Semiconductor device fabrication
MOSFET scaling (process nodes)
020 μm – 1968 010 μm – 1971 006 μm – 1974 003 μm – 1977  1.5 μm – 1981 001 μm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2025 001 nm ~ 2027
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
v t e

The350 nanometer process (350 nm process) is a level of semiconductor process technology that was reached in the 1995–1996 timeframe by leading semiconductor companies likeIntel andIBM.

• SGS-Thomson 5LM^[1]

• MTI VR4300i (1995), used in theNintendo 64 game console.
• Intel Pentium (P54CS, 1995),Pentium Pro (1995) and initialPentium IICPUs (Klamath, 1997).
• AMD K5 (1996) and originalAMD K6 (Model 6, 1997) CPUs.
• МЦСТ-R150 (2001).
• Parallax Propeller (2006), 8 core microcontroller.^[2]
• AtmelATmega328, used in theArduino UNO.^[3][4]
• NvidiaRIVA 128 (1997)GPU

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