Arsenidogermanate

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Arsenidogermanates are chemical compounds that containanions witharsenic bonded togermanium. They are in the category of tetrelarsenides, pnictidogermanates, or tetrelpnictides.

Germanium forms two arsenides: GeAs and GeAs₂.^[1]

List

[edit]

formula	formula weight	crystal system	space group	unit cell	volume	density	comments	ref
LiGe₃As₃		orthorhombic	Pbam	a=10.0862 b=15.7612 c=3.7403 Z=4	594.60	5.01		^[2]
Li₅GeAs₃							black	^[3]
NaGe₆As₆	908.05	monoclinic	C2/m	a = 22.063,b = 3.8032,c = 7.2020,β = 92.744°,Z = 2	603.64	5.00	needles	^[4]
Na₁₀Ge₂As₆		monoclinic	P12₁/n1	a=13.531 b=7.544 c=8.298β = 90.2° Z=2	847.0			^[5]
K₂GeAs₂		orthorhombic	Ibam	a = 13.292,b = 7.028,c = 6.548Z = 4			moisture sensitive needles	^[6]
KGe₃As₃	481.53	orthorhombic	Pnma	a=9.993,b=3.7664,c=18.607 Z=4	700.34	4.568		^[7]
K₂Ge₃As₃	520.73	orthorhombic	Pnnm	a=14.1466 b=16.300 c=3.7489 Z=4	864.47	4.001	fibrous metallic	^[8]
K₂NaGaAs₂			Ibam	a=6.733 b=14.809 c=6.574 Z=4	655.5	3.250		^[9]
KCdGeAs₂		triclinic	P1	a = 8.004,b = 8.402,c = 8.703, α = 71.019°, β = 75.257°, γ = 73.746°, Z=4			band gap 0.8 eV; Ge₂As₆ units	^[10]
RbCdGeAs₂		triclinic	P1	a = 8.269,b = 8.452,c = 8.735, α = 71.163°, β = 75.601°, γ = 73.673°, Z=4			Ge₂As₆ units	^[10]
Sr₃Ge₂As₄							red metallic; 1D As₃GeGeAs₃ units	^[11]
K₅In₅Ge₅As₁₄		monoclinic	C2/m	a=40.00,b=3.925,c=10.299,β=99.97°, Z=8	1592	4.55	air sensitive; layered	^[12]
K₈In₈Ge₅As₁₇		monoclinic	P2₁/c	a=18.394,b=19.087,c=25.360,β=105.71°, Z=4	8571	4.45	air sensitive; layered	^[12]
RbGe₃As₃	528	orthorhombic	Pnma	a=10.166 b=3.7595 c=19.028 Z=4	727.2	4.823		^[7]
Rb(Ge_1.5In_0.5)As₂(As_1.5Ge_0.5)		orthorhombic	Cmc2₁	a = 3.799,b = 16.50,c = 12.24, Z = 4	767	4.589		^[13]
Rb_XGe_2−XIn_XAs₄								^[13]
I₈As₂₁Ge₂₅	4403	cubic	Pm3n	a=10.5963 Z=1	1189.8	6.1431	colourless	^[14]
Cs₅GeAs₃							metallic; unstable in air; GeAs₃ units	^[15]
BaGe₂As₂		tetragonal	P4₂mc	a=7,786 c=8.664 Z=4	525.2	5.47	metallic	^[16]
Ba₄GeAs₄							dark metallic; GeAs₄ units	^[17]
Re₃Ge_0.6As_6.4								^[18]
Re₃GeAs₆	1080.75	cubic	Im3m	a = 8.73202 Z=4	665.75	10.78	n-type semiconductor	^[18]
AuGeAs		monoclinic	Cc	a 7.2729, b 6.2953, c 6.3067, β 119.209°				^[19]
K_XGe_2−XTl_XAs₄								^[13]

