Movatterモバイル変換


[0]ホーム

URL:


Jump to content
WikipediaThe Free Encyclopedia
Search

KOMDIV-32

From Wikipedia, the free encyclopedia
KOMDIV-32
General information
Launched1999; 26 years ago (1999)
Designed byNIISI
Common manufacturers
  • NIISI
  • Mikron
  • MVC Nizhny Novgorod
Performance
Max.CPUclock rate33 MHz to 125 MHz
Architecture and classification
Technology node0.25 μm to 0.5 μm
Instruction setMIPS I
Physical specifications
Cores
  • 1

TheKOMDIV-32 (Russian:КОМДИВ-32) is a family of 32-bitmicroprocessors developed and manufactured by theScientific Research Institute of System Development (NIISI) of theRussian Academy of Sciences.[1][2] The manufacturing plant of NIISI is located inDubna on the grounds of theKurchatov Institute.[3] The KOMDIV-32 processors are intended primarily for spacecraft applications and many of them areradiation hardened (rad-hard).

These microprocessors are compatible withMIPS R3000 and have an integrated MIPS R3010 compatiblefloating-point unit.[4]

Overview

[edit]
DesignationProduction start (year)Process (nm)Clock rate (MHz)Remarks
RussianEnglish
1В8121V812?50033[5]
1890ВМ1Т1890VM1T200050050rad-hard[4][6][7][8]
1890ВМ2Т1890VM2T200335090[4][6][7][8][9]
1990ВМ2Т1990VM2T2008 ?35066rad-hard[4][6][7][10]
5890ВМ1Т5890VM1Т200950033rad-hard[4][6][7][8][11]
5890ВЕ1Т5890VE1Т200950033rad-hard[4][6][7][8][11][12]
1900ВМ2Т1900VM2T201235066rad-hard[4][6][7][8][11][12]
1904ВЕ1Т1904VE1T201635040[6][13]
1907ВМ0141907VM0142016250100rad-hard[4][6][8]
1907ВМ0381907VM0382016 ?250125rad-hard[4][6][10][14][15][16]
1907ВМ0441907VM0442016 ?25066rad-hard[4][6][8][14][15][17]
1907ВМ0561907VM0562016 ?250100rad-hard[4][6][8][14][15]
1907ВМ0661907VM0662016 ?250100rad-hard[4][6][8][14][15]
1907ВК0161907VK016?250100rad-hard[4][8][14][15]

Details

[edit]

1V812

[edit]
  • 0.5 μmCMOS process, 3-layer metal
  • 108-pin ceramicQuad Flat Package (QFP)
  • 1.5 million transistors, 8KB L1 instruction cache, 8KB L1 data cache, compatible withIDT 79R3081E

1890VM1T

[edit]
  • 0.5 μmCMOS process

1890VM2T

[edit]
  • 0.35 μm CMOS process

1990VM2T

[edit]

5890VM1Т

[edit]

5890VE1Т

[edit]
  • 0.5 μm SOI CMOS process
  • 240-pin ceramic QFP
  • radiation tolerance to not less than 200 kRad, working temperature from -60 to 125 °C
  • System-on-a-chip (SoC) includingPCI master / slave, 16GPIO, 3UART, 3 32-bittimers
  • cache (8KB each for data and instructions)
  • second-sourced by MVC Nizhny Novgorod under the name1904VE1T (Russian:1904ВЕ1Т) with a clock rate of 40 MHz

1900VM2T

[edit]
  • development nameRezerv-32
  • 0.35 μm SOI CMOS process
  • 108-pin ceramic QFP
  • radiation tolerance to not less than 200 kRad, working temperature from -60 to 125 °C
  • triple modular redundancy on block level with self-healing
  • both registers and cache (4KB each for data and instructions) are implemented as dual interlocked storage cells (DICE)

1907VM014

[edit]
  • 0.25 μm SOI CMOS process; manufacturing to be moved toMikron
  • 256-pin ceramic QFP
  • production planned for 2016 (previously this device was planned to go into production in 2014 under the name 1907VE1T or 1907VM1T)[12]
  • radiation tolerance to not less than 200 kRad
  • SoC includingSpaceWire,GOST R 52070-2003 (Russian version ofMIL-STD-1553),SPI, 32GPIO, 2UART, 3timers,JTAG
  • cache (8KB each for data and instructions)

1907VM038

[edit]

1907VM044

[edit]
  • development nameObrabotka-10
  • 0.25 μm SOI CMOS process; manufactured byMikron
  • 256-pin ceramic QFP
  • SoC includingSpaceWire, GOST R 52070-2003 (MIL-STD-1553),SPI, 32GPIO, 2UART, 3timers,JTAG
  • radiation tolerance to not less than 200 kRad
  • triple modular redundancy in processor core
  • both registers and cache (4KB each for data and instructions) are implemented as dual interlocked storage cells (DICE) with 1 parity bit per byte for cache andHamming code for registers
  • SECDED for external memory
  • working temperature from -60 to 125 °C

1907VM056

[edit]

1907VM066

[edit]

1907VK016

[edit]

See also

[edit]

