20 | 40,000[3] | Foundry | |
| TSMC | Fab 12 (P5) | Taiwan, Hsinchu | 3.6[3] | 2011[3] | 300 | 20 | 6,800[3] | Foundry | |
| TSMC | Fab 12 (P6) | Taiwan, Hsinchu | 4.2[3] | 2013[3] | 300 | 16 | 25,000 | Foundry | |
| TSMC | Fab 14 | Taiwan, Tainan | 5.1[3] | 2002,[223] 2004[3] | 300 | 20 | 82,500[3] | Foundry | |
| TSMC | Fab 14 (B) | Taiwan, Tainan | 300 | 16 | 50,000+[230] | Foundry | |||
| TSMC | Fab 14 (P3)[3] | Taiwan, Tainan | 3.1[3] | 2008[3] | 300 | 16 | 55,000[3] | Foundry | |
| TSMC | Fab 14 (P4)[3] | Taiwan, Tainan | 3.750[3] | 2011[3] | 300 | 16 | 45,500[3] | Foundry | |
| TSMC | Fab 14 (P5)[3] | Taiwan, Tainan | 3.650[3] | 2013[3] | 300 | 16 | Foundry | ||
| TSMC | Fab 14 (P6)[3] | Taiwan, Tainan | 4.2[3] | 2014[3] | 300 | 16 | Foundry | ||
| TSMC | Fab 14 (P7)[3] | Taiwan, Tainan | 4.850[3] | 2015[3] | 300 | 16 | Foundry | ||
| TSMC | Fab 15[231] | Taiwan, Taichung | 9.3 | 2011 | 300 | 20 | 100,000+(166,000 estimate)[232][230][233] | Foundry | |
| TSMC | Fab 15 (P1)[3] | Taiwan, Taichung | 3.125[3] | 2011 | 300 | 4,000[3] | Foundry | ||
| TSMC | Fab 15 (P2)[3] | Taiwan, Taichung | 3.150[3] | 2012[3] | 300 | Foundry | |||
| TSMC | Fab 15 (P3)[3] | Taiwan, Taichung | 3.750[3] | 2013[3] | 300 | Foundry | |||
| TSMC | Fab 15 (P4)[3] | Taiwan, Taichung | 3.800[3] | 2014[3] | 300 | Foundry | |||
| TSMC | Fab 15 (P5)[3] | Taiwan, Taichung | 9.020[3] | 2016[3] | 300 | 35,000 | Foundry | ||
| TSMC | Fab 18 (P1-P3) | Taiwan, Southern Taiwan Science Park[234][235] | 17.08 | 2020 (P7 under construction) | 300 | 5[236] | 120,000 | Foundry | |
| TSMC | Fab 18 (P4-P6) | Taiwan, Southern Taiwan Science Park | 2022 (planned), under construction | 300 | 3[20][237][238] | 120,000 | Foundry | ||
| TSMC | Fab 21 (P1) | United States, Arizona, Phoenix | 12[239] | Q4 2024[240] | 300 | 5 & 4[241] | 20,000[241] | Foundry | |
| TSMC | Fab 21 (P2) | United States, Arizona, Phoenix | 65 (shared for Fab 21 site)[240] | 2H 2027 (planned), under construction[242][240][243] | 3[240] | Foundry | |||
| TSMC | Fab 21 (P3) | United States, Arizona, Phoenix | 65 (shared for Fab 21 site)[240] | 2029-2030 (planned), under construction[240][243] | 1.6 & 2[240] | Foundry | |||
| Epistar | Fab F1[244] | Taiwan, Longtan Science Park | LEDs | ||||||
| Epistar | Fab A1[244] | Taiwan, Hsinchu Science Park | LEDs | ||||||
| Epistar | Fab N2[244] | Taiwan, Hsinchu Science Park | LEDs | ||||||
| Epistar | Fab N8[244] | Taiwan, Hsinchu Science Park | LEDs | ||||||
| Epistar | Fab N1[244] | Taiwan, Hsinchu Science Park | LEDs | ||||||
| Epistar | Fab N3[244] | Taiwan, Hsinchu Science Park | LEDs | ||||||
| Epistar | Fab N6[244] | Taiwan, Chunan Science Park | LEDs | ||||||
| Epistar | Fab N9[244] | Taiwan, Chunan Science Park | LEDs | ||||||
| Epistar | Fab H1[244] | Taiwan, Central Taiwan Science Park | LEDs | ||||||
| Epistar | Fab S1[244] | Taiwan, Tainan Science Park | LEDs | ||||||
| Epistar | Fab S3[244] | Taiwan, Tainan Science Park | LEDs | ||||||
| Epistar(formerly TSMC)[245][246][247] | Taiwan, Hsin-Chu Science Park | 0.080 | 2011, second half | LEDs | |||||
| GCS | United States, California, Torrance[3] | 1999[3] | 100 | 6,400 | Foundry,GaAs,InGaAs,InGaP,InP,HBT,PICs | ||||
| Bosch | Germany, Baden-Württemberg, Reutlingen | 1995[248] | 150 | ASIC, analog, power,SiC | |||||
| Bosch | Germany, Saxony, Dresden | 1.0[249] | 2021 | 300 | 65 | ||||
| Bosch | WaferFab | Germany, Baden-Württemberg, Reutlingen | 0.708[250] | 2010[248] | 200 | 30,000 | ASIC, analog, power, MEMS | ||
| STMicroelectronics | AMK8 (second, newer fab) | Singapore, Ang Mo Kio | 1995 | 200 | |||||
| STMicroelectronics (formerly SGS Microelettronica) | AMJ9 (first fab) | Singapore, Ang Mo Kio | 1984[251] | 150, 200 | 6" 14 kpcs/day, 8" 1.4 kpcs/day | Power-MOS/ IGBT/ bipolar/ CMOS | |||
| X-Fab | Erfurt | Germany, Thuringia, Erfurt | 1985[3] | 200[252] | 1000-600[252] | 11200–[252] | Foundry, InP | ||
| X-Fab(formerlyZMD) | Dresden | Germany, Saxony, Dresden | 0.095[3] | 1985[3] | 200[253] | 1000-350[253] | 6000–[253] | Foundry, CMOS, GaN-on-Si | |