References

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^Stöhr, Herbert; Klemm, Wilhelm (1940-07-09)."Über Zweistoffsysteme mit Germanium. II. Germanium/Arsen, Germanium/Antimon, Germanium/Wismut".Zeitschrift für anorganische und allgemeine Chemie.244 (2):205–223.doi:10.1002/zaac.19402440211.
^Mark, Justin; Hanrahan, Michael P.; Woo, Katherine E.; Lee, Shannon; Rossini, Aaron J.; Kovnir, Kirill (2 May 2019)."Chemical and Electrochemical Lithiation of van der Waals Tetrel‐Arsenides".Chemistry – A European Journal.25 (25):6392–6401.doi:10.1002/chem.201900339.OSTI 1526289.PMID 30887569.S2CID 83463348.
^Juza, Robert; Schulz, Werner (February 1954)."Ternäre Phosphide und Arsenide des Lithiums mit Elementen der 3. und 4. Gruppe".Zeitschrift für anorganische und allgemeine Chemie (in German).275 (1–3):65–78.doi:10.1002/zaac.19542750107.ISSN 0044-2313.
^Khatun, Mansura; Mar, Arthur (2016-05-01)."NaGe₆As₆: Insertion of sodium into the layered semiconductor germanium arsenide GeAs".Zeitschrift für Naturforschung B.71 (5):375–380.doi:10.1515/znb-2015-0203.ISSN 1865-7117.S2CID 197298002.
^Eisenmann, B.; Klein, J.; Somer, M. (1991-02-01). Eisenmann, B.; Klein, J.; Somer, M. (eds.)."Crystal structure of decasodium di-μ-arsenido-bis(diarsenidogermanate), Na₁₀Ge₂As₆".Zeitschrift für Kristallographie - Crystalline Materials.197 (3–4):265–266.Bibcode:1991ZK....197..265E.doi:10.1524/zkri.1991.197.3-4.265.ISSN 2194-4946.
^Eisenmann, Brigitte; Klein, Jürgen (September 1991)."SiS₂-isostrukturelle Anionen [SiP₂²⁻], [GeAs₂²⁻] und [SnAs₂²⁻] in Alkaliverbindungen".Journal of the Less Common Metals (in German).175 (1):109–117.doi:10.1016/0022-5088(91)90355-8.
^^a ^bKhatun, Mansura; Stoyko, Stanislav S.; Mar, Arthur (June 2016). "Ternary arsenides ATt₃As₃ (A=K, Rb; Tt=Ge, Sn) with layered structures".Journal of Solid State Chemistry.238:229–235.Bibcode:2016JSSCh.238..229K.doi:10.1016/j.jssc.2016.03.035.
^Eulenstein, Armin R.; Bogdanovski, Dimitri; Reinhardt, Hendrik; Miß, Vanessa; Roling, Bernhard; Hampp, Norbert; Dronskowski, Richard; Dehnen, Stefanie (12 November 2019). "K₂Ge₃As₃: Fiberlike Crystals of a Narrow-Band-GapZintl Phase with a One-Dimensional Substructure_∞¹{(Ge₃As₃)^2–}".Chemistry of Materials.31 (21):8839–8849.doi:10.1021/acs.chemmater.9b02827.S2CID 204116281.
^Somer, Mehmet; Peters, Karl; von Schnering, Hans Georg (July 1992)."K₂NaGaP₂, Cs₂NaGaP₂, K₂NaGaAs₂, K₂NaInP₂ und K₂NaInAs₂, Verbindungen mit den SiS₂-isosteren Polyanionen^∞
₁[MX_4/2]³⁻ (M=Ga, In; X=P, As)".Zeitschrift für anorganische und allgemeine Chemie (in German).613 (7):19–25.doi:10.1002/zaac.19926130103.ISSN 0044-2313.