References

[edit]
  1. ^"Отделение разработки вычислительных систем" [Computer systems development branch] (in Russian). Moscow:NIISI. Retrieved9 September 2016.
  2. ^"First Russian MIPS-Compatible Microprocessor". 22 December 2007. Retrieved6 September 2016.
  3. ^Шунков, Валерий (28 March 2014)."Российская микроэлектроника для космоса: кто и что производит" [Russian microelectronics for space applications: Who manufactures what] (in Russian). Geektimes. Retrieved8 April 2017.
  4. ^abcdefghijklm"Разработка СБИС - Развитие микропроцессоров с архитектурой КОМДИВ" [VLSI development - Development of microprocessors using the KOMDIV architecture] (in Russian). Moscow:NIISI. Retrieved6 September 2016.
  5. ^"ОДНОКРИСТАЛЬНЫЙ МИКРОПРОЦЕССОР С АРХИТЕКТУРОЙ MIPS 1B812" [Single-chip microprocessor with MIPS architecture 1V812] (in Russian). Moscow:NIISI. Archived fromthe original on 21 July 2006. Retrieved7 September 2016.
  6. ^abcdefghijkl"Изделия отечественного производства" [Domestic products] (in Russian). Moscow: AO "ENPO SPELS". Retrieved1 September 2016.
  7. ^abcdef"Микросхемы вычислительных средств, включая микропроцессоры, микроЭВМ, цифровые процессоры обработки сигналов и контроллеры" [Integrated circuits for computing devices, including microprocessors, microcomputers, digital signal processors, and controllers] (in Russian). Promelektronika VPK. Archived fromthe original on 28 March 2017. Retrieved25 October 2017.
  8. ^abcdefghij"Перспективные ЭВМ семейства БАГЕТ" [Future computers in the BAGET family](PDF) (in Russian). Moscow: AO KB "Korund-M". 2017. Retrieved1 April 2021.
  9. ^"1890ВМ2Т" [1890VM2T](PDF) (in Russian). Moscow:NIISI. Retrieved9 September 2016.
  10. ^abКостарев, Иван Николаевич (28 January 2017)."Методика обеспечения сбоеустойчивости ПЛИС для ракетно-космического применения" [Method for ensuring the fail-safe operation of FPGA in rocket and space applications] (in Russian). Moscow: Moscow Institute of Electronics and Mathematics. Archived fromthe original on 28 March 2017. Retrieved11 February 2020.
  11. ^abcOsipenko, Pavel Nikolaevich (12 October 2011)."Аспекты радиационной стойкости интегральных микросхем" [Aspects of the radiation resistance of integrated circuits](PDF) (in Russian). Moscow:NIISI. Archived fromthe original(PDF) on 25 April 2012. Retrieved7 September 2016.
  12. ^abcOsipenko, Pavel Nikolaevich (25 May 2012)."ИЗДЕЛИЯ НАУЧНО-ИССЛЕДОВАТЕЛЬСКОГО ИНСТИТУТА СИСТЕМНЫХ ИССЛЕДОВАНИЙ РАН ДЛЯ АЭРОКОСМИЧЕСКИХ ПРИЛОЖЕНИЙ" [ELECTRONIC COMPONENTS OF SCIENTIFIC RESEARCH INSTITUTE FOR SYSTEM ANALYSIS RAS FOR SPACE APPLICATION](PDF).Scientific experiments on small satellites: apparatus, data collection and control, electronic components (in Russian). Tarusa. pp. 139–148.ISSN 2075-6836. Retrieved7 September 2016.
  13. ^"Микропроцессоры и микроконтроллеры" [Microprocessors and microcontrollers] (in Russian). Nizhny Novgorod: MVC. 2014. Archived fromthe original on 10 March 2017. Retrieved29 March 2018.
  14. ^abcdeSerdin, O.V. (2017)."The special radiation-hardened processors for new highly informative experiments in space".Journal of Physics: Conference Series.798 (1): 012010.Bibcode:2017JPhCS.798a2010S.doi:10.1088/1742-6596/798/1/012010.
  15. ^abcdeSerdin, O.V. (13 October 2016)."The special radiation-hardened processors for new highly informative experiments in space"(PDF). Retrieved5 April 2017.
  16. ^"Микросхема 1907ВМ038" [Integrated circuit 1907VM038](PDF) (in Russian). Moscow:NIISI. Retrieved28 March 2017.
  17. ^"Микросхема 1907ВМ044" [Integrated circuit 1907VM044](PDF) (in Russian). Moscow:NIISI. Retrieved3 April 2017.
Manufacturer
Instruction set
 
MCST
Elbrus,x86
SPARC
ELVEES
MIPS
NIISI
MIPS
NTC Module
DSP
Multiclet
Multicellular
Baikal Electronics
MIPS32
ARM
PDP-11 compatible
Intel 8048 compatible
Intel 8080 compatible
Intel 8086 compatible
Zilog Z80 compatible
Retrieved from "https://en.wikipedia.org/w/index.php?title=KOMDIV-32&oldid=1255109039"
Categories:
Hidden categories:

[8]ページ先頭

©2009-2025 Movatter.jp