| X-Fab(formerly MEMS Foundry Itzehoe) | Itzehoe | Germany, Schleswig-Holstein, Itzehoe | 200[254] | 13000–[254] | Foundry, MEMS | ||||
| X-Fab(formerly 1st Silicon)[255][256] | Kuching | Malaysia, Kuching | 1.89[3] | 2000[3] | 200[257] | 350-130[257] | 30,000–[257] | Foundry | |
| X-Fab (formerlyTexas Instruments) | Lubbock | United States, Texas, Lubbock | 0.197[3] | 1977[3] | 150, 200[258] | 1000-600[258] | 15000–[258] | Foundry, SiC | |
| X-Fab France SAS (formerlyAltis Semiconductor)(formerlyIBM)[259] | ACL-AMF | France, Île-de-France, Corbeil-Essonnes | 1991, 1964[3] | 200 | 350-110 | Foundry, CMOS,RF SOI | |||
| IXYS | Germany, Hesse, Lampertheim[260] | IGBT[260] | |||||||
| IXYS | UK, England, Wiltshire, Chippenham[260] | ||||||||
| IXYS | United States, Massachusetts[260] | ||||||||
| IXYS | United States, California[260] | ||||||||
| Samsung | V1-Line[261] | South Korea, Hwaseong | 6 | 2020, February 20 | 300 | 7 | Foundry | ||
| Samsung | S5-Line | South Korea, Pyeongtaek | 300 | Foundry | |||||
| Samsung | S4-Line | South Korea, Hwaseong | 300 | Foundry | |||||
| Samsung | S3-Line | South Korea, Hwaseong | 10.2, 16.2 (planned)[262][263] | 2017[262] | 300 | 10 | 200,000 | Foundry | |
| Samsung | S1-Line | South Korea, Giheung | 33 (total) | 2005 (second phase), 1983 (first phase)[264][265] | 300 | 65–7 | 62,000 | Foundry, CMOS, FDSOI | |
| Samsung | Line-6 | South Korea, Giheung | 100, 150, 200 | 1500–500,180–65 | Foundry, CMOS, BiCMOS | ||||
| Samsung | S6-Line | United States, Texas, Taylor | 300 | Foundry | |||||
| Samsung | S2-Line | United States, Texas, Austin | 16[266][267] | 2011 | 300 | 65–11 | 92,000 | Foundry, CMOS, FDSOI | |
| Samsung | Pyeongtaek[268][269][262] | South Korea, Pyeongtaek | 14.7, 27 (total)[270][267][271][272][273][274][275][167] | 2017, July 6 | 300 | 14 | 450,000[276] | V-NAND, DRAM | |
| Samsung | Samsung China Semiconductor[277] | China, Shaanxi Province | DDR Memory | ||||||
| Samsung | F1x1[278][262] | China, Xian | 2.3[279] | 2014 (first phase, second phase is under review)[262] | 300 | 20 | 100,000 | VNAND | |
| Samsung | Giheung Campus[280] | South Korea, Gyeonggi-do, Yongin | LEDs | ||||||
| Samsung | Hwasung Campus[280] | South Korea, Gyeonggi-do, Hwaseong | LEDs | ||||||
| Samsung | Tianjin Samsung LED Co., Ltd.[280] | China, Tianjin, Xiqing | LEDs | ||||||
| Seagate | United States, Minnesota, Minneapolis[281] | Read/write heads, | |||||||
| Seagate | UK, Northern Ireland[282][283][284][285] | Read/write heads | |||||||
| Broadcom Inc. (formerly Avago) | United States, Colorado, Fort Collins[286] | ||||||||
| Wolfspeed (formerlyCree Inc.)[287] | Durham | United States, North Carolina, Durham | Compound Semiconductors, LEDs | ||||||
| Wolfspeed (formerlyCree Inc.)[288] | Research Triangle Park | United States, North Carolina | GaNHEMT RF ICs | ||||||
| SMART Modular Technologies | Brazil, São Paulo, Atibaia | 2006 | Packaging | ||||||
| Infineon Technologies | Villach | Austria, Carinthia, Villach | 1970[289] | 100, 150, 200, 300 | MEMS, SiC,GaN | ||||
| Infineon Technologies | Dresden | Germany, Saxony, Dresden | 3[290] | 1994–2011[291] | 200, 300 | 90 | |||
| Infineon Technologies | Kulim[292] | Malaysia, Kulim Hi-Tech Park | 2006[293] | 200, 300 | 50,000 | Power Semiconductor,GaN,SiC | |||
| Infineon Technologies | Kulim 2 | Malaysia, Kulim Hi-Tech Park | 2015 | 200, 300 | 50,000 | Power Semiconductor,GaN,SiC | |||
| Infineon Technologies | Kulim 3 | Malaysia, Kulim Hi-Tech Park | 8[294] | 2025 | 200 | Power Semiconductor,GaN,SiC | |||
| Infineon Technologies | Regensburg[295] | Germany, Bavaria, Regensburg | 1959 | ||||||
| Infineon Technologies | Cegled[296] | Hungary, Pest, Cegléd | |||||||
| Infineon Technologies(formerlyCypress Semiconductor)(formerlySpansion)(formerlyAMD) | Fab 25 | United States, Texas, Austin[297] | 1.5 | 1995 | 200 | ||||
| D-Wave Systems[298] | Superconducting Foundry[299] | Quantum Processing Units (QPUs)[299] | |||||||
