 | |
| Names | |
|---|---|
| Other names indium trioxide, indium sesquioxide | |
| Identifiers | |
3D model (JSmol) | |
| ChemSpider |
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| ECHA InfoCard | 100.013.813 |
| EC Number |
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| UNII | |
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| Properties | |
| In2O3 | |
| Molar mass | 277.64 g/mol |
| Appearance | yellowish green odorless crystals |
| Density | 7.179 g/cm3 |
| Melting point | 1,910 °C (3,470 °F; 2,180 K) |
| insoluble | |
| Band gap | ~3 eV (300 K) |
| −56.0·10−6 cm3/mol | |
| Structure | |
| Cubic, (Bixbyite)cI80 | |
| Ia3, No. 206 | |
a = 1.0117(1) nm[1] | |
Formula units (Z) | 16 formula per cell |
| Hazards | |
| GHS labelling:[2] | |
  | |
| Danger | |
| H315,H319,H335 | |
| P260,P264,P270,P271,P280,P302+P352,P304+P340,P305+P351+P338,P312,P314,P321,P332+P313,P337+P313,P362,P403+P233,P405,P501 | |
| NFPA 704 (fire diamond) | |
Except where otherwise noted, data are given for materials in theirstandard state (at 25 °C [77 °F], 100 kPa). | |
Indium(III) oxide (In2O3) is achemical compound, anamphotericoxide ofindium.
Amorphous indium oxide is insoluble in water but soluble in acids, whereas crystalline indium oxide is insoluble in both water and acids. The crystalline form exists in two phases, the cubic (bixbyite type)[1] and rhombohedral (corundum type). Both phases have aband gap of about 3 eV.[3][4] The parameters of the cubic phase are listed in the infobox.
The rhombohedral phase is produced at high temperatures and pressures or when using non-equilibrium growth methods.[5] It has aspace group R3c No. 167,Pearson symbol hR30, a = 0.5487 nm, b = 0.5487 nm, c = 1.4510 nm, Z = 6 and calculated density 7.31 g/cm3.[6]
Thin films ofchromium-doped indium oxide (In2−xCrxO3) are amagnetic semiconductor displaying high-temperatureferromagnetism, single-phase crystal structure, andsemiconductor behavior with high concentration ofcharge carriers. It has possible applications inspintronics as a material for spin injectors.[7]
Thin polycrystalline films of indium oxide doped with Zn2+ are highly conductive (conductivity ~105 S/m) and evensuperconductive atliquid helium temperatures. The superconductingtransition temperature Tc depends on the doping and film structure and is below 3.3 K.[8]
Bulk samples can be prepared by heatingindium(III) hydroxide or the nitrate, carbonate or sulfate.[9] Thin films of indium oxide can be prepared bysputtering of indium targets in anargon/oxygen atmosphere. They can be used asdiffusion barriers ("barrier metals") insemiconductors, e.g. to inhibitdiffusion betweenaluminium andsilicon.[10]
Monocrystallinenanowires can be synthesized from indium oxide by laser ablation, allowing precise diameter control down to 10 nm.Field effect transistors were fabricated from those.[11] Indium oxide nanowires can serve as sensitive and specificredoxproteinsensors.[12] Thesol–gel method is another way to prepare nanowires.[citation needed]
Indium oxide can serve as asemiconductor material, formingheterojunctions withp-InP,n-GaAs, n-Si, and other materials. A layer of indium oxide on a silicon substrate can be deposited from anindium trichloride solution, a method useful for manufacture ofsolar cells.[13]
When heated to 700 °C, indium(III) oxide forms In2O, (called indium(I) oxide or indium suboxide), at 2000 °C it decomposes.[9]It is soluble in acids but not in alkali.[9]With ammonia at high temperatureindium nitride is formed:[14]
WithK2O and indium metal the compound K5InO4 containingtetrahedral InO45− ions was prepared.[15]Reacting with a range of metal trioxides producesperovskites[16] for example:
Indium oxide is used in some types of batteries,thin filminfrared reflectors transparent for visible light (hot mirrors), someoptical coatings, and someantistatic coatings. In combination withtin dioxide, indium oxide formsindium tin oxide (also called tin doped indium oxide or ITO), a material used for transparent conductive coatings.
In semiconductors, indium oxide can be used as ann-type semiconductor used as aresistive element inintegrated circuits.[17]
Inhistology, indium oxide is used as a part of somestain formulations.
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