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Boron phosphide

From Wikipedia, the free encyclopedia
Boron phosphide
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard100.039.616Edit this at Wikidata
EC Number
  • 243-593-3
  • InChI=1S/BP/c1-2
    Key: FFBGYFUYJVKRNV-UHFFFAOYSA-N
  • [B+3].[P-3]
  • B#P
Properties
BP
Molar mass41.7855 g/mol
Appearancemaroon powder
Density2.90 g/cm3
Melting point1,100 °C (2,010 °F; 1,370 K) (decomposes)
Band gap2.1 eV (indirect, 300 K)[1]
Thermal conductivity4.6 W/(cm·K) (300 K)[2]
3.0 (0.63 μm)[1]
Structure
Zinc blende
F43m
Tetrahedral
Except where otherwise noted, data are given for materials in theirstandard state (at 25 °C [77 °F], 100 kPa).
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Chemical compound

Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound ofboron andphosphorus. It is asemiconductor.[3]

History

[edit]

Crystals of boron phosphide were synthesized byHenri Moissan as early as 1891.[4]

Appearance

[edit]

Pure BP is almost transparent, n-type crystals are orange-red whereas p-type ones are dark red.[5]

Chemical properties

[edit]

BP is not attacked by acids or boiling aqueous alkali water solutions. It is only attacked by molten alkalis.[5]

Physical properties

[edit]

BP is known to be chemically inert and exhibit very high thermal conductivity.[2] Some properties of BP are listed below:

  • lattice constant 0.45383 nm
  • coefficient of thermal expansion 3.65×10−6 /°C (400 K)
  • heat capacity CP ~ 0.8 J/(g·K) (300 K)
  • Debye temperature = 985 K
  • Bulk modulus 152 GPa
  • relatively high microhardness of 32 GPa (100 g load).
  • electron and hole mobilities of a few hundred cm2/(V·s) (up to 500 for holes at 300 K)
  • high thermal conductivity of ~ 460 W/(m·K) at room temperature[2]

See also

[edit]

References

[edit]
  1. ^abMadelung, O. (2004).Semiconductors: Data Handbook. Birkhäuser. pp. 84–86.ISBN 978-3-540-40488-0.
  2. ^abcKang, J.; Wu, H.; Hu, Y. (2017). "Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications".Nano Letters.17 (12):7507–7514.Bibcode:2017NanoL..17.7507K.doi:10.1021/acs.nanolett.7b03437.PMID 29115845.
  3. ^Popper, P.; Ingles, T. A. (1957)."Boron Phosphide, a III–V Compound of Zinc-Blende Structure".Nature.179 (4569): 1075.Bibcode:1957Natur.179.1075P.doi:10.1038/1791075a0.
  4. ^Moissan, H. (1891)."Préparation et Propriétés des Phosphures de Bore".Comptes Rendus.113:726–729.
  5. ^abBerger, L. I. (1996).Semiconductor Materials. CRC Press. p. 116.ISBN 978-0-8493-8912-2.

Further reading

[edit]
  • King, R. B., ed. (1999).Boron Chemistry at the Millennium. Elsevier Science & Technology.ISBN 0-444-72006-5.
  • US patent 6831304, Takashi, U., "P-N Junction Type Boron Phosphide-Based Semiconductor Light-Emitting Device and Production Method thereof", issued 2004-12-14, assigned to Showa Denko 
  • Stone, B.; Hill, D. (1960). "Semiconducting Properties of Cubic Boron Phosphide".Physical Review Letters.4 (6):282–284.Bibcode:1960PhRvL...4..282S.doi:10.1103/PhysRevLett.4.282.
Boron pnictogenides
Boron halides
Acids
Boranes
Boron oxides and sulfides
Carbides
Organoboron compounds
Phosphides
Other compounds
Binary phosphides
Ternary phosphides
Quaternary phosphides
Quinary phosphides
See also
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