| GlobalFoundries(formerlyAMD) | Fab 1 Module 1[300] | Germany, Saxony, Dresden | 3.6[3] | 2005 | 300 | 45-22 | 35,000[3] | Foundry, SOI, FDSOI | |
| GlobalFoundries(formerlyAMD) | Fab 1 Module 2 | Germany, Saxony, Dresden | 4.9[3] | 1999 | 300 | 45-22 | 25,000[3] | Foundry, SOI | |
| GlobalFoundries | Fab 1 Module 3 | Germany, Saxony, Dresden | 2.3[3] | 2011[3] | 300 | 45-22 | 6,000[3] | Foundry, SOI | |
| GlobalFoundries(formerlyChartered) | Fab 2[220] | Singapore | 1.3[3] | 1995[3] | 200 | 600-350 | 56,000[3] | Foundry, SOI | |
| GlobalFoundries(formerlyChartered) | Fab 3/5[220] | Singapore | 0.915, 1.2[3] | 1997, 1995[3] | 200 | 350-180 | 54,000 | Foundry, SOI | |
| GlobalFoundries(formerlyChartered) | Fab 6[220] (merged into Fab 7) | Singapore | 1.4[3] | 2000[3] | 200,300 (merged) | 180-110 | 45,000 | Foundry, SOI | |
| GlobalFoundries(formerlyChartered) | Fab 7[300] | Singapore | 4.6[3] | 2005[3] | 300 | 130, 110, 90, 65, 40 | 50,000 | Foundry,Bulk CMOS,RF SOI | |
| GlobalFoundries | Fab 8[300] | United States, New York, Malta | 4.6, 2.1,(1, future)[301]13+ (total)[173][302] | 2012, 2014[3] | 300 | 28, 22, 14, 12 | 60,000(+12,500 future) | Foundry,High-K Metal Gate,[303]SOIFinFET | |
| GlobalFoundries (formerly IBM[304]) | Fab 9 | United States, Vermont, Essex Junction | 1957[305] | 200 | 350-90 | 50,000[306] | Foundry, SiGe, RF SOI, GaN[306] | ||
| GlobalFoundries | Technology Development Center[3] | United States, New York, Malta | 1.5[3] | 2014[3] | |||||
| SUNY Poly CNSE | NanoFab 300 North[307] | United States, New York, Albany | 0.175, 0.050 | 2004, 2005 | 300 | 65,45,32,22 | |||
| SUNY Poly CNSE | NanoFab 200[308] | United States, New York, Albany | 0.016 | 1997 | 200 | ||||
| SUNY Poly CNSE | NanoFab Central[307] | United States, New York, Albany | 0.150 | 2009 | 300 | 22 | |||
| Skorpios Technologies(formerly Novati)(formerlyATDF)(formerlySEMATECH) | United States, Texas, Austin[3][309] | 0.065 | 1989[3] | 200 | 10,000 | MEMS, photonics, foundry | |||
| Opto Diode | United States, California, Camarillo[310] | LED, Photodiode, PbS/PbSe Infrared Detectors | |||||||
| Optek Technology[311] | 1968 | 100, 150 | GaAs, LEDs | ||||||
| II-VI(formerlyOclaro)(formerlyBookham) (formerlyNORTHERN TELECOM SEMICONDUCTOR NORTHERN TELECOM EUROPE[311])(formerlyJDS Uniphase)(formerly Uniphase) | Semiconductor Lasers,Photodiodes | ||||||||
| Infinera | United States, California, Sunnyvale[312][313] | ||||||||
| Rogue Valley Microdevices[314][315][316] | United States, Oregon, Medford | 2003 | 50.8–300 | MEMS Foundry, Thin Films Foundry, Silicon Wafers, Wafer Services, MEMS R&D | |||||
| Atomica | Fab 1 | United States, California, Goleta | 2000 | 150, 200 | 350 | 20,000 | Foundry: MEMS,Photonics, Sensors, Biochips | ||
| Sensera | uDev-1 | United States, Massachusetts, Woburn | 2014 | 150 | 700 | 1,000 | MEMS, MicroDevice assembly | ||
| Rigetti Computing | Fab-1[317][318][319] | United States, California, Fremont | 130 | Quantum Processors | |||||
| Polar Semiconductor[320] | FAB 1,2,3 | United States, Minnesota, Bloomington | 200 | BCD, HV, GMR | |||||
| Orbit Semiconductor[311] | 100 | CCD, CMOS | |||||||
| Entrepix | United States, Arizona, Tempe[3] | 2003[3] | |||||||
| Technologies and Devices International | United States, Florida, Silver Springs[3] | 2002[3] | |||||||
| Soraa Inc | United States, California[321][322] | ||||||||
| Soraa Laser Diode[321] | |||||||||
| Mirrorcle Technologies | United States, California, Richmond[323] | ||||||||
| HTE LABS | HTE LABS | United States, California, San Jose | 0.005 | 2009 | 100, 150 | 4000–1000 | 1,000 | Pure Play Wafer Foundry -BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com | |
| Unitec do Brasil | Brazil, Minas Gerais, Ribeirão das Neves | Planned | |||||||
| Unitec Blue[324] | Argentina, Buenos Aires Province, Chascomús | 0.3(1.2 planned)[325] | 2013 | RFID,SIM,EMV | |||||
| Everlight | Yuan-Li Plant | Taiwan, Miao-Li | LEDs | ||||||
| Everlight | Pan-Yu Plant | China | LEDs | ||||||
| Everlight | Tu-Cheng Plant | Taiwan, Taipei Country | LEDs | ||||||