^^a ^bKhatun, Mansura; Stoyko, Stanislav S.; Mar, Arthur (21 July 2014). "Quaternary ArsenidesACdGeAs₂ (A = K, Rb) Built of Ethane-Like Ge₂As₆ Units".Inorganic Chemistry.53 (14):7756–7762.doi:10.1021/ic5011264.PMID 24983676.
^Eisenmann, Brigitte; Schäfer, Herbert (June 1980). "Zintl Phases with Complex Anions: Sr₃Si₂As₄ and Sr₃Ge₂As₄".Angewandte Chemie International Edition in English.19 (6):490–491.doi:10.1002/anie.198004901.
^^a ^bShreeve-Keyer, Julie L; Haushalter, Robert C; Lee, Young-Sook; Li, Sichu; O'Connor, Charles J; Seo, Dong-Kyun; Whangbo, Myung-Hwan (May 1997). "New Layered Materials in the K–In–Ge–As System: K₈In₈Ge₅As₁₇ and K₅In₅Ge₅As₁₄".Journal of Solid State Chemistry.130 (2):234–249.Bibcode:1997JSSCh.130..234S.doi:10.1006/jssc.1996.7210.
^^a ^b ^cShreeve-Keyer, Julie L.; Haushalter, Robert C. (1996), Kajimura, Koji; Kuroda, Shin-ichi (eds.),"Synthesis and Structural Characterization of a Quaternary Zintl Phase Material from the Rb:Ge:In:As System: Rb(Ge1.5ln0.5)As2(As1.5Ge0.5)",Materials and Measurements in Molecular Electronics, Springer Proceedings in Physics, vol. 81, Tokyo: Springer Japan, pp. 139–150,doi:10.1007/978-4-431-68470-1_11,ISBN 978-4-431-68472-5, retrieved2021-12-08
^Ayouz, Katia; Kars, Mohammed; Rebbah, Allaoua; Rebbah, Houria (15 March 2009)."I₈As₂₁Ge₂₅".Acta Crystallographica Section E.65 (3): i15.doi:10.1107/S1600536809004991.PMC 2968696.PMID 21582033.
^Eisenmann, Brigitte; Klein, Jürgen; Somer, Mehmet (January 1990). "Anions Isosteric with CO₃²⁻ in Cs₅SiP₃, Cs₅SiAs₃, Cs₅GeP₃, and Cs₅GeAs₃".Angewandte Chemie International Edition in English.29 (1):87–88.doi:10.1002/anie.199000871.
^Eisenmann, Brigitte; Schäfer, Herbert (1981-04-01)."Zintlphasen mit binären Anionen: Zur Kenntnis von BaGe₂P₂ und BaGe₂As₂ / Zintl Phases with Binary Anions: BaGe₂P₂ and BaGe₂As₂".Zeitschrift für Naturforschung B.36 (4):415–419.doi:10.1515/znb-1981-0403.ISSN 1865-7117.S2CID 95993285.
^Eisenmann, Brigitte; Jordan, Hanna; Schäfer, Herbert (February 1981). "Ba₄SiAs₄, and Ba₄GeAs₄, Zintl Phases with Isolated SiAs₄⁸⁻ and GeAs₄⁸⁻ anions".Angewandte Chemie International Edition in English.20 (2):197–198.doi:10.1002/anie.198101972.
^^a ^bSoheilnia, Navid; Xu, Hong; Zhang, Huqin; Tritt, Terry M.; Swainson, Ian; Kleinke, Holger (1 August 2007). "Thermoelectric Properties of Re₃Ge_0.6As_6.4 and Re₃GeAs₆ in Comparison to Mo₃Sb_5.4Te_1.6".Chemistry of Materials.19 (16):4063–4068.doi:10.1021/cm0708517.
^Lee, Shannon J.; Won, Juyeon; Wang, Lin‐Lin; Jing, Dapeng; Harmer, Colin P.; Mark, Justin; Akopov, Georgiy; Kovnir, Kirill (6 May 2021)."New Noncentrosymmetric Tetrel Pnictides Composed of Square‐Planar Gold(I) with Peculiar Bonding".Chemistry – A European Journal.27 (26):7383–7390.doi:10.1002/chem.202005312.PMC 8251799.PMID 33523500.

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