| Optotech[326] | Taiwan, Hsinchu | LEDs | |||||||
| Arima Optoelectronics | Taiwan, Hsinchu[3] | 1999[3] | |||||||
| Episil Semiconductor | Taiwan, Hsinchu[3] | 1992, 1990, 1988[3] | |||||||
| Episil Semiconductor | Taiwan, Hsinchu[3] | 1992, 1990, 1988[3] | |||||||
| Creative Sensor Inc.Archived 2017-07-07 at theWayback Machine[327][328] | NanChang Creative Sensor | China, Jiangxi | 2007 | Image Sensors | |||||
| Creative Sensor Inc.Archived 2017-07-07 at theWayback Machine[327] | Wuxi Creative Sensor | China, Jiangsu | 2002 | ||||||
| Creative Sensor Inc.Archived 2017-07-07 at theWayback Machine[327] | Wuxi Creative Sensor | Taiwan, Taipei City | 1998 | ||||||
| Visera Technologies[329] | Headquarters Phase I | Taiwan, Hsinchu Science-based Industrial Park | 2007, September | CMOS Image Sensors | |||||
| Panjit | Taiwan, Kaohsiung[3] | 0.1 | 2003[3] | ||||||
| Nanosystem Fabrication Facility | Hong Kong[330] | ||||||||
| GTA Semiconductor (formerly ASMC)[331][332] | Fab 2, Fab 3[333] | China, Shanghai, Xuhui District | 200 | 350, 180, 150[334] | 55333 | HV Analog, Power | |||
| GTA Semiconductor | Fab 5, Fab 6 | China, Shanghai, Pudong New Area | 5.1[335] | 2020 | 150, 200, 300 | 115000 | |||
| Shanghai Belling[336] | China, Shanghai | 150 | 1200 | BiCMOS, CMOS | |||||
| SiSemi[337] | China, Shenzhen, Longgang High-tech Industrial Park[338] | 2004 | 130 | Power semiconductors, LED drivers,bipolar power transistors,power MOSFETs | |||||
| SiSemi[338] | 1997 | 100 | Transistors | ||||||
| CRMicro(formerly CSMC)[339] | Fab 1 | 1998[3] | 150[340] | 60,000[3] | HV Analog, MEMS, Power, Analog, Foundry | ||||
| CRMicro(formerly CSMC) | Fab 2 | China, Wuxi | 2008[3] | 200[340] | 180, 130 | 40,000[3] | HV Analog, Foundry | ||
| CRMicro(formerly CSMC) | Fab 3 | 1995[3] | 200[340] | 130 | 20,000[3] | ||||
| CRMicro(formerly CSMC) | Fab 5 | 2005[3] | 30,000[3] | ||||||
| Nexchip[20] | N1[341] | China, Hefei | Q4 2017 | 300 | 150-40 | 40,000 | Display Drivers IC[342] | ||
| Nexchip[20] | N2[341] | China, Hefei | Under construction | 300 | 40,000 | ||||
| Nexchip[20] | N3[341] | China, Hefei | Under construction | 300 | 40,000 | ||||
| Nexchip[20] | N4[341] | China, Hefei | Under construction | 300 | 40,000 | ||||
| Wandai[20] | CQ | China, Chongqing | Under construction | 300 | 20,000 | ||||
| San'an Optoelectronics[343] | Tianjin San'an Optoelectronics Co., Ltd. | China, Tianjin | LEDs | ||||||
| San'an Optoelectronics | Xiamen San'an Optoelectronics Technology Co., Ltd. | China, Xiamen | LEDs | ||||||
| San'an Optoelectronics | Xiamen San'an Optoelectronics Co., Ltd. | China, Xiamen | LEDs | ||||||
| San'an Optoelectronics | Wuhu Anrui Optoelectronics Co., Ltd. | China, Wuhu | LEDs | ||||||
| San'an Optoelectronics | Anrui San'an Optoelectronics Co., Ltd. | China, Wuhu | LEDs | ||||||
| San'an Optoelectronics | Luminus Summary | United States | LEDs | ||||||
| San'an Optoelectronics | Quanzhou San'an Semiconductor Technology Co., Ltd. | China, Nan'an | LEDs | ||||||
| Sanan IC[344] | Xiamen Fab[345] | China, Xiamen | 0.00785 | 2014 | 150 | 30,000 | SAW filters, Foundry,GaA,GaN, RF, Power | ||
| Sanan IC | Quanzhou Fab | China, Quanzhou | 4.6 | 2017 | 150 | 8,000 | SAW filters, Foundry,GaA, RF | ||
| Sanan IC | Changsha Fab | China, Changsha | 2.3 | 2021 | 150 | 30,000 | Foundry,GaN,SiC, Power | ||
| Hua Hong Semiconductor | HH Fab7 | China, Wuxi | 300 | 90-55 | 95,000[346] | Foundry, eNVM, RF, Mixed Signal, Logic,Power Management,Power Discrete | |||
| Hua Hong Semiconductor | HH Fab1 | China, Shanghai, Jinqiao | 200 | 95 | 65,000[347] | Foundry, eNVM, RF, Mixed Signal, Logic,Power Management,Power Discrete | |||
| Hua Hong Semiconductor | HH Fab2 | China, Shanghai, Zhangjiang | 200 | 180 | 60,000[347] | Foundry, eNVM, RF, Mixed Signal, Logic,Power Management,Power Discrete | |||
| Hua Hong Semiconductor | HH Fab3 | China, Shanghai, Zhangjiang | 200 | 90 | 53,000[347] | Foundry, eNVM, RF, Mixed Signal, Logic,Power Management,Power Discrete | |||
| Hua Hong Semiconductor (HLMC) | HH Fab5[348] | China, Shanghai, Zhangjiang | 2011 | 300 | 65/55-40 | 35,000 | Foundry | ||
| Hua Hong Semiconductor (HLMC) | HH Fab6 | China, Shanghai, Kangqiao | 2018 | 300 | 28/22 | 40,000 | Foundry | ||
| HuaLei Optoelectronic | China | LEDs[349] | |||||||
| Sino King Technology[19] | China, Hefei | 2017 | DRAM | ||||||
| APT Electronics | China, Guangzhou[3] | 2006[3] | |||||||
| Aqualite | China, Guangzhou[3] | 2006[3] | |||||||
| Aqualite | China, Wuhan[3] | 2008[3] | |||||||
| Xiamen Jaysun Semiconductor Manufacturing | Fab 101 | China, Xiamen[3] | 0.035 | 2011[3] | |||||
| Xiyue Electronics Technology | Fab 1 | China, Xian[3] | 0.096 | 2007[3] | |||||
| Hanking Electronics | Fab 1 | China, Fushun | 2018 | 200 | 10,000 – 30,000 | MEMS FoundryArchived 2021-03-08 at theWayback Machine, MEMS DesignArchived 2021-03-08 at theWayback Machine MEMS Sensors (Inertial, Pressure,Ultrasound, IoT Motion Sensors | |||
| CanSemi[350] | Phase I | China, Guangzhou | 4 | 2019[351] | 300 | 180–90[352] | 20,000 | Power, Analog, Power Discrete | |
| CanSemi | Phase II | China, Guangzhou | 2022 | 300 | 90-55 | 20,000 | |||
| CanSemi | Phase III | China, Guangzhou | 2.4[353] | Planned | 300 | 55-40 | 40,000 | Automotive, IoT | |
| SensFab | Singapore[3] | 1995[3] | |||||||
| MIMOS Semiconductor | Malaysia, Kuala Lumpur[3] | 0.006, 0.135 | 1997, 2002[3] | ||||||
| Silterra Malaysia | Fab1 | Malaysia, Kedah, Kulim | 1.6 | 2000 | 200 | 250, 200, 180–90 | 46,000 | CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal | |
| Pyongyang Semiconductor Factory | 111 Factory | North Korea, Pyongyang | 1980s | 3000[354] | |||||
| DB HiTek | Fab 1 | South Korea, Bucheon[3] | 1997[3] | Foundry | |||||
| DB HiTek | Fab 2 | South Korea, Eumsung-Kun[3] | 2001[3] | Foundry | |||||
| DB HiTek | Fab 2 Module 2 | South Korea, Eumsung-Kun[3] | Foundry | ||||||
| Kodenshi AUK Group[355] | Silicon FAB Line | ||||||||
| Kodenshi AUK Group[355] | Compound FAB Line | ||||||||
| Kyocera | SAW devices[145] | ||||||||
| Seiko Instruments[356] | China, Shanghai | ||||||||
| Seiko Instruments[356] | Japan, Akita | ||||||||
| Seiko Instruments[356] | Japan, Takatsuka | ||||||||
| Epson[357] | T wing | Japan, Sakata | 1997 | 200 | 350-150 | 25,000 | |||
| Epson[357] | S wing | Japan, Sakata | 1991 | 150 | 1200-350 | 20,000 | |||
| Olympus Corporation[358] | Nagano | Japan, Nagano Prefecture | MEMS[359] | ||||||
| Olympus | Japan | MEMS[360] | |||||||
| New Japan Radio | Kawagoe Works | Japan, Saitama Prefecture, Fujimino City[361][362] | 1959[311] | 100, 150 | 4000, 400, 350 | Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD,40V Hi Speed Complementary Bipolar,Analog CMOS+HV, SAW Filters[363] | |||
| New Japan Radio | Saga ElectronicsArchived 2017-09-19 at theWayback Machine[364] | Japan, Saga Prefecture | 100, 150 | 4000, 400, 350[365] | Foundry, Bipolar, Mixed Signal, Analog,Hi Speed BiCMOS, BCD,40V Hi Speed Complementary Bipolar,Analog CMOS+HV, SAW Filters[363] | ||||
| New Japan Radio | NJR FUKUOKAArchived 2017-09-18 at theWayback Machine | Japan, Fukuoka Prefecture, Fukuoka City[364] | 2003[366] | 100, 150 | Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs | ||||
| New Japan Radio | Japan, Nagano, Nagano City[367] | ||||||||
| New Japan Radio | Japan, Nagano, Ueda City[367] | ||||||||
| Nichia | YOKOHAMA TECHNOLOGY CENTER[368] | Japan, Kanagawa | LEDs | ||||||
| Nichia | SUWA TECHNOLOGY CENTER[368] | Japan, Nagano | LEDs | ||||||
| Taiyo Yuden | Japan, Nagano | SAW devices[145] | |||||||
| Taiyo Yuden | Japan, Ome | SAW devices[145] | |||||||
| Silex Microsystems | Sweden, Stockholm County, Järfälla[3] | 0.009, 0.032 | 2003, 2009[3] | ||||||
| Elmos Semiconductor | Germany, North Rhine-Westphalia, Dortmund[369] | 1984 | 200 | 800, 350 | 9000 | HV-CMOS | |||
| United Monolithic Semiconductors[370] | Germany, Baden-Württemberg, Ulm | 100 | 700, 250, 150, 100 | Foundry,FEOL,MMIC,GaAs pHEMT,InGaP,GaN HEMT,MESFET,Schottky diode | |||||
| United Monolithic Semiconductors[370] | France, Île-de-France, Villebon-sur-Yvette | 100 | Foundry, BEOL | ||||||
| Innovative Ion Implant | France, Provence-Alpes-Côte d'Azur, Peynier | 51–300[371] | |||||||
| Innovative Ion Implant | UK, Scotland, Bathgate | 51–300[371] | |||||||
| nanoPHAB | Netherlands, North Brabant, Eindhoven | 50–100 | 50-10 | 2–10 | MEMS | ||||
| Micron Semiconductor Ltd.[372] | Lancing | UK, England, West Sussex, Lancing | Detectors | ||||||
| Pragmatic Semiconductor | FlexLogic 001 | UK, England, Durham | 0.020 | 2018 | 200 | 600 | 4,000 | Flexible Semiconductor / Foundry and IDM | |
| Pragmatic Semiconductor | FlexLogic 002 | UK, England, Durham | 0.050 | 2023 | 300 | 600 | 15,000 | Flexible Semiconductor / Foundry and IDM | |
| Pragmatic Semiconductor | FlexLogic 003 | UK, England, Durham | 0.050 | Planned 2025 on line | 300 | 600 | 15,000 | Flexible Semiconductor / Foundry and IDM | |
| INEX Microtechnology | UK, England, Northumberland, Newcastle upon Tyne | 2014 | 150 | Foundry | |||||
| CSTG | UK, Scotland, Glasgow[3][373] | 2003[3] | 76, 100 | InP, GaAs,AlAs, AlAsSb,GaSb, GaN, InGaN,AlN, diodes, LEDs, lasers, PICs,Optical amplifiers, Foundry | |||||
| Photonix | UK, Scotland, Glasgow[3] | 0.011 | 2000[3] | ||||||
| Integral | Belarus, Minsk | 1963 | 100, 150, 200 | 2000,1500,350 | |||||
| VSP Mikron | WaferFab[374] | Russia, Voronezh Oblast, Voronezh | 1959 | 100, 150 | 900+ | 6,000 | Bipolar, Power Semiconductors | ||
| Semikron | Nbg Fab | Germany, Nuremberg | 1984 | 150 | 3500 | 70,000 | Bipolar, Power Semiconductors | ||
| NM-Tech | Russia, Moscow, Zelenograd | 2016 | 200 | 250-110 | 20,000 | ||||
| Angstrem | Liniya 100 | Russia, Moscow, Zelenograd | 1963 | 100 | 1200 | 500 (6,000 per year)[375] | |||
| Angstrem | Liniya 150 | Russia, Moscow, Zelenograd | 1963 | 150 | 600 | 6,000 (72,000 per year)[375] | |||
| Mikron Group | Mikron | Russia, Moscow, Zelenograd | 0.4[376] | 2012 | 200 150 100 | 250-65 2000-1600 | 3,000 8,000 5,000 | ||
| Crocus Nano Electronics | Russia, Moscow | 0.2 | 2016 | 300 | 90-55 | 4,000[377] | BEOL | ||
| NIIIS | Russia, Nizhny Novgorod Oblast, Nizhny Novgorod | 2010 | 100–150 | 350-150 | MEMS | ||||
| NPP Istok | Russia, Moscow Oblast, Fryazino | 150 | |||||||
| Micran | Russia, Tomsk Oblast, Tomsk | 2015 | 100 | ||||||
| Kremny El | Russia, Bryansk Oblast, Bryansk | 2019 | 500 | ||||||
| Syntez Microelectronics | Russia, Voronezh Oblast, Voronezh | 1992 | 200 | 350-65 | SiC, GaN, TSV | ||||
| NZPP Vostok | Russia, Novosibirsk Oblast, Novosibirsk | 1956 | 100 | 250-180 | |||||
| Russian Space Systems | Russia, Moscow | 76, 100, 150 | 1000 | ||||||
| Ruselectronics | Svetlana-Rost | Russia, Saint Petersburg | 50, 76, 100 | 1000, 800, 500, 200 | |||||
| OKB-Planeta | Svetlana-Rost | Russia, Novgorod Oblast, Veliky Novgorod | 100 | 150 | |||||
| FBK – Fondazione Bruno Kessler | MNF | Italy, Trento | 1990 | 500 | 150 | Research Institute; prototype productions of silicon MEMS, silicon radiation sensors | |||
| CEITEC – Centro Nacional de Tecnologia Electrônica Avançada S.A | Brazil, Porto Alegre | 2008 | 600 | Research Institute; prototype production | |||||
| HT Micron (Hana Micron) | São Leopoldo | Brazil, São Leopoldo | 0.2[378] | 2009 | DRAM, MCP, NAND Flash | ||||
| Honeywell Aerospace Technologies | USA,Redmond, Washington | MEMS | |||||||
| Microchip (formerly Fujitsu Microelectronics)[379][380][381] | Fab 4 | United States,Oregon,Gresham | 0.1835 | 200 | 110 | 30,000 | |||
| Microchip(formerlyAtmel)[382][383][380] | Fab 5 | United States,Colorado,Colorado Springs | 150 | 250 | 40,000 | Domestic rad-hardMOSFET,silicon carbide, cryptography, hi-rel discretes,MEMS, automotive,analog,microcontrollers, and memory | |||
| Microchip (part ofMicrosemi acquisition, formerly New England Semiconductor)[384][385][380] | Lawrence | United States,Massachusetts,Lawrence | 76.2 and 100 | 1,000 | 2,000 |
Number of open fabs currently listed here: 474
(NOTE: Some fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered bad luck; seetetraphobia.)
| Company | Plant Name | Plant Location | Plant Cost (in US$Billions) | Started Production | Wafer Size (mm) | Process TechnologyNode (nm) | Production Capacity (Wafers/Month) | Technology / Products | Ended Production |
|---|---|---|---|---|---|---|---|---|---|
| BelGaN Group (formerlyON Semiconductor) (formerlyAMI Semiconductor) (formerly Alcatel Microelectronics)(formerly Mietec)[386] | Oudenaarde[387] | Belgium, East Flanders, Oudenaarde | 150, 200 | 3000, 2000–350 | GaN, mixed-signal CMOS, BCD foundry | 2024 | |||
| VEF | Soviet Union, Latvia, Riga | 1960 | Semi-secret governmentsemiconductor fab and a major research center separated from the Russian military manufacturing complex by thecollapse of the USSR. | 1999 | |||||
| Tower Semiconductor(formerlyMicron) | Fab 4[388] | Japan, Hyōgo, Nishiwaki | 0.450[3] | 1992[3] | 200 | 95 | 60,000[3] | DRAM, foundry | 2014 |
| Tower Semiconductor – Tacoma | China, Jiangsu, Nanjing[389][390] | halted, bankruptcy in June 2020[391] | 200, 300 (planned) | Foundry | 2020 | ||||
| Fujian Jinhua (JHICC)[20][392][393][394] | F2 | China, Fujian, Jinjiang | 5.65[395] | 2018 (planned) | 300 | 22 | 60,000 | DRAM[19] | 2018 |
| Decoma[20] | F2 | China, Jiangsu, Huai'an | Under construction | 300 | 20,000 | 2020 | |||
| Wuhan Hongxin Semiconductor Manufacturing (HSMC)[396] | China, Hubei, Wuhan | 2019 (halted) | 300 | 14, 7 | 30,000[397] | Foundry | 2020 | ||
| Tsinghua Unigroup –Unigroup Guoxin (Unigroup, Xi'an UniIC Semiconductors Co., Ltd.)[20] | SZ | China, Guangdong, Shenzhen | 12.5 | Planned | 300 | 50,000 | DRAM | 2019 (just plan) | |
| TSMC | Fab 1[222][136] | Taiwan Hsinchu, Baoshan | 1987 | 150 | 2000-800 | 20,000 | Foundry, CMOS, BiCMOS | 2001, March 9 | |
| UMC | Fab 1 | Japan, Chiba, Tateyama | 0.543[3] | 1997[3] | 200 | 40,000 | Foundry | 2012 | |
| SK Hynix | E-4 | United States, Oregon, Eugene | 1.3 | 2007 | 200 | 30,000 | DRAM | 2008[398] | |
| Symetrix –Panasonic[399] | Brazil | 0.9 (planned) | planned | FeRAM | (just plan) | ||||
| Rohm (formerlyData General) | United States, California, Sunnyvale[400] | ||||||||
| Kioxia | Fab 1 (at Yokkaichi Operations)[401] | Japan, Mie, Yokkaichi | 1992 | 200 | 400 | 35,000 | SRAM, DRAM | 2001, September | |
| NEC | Livingston[402][87] | United Kingdom, Scotland, West Lothian, Livingston | 4.5 (total) | 1981 | 150, 200 | 800–350, 250, 180 | 30,000 | CMOS, DRAM, SRAM, MCUs, ASICs, DSPs | 2001, April |
| LFoundry [de] (formerlyRenesas Electronics)[403] | Germany, Bavaria, Landshut | 1992 | 200 | 2011 | |||||
| LFoundry [de](formerlyAtmel)[404] | France, Bouches-du-Rhône, Rousset | ? | 200 | 25.000[405] | |||||
| Atmel (formerlySiemens) | Fab 9[406] | United Kingdom, Tyne and Wear, North Tyneside | 1.53[407] | 1998[408] | DRAM[408] | 2007[409] | |||
| EI Niš | Ei Poluprovodnici | Serbia, Nišava, Niš | 1962 | 100 | 2000 | ||||
| Plessey Semiconductors(formerlyPlus Semi) (formerlyMHS Electronics)(formerlyZarlink)(formerlyMitel) (formerlyPlessey Semiconductors) | [387] | UK, Devon, Plymouth[3] | 100, 150 | 800, 500 | 8,000 | Bipolar, ASICs, linear ICs | |||
| Telefunken Semiconductors [de] | Heilbronn, HNO-Line[387] | Germany, Baden-Württemberg, Heilbronn | 0.125[3] | 1993[3] | 100, 150 | 800 | 10,000 | Bipolar, CMOS, BiCMOS, GaAs, SiGe, ASICs, ASSPs, MCUs, discrete, optoelectronics | 2015 |
| Qimonda | Richmond[410] | United States, Virginia, Richmond | 3 | 2005 | 300 | 65 | 38,000 | DRAM | 2009, January |
| STMicroelectronics (formerlyNortel[311]) | [387] | United States, California, San Diego, Rancho Bernardo | 100, 150 | 800, 500 | NMOS,CMOS, BiCMOS | 2002[411] | |||
| Freescale Semiconductor(formerlyMotorola) | Toulouse Fab[412] | France, Haute-Garonne, Toulouse | 1969 | 150 | 650 | Automotive | 2012[413] | ||
| Freescale Semiconductor(formerlyMotorola) (formerlyTohoku Semiconductor) | Sendai Fab[414] | Japan, Miyagi, Sendai | 1987 | 150, 200 | 500 | DRAM, microcontrollers, analog, sensors | 2009? | ||
| Agere Systems(formerlyLucent)(formerlyAT&T)[415] | Spain, Madrid, Tres Cantos | 0.67[416] | 1987[417] | 500, 350, 300 | CMOS | 2001 | |||
| GMT Microelectronics (formerlyCommodore Semiconductor) (formerlyMOS Technology) | United States, Pennsylvania, Audubon | 1969 1976 1995 | 1000 | 1976 1992[418] 2001 | |||||
| Integrated Device Technology | United States, California, Salinas | 1985 | 150 | 800-350[419] | 2002 | ||||
| ON Semiconductor (formerlyCherry Semiconductor) | [420] | United States, Rhode Island, East Greenwich | 100, 150 | 1400 | 10,000 | Bipolar, BiCMOS, Linear ICs and ASICs | 2004 | ||
| ON Semiconductor (formerlyMotorola) | [420] | United States, Arizona, Phoenix | 150 | 5000-500 | 12,000 | MOS, power discrete | 2011 | ||
| ON Semiconductor(formerlyMotorola) | Aizu Plant[420] | Japan, Aizu | 100, 150 | 1200, 1000 | 40,000 | CMOS, MCUs, logic and smart power ICs | 2012 | ||
| ON Semiconductor(formerly Truesense Imaging,Kodak) | Rochester | United States, New York, Rochester[421] | 150 | CCDs and Image Sensors | 2020 | ||||
| Intel | Fab 8[61] | Israel, Jerusalem District, Jerusalem | 1985 | 150 | Microprocessors,Chipsets,Microcontrollers[62] | 2007 | |||
| Intel | Fab D2 | United States, California, Santa Clara | 1989 | 200 | 130 | 8,000 | Microprocessors, Chipsets,Flash memory | 2009 | |
| Intel | Fab 17[52][51] | United States, Massachusetts, Hudson | 1998 | 200 | 130 | Chipsets and other[51] | 2014 | ||
| Fairchild Semiconductor (formerlyNational Semiconductor) | West Jordan | United States, Utah, West Jordan | 1977 | 150 | 2015[422] | ||||
| Texas Instruments | HFAB | United States, Texas, Houston | 1967 | 150 | 2013[423] | ||||
| Texas Instruments (formerlySilicon Systems) | Santa Cruz | United States, California, Santa Cruz | 0.250 | 1980 | 150 | 800 | 80,000 | HDD | 2001 |
| Texas Instruments (formerlyNational Semiconductor) | Arlington | United States, Texas, Arlington | 1985 | 150 | 80000, 35000 | 2010 | |||
| Unknown (fortune 500 company) | United States, East Coast[424] | 150 | 1,600 | MEMS | 2016 | ||||
| Diodes Incorporated (formerlyLite-On Power Semiconductor)(formerlyAT&T) | KFAB | United States, Missouri, Lee's Summit | 1994[425] | 130 | 2017[426] | ||||
| Qorvo (formerlyTriQuint Semiconductor)(formerlySawtek) | United States, Florida, Apopka[76][427] | SAW filters | 2019 | ||||||
| GlobalFoundries | Abu Dhabi[3] | UAE, Emirate of Abu Dhabi, Abu Dhabi[3] | 6.8[3] (planned) | 2016[3] (planned) | 300 | 180-110 | 45,000 | Foundry | 2011 (plan stopped) |
| GlobalFoundries – Chengdu | China, Sichuan, Chengdu[428] | 10 (planned) | 2018 (planned), 2019 (second phase) | 300 | 180/130 (cancelled),22 (second phase) | 20,000 (85,000 planned) | Foundry, FDSOI (second phase) | 2020 (was idle) | |
| Tondi Elektroonika[429] | A-1381 | Soviet Union, Estonia, Harju, Tallinn | 1958 | Radio equipment, Transisors, Photodiode | 1978 | ||||
| Intersil (formerlyHarris Semiconductor, formerlyGE, formerlyRCA) | [420] | United States, Ohio, Findlay | 1954 | 100, 125 | 2000, 1500, 1200 | 60,000 | CMOS, bipolar, BiCMOS, Semiconductors, Optoelectronics, Integrated Circuits, Research[430] | 2003[431] | |
| Microchip (formerlyGeneral Instrument)[432][433] | Fab 1 | United States,Arizona,Chandler | 125 | 5,000 | |||||
| Microchip (formerlyDigital Equipment Corporation, formerlyGTE Corporation)[434][380][435] | Fab 2 | United States,Arizona,Tempe | 200 | 250 | 20,000 | ||||
| Microchip (formerlyMatsushita Semiconductor Corporation of America)[436][437][438] | Fab 3 | United States,Washington,Puyallup | field-programmablemicrocontrollers, serialEEPROMs, and microperipheral products |
Number of closed fabs currently listed here